Cart:
| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GB/T 43967-2024 |
Space environment - single particle effect pulse laser test method for Semiconductor devices for aerospace use {译} 空间环境-宇航用半导体器件单粒子效应脉冲激光试验方法 |
China National Standards Semiconductor devices |
 English PDF |
| GB/T 43777-2024 |
Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors {译} 化妆品中功效组分虾青素的测定-高效液相色谱法 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 15651.5-2024 |
Semiconductor devices - Part 5-5: Optoelectronic devices - Optocouplers {译} 半导体器件-第5-5部分：光电子器件-光电耦合器 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.35-2024 |
Semiconductor devices - Mechanical and climatic test methods - Part 35: Acoustic microscopy of plastic encapsulated electronic components {译} 半导体器件-机械和气候试验方法-第35部分：塑封电子元器件的声学显微镜检查 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.34-2024 |
Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling {译} 半导体器件-机械和气候试验方法-第34部分：功率循环 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 43493.3-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 43493.2-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 2: Optical detection methods for defects {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分：缺陷的光学检测方法 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 43493.1-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 1: Defect classification {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分：缺陷分类 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 43366-2023 |
General specification for semiconductor discrete devices for aerospace applications {译} 宇航用半导体分立器件通用规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.26-2023 |
Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) susceptibility testing Human Body Model (HBM) {译} 半导体器件 机械和气候试验方法 第26部分：静电放电（ESD）敏感度测试 人体模型（HBM） |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4587-2023 |
Semiconductor devices Discrete Devices Part 7: Bipolar Transistors {译} 半导体器件 分立器件 第7部分：双极型晶体管 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 43035-2023 |
Semiconductor devices Integrated Circuits Part 20: General Specifications for Film Integrated Circuits and Hybrid Film Integrated Circuits Part 1: Internal Visual Inspection Requirements {译} 半导体器件 集成电路 第20部分：膜集成电路和混合膜集成电路总规范 第一篇：内部目检要求 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 20870.5-2023 |
Semiconductor devices Part 16-5: Microwave integrated circuits Oscillators {译} 半导体器件 第16-5部分：微波集成电路 振荡器 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 20870.2-2023 |
Semiconductor devices Part 16-2: Microwave integrated circuits Prescalers {译} 半导体器件 第16-2部分：微波集成电路 预分频器 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 20870.10-2023 |
Semiconductor devices Part 16-10: Monolithic Microwave Integrated Circuit Technology Acceptable Procedures {译} 半导体器件 第16-10部分：单片微波集成电路技术可接收程序 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 15651.6-2023 |
Semiconductor devices Part 5-6: Optoelectronic devices Light emitting diodes {译} 半导体器件 第5-6部分：光电子器件 发光二极管 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 42709.19-2023 |
Semiconductor devices Microelectronic mechanical devices Part 19: Electronic compass {译} 半导体器件 微电子机械器件 第19部分：电子罗盘 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.23-2023 |
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life {译} 半导体器件 机械和气候试验方法 第23部分：高温工作寿命 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.27-2023 |
Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) susceptibility test - Machine model (MM) {译} 半导体器件 机械和气候试验方法 第27部分：静电放电（ESD）敏感度测试 机器模型（MM） |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.32-2023 |
Semiconductor devices - Methods of mechanical and climatic tests - Part 32: Flammability of plastic encapsulated devices (externally induced) {译} 半导体器件 机械和气候试验方法 第32部分：塑封器件的易燃性（外部引起的） |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.31-2023 |
Semiconductor devices - Methods of mechanical and climatic tests - Part 31: Flammability of plastic encapsulated devices (internal origin) {译} 半导体器件 机械和气候试验方法 第31部分：塑封器件的易燃性（内部引起的） |
China National Standards Semiconductor devices |
English PDF |
| GB/T 42706.5-2023 |
Electronic components - Long term storage of Semiconductor devices - Part 5: Chips and wafers {译} 电子元器件 半导体器件长期贮存 第5部分：芯片和晶圆 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 42706.2-2023 |
Electronic components - Long-term storage of Semiconductor devices - Part 2: Degradation mechanisms {译} 电子元器件 半导体器件长期贮存 第2部分：退化机理 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 42706.1-2023 |
Electronic components - Long term storage of Semiconductor devices - Part 1: General {译} 电子元器件 半导体器件长期贮存 第1部分：总则 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 15879.604-2023 |
Mechanical standardization of Semiconductor devices - Part 6-4: General rules for drawing outline drawings of surface mount semiconductor device packages - Dimensional measurement methods for ball array (BGA) packages {译} 半导体器件的机械标准化 第6-4部分：表面安装半导体器件封装外形图绘制的一般规则 焊球阵列（BGA）封装的尺寸测量方法 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.42-2023 |
Semiconductor devices - Mechanical and climatic test methods - Part 42: Temperature and humidity storage {译} 半导体器件 机械和气候试验方法 第42部分：温湿度贮存 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 42709.7-2023 |
Semiconductor devices Microelectromechanical devices Part 7: MEMS bulk acoustic wave filters and duplexers for radio frequency control and selection {译} 半导体器件 微电子机械器件 第7部分：用于射频控制和选择的MEMS体声波滤波器和双工器 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 42709.5-2023 |
Semiconductor devices Microelectromechanical devices Part 5: RF MEMS switches {译} 半导体器件 微电子机械器件 第5部分：射频MEMS开关 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 8446.3-2022 |
Heat sinks for power Semiconductor devices—Part 3: Insulators and fasteners 电力半导体器件用散热器 第3部分：绝缘件和紧固件 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 8446.2-2022 |
Heat sinks for power Semiconductor devices—Part 2: Measurement methods of thermal resistance and inlet-outlet fluid pressure drop 电力半导体器件用散热器 第2部分：热阻和流阻测量方法 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 8446.1-2022 |
Heat sinks for power Semiconductor devices—Part 1: Radiators 电力半导体器件用散热器 第1部分：散热体 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 41852-2022 |
Semiconductor devices; microelectromechanical devices; bending and shearing test methods for bonding strength of MEMS structures {译} 半导体器件 微机电器件 MEMS结构黏结强度的弯曲和剪切试验方法 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 41853-2022 |
Semiconductor devices MEMS devices Wafer-to-wafer bond strength measurement {译} 半导体器件 微机电器件 晶圆间键合强度测量 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 15879.4-2019 |
Mechanical standardization of Semiconductor devices—Part 4: Coding system and classification into forms of package outlines for semiconductor device packages 半导体器件的机械标准化 第4部分：半导体器件封装外形的分类和编码体系 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 11498-2018 |
Semiconductor devices—Integrated circuits—Part 21：Sectional specification for film integrated circuits and hybrid film integrated circuits on the basis of the qualification approval procedures 半导体器件-集成电路-第21部分：膜集成电路和混合膜集成电路分规范(采用鉴定批准程序)半导体器件-集成电路-第21部分：膜集成电路和混合膜集成电路分规范(采用鉴定批准程序) |
China National Standards Semiconductor devices |
English PDF |
| GB/T 13062-2018 |
Semiconductor devices—Integrated circuits—Part 21-1:Blank detail specification for film integrated circuits and hybrid film integrated circuits on the basis of the qualification approval procedures 半导体器件-集成电路-第21-1部分：膜集成电路和混合膜集成电路空白详细规范(采用鉴定批准程序) |
China National Standards Semiconductor devices |
English PDF |
| GB/T 36360-2018 |
Semiconductor optoelectronic devices--Blank detail specification for middle power light-emitting diodes 半导体光电子器件 中功率发光二极管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 36358-2018 |
Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes 半导体光电子器件 功率发光二极管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 36359-2018 |
Semiconductor optoelectronic devices—Blank detail specification for lower power light-emitting diodes 半导体光电子器件 小功率发光二极管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 15879.5-2018 |
Mechanical standardization of Semiconductor devices—Part 5: Recommendations applying to tape automated bonding(TAB) of integrated circuits 半导体器件的机械标准化 第5部分：用于集成电路载带自动焊(TAB)的推荐值 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.22-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 22: Bond strength 半导体器件 机械和气候试验方法 第22部分：键合强度 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.21-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 21: Solderability 半导体器件 机械和气候试验方法 第21部分：可焊性 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.14-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 14: Robustness of terminations（lead integrity） 半导体器件 机械和气候试验方法 第14部分：引出端强度（引线牢固性） |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.201-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 20-1: Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat 半导体器件 机械和气候试验方法 第20-1部分：对潮湿和焊接热综合影响敏感的表面安装器件的操作、包装、标志和运输 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.13-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 13: Salt atmosphere 半导体器件 机械和气候试验方法 第13部分：盐雾 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.20-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat 半导体器件 机械和气候试验方法 第20部分：塑封表面安装器件耐潮湿和焊接热综合影响 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.15-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 15: Resistance to soldering temperature for through-hole mounted devices 半导体器件 机械和气候试验方法 第15部分：通孔安装器件的耐焊接热 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.12-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 12: Vibration, variable frequency 半导体器件 机械和气候试验方法 第12部分：扫频振动 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.18-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 18: Ionizing radiation (total dose) 半导体器件 机械和气候试验方法 第18部分：电离辐照(总剂量) |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.19-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 19: Die shear strength 半导体器件 机械和气候试验方法 第19部分：芯片剪切强度 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.30-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing 半导体器件 机械和气候试验方法 第30部分：非密封表面安装器件在可靠性试验前的预处理 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.17-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 17: Neutron irradiation 半导体器件 机械和气候试验方法 第17部分：中子辐照 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.11-2018 |
Semiconductor devices—Mechanical and climatic test methods—Part 11: Rapid change of temperature—Two-fluid-bath method 半导体器件 机械和气候试验方法 第11部分：快速温度变化 双液槽法 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 15651.4-2017 |
Semiconductor devices—Discrete devices—Part 5-4:Optoelectronic devices—Semiconductor lasers 半导体器件 分立器件 第5-4部分:光电子器件 半导体激光器 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 249-2017 |
The rule of type designation for discrete Semiconductor devices 半导体分立器件型号命名方法 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 32817-2016 |
Semiconductor devices—Micro-electromechanical devices—Generic specification for MEMS 半导体器件 微机电器件 MEMS总规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 13539.4-2016 |
Low-voltage fuses—Part 4: Supplementary requirements for fuse-links for the protection of Semiconductor devices 低压熔断器 第4部分：半导体设备保护用熔断体的补充要求 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4023-2015 |
Semiconductor devices—Discrete devices and integrated circuits— Part 2: Rectifier diodes 半导体器件 分立器件和集成电路 第2部分：整流二极管 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 15291-2015 |
Semiconductor devices—Part 6: Thyristors 半导体器件 第6部分：晶闸管 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 29332-2012 |
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT) 半导体器件 分立器件 第9部分：绝缘栅双极晶体管(IGBT) |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.4-2012 |
Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) 半导体器件 机械和气候试验方法 第4部分：强加速稳态湿热试验（HAST） |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.3-2012 |
Semiconductor devices - Mechanical and climatic tests methods - Part 3: External visual examination 半导体器件 机械和气候试验方法 第3部分：外部目检 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 13539.4-2009 |
Low-voltage fuses - Part 4: Supplementary requirements for fuse-links for the protection of Semiconductor devices 低压熔断器 第4部分：半导体设备保护用熔断体的补充要求 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 21039.1-2007 |
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification 半导体器件 分立器件 第4-1部分：微波二极管和晶体管 微波场效应晶体管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 20870.1-2007 |
Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers 半导体器件 第16-1部分：微波集成电路 放大器 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 17574.9-2006 |
Semiconductor devices - Integrated circuits - Part 2-9: Digital integrated circuits - Blank detail specification for MOS ultraviolet light erasable electrically programmable read-only memories 半导体器件 集成电路 第2-9部分：数字集成电路 紫外光擦除电可编程MOS只读存储器空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 17574.20-2006 |
Semiconductor devices - Integrated circuits - Part 2-20：Digital integrated circuits - Family specification - Low voltage integrated circuits 半导体器件 集成电路 第2-20部分：数字集成电路 低压集成电路族规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 17574.11-2006 |
Semiconductor devices - Integrated circuits - Part 2-11: Digital integrated circuits - Blank detail specification for single supply integrated circuit electrically erasable and programmable read-only memory 半导体器件 集成电路 第2-11部分：数字集成电路 单电源集成电路电可擦可编程只读存储器 空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4589.1-2006 |
Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuits 半导体器件 第10部分：分立器件和集成电路总规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 20516-2006 |
Semiconductor devices - Discrete devices - Part 4: Microwave devices 半导体器件 分立器件 第4部分：微波器件 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 20515-2006 |
Semiconductor devices - Integrated circuits - Part 5: Semicustom integrated circuits 半导体器件 集成电路 第5部分：半定制集成电路 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.2-2006 |
Semiconductor devices―Mechanical and climatic test methods―Part 2: Low air pressure 半导体器件 机械和气候试验方法 第2部分:低气压 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4937.1-2006 |
Semiconductor devices―Mechanical and climatic test methods―Part 1: General 半导体器件 机械和气候试验方法 第1部分: 总则 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 20522-2006 |
Semiconductor devices Part 14-3: Semiconductor sensors - Pressure sensors 半导体器件 第14-3部分: 半导体传感器-压力传感器 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 20521-2006 |
Semconductor devices Part 14-1: Semiconductor sensors - General and classification 半导体器件 第14-1部分: 半导体传感器-总则和分类 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 12750-2006 |
Semiconductor devices―Integrated circuits―Part 11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits 半导体器件 集成电路 第11部分：半导体集成电路分规范(不包括混合电路) |
China National Standards Semiconductor devices |
English PDF |
| GB/T 13151-2005 |
Semiconductor devices Discrete devices Part 6:Thyristors Section Three-Blank detail specification for reverse blocking triode thyristors,ambient and case-rated,for currents greater than 100A 半导体器件 分立器件 第6部分:晶闸管 第3篇 电流大于 100A、环境和管壳额定的反向阻断三极晶闸管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 13150-2005 |
Semiconductor devices Discret devices Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A 半导体器件 分立器件 电流大于 100A、环境和管壳额定的双向三极晶闸管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 2900.66-2004 |
Electrotechnical terminology--Semiconductor devices and integrated circuits 电工术语 半导体器件和集成电路 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 19403.1-2003 |
Semiconductor devices--Integrated circuits--Part 11:Section 1:Internal visual examination for semiconductor integrated circuits(excluding hybrid circuits) 半导体器件 集成电路 第11部分:第1篇:半导体集成电路 内部目检 (不包括混合电路) |
China National Standards Semiconductor devices |
English PDF |
| GB/T 17574.10-2003 |
Semiconductor devices--Integrated circuits--Part 2-10:Digital integrated circuits--Blank detail specification for integrated circuit dynamicread/write memories 半导体器件 集成电路 第2-10部分:数字集成电路 集成电路动态读/写存储器空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 15651.3-2003 |
Discrete Semiconductor devices and integrated circuits--Part 5-3:Optoelectronic devices--Measuring methods 半导体分立器件和集成电路 第5-3部分:光电子器件 测试方法 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 15651.2-2003 |
Discrete Semiconductor devices and integrated circuits--Part 5-2:Optoelectronic devices--Essential ratings and characteristics 半导体分立器件和集成电路 第5-2部分:光电子器件 基本额定值和特性 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 18904.5-2003 |
Semiconductor devices--Part 12-5: Optoelectronic devices--Blank detail specification for pin-photodiodes with/without pigtail，for fibre optic systems or subsystems 半导体器件 第12-5部分:光电子器件 纤维光学系统或子系统用带/不带尾纤的pin光电二极管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 6589-2002 |
Semiconductordevices--Discrete devices--Part 3-2:Signal (including switching) and regulator diodes--Blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes) 半导体器件 分立器件 第3-2部分:信号(包括开关)和调整二极管 电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管) 空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 18904.4-2002 |
Semiconductor devices--Part 12-4:Optoelectronicdevices--Blank detail specification for pin-FET modules with/without pigtailfor fiber optic systems or sub-systems 半导体器件 第12-4部分:光电子器件 纤维光学系统或子系统用带/不带尾纤的Pin-FET模块空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 18904.3-2002 |
Semiconductor devices--Part 12-3:Optoelectronic devices--Blank detail specification for light-emitting diodes--Display application 半导体器件 第12-3部分:光电子器件 显示用发光二极管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 18904.2-2002 |
Semiconductor devices--Part 12-2:Optoelectronic devices--Blank detail specification for laser diodes modules with pigtail for fiber optic systems or sub-systems 半导体器件 第12-2部分:光电子器件 纤维光学系统或子系统用带尾纤的激光二极管模块空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 18904.1-2002 |
Semiconductor devices--Part 12-1:Optoelectronic devices--Blank detail specification for light emitting/infrared emitting diodes with/without pigtail for fiber optic systems or sub-systems 半导体器件 第12-1部分:光电子器件 纤维光学系统或子系统用带/不带尾纤的光发射或红外发射二极管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 18500.2-2001 |
Semiconductor devices--Integrated circuits--Part 4:Interface integrated circuits--Section 2:Blank detail specification for linear analogue-to-digital converters(ADC) 半导体器件 集成电路 第4部分:接口集成电路 第二篇:线性模拟/数字转换器(ADC)空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 18500.1-2001 |
Semiconductor devices--Integrated circuits--Part 4:Interface integrated circuits--Section 1:Blank detail specification for linear digital-to-analogue converters(DAC) 半导体器件 集成电路 第4部分:接口集成电路 第一篇:线性数字/模拟转换器(DAC)空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 11499-2001 |
Letter symbols for discrete Semiconductor devices 半导体分立器件文字符号 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 6588-2000 |
Semiconductor devices--Discrete devices--Part 3:Signal(including switching) and regulator diodes--Section One--Blank detail specification for signal diodes，switching diodes and controlled-avalanche diodes 半导体器件 分立器件 第3部分:信号(包括开关)和调整二极管 第1篇 信号二极管、开关二极管和可控雪崩二极管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 5965-2000 |
Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section one--Blank detail specification for bipolar monolithic digital integrated circuit gates(excluding uncommitted logic arrays) 半导体器件 集成电路 第2部分:数字集成电路 第一篇 双极型单片数字集成电路门电路(不包括自由逻辑阵列) 空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 17940-2000 |
Semiconductor devices--Integrated circuits--Part 3:Analogue integrated circuits 半导体器件 集成电路 第3部分:模拟集成电路 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 12560-1999 |
Semiconductor devices--Sectional specification for discrete devices 半导体器件 分立器件分规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 9424-1998 |
Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section Five:Blank detail specification for complementary MOS digital inte-grated circuits，series 4000B and 4000UB 半导体器件 集成电路 第2部分:数字集成电路 第五篇 CMOS数字集成电路4000B和4000UB系列空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 7576-1998 |
Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification 半导体器件 分立器件 第7部分:双极型晶体管 第四篇 高频放大管壳额定双极型晶体管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 6590-1998 |
Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs)，ambient or case-rated，up to 100A 半导体器件 分立器件 第6部分:闸流晶体管 第二篇 100A以下环境或管壳额定的双向三极闸流晶体管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 6352-1998 |
Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors，ambient or case-rated，up to 100A 半导体器件 分立器件 第6部分:闸流晶体管 第一篇 100A以下环境或管壳额定反向阻断三极闸流晶体管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 6351-1998 |
Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes)，ambient and case-rated，up to 100A 半导体器件 分立器件 第2部分:整流二极管 第一篇 100A以下环境或管壳额定整流二极管(包括雪崩整流二极管)空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 6219-1998 |
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz 半导体器件 分立器件 第8部分:场效应晶体管 第一篇 1 GHz、5 W以下的单栅场效应晶体管 空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 6217-1998 |
Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification 半导体器件 分立器件 第7部分:双极型晶体管 第一篇 高低频放大环境额定的双极型晶体管空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 17574-1998 |
Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits 半导体器件 集成电路 第2部分:数字集成电路 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 17573-1998 |
Semiconductor devices--Discrete devices and integrated circuits--Part 1:General 半导体器件 分立器件和集成电路 第1部分:总则 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 17572-1998 |
Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section Four:Family specification for complementary MOS digital integrated circuits，series 4000B and 4000UB 半导体器件 集成电路 第2部分:数字集成电路 第四篇 CMOS数字集成电路 4000B和4000UB系列族规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4023-1997 |
Semiconductor devices--Discrete devices and integrated circuits--Part 2:Rectifier diodes 半导体器件 分立器件和集成电路 第2部分:整流二极管 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 17024-1997 |
Semiconductor devices--integratedcircuits--Part 2:Digital integrated circuits--Section three--Blank detail specification for HCMOS digital integrated circuits series 54/74HC，54/74HCT，54/74HCU 半导体器件 集成电路 第2部分:数字集成电路 第三篇 HCMOS数字集成电路54/74HC、54/74HCT、54/74HCU系列空白详细规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 17023-1997 |
Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section two--Family specification for HCMOS digital integrated circuits series 54/74HC，54/74HCT，54/74HCU 半导体器件 集成电路 第2部分:数字集成电路 第二篇 HCMOS数字集成电路54/74HC、54/74HCT、54/74HCU系列族规范 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 16464-1996 |
Semiconductor devices--Integrated circuits--Part 1:General 半导体器件 集成电路 第1部分:总则 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 15879-1995 |
Mechanical standardization of Semiconductor devices--Part 5:Recommendations applying to tape automated bonding (TAB) of integrated circuits 半导体器件的机械标准化 第5部分:用于集成电路载带自动焊(TAB)的推荐值 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 6571-1995 |
Semiconductordevices--Discrete devices--Part 3:Signal(including switching)and regulator diodes 半导体器件 分立器件 第3部分:信号(包括开关)和调整二极管 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 15651-1995 |
Semiconductor devices--Discrete devices and integrated circuits--Part 5:Optoelectronic devices 半导体器件 分立器件和集成电路 第5部分:光电子器件 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4587-1994 |
Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistors 半导体分立器件和集成电路 第7部分:双极型晶体管 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 4586-1994 |
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors 半导体器件 分立器件 第8部分:场效应晶体管 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 15291-1994 |
Semiconductor devices--Part 6:Thyristors 半导体器件 第6部分 晶闸管 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 12565-1990 |
Semiconductor devices--Sectional specification for optoelectronic devices 半导体器件 光电子器件分规范 (可供认证用) |
China National Standards Semiconductor devices |
English PDF |
| GB/T 249-1989 |
The rule of type designation for discrete Semiconductor devices 半导体分立器件型号命名方法 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 7581-1987 |
Dimensions of outlines for semiconductor discrete devices 半导体分立器件外形尺寸 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 7423.3-1987 |
Heat sink of Semiconductor devices--Heat sink， staggered fingers shapes 半导体器件散热器 叉指形散热器 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 7423.2-1987 |
Heat sink of Semiconductor devices--Heat sink，extruded shapes 半导体器件散热器 型材散热器 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 7423.1-1987 |
Heat sink of Semiconductor devices--Generic specification 半导体器件散热器 通用技术条件 |
China National Standards Semiconductor devices |
English PDF |
| GB/T 5839-1986 |
Rating systems for electronic tubes and Semiconductor devices 电子管和半导体器件额定值制 |
China National Standards Semiconductor devices |
English PDF |
| Find out:123Items | To Page of: First -Previous-Next -Last | 1 |
+86-755-25831330
