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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GB/T 43493.3-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法 |
China National Standards Testing Silicon Carbide |
 English PDF |
| GB/T 43493.2-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 2: Optical detection methods for defects {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分：缺陷的光学检测方法 |
China National Standards Testing Silicon Carbide |
English PDF |
| GB/T 43493.1-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 1: Defect classification {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分：缺陷分类 |
China National Standards Testing Silicon Carbide |
English PDF |
| GB/T 43313-2023 |
Testing of surface quality and microtube density of polished silicon carbide wafers by confocal differential interference method {译} 碳化硅抛光片表面质量和微管密度的测试 共焦点微分干涉法 |
China National Standards Testing Silicon Carbide |
English PDF |
| GB/T 42905-2023 |
Testing of Silicon Carbide Epitaxial Layer Thickness Infrared Reflection Method {译} 碳化硅外延层厚度的测试 红外反射法 |
China National Standards Testing Silicon Carbide |
English PDF |
| GB/T 42902-2023 |
Testing of surface defects of silicon carbide epitaxial wafers Laser scattering method {译} 碳化硅外延片表面缺陷的测试 激光散射法 |
China National Standards Testing Silicon Carbide |
English PDF |
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