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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GB/T 43777-2024 |
Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors {译} 化妆品中功效组分虾青素的测定-高效液相色谱法 |
China National Standards diodes |
 English PDF |
| GB/T 15651.6-2023 |
Semiconductor devices Part 5-6: Optoelectronic devices Light emitting diodes {译} 半导体器件 第5-6部分：光电子器件 发光二极管 |
China National Standards diodes |
English PDF |
| GB/T 36360-2018 |
Semiconductor optoelectronic devices--Blank detail specification for middle power light-emitting diodes 半导体光电子器件 中功率发光二极管空白详细规范 |
China National Standards diodes |
English PDF |
| GB/T 36358-2018 |
Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes 半导体光电子器件 功率发光二极管空白详细规范 |
China National Standards diodes |
English PDF |
| GB/T 36359-2018 |
Semiconductor optoelectronic devices—Blank detail specification for lower power light-emitting diodes 半导体光电子器件 小功率发光二极管空白详细规范 |
China National Standards diodes |
English PDF |
| GB/T 4023-2015 |
Semiconductor devices—Discrete devices and integrated circuits— Part 2: Rectifier diodes 半导体器件 分立器件和集成电路 第2部分：整流二极管 |
China National Standards diodes |
English PDF |
| GB/T 14863-2013 |
Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes 用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法 |
China National Standards diodes |
English PDF |
| GB/T 23729-2009 |
Photodiodes for scintillation detectors - Test procedures 闪烁探测器用光电二极管 试验方法 |
China National Standards diodes |
English PDF |
| GB/T 21039.1-2007 |
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification 半导体器件 分立器件 第4-1部分：微波二极管和晶体管 微波场效应晶体管空白详细规范 |
China National Standards diodes |
English PDF |
| GB/T 18904.5-2003 |
Semiconductor devices--Part 12-5: Optoelectronic devices--Blank detail specification for pin-photodiodes with/without pigtail，for fibre optic systems or subsystems 半导体器件 第12-5部分:光电子器件 纤维光学系统或子系统用带/不带尾纤的pin光电二极管空白详细规范 |
China National Standards diodes |
English PDF |
| GB/T 6589-2002 |
Semiconductordevices--Discrete devices--Part 3-2:Signal (including switching) and regulator diodes--Blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes) 半导体器件 分立器件 第3-2部分:信号(包括开关)和调整二极管 电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管) 空白详细规范 |
China National Standards diodes |
English PDF |
| GB/T 18904.3-2002 |
Semiconductor devices--Part 12-3:Optoelectronic devices--Blank detail specification for light-emitting diodes--Display application 半导体器件 第12-3部分:光电子器件 显示用发光二极管空白详细规范 |
China National Standards diodes |
English PDF |
| GB/T 18904.2-2002 |
Semiconductor devices--Part 12-2:Optoelectronic devices--Blank detail specification for laser diodes modules with pigtail for fiber optic systems or sub-systems 半导体器件 第12-2部分:光电子器件 纤维光学系统或子系统用带尾纤的激光二极管模块空白详细规范 |
China National Standards diodes |
English PDF |
| GB/T 18904.1-2002 |
Semiconductor devices--Part 12-1:Optoelectronic devices--Blank detail specification for light emitting/infrared emitting diodes with/without pigtail for fiber optic systems or sub-systems 半导体器件 第12-1部分:光电子器件 纤维光学系统或子系统用带/不带尾纤的光发射或红外发射二极管空白详细规范 |
China National Standards diodes |
English PDF |
| GB/T 6588-2000 |
Semiconductor devices--Discrete devices--Part 3:Signal(including switching) and regulator diodes--Section One--Blank detail specification for signal diodes，switching diodes and controlled-avalanche diodes 半导体器件 分立器件 第3部分:信号(包括开关)和调整二极管 第1篇 信号二极管、开关二极管和可控雪崩二极管空白详细规范 |
China National Standards diodes |
English PDF |
| GB/T 6351-1998 |
Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes)，ambient and case-rated，up to 100A 半导体器件 分立器件 第2部分:整流二极管 第一篇 100A以下环境或管壳额定整流二极管(包括雪崩整流二极管)空白详细规范 |
China National Standards diodes |
English PDF |
| GB/T 4023-1997 |
Semiconductor devices--Discrete devices and integrated circuits--Part 2:Rectifier diodes 半导体器件 分立器件和集成电路 第2部分:整流二极管 |
China National Standards diodes |
English PDF |
| GB/T 16894-1997 |
Blank detail specification for rectifier diodes (including avalanche rectifier diodes)，ambient and case-rated，for currents greater than 100A 大于100A，环境和管壳额定的整流二极管(包括雪崩整流二极管)空白详细规范 |
China National Standards diodes |
English PDF |
| GB/T 6571-1995 |
Semiconductordevices--Discrete devices--Part 3:Signal(including switching)and regulator diodes 半导体器件 分立器件 第3部分:信号(包括开关)和调整二极管 |
China National Standards diodes |
English PDF |
| GB/T 15649-1995 |
Blank detail specification for semiconductor laser diodes 半导体激光二极管空白详细规范 |
China National Standards diodes |
English PDF |
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