Standard Code | Standard Title | Standard Class | Order |
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GB/T 43493.3-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分:缺陷的光致发光检测方法 |
China National Standards Test method silicon |
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GB/T 43493.2-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 2: Optical detection methods for defects {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分:缺陷的光学检测方法 |
China National Standards Test method silicon |
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GB/T 1558-2023 |
Infrared absorption test method for substituted carbon content in silicon {译} 硅中代位碳含量的红外吸收测试方法 |
China National Standards Test method silicon |
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GB/T 43313-2023 |
Testing of surface quality and microtube density of polished silicon carbide wafers by confocal differential interference method {译} 碳化硅抛光片表面质量和微管密度的测试 共焦点微分干涉法 |
China National Standards Test method silicon |
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GB/T 42897-2023 |
Microelectromechanical systems (MEMS) technology Silicon-based MEMS nano-thickness film tensile strength test method {译} 微机电系统(MEMS)技术 硅基MEMS纳米厚度膜抗拉强度试验方法 |
China National Standards Test method silicon |
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GB/T 42896-2023 |
Microelectromechanical systems (MEMS) technology Silicon-based MEMS nanoscale structure impact test method {译} 微机电系统(MEMS)技术 硅基MEMS纳尺度结构冲击试验方法 |
China National Standards Test method silicon |
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GB/T 42895-2023 |
Microelectromechanical systems (MEMS) technology Silicon-based MEMS microstructure bending strength test method {译} 微机电系统(MEMS)技术 硅基MEMS微结构弯曲强度试验方法 |
China National Standards Test method silicon |
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GB/T 42907-2023 |
Testing of non-equilibrium carrier recombination lifetime in silicon ingots, silicon blocks and silicon wafers Non-contact eddy current induction method {译} 硅锭、硅块和硅片中非平衡载流子复合寿命的测试 非接触涡流感应法 |
China National Standards Test method silicon |
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GB/T 42905-2023 |
Testing of Silicon Carbide Epitaxial Layer Thickness Infrared Reflection Method {译} 碳化硅外延层厚度的测试 红外反射法 |
China National Standards Test method silicon |
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GB/T 42902-2023 |
Testing of surface defects of silicon carbide epitaxial wafers Laser scattering method {译} 碳化硅外延片表面缺陷的测试 激光散射法 |
China National Standards Test method silicon |
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GB/T 42789-2023 |
Test method for silicon wafer surface gloss {译} 硅片表面光泽度的测试方法 |
China National Standards Test method silicon |
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GB/T 41605-2022 |
Silicon nitride materials for rolling bearing balls - Test method for indentation fracture resistance at room temperature - Indentation method {译} 滚动轴承球用氮化硅材料 室温压痕断裂阻力试验方法 压痕法 |
China National Standards Test method silicon |
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GB/T 41490-2022 |
Test method for rolling contact fatigue of silicon nitride ceramics at room temperature ball plate method {译} 氮化硅陶瓷 室温下滚动接触疲劳试验方法 球板法 |
China National Standards Test method silicon |
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GB/T 32280-2022 |
Test method for warp and bow of silicon wafers—Automated non-contact scanning method 硅片翘曲度和弯曲度的测试 自动非接触扫描法 |
China National Standards Test method silicon |
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GB/T 24581-2022 |
Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method 硅单晶中III、V族杂质含量的测定 低温傅立叶变换红外光谱法 |
China National Standards Test method silicon |
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GB/T 41765-2022 |
Test method for dislocation density of silicon carbide single crystal {译} 碳化硅单晶位错密度的测试方法 |
China National Standards Test method silicon |
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GB/T 41737-2022 |
Aluminum matrix composites - Test method for volume fraction of silicon carbide - Dissolution method {译} 铝基复合材料 碳化硅体积分数试验方法 溶解法 |
China National Standards Test method silicon |
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GB/T 40279-2021 |
Test method for thickness of films on silicon wafer surface—Optical reflection method 硅片表面薄膜厚度的测试 光学反射法 |
China National Standards Test method silicon |
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GB/T 34520.8-2021 |
Test methods of continuous silicon carbide fibers—Part 8:Oxygen content 连续碳化硅纤维测试方法 第8部分:氧含量 |
China National Standards Test method silicon |
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GB/T 34520.9-2021 |
Test methods of continuous silicon carbide fibers - Part 9: Carbon content 连续碳化硅纤维测试方法 第9部分:碳含量 |
China National Standards Test method silicon |
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GB/T 14146-2021 |
Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method 硅外延层载流子浓度的测试 电容-电压法 |
China National Standards Test method silicon |
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GB/T 1551-2021 |
Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method 硅单晶电阻率的测定 直排四探针法和直流两探针法 |
China National Standards Test method silicon |
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GB/T 39145-2020 |
Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry 硅片表面金属元素含量的测定 电感耦合等离子体质谱法 |
China National Standards Test method silicon |
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GB/T 38976-2020 |
Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method 硅材料中氧含量的测试 惰性气体熔融红外法 |
China National Standards Test method silicon |
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GB/T 37385-2019 |
Test method for chloride content of silicon—Ion chromatography method 硅中氯离子含量的测定 离子色谱法 |
China National Standards Test method silicon |
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GB/T 37240-2018 |
Test and evaluation methods for light transmission property of cover glass for crystalline silicon photovoltaic module 晶体硅光伏组件盖板玻璃透光性能测试评价方法 |
China National Standards Test method silicon |
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GB/T 19921-2018 |
Test method for particles on polished silicon wafer surfaces 硅抛光片表面颗粒测试方法 |
China National Standards Test method silicon |
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GB/T 37049-2018 |
Test method for the content of metal impurity in electronic grade polysilicon—Inductively coupled-plasma mass spectrometry method 电子级多晶硅中基体金属杂质含量的测定-电感耦合等离子体质谱法 |
China National Standards Test method silicon |
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GB/T 37213-2018 |
Test method for silicon brick dimension—Laser technology method 硅晶锭尺寸的测定-激光法 |
China National Standards Test method silicon |
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GB/T 4059-2018 |
Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere 硅多晶气氛区熔基磷检验方法 |
China National Standards Test method silicon |
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GB/T 26068-2018 |
Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method 硅片和硅锭载流子复合寿命的测试-非接触微波反射光电导衰减法 |
China National Standards Test method silicon |
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GB/T 36655-2018 |
Test method for alpha crystalline silicon dioxide content of spherical silica powder for electronic packaging—XRD method 电子封装用球形二氧化硅微粉中α态晶体二氧化硅含量的测试方法 XRD法 |
China National Standards Test method silicon |
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GB/T 4060-2018 |
Test method for boron content in polycrystalline silicon by vacuum zone-melting method 硅多晶真空区熔基硼检验方法 |
China National Standards Test method silicon |
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GB/T 1557-2018 |
Test method for determining interstitial oxygen content in silicon by infrared absorption 硅晶体中间隙氧含量的红外吸收测量方法 |
China National Standards Test method silicon |
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GB/T 34520.2-2017 |
Test methods for continuous silicon carbide fiber—Part 2:Diameter of single-filament fiber 连续碳化硅纤维测试方法 第2部分:单纤维直径 |
China National Standards Test method silicon |
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GB/T 34520.1-2017 |
Test methods for continuous silicon carbide fiber—Part 1:Size content of filament yarn 连续碳化硅纤维测试方法 第1部分:束丝上浆率 |
China National Standards Test method silicon |
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GB/T 34520.5-2017 |
Test methods for continuous silicon carbide fiber—Part 5:Tensile properties of single-filament fiber 连续碳化硅纤维测试方法 第5部分:单纤维拉伸性能 |
China National Standards Test method silicon |
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GB/T 34520.4-2017 |
Test methods for continuous silicon carbide fiber—Part 4:Tensile properties of filament yarn 连续碳化硅纤维测试方法 第4部分:束丝拉伸性能 |
China National Standards Test method silicon |
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GB/T 34520.3-2017 |
Test methods for continuous silicon carbide fiber—Part 3:Linear density and density 连续碳化硅纤维测试方法 第3部分:线密度和密度 |
China National Standards Test method silicon |
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GB/T 34520.6-2017 |
Test methods for continuous silicon carbide fiber-Part 6:Resistivity 连续碳化硅纤维测试方法 第6部分:电阻率 |
China National Standards Test method silicon |
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GB/T 34520.7-2017 |
Test methods for continuous silicon carbide fiber—Part 7 :High temperature strength retention rate 连续碳化硅纤维测试方法 第7部分:高温强度保留率 |
China National Standards Test method silicon |
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GB/T 14142-2017 |
Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique 硅外延层晶体完整性检验方法 腐蚀法 |
China National Standards Test method silicon |
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GB/T 35306-2017 |
Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry 硅单晶中碳、氧含量的测定 低温傅立叶变换红外光谱法 |
China National Standards Test method silicon |
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GB/T 6495.11-2016 |
Photovoltaic devices—Part 11: Test method of initial light-induced degradation of crystalline silicon solar cell 光伏器件 第11部分:晶体硅太阳电池初始光致衰减测试方法 |
China National Standards Test method silicon |
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GB/T 32651-2016 |
Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry 采用高质量分辨率辉光放电质谱法测量太阳能级硅中痕量元素的测试方法 |
China National Standards Test method silicon |
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GB/T 32281-2015 |
Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock by secondary ion mass spectrometry 太阳能级硅片和硅料中氧、碳、硼和磷量的测定 二次离子质谱法 |
China National Standards Test method silicon |
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GB/T 32280-2015 |
Test method for warp of silicon wafers—Automated non-contact scanning method 硅片翘曲度测试 自动非接触扫描法 |
China National Standards Test method silicon |
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GB/T 32278-2015 |
Test methods for flatness of monocrystalline silicon carbide wafers 碳化硅单晶片平整度测试方法 |
China National Standards Test method silicon |
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GB/T 32277-2015 |
Test method for instrumental neutron activation analysis (INAA) of silicon 硅的仪器中子活化分析测试方法 |
China National Standards Test method silicon |
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GB/T 24578-2015 |
Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy 硅片表面金属沾污的全反射X光荧光光谱测试方法 |
China National Standards Test method silicon |
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GB/T 31851-2015 |
Test method for alkane plasticizer in structural silicone sealants 硅酮结构密封胶中烷烃增塑剂检测方法 |
China National Standards Test method silicon |
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GB/T 31854-2015 |
Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry 光伏电池用硅材料中金属杂质含量的电感耦合等离子体质谱测量方法 |
China National Standards Test method silicon |
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GB/T 31351-2014 |
Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers 碳化硅单晶抛光片微管密度无损检测方法 |
China National Standards Test method silicon |
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GB/T 31225-2014 |
Test method for the thickness of silicon oxide on Si substrate by ellipsometer 椭圆偏振仪测量硅表面上二氧化硅薄层厚度的方法 |
China National Standards Test method silicon |
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GB/T 30860-2014 |
Test methods for surface roughness and saw mark of silicon wafers for solar cells 太阳能电池用硅片表面粗糙度及切割线痕测试方法 |
China National Standards Test method silicon |
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GB/T 30859-2014 |
Test method for warp and waviness of silicon wafers for solar cells 太阳能电池用硅片翘曲度和波纹度测试方法 |
China National Standards Test method silicon |
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GB/T 30869-2014 |
Test method for thickness and total thickness variation of silicon wafers for solar cell 太阳能电池用硅片厚度及总厚度变化测试方法 |
China National Standards Test method silicon |
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GB/T 30868-2014 |
Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching 碳化硅单晶片微管密度的测定 化学腐蚀法 |
China National Standards Test method silicon |
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GB/T 30867-2014 |
Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers 碳化硅单晶片厚度和总厚度变化测试方法 |
China National Standards Test method silicon |
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GB/T 30866-2014 |
Test method for measuring diameter of monocrystalline silicon carbide wafers 碳化硅单晶片直径测试方法 |
China National Standards Test method silicon |
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GB/T 29852-2013 |
Test method for measuring Phosphorus, Arsenic and Antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry 光伏电池用硅材料中P、As、Sb施主杂质含量的二次离子质谱测量方法 |
China National Standards Test method silicon |
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GB/T 29851-2013 |
Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry 光伏电池用硅材料中B、Al受主杂质含量的二次离子质谱测量方法 |
China National Standards Test method silicon |
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GB/T 29850-2013 |
Test method for measuring compensation degree of silicon materials used for photovoltaic applications 光伏电池用硅材料补偿度测量方法 |
China National Standards Test method silicon |
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GB/T 29849-2013 |
Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry 光伏电池用硅材料表面金属杂质含量的电感耦合等离子体质谱测量方法 |
China National Standards Test method silicon |
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GB/T 29507-2013 |
Test method for measuring flatness, thickness and total thickness variation on silicon wafers by automated non-contact scanning 硅片平整度、厚度及总厚度变化测试 自动非接触扫描法 |
China National Standards Test method silicon |
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GB/T 29505-2013 |
Test method for measuring surface roughness on planar surfaces of silicon wafer 硅片平坦表面的表面粗糙度测量方法 |
China National Standards Test method silicon |
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GB/T 26068-2010 |
Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance 硅片载流子复合寿命的无接触微波反射光电导衰减测试方法 |
China National Standards Test method silicon |
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GB/T 26067-2010 |
Standard test method for dimensions of notches on silicon wafers 硅片切口尺寸测试方法 |
China National Standards Test method silicon |
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GB/T 6621-2009 |
Testing methods for surface flatness of silicon slices 硅片表面平整度测试方法 |
China National Standards Test method silicon |
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GB/T 6620-2009 |
Test method for measuring warp on silicon slices by noncontact scanning 硅片翘曲度非接触式测试方法 |
China National Standards Test method silicon |
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GB/T 6619-2009 |
Test methods for bow of silicon wafers 硅片弯曲度测试方法 |
China National Standards Test method silicon |
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GB/T 6618-2009 |
Test method for thickness and total thickness variation of silicon slices 硅片厚度和总厚度变化测试方法 |
China National Standards Test method silicon |
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GB/T 6617-2009 |
Test method for measuring resistivity of silicon wafer using spreading resistance probe 硅片电阻率测定 扩展电阻探针法 |
China National Standards Test method silicon |
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GB/T 4058-2009 |
Test method for detection of oxidation induced defects in polished silicon wafers 硅抛光片氧化诱生缺陷的检验方法 |
China National Standards Test method silicon |
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GB/T 24578-2009 |
Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy 硅片表面金属沾污的全反射X光荧光光谱测试方法 |
China National Standards Test method silicon |
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GB/T 24577-2009 |
Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography 热解吸气相色谱法测定硅片表面的有机污染物 |
China National Standards Test method silicon |
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GB/T 24575-2009 |
Test method for measuring surface sodium,aluminum,potassium,and iron on silicon and epi substrates by secondary ion mass spectrometry 硅和外延片表面Na、Al、K和Fe的二次离子质谱检测方法 |
China National Standards Test method silicon |
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GB/T 24574-2009 |
Test methods for photoluminescence analysis of single crystal silicon for III-V impurities 硅单晶中Ⅲ-Ⅴ族杂质的光致发光测试方法 |
China National Standards Test method silicon |
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GB/T 24582-2009 |
Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry 酸浸取 电感耦合等离子质谱仪测定多晶硅表面金属杂质 |
China National Standards Test method silicon |
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GB/T 24581-2009 |
Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities 低温傅立叶变换红外光谱法测量硅单晶中III、V族杂质含量的测试方法 |
China National Standards Test method silicon |
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GB/T 24580-2009 |
Test method for measuring boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry 重掺n型硅衬底中硼沾污的二次离子质谱检测方法 |
China National Standards Test method silicon |
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GB/T 24579-2009 |
Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy 酸浸取 原子吸收光谱法测定多晶硅表面金属污染物 |
China National Standards Test method silicon |
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GB/T 1554-2009 |
Testing method for crystallographic perfection of silicon by preferential etch techniques 硅晶体完整性化学择优腐蚀检验方法 |
China National Standards Test method silicon |
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GB/T 1553-2009 |
Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay 硅和锗体内少数载流子寿命测定光电导衰减法 |
China National Standards Test method silicon |
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GB/T 1551-2009 |
Test method for measuring resistivity of monocrystal silicon 硅单晶电阻率测定方法 |
China National Standards Test method silicon |
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GB/T 14144-2009 |
Testing method for determination of radial interstitial oxygen variation in silicon 硅晶体中间隙氧含量径向变化测量方法 |
China National Standards Test method silicon |
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GB/T 14141-2009 |
Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array 硅外延层、扩散层和离子注入层薄层电阻的测定 直排四探针法 |
China National Standards Test method silicon |
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GB/T 13387-2009 |
Test method for measuring flat length wafers of silicon and other electronic materials 硅及其它电子材料晶片参考面长度测量方法 |
China National Standards Test method silicon |
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GB/T 1558-2009 |
Test method for substitutional atomic carbon concent of silicon by infrared absorption 硅中代位碳原子含量 红外吸收测量方法 |
China National Standards Test method silicon |
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GB/T 16175-2008 |
Biological evaluation test methods for medical organic silicon materials 医用有机硅材料生物学评价试验方法 |
China National Standards Test method silicon |
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GB/T 19922-2005 |
Standard test methods for measuring site flatness on silicon wafers by noncontact scanning 硅片局部平整度非接触式标准测试方法 |
China National Standards Test method silicon |
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GB/T 19921-2005 |
Test method of particles on silicon wafer surfaces 硅抛光片表面颗粒测试方法 |
China National Standards Test method silicon |
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GB/T 14142-1993 |
Test method for crystallographic perfection of epit-axial layers in silicon by etching techniques 硅外延层晶体完整性检查方法 腐蚀法 |
China National Standards Test method silicon |
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