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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GB/T 44004-2024 |
Nanotechnology - Test Methods for Characterization of Organic Transistors and Materials {译} 纳米技术-有机晶体管和材料表征试验方法 |
China National Standards Transistors |
 English PDF |
| GB/T 43777-2024 |
Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and photoTransistors {译} 化妆品中功效组分虾青素的测定-高效液相色谱法 |
China National Standards Transistors |
English PDF |
| GB/T 4587-2023 |
Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors {译} 半导体器件 分立器件 第7部分：双极型晶体管 |
China National Standards Transistors |
English PDF |
| GB/T 29332-2012 |
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar Transistors(IGBT) 半导体器件 分立器件 第9部分：绝缘栅双极晶体管(IGBT) |
China National Standards Transistors |
English PDF |
| GB/T 21039.1-2007 |
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and Transistors - Microwave field effect transistors - Blank detail specification 半导体器件 分立器件 第4-1部分：微波二极管和晶体管 微波场效应晶体管空白详细规范 |
China National Standards Transistors |
English PDF |
| GB/T 7576-1998 |
Semiconductor devices--Discrete devices--Part 7:Bipolar Transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification 半导体器件 分立器件 第7部分:双极型晶体管 第四篇 高频放大管壳额定双极型晶体管空白详细规范 |
China National Standards Transistors |
English PDF |
| GB/T 6219-1998 |
Semiconductor devices--Discrete devices--Part 8:Field-effect Transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz 半导体器件 分立器件 第8部分:场效应晶体管 第一篇 1 GHz、5 W以下的单栅场效应晶体管 空白详细规范 |
China National Standards Transistors |
English PDF |
| GB/T 6217-1998 |
Semiconductor devices--Discrete devices--Part 7:Bipolar Transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification 半导体器件 分立器件 第7部分:双极型晶体管 第一篇 高低频放大环境额定的双极型晶体管空白详细规范 |
China National Standards Transistors |
English PDF |
| GB/T 7577-1996 |
Blank detail specification for case-rated bipolar Transistors for low-frequency amplification 低频放大管壳额定的双极型晶体管空白详细规范 |
China National Standards Transistors |
English PDF |
| GB/T 6218-1996 |
Blank detail specification for bipolar Transistors for switching applications 开关用双极型晶体管空白详细规范 |
China National Standards Transistors |
English PDF |
| GB/T 16468-1996 |
Series programmes for static induction Transistors 静电感应晶体管系列型谱 |
China National Standards Transistors |
English PDF |
| GB/T 15449-1995 |
Blank detail-specification for field-effect Transistors for case-rated switching application 管壳额定开关用场效应晶体管 空白详细规范 |
China National Standards Transistors |
English PDF |
| GB/T 4587-1994 |
Semiconductor discrete devices and integrated circuits--Part 7:Bipolar Transistors 半导体分立器件和集成电路 第7部分:双极型晶体管 |
China National Standards Transistors |
English PDF |
| GB/T 4586-1994 |
Semiconductor devices--Discrete devices--Part 8:Field-effect Transistors 半导体器件 分立器件 第8部分:场效应晶体管 |
China National Standards Transistors |
English PDF |
| GB/T 12300-1990 |
Test methods of safe operating area for power Transistors 功率晶体管安全工作区测试方法 |
China National Standards Transistors |
English PDF |
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