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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GB/T 43493.3-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法 |
China National Standards Testing semiconductor wafer |
 English PDF |
| GB/T 43493.2-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 2: Optical detection methods for defects {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分：缺陷的光学检测方法 |
China National Standards Testing semiconductor wafer |
English PDF |
| GB/T 43493.1-2023 |
Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 1: Defect classification {译} 半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分：缺陷分类 |
China National Standards Testing semiconductor wafer |
English PDF |
| GB/T 6616-2023 |
Testing of semiconductor wafer resistivity and semiconductor film sheet resistance non-contact eddy current method {译} 半导体晶片电阻率及半导体薄膜薄层电阻的测试 非接触涡流法 |
China National Standards Testing semiconductor wafer |
English PDF |
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