Standard Code | Standard Title | Standard Class | Order |
---|---|---|---|
GB/T 43366-2023 |
General specification for semiconductor discrete devices for aerospace applications {译} 宇航用半导体分立器件通用规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 4587-2023 |
Semiconductor devices Discrete Devices Part 7: Bipolar Transistors {译} 半导体器件 分立器件 第7部分:双极型晶体管 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 15651.4-2017 |
Semiconductor devices—Discrete devices—Part 5-4:Optoelectronic devices—Semiconductor lasers 半导体器件 分立器件 第5-4部分:光电子器件 半导体激光器 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 249-2017 |
The rule of type designation for discrete semiconductor devices 半导体分立器件型号命名方法 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 4023-2015 |
Semiconductor devices—Discrete devices and integrated circuits— Part 2: Rectifier diodes 半导体器件 分立器件和集成电路 第2部分:整流二极管 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 29332-2012 |
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT) 半导体器件 分立器件 第9部分:绝缘栅双极晶体管(IGBT) |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 21039.1-2007 |
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification 半导体器件 分立器件 第4-1部分:微波二极管和晶体管 微波场效应晶体管空白详细规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 4589.1-2006 |
Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuits 半导体器件 第10部分:分立器件和集成电路总规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 20516-2006 |
Semiconductor devices - Discrete devices - Part 4: Microwave devices 半导体器件 分立器件 第4部分:微波器件 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 13151-2005 |
Semiconductor devices Discrete devices Part 6:Thyristors Section Three-Blank detail specification for reverse blocking triode thyristors,ambient and case-rated,for currents greater than 100A 半导体器件 分立器件 第6部分:晶闸管 第3篇 电流大于 100A、环境和管壳额定的反向阻断三极晶闸管空白详细规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 15651.3-2003 |
Discrete semiconductor devices and integrated circuits--Part 5-3:Optoelectronic devices--Measuring methods 半导体分立器件和集成电路 第5-3部分:光电子器件 测试方法 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 15651.2-2003 |
Discrete semiconductor devices and integrated circuits--Part 5-2:Optoelectronic devices--Essential ratings and characteristics 半导体分立器件和集成电路 第5-2部分:光电子器件 基本额定值和特性 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 6589-2002 |
Semiconductordevices--Discrete devices--Part 3-2:Signal (including switching) and regulator diodes--Blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes) 半导体器件 分立器件 第3-2部分:信号(包括开关)和调整二极管 电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管) 空白详细规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 11499-2001 |
Letter symbols for discrete semiconductor devices 半导体分立器件文字符号 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 6588-2000 |
Semiconductor devices--Discrete devices--Part 3:Signal(including switching) and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlled-avalanche diodes 半导体器件 分立器件 第3部分:信号(包括开关)和调整二极管 第1篇 信号二极管、开关二极管和可控雪崩二极管空白详细规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 12560-1999 |
Semiconductor devices--Sectional specification for discrete devices 半导体器件 分立器件分规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 7576-1998 |
Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification 半导体器件 分立器件 第7部分:双极型晶体管 第四篇 高频放大管壳额定双极型晶体管空白详细规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 6590-1998 |
Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100A 半导体器件 分立器件 第6部分:闸流晶体管 第二篇 100A以下环境或管壳额定的双向三极闸流晶体管空白详细规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 6352-1998 |
Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A 半导体器件 分立器件 第6部分:闸流晶体管 第一篇 100A以下环境或管壳额定反向阻断三极闸流晶体管空白详细规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 6351-1998 |
Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes),ambient and case-rated,up to 100A 半导体器件 分立器件 第2部分:整流二极管 第一篇 100A以下环境或管壳额定整流二极管(包括雪崩整流二极管)空白详细规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 6219-1998 |
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz 半导体器件 分立器件 第8部分:场效应晶体管 第一篇 1 GHz、5 W以下的单栅场效应晶体管 空白详细规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 6217-1998 |
Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification 半导体器件 分立器件 第7部分:双极型晶体管 第一篇 高低频放大环境额定的双极型晶体管空白详细规范 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 17573-1998 |
Semiconductor devices--Discrete devices and integrated circuits--Part 1:General 半导体器件 分立器件和集成电路 第1部分:总则 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 4023-1997 |
Semiconductor devices--Discrete devices and integrated circuits--Part 2:Rectifier diodes 半导体器件 分立器件和集成电路 第2部分:整流二极管 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 6571-1995 |
Semiconductordevices--Discrete devices--Part 3:Signal(including switching)and regulator diodes 半导体器件 分立器件 第3部分:信号(包括开关)和调整二极管 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 15651-1995 |
Semiconductor devices--Discrete devices and integrated circuits--Part 5:Optoelectronic devices 半导体器件 分立器件和集成电路 第5部分:光电子器件 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 4587-1994 |
Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistors 半导体分立器件和集成电路 第7部分:双极型晶体管 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 4586-1994 |
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors 半导体器件 分立器件 第8部分:场效应晶体管 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 249-1989 |
The rule of type designation for discrete semiconductor devices 半导体分立器件型号命名方法 |
China National Standards Semiconductor devices Discrete |
English PDF |
GB/T 7581-1987 |
Dimensions of outlines for semiconductor discrete devices 半导体分立器件外形尺寸 |
China National Standards Semiconductor devices Discrete |
English PDF |
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