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China epitaxial GB Standards List


  •  China "epitaxial" GB Standards List:
  • Standard  Code Standard Title Standard Class Order
    GB/T 43493.3-2023 Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 3: Photoluminescence detection method of defects {译}
    半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分:缺陷的光致发光检测方法
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    GB/T 43493.2-2023 Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 2: Optical detection methods for defects {译}
    半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分:缺陷的光学检测方法
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    GB/T 43493.1-2023 Semiconductor devices - Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices - Part 1: Defect classification {译}
    半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分:缺陷分类
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    GB/T 42905-2023 Testing of Silicon Carbide epitaxial Layer Thickness Infrared Reflection Method {译}
    碳化硅外延层厚度的测试 红外反射法
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    GB/T 42902-2023 Testing of surface defects of silicon carbide epitaxial wafers Laser scattering method {译}
    碳化硅外延片表面缺陷的测试 激光散射法
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    GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method
    硅外延层载流子浓度的测试 电容-电压法
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    GB/T 14139-2019 Silicon epitaxial wafers
    硅外延片
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    GB/T 37053-2018 General specification for epitaxial wafers and substrates based on gallium nitride
    氮化镓外延片及衬底片通用规范
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    GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique
    硅外延层晶体完整性检验方法 腐蚀法
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    GB/T 35310-2017 200mm silicon epitaxial wafer
    200mm硅外延片
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    GB/T 35308-2017 epitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cell
    太阳能电池用锗基Ⅲ-Ⅴ族化合物外延片
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    GB/T 30655-2014 Test methods for internal quantum efficiency of nitride LED epitaxial layers
    氮化物LED外延片内量子效率测试方法
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    GB/T 30654-2014 Test method for lattice constant of III-nitride epitaxial layers
    Ⅲ族氮化物外延片晶格常数测试方法
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    GB/T 30653-2014 Test method for crystal quality of III-nitride epitaxial layers
    Ⅲ族氮化物外延片结晶质量测试方法
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    GB/T 30652-2014 Trichlorosilane for silicon epitaxial
    硅外延用三氯氢硅
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    GB/T 30856-2014 GaAs substrates for LED epitaxial chips
    LED外延芯片用砷化镓衬底
    China National Standards
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    GB/T 30855-2014 GaP substrates for LED epitaxial chips
    LED外延芯片用磷化镓衬底
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    GB/T 30854-2014 Gallium nitride based epitaxial layer for LED lighting
    LED发光用氮化镓基外延片
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    GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
    用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法
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    GB/T 14847-2010 Test mothod for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
    重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
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    GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
    硅外延层载流子浓度测定 汞探针电容-电压法
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    GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
    硅外延层、扩散层和离子注入层薄层电阻的测定 直排四探针法
    China National Standards
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    GB/T 14139-2009 Silicon epitaxial wafers
    硅外延片
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    GB/T 8758-2006 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
    砷化镓外延层厚度红外干涉测量方法
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    GB/T 11068-2006 Gallium arsenide epitaxial layer - determination of carrier concentration voltage-capacitance method
    砷化镓外延层载流子浓度电容-电压测量方法
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    GB/T 14015-1992 Silicon on sapphire epitaxial wafers
    硅-蓝宝石外延片
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