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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GB/T 6352-1998 |
Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors，ambient or case-rated，up to 100A 半导体器件 分立器件 第6部分:闸流晶体管 第一篇 100A以下环境或管壳额定反向阻断三极闸流晶体管空白详细规范 |
China National Standards One:Blank |
 English PDF |
| GB/T 6351-1998 |
Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes)，ambient and case-rated，up to 100A 半导体器件 分立器件 第2部分:整流二极管 第一篇 100A以下环境或管壳额定整流二极管(包括雪崩整流二极管)空白详细规范 |
China National Standards One:Blank |
English PDF |
| GB/T 6219-1998 |
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz 半导体器件 分立器件 第8部分:场效应晶体管 第一篇 1 GHz、5 W以下的单栅场效应晶体管 空白详细规范 |
China National Standards One:Blank |
English PDF |
| GB/T 6217-1998 |
Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification 半导体器件 分立器件 第7部分:双极型晶体管 第一篇 高低频放大环境额定的双极型晶体管空白详细规范 |
China National Standards One:Blank |
English PDF |
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