| Standard
Code |
Standard English Title |
Standard Class |
Order |
|
SJ 20203-1992 |
Detail specification capacitors, chip, multiple layer, fixed, unencapsulated, ceramic dielectric, established reliability, type CTK4101 |
China Electronics - SJ Standards |
 |
|
SJ 20198-1992 |
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK406 |
China Electronics - SJ Standards |
|
|
SJ 20197-1992 |
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK405 |
China Electronics - SJ Standards |
|
|
SJ 20196-1992 |
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK404 |
China Electronics - SJ Standards |
|
|
SJ 20195-1992 |
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK403 |
China Electronics - SJ Standards |
|
|
SJ 20194-1992 |
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK402 |
China Electronics - SJ Standards |
|
|
SJ 20193-1992 |
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK401 |
China Electronics - SJ Standards |
|
|
SJ 20192-1992 |
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK104 |
China Electronics - SJ Standards |
|
|
SJ 20191-1992 |
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK103 |
China Electronics - SJ Standards |
|
|
SJ 20190-1992 |
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK102 |
China Electronics - SJ Standards |
|
|
SJ 20189-1992 |
Detail specification capacitors, fixed, ceramic dielectric, established reliability, type CCK101 |
China Electronics - SJ Standards |
|
|
SJ 20188-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550 through 2CZ5554 |
China Electronics - SJ Standards |
|
|
SJ 20187-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550~5554 |
China Electronics - SJ Standards |
|
|
SJ 20186-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CW2970~3015 |
China Electronics - SJ Standards |
|
|
SJ 20296-1993 |
Detail specification for type JF2500 and JF2520 high slew rate operational amplifiers of semiconductor integrated circuits |
China Electronics - SJ Standards |
|
|
SJ 20185-1992 |
Semiconductor discrete device Detail specification for siscon voltage reference diodes for type 2DW232~236 |
China Electronics - SJ Standards |
|
|
SJ 20184-1992 |
Semiconductor discrete device Detail specification for field-effect transistor of types CS3821, 3822, 3823 |
China Electronics - SJ Standards |
|
|
SJ 20183-1992 |
Semiconductor discrete device Detail specification for type 3DD6 power transistor |
China Electronics - SJ Standards |
|
|
SJ 20182-1992 |
Semiconductor discrete device Detail specification for reverse-blocking thyristor for type 3CT682, 683, 685~692 and 3CT 5206 |
China Electronics - SJ Standards |
|
|
SJ 20181-1992 |
Semiconductor discrete device Detail specification for reverse-blocking thyristor for type 3CT107 |
China Electronics - SJ Standards |
|
|
SJ 20180-1992 |
Semiconductor discrete device Detail specification for reverse-blocking history type 3CT105 |
China Electronics - SJ Standards |
|
|
SJ 20179-1992 |
Semiconductor discrete device Detail specification for reveres-blocking history type 3CT103 |
China Electronics - SJ Standards |
|
|
SJ 20178-1992 |
Semiconductor discrete device Detail specification for type 3CK38 power swithing transistor |
China Electronics - SJ Standards |
|
|
SJ 20177-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637 |
China Electronics - SJ Standards |
|
|
SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 |
China Electronics - SJ Standards |
|
|
SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 |
China Electronics - SJ Standards |
|
|
SJ 20174-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A |
China Electronics - SJ Standards |
|
|
SJ 20173-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A |
China Electronics - SJ Standards |
|
|
SJ 20172-1992 |
Semiconductor discrete device Detail specification for type 3DK38 power swithing transistor |
China Electronics - SJ Standards |
|
|
SJ 20171-1992 |
Semiconductor discrete device Detail specification for type 3DK51 power switching transistor |
China Electronics - SJ Standards |
|
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