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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GB/T 14146-2021 |
Test method for carrier concentration of Silicon epitaxial layers - Capacitance-voltage method 硅外延层载流子浓度的测试 电容-电压法 |
China National Standards Silicon epitaxial layers |
 English PDF |
| GB/T 14142-2017 |
Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique 硅外延层晶体完整性检验方法 腐蚀法 |
China National Standards Silicon epitaxial layers |
English PDF |
| GB/T 14863-2013 |
Method for net carrier density in Silicon epitaxial layers by voltage-capacitance of gated and ungated diodes 用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法 |
China National Standards Silicon epitaxial layers |
English PDF |
| GB/T 14847-2010 |
Test mothod for thickness of lightly doped Silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance 重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法 |
China National Standards Silicon epitaxial layers |
English PDF |
| GB/T 14146-2009 |
Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method 硅外延层载流子浓度测定 汞探针电容-电压法 |
China National Standards Silicon epitaxial layers |
English PDF |
| GB/T 14141-2009 |
Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array 硅外延层、扩散层和离子注入层薄层电阻的测定 直排四探针法 |
China National Standards Silicon epitaxial layers |
English PDF |
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