Cart:
Keyword:
| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ/T 11820-2022 |
Technical requirements and measurement methods for DC parameter test equipment of semiconductor discrete devices {译} 半导体分立器件直流参数测试设备技术要求和测量方法 |
China Electronics Industry
Standards semiconductor |
 English PDF |
| SJ/T 11777—2021 |
Technical requirements and measurement methods of calibrator for semiconductor tube characteristic tracer {译} 半导体管特性图示仪校准仪技术要求和测量方法 |
China Electronics Industry
Standards semiconductor |
English PDF |
| YY/T 0998—2015 |
semiconductor heating and cooling treatment equipment {译} 半导体升降温治疗设备 |
China Pharmaceutics Industry
Standards semiconductor |
English PDF |
| YY/T 1751-2020 |
Laser Therapy Equipment semiconductor Laser Nasal Radiation Therapy Device {译} 激光治疗设备 半导体激光鼻腔内照射治疗仪 |
China Pharmaceutics Industry
Standards semiconductor |
English PDF |
| SJ/T 11763-2020 |
Specification for Human Machine Interface for semiconductor Manufacturing Equipment {译} 半导体制造设备人机界面规范 |
China Electronics Industry
Standards semiconductor |
English PDF |
| SJ/T 11762-2020 |
semiconductor Equipment Manufacturing Information Labeling Requirements {译} 半导体设备制造信息标识要求 |
China Electronics Industry
Standards semiconductor |
English PDF |
| SJ/T 11761-2020 |
Specification for Load Ports of semiconductor Equipment for Wafers 200mm and Smaller {译} 200mm及以下晶圆用半导体设备装载端口规范 |
China Electronics Industry
Standards semiconductor |
English PDF |
| SJ/T 2749-2016 |
(The semiconductor laser diode test) 半导体激光二极管测试方法 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.16-2016 |
(The semiconductor infrared emitting diodes measuring methods - Part 16: photoelectric conversion efficiency) 半导体红外发射二极管测量方法 第16部分：光电转换效率 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.15-2016 |
(The semiconductor infrared emitting diodes measuring methods - Part 15: Thermal resistance) 半导体红外发射二极管测量方法 第15部分：热阻 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.14-2016 |
(The semiconductor infrared emitting diodes measuring methods - Part 14: Junction Temperature) 半导体红外发射二极管测量方法 第14部分：结温 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 11586-2016 |
(The semiconductor device 10keV low-energy X-ray test method for total dose radiation) 半导体器件 10kev低能x射线总剂量辐射试验方法 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 11577-2016 |
(SJ/T 11394-2009 "semiconductor light-emitting diode test method" Application Guide) sj/t 11394-2009《半导体发光二极管测试方法》应用指南 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 1839-2016 |
(semiconductor discrete device 3DK108 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk108型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 1838-2016 |
(semiconductor discrete device 3DK29 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk29型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 1834-2016 |
(semiconductor discrete device 3DK104 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk104型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 1833-2016 |
(semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk103型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 1832-2016 |
(semiconductor discrete device 3DK102 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk102型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 1831-2016 |
(semiconductor discrete device 3DK28 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk28型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 1830-2016 |
(semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk101型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 1826-2016 |
(semiconductor discrete device 3DK100 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk100型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 1486-2016 |
(Discrete semiconductor devices 3CG180 silicon PNP frequency high power transistor backpressure small detail specification) 半导体分立器件 3cg180型硅ｐｎｐ高频高反压小功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 1480-2016 |
(Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg130型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 1477-2016 |
(Discrete semiconductor devices 3CG120 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg120型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 1472-2016 |
(Discrete semiconductor devices 3CG110 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg110型硅pnp高频小功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| YY 1289-2016 |
(Laser therapy equipment ophthalmic semiconductor laser photocoagulation instrument) 激光治疗设备眼科半导体激光光凝仪 |
China Medicine & Medical Device
Standards semiconductor |
English PDF |
| SJ/T 2658.9-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 9: Spatial distribution of radiant intensity and half-intensity angle 半导体红外发射二极管测量方法 第9部分：辐射强度空间分布和半强度角 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.8-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 8: Radiant intensity 半导体红外发射二极管测量方法 第8部分：辐射强度 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.7-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 7: Radiant flux 半导体红外发射二极管测量方法 第7部分：辐射通量 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.6-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 6: Radiant power 半导体红外发射二极管测量方法 第6部分：辐射功率 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.5-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 5: Series connection resistance 半导体红外发射二极管测量方法 第5部分：串联电阻 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.4-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 4: Total capacitance 半导体红外发射二极管测量方法 第4部分：总电容 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.3-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 3: Reverse voltage and reverse current 半导体红外发射二极管测量方法 第3部分：反向电压和反向电流 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.2-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 2: Forward voltage 半导体红外发射二极管测量方法 第2部分：正向电压 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.13-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 13: Temperature coefficient for radiant power 半导体红外发射二极管测量方法 第13部分：辐射功率温度系数 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.12-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 12: Peak-emission wavelength and spectral radiant bandwidth 半导体红外发射二极管测量方法 第12部分：峰值发射波长和光谱辐射带宽 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.1-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 1: General 半导体红外发射二极管测量方法 第1部分：总则 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.11-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 11: Response time 半导体红外发射二极管测量方法 第11部分：响应时间 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2658.10-2015 |
Measuring method for semiconductor infrared-emitting diode - Part 10: Modulation bandwidth 半导体红外发射二极管测量方法 第10部分：调制带宽 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 10414-2015 |
(The semiconductor device with solder) 半导体器件用焊料 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2215-2015 |
Measuring methods for semiconductor photocouplers 半导体光电耦合器测试方法 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 2214-2015 |
Measuring methods for semiconductor photodiode and phototransistor 半导体光电二极管和光电晶体管测试方法 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 11487-2015 |
Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer 半绝缘半导体晶片电阻率的无接触测量方法 |
China Electronics
Standards semiconductor |
English PDF |
| YY/T 0998-2015 |
semiconductor heating and/or cooling therapy equipment 半导体升降温治疗设备 |
China Medicine & Medical Device
Standards semiconductor |
English PDF |
| JC/T 2133-2012 |
Determination of impurities in silica sol for polishing solution in semiconductor industry. Inductively coupled plasma atomic emission spectrometric method 半导体抛光液用硅溶胶中杂质元素含量的测定 -电感耦合等离子体原子发射光谱法 |
China Building Materials
Standards semiconductor |
English PDF |
| JC/T 597-2011 |
Transparent quartz glass tubes for semiconductor 半导体用透明石英玻璃管 |
China Building Materials
Standards semiconductor |
English PDF |
| JC/T 181-2011 |
Transparent quartz glass devices for semiconductor 半导体用透明石英玻璃器件 |
China Building Materials
Standards semiconductor |
English PDF |
| JC/T 2064-2011 |
Transparent quartz rods for semiconductor 半导体用透明石英玻璃棒 |
China Building Materials
Standards semiconductor |
English PDF |
| YD/T 2001.2-2011 |
semiconductor optoelectronic devices for fibre optic system applications. Part 2: measuring methods 用于光纤系统的半导体光电子器件 第2部分：测试方法 |
China Telecommunication
Standards semiconductor |
English PDF |
| JJF 1236-2010 |
Calibration Specification for semiconductor Device Curve Tracers 半导体管特性图示仪校准规范 |
China Metrological
Standards semiconductor |
English PDF |
| YD/T 2001.1-2009 |
semiconductor optoelectronic devices for fibre optic system applications. Part 1: Specification template for essential rating and characteristics 用于光纤系统的半导体光电子器件 第1部分：基本特性和额定值 |
China Telecommunication
Standards semiconductor |
English PDF |
| SJ/T 11405-2009 |
semiconductor optoelectronic devices for fibre optic system applications. Part 2: Measuring methods 光纤系统用半导体光电子器件 第2部分：测量方法 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 11402-2009 |
Technical specification of semiconductor laser chip used in optical fiber communication 光纤通信用半导体激光器芯片技术规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 11401-2009 |
Series program for semiconductor light emitting diodes 半导体发光二极管产品系列型谱 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 11400-2009 |
semiconductor optoelectronic devices. Blank detail specification for lower-power light-emitting diodes 半导体光电子器件 小功率半导体发光二极管空白详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 11395-2009 |
semiconductor lighting terminology 半导体照明术语 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 11394-2009 |
Measure methods of semiconductor light emitting diodes 半导体发光二极管测试方法 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 11393-2009 |
semiconductor optoelectronic devices. Blank detail specification for power light-emitting diodes 半导体光电子器件 功率发光二极管空白详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| YD/T 1687.2-2007 |
Technical Requirements of High Speed semiconductor Laser Assembly for Optical Fiber Communication. Part 1: 2.5Gbit/s Uncooled Direct Modulation Semiconductor Laser Assembly 光通信用高速半导体激光器组件技术条件 第2部分:2.5gb/s无致冷型直接调制半导体激光器组件 |
China Telecommunication
Standards semiconductor |
English PDF |
| YD/T 1687.1-2007 |
Technical Requirements of High Speed semiconductor Laser Assembly for Optical Fiber Communication. Part 1: 2.5Gbit/s Cooled Direct Modulation Semiconductor Laser Assembly 光通信用高速半导体激光器组件技术条件 第1部分:2.5gb/s致冷型直接调制半导体激光器组件 |
China Telecommunication
Standards semiconductor |
English PDF |
| JJG(SJ)31010-2007 |
(Precision semiconductor Parameter Analyzer test procedures) |
China Metrological
Standards semiconductor |
English PDF |
| JJG 31010-2007 |
Precision semiconductor parameter analyzer VRof |
China Metrological
Standards semiconductor |
English PDF |
| SJ 20957-2006 |
General specification for large power semiconductor laser diode array 大功率半导体激光二极管阵列通用规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/63-2006 |
semiconductor integrated circuits detail specification for types JF124 and JF124A quad operational amplifiers 半导体集成电路jf124、jf124a型四运算放大器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/62-2006 |
semiconductor integrated circuits detail specification for types JF1558 and JF1558A general dual operational amplifiers 半导体集成电路jf1558、jf1558a型通用双运算放大器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 60597/63-2006 |
The semiconductor integrated circuit JF124, JF124A type four operational amplifiers detailed specification 半导体集成电路jf124、jf124a型四运算放大器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/61-2005 |
semiconductor integrated circuits detail specification for types JW1083/JW1084/JW1085/JW1086 three terminal adjustable low dropout positive voltage regulators 半导体集成电路jw1083/jw1084/jw1085/jw1086型三端可调正输出低压差电压调整器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| JJG(SJ)310003-2006 |
Specification for verification of capacitor parameter testers for semiconductor discrete devices |
China Metrological
Standards semiconductor |
English PDF |
| JJG(SJ)310002-2006 |
Specification for verification of DC parameter testers for semiconductor discrete devices |
China Metrological
Standards semiconductor |
English PDF |
| JJG 310003-2006 |
Specification for verification of capacitor parameter testers for semiconductor discrete devices |
China Metrological
Standards semiconductor |
English PDF |
| JJG 310002-2006 |
Specification for verification of DC parameter testers for semiconductor discrete devices |
China Metrological
Standards semiconductor |
English PDF |
| SJ 50597/60-2004 |
semiconductor integrated circuits Detail specification for types JW117/JW150/JW138 three terminal adjustable positive voltage reference 半导体集成电路 jw117/jw150/jw138型三端可调正输出电压调整器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/169-2004 |
semiconductor discrete devices. Detail specification for type 3DA510 silicon microwave pulse power transistor 半导体分立器件3da510型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/168-2004 |
semiconductor discrete devices. Detail specification for type 3DA509 silicon microwave pulse power transistor 半导体分立器件3da509型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/167-2004 |
semiconductor discrete devices. Detail specification for type 3DA508 silicon microwave pulse power transistor 半导体分立器件3da508型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/166-2004 |
semiconductor discrete devices. Detail specification for type 3DA507 silicon microwave pulse power transistor 半导体分立器件3da507型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/165-2003 |
semiconductor discrete device Detail specification of type PIN0003 PIN diode 半导体分立器件pin0003型pin二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/164-2003 |
semiconductor discrete devices. Detail specification for type PIN0002 PIN diode 半导体分立器件pin0002型pin二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/163-2003 |
semiconductor discrete device. Detail specification of type 3DK457 for power switching transistors 半导体分立器件3dk457型功率开关晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/162-2003 |
semiconductor discrete device. Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes 半导体分立器件2cw1022型硅双向电压调整二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 51420/3-2003 |
Detail specification of ceramic PGA for semiconductor integrated circuits 半导体集成电路陶瓷针栅阵列外壳详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/59-2003 |
semiconductor integrated circuits Detail specification for type JB523 wide-band Logarithmic amplifier 半导体集成电路 jb523型宽带对数放大器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/58-2003 |
semiconductor integrated circuits Detail specification for type JB726 limit Amplifier discriminator 半导体集成电路 jb726型限幅放大鉴频器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/57-2003 |
semiconductor integrated circuits Detail specification for type JW584/JW584A progammable voltage reference 半导体集成电路 jw584/jw584a型可编程电压基准详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20786.1-2002 |
semiconductor photoelectric assembly Detail specification for miniature duplex photoelectric localizer for type CBGS 2301 半导体光电组件.CBGS2301微型双向光电定位器.详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/161-2002 |
semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2CW210~251 半导体分立器件 2cw210-251型硅电压调整二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/160-2002 |
semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power transistor 半导体分立器件 3dg122型硅超高频小功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/159-2002 |
semiconductor discrete devices. Detail specification for type 3DG142 silicon UHF low-noise transistor 半导体分立器件 3dg142型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/158-2002 |
semiconductor discrete devices. Detail specification for type 3DG44 silicon UHF low-noise transistor 半导体分立器件 3dg44型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/157-2002 |
semiconductor discrete devices. Detail specification for type 3DA506 silicon microwave pulse power transistor 半导体分立器件 3da506型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/156-2002 |
semiconductor discrete devices. Detail specification for type 3DA505 silicon microwave pulse power transistor 半导体分立器件 3da505型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/155-2002 |
semiconductor discrete devices. Detail specification for type 3DG252 sillcon microwave linearity transistor 半导体分立器件 3dg252型硅微波线性晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/154-2002 |
semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise transistor 半导体分立器件 3dg251型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/153-2002 |
semiconductor discrete devices. Detail specification for type 2CK141 microwave switch diode 半导体分立器件 2ck141型微波开关二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/152-2002 |
semiconductor discrete devices. Detail specification for type 2CK140 microwave switch diode 半导体分立器件 2ck140型微波开关二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/151-2002 |
semiconductor discrete device. Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 半导体分立器件 2dw14-18型低噪声硅电压基准二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/150-2002 |
semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2DW230~236 半导体分立器件 2dw230-236型硅电压基准二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 53930/1-2002 |
semiconductor optoelectronic devices detail specification for type GR8813 infrared emitting diode 半导体光电子器件gr8813型红外发射二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20819-2002 |
semiconductor photoelectric assembly Detail specification for miniature duplex photoelectric localizer for type CBGS 2301 军用emi吸波元件(包括磁珠、磁环、磁筒、磁夹板等元件)通用规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/56-2002 |
semiconductor integrated circuits Detail specification for type JW920 PIN driver 半导体集成电路jw920型pin驱动器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/55-2002 |
semiconductor integrated circuits Detail specification for JSC320C25 digital signal proces 半导体集成电路jsc320c25型数字信号处理器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/54-2002 |
semiconductor integrated circuits. Detail specification for JW431 prefision adjustable voltage reference 半导体集成电路jw431精密可调电压基准源详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20644.2-2001 |
semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode 半导体光电子器件 GD101型PIN光电二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20644.1-2001 |
semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode 半导体光电子器件 GD3550Y型PIN光电二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 10805-2000 |
semiconductor interface integrated circuits General principles of measuring methods for voltage comparators 半导体集成电路电压比较器测试方法的基本原理 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20642.7-2000 |
semiconductor opto-electronic devices Detail specification for type GR1325J light emitting diode module 半导体光电器件GR1325J型长波长发光二极管组件详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/53-2000 |
semiconductor integrated circuits. Detail specification for Type JB3081, JB3082 transistor arrays 半导体集成电路jb3081、jb3082型晶体管阵列详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/52-2000 |
semiconductor integrated circuits. Detail specification for Type JB537 voltage-to-frequency converter 半导体集成电路jb537型电压频率转换器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/148-2000 |
semiconductor discrete devices. Detail specification for type 3DK35B~F power switching transistors 半导体分立器件3dk35b—f型功率开关晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/147-2000 |
semiconductor optoelectronic devices. Detail specification for type GF1121 Light-emitting diode indicate lamp 半导体光电子器件gf1121型led指示灯详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/146-2000 |
semiconductor discrete devices. Detail specification for type 3DA601 C band silicon bipolar power transistor 半导体分立器件3da601型c波段硅双极型功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/145-2000 |
semiconductor discrete devices. Detail specification for type 3DA503 silicon microwave pulse power transistor 半导体分立器件3da503型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20788-2000 |
Measurment method for thermal impedance of semiconductor diodes 半导体二极管热阻抗测试方法 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20787-2000 |
Measurment method for thermal resistance of semiconductor bridge rectifieres 半导体桥式整流器热阻测试方法 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20786-2000 |
General specification for semiconductor opto-electronic assembly 半导体光电组件总规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/51-1999 |
semiconductor integrated circuits Detail specification for types JW1846/JW1847 current-mode pulse-width modulator controller 半导体集成电路jw1846/jw1847型电流型脉冲宽度调制控制器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/144-1999 |
semiconductor discrete devices. Detail specification for types 2CW50~78 glass passivation package Silicon voltage-regulator diodes 半导体光电子器件2cw50～78型玻璃钝化封装硅电压调整二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/143-1999 |
semiconductor optoelectronic devices. Detail specification for type GF1120 red emitting diode 半导体光电子器件gf1120型红色发光二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/142-1999 |
semiconductor optoelectronic devices. Detail specification for type GF4112 green emitting diode 半导体光电子器件gf4112型绿色发光二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/141-1999 |
semiconductor discrete devices. Detail specification for type 2EK150 FaAs high speed switching diode 半导体光电子器件2ek150型砷化镓高速开关二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20758-1999 |
semiconductor integrated circuits Specification for COMS gate array devices 半导体集成电路cmos门阵列器件规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20756-1999 |
Guideline for application of structurally similarity of discrete semiconductor devices 半导体分立器件结构相似性应用指南 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20744-1999 |
General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials 半导体材料杂质含量红外吸收光谱分析通用导则 |
China Electronics
Standards semiconductor |
English PDF |
| YD/T 940-1999 |
semiconductor arrester for The over_voltage protection of telecommunications installations 通信设备过电压保护用半导体管 |
China Telecommunication
Standards semiconductor |
English PDF |
| SJ 50033/140-1999 |
semiconductor discrete devices. Detail specification for type 3DA502 silicon microwave pulse power transistor 半导体光电子器件3da502型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/139-1998 |
semiconductor optoelectronic devices. Detail specification for green light -- Emitting diode for type GF4111 半导体光电子器件gf4111型绿色发光二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/138-1998 |
semiconductor optoelectronic devices. Detail specification for yellow light -- Emitting diode for type GF318 半导体光电子器件gf318型黄色发光二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 51420/2-1998 |
Detail specification of type F ceramic FP for semiconductor integrated circuits 半导体集成电路f型陶瓷扁平外壳详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20642.6-1998 |
semiconductor opto-electronic module Detail specification for type GH83 opto-couplers 半导体光电模块GH83型光耦合器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20642.3-1998 |
semiconductor opto-electronic module Detail specification for type GD83 PIN-FET opto-receiver module 半导体光电模块GD83型PIN-FET光接收模块详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20642.2-1998 |
semiconductor opto-electronic module Detail specification for type GD82 PIN-FET opto-receiver module 半导体光电模块GD82型PIN-FET光接收模块详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20642.5-1998 |
semiconductor optoelectronic module Detail specification for type GH82 opto-couplers 半导体光电模块GH82型光耦合器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20642.4-1998 |
semiconductor optoelectronic module Detail specification for type GH81 opto-couplers 半导体光电模块GH81型光耦合器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20642.1-1998 |
semiconductor opto-electronic module Detail specification for type GD81 PIN-FET opto-receiver module 半导体光电模块GD81型DIN-FET光接收模块详细总规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/50-1997 |
semiconductor integrated cicuits Detail specification for type JT54F74 FTTL dual D positive edge-triggered flip-flops 半导体集成电路jt54f74型fttl双上升沿d触发器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/45-1997 |
semiconductor integrated circuits Detail specification for types JJ55107, JJ55108, JJ55113, JJ55114 and JJ55115 linear line drivers and receivers 半导体集成电路jj55107、jj55108、jj55113～jj55115线接收器/驱动器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/44-1997 |
semiconductor integrated circuits Detail specification for type JB42 modulator/demodulator 半导体集成电路jb42型调制解调器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/43-1997 |
semiconductor integrated circuits Detail specification for type JF36 low noise wide-band amplifier 半导体集成电路jf36型低噪声宽带放大器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/137-1997 |
semiconductor optoelectronic devices. Detail specification for orange -- Red light emitting diode for type GF216 半导体光电子器件gf216型橙色发光二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/136-1997 |
semiconductor optoelectronic devices. Detail specification for red light emitting diode for type GF116 半导体分立器件gf116型红色发光二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/135-1997 |
semiconductor discrete devices. Detail specification for type 2CZ10 silicon switching rectifier diode 半导体分立器件2cz10型硅开关整流二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/134-1997 |
semiconductor discrete devices. Detail specification for type 3DD167 low -- Frequency and high -- Power transistor 半导体分立器件3dd167型低频大功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/133-1997 |
semiconductor discrete devices. Detail specification for type SY5629-5665A tramsient voltage suppression diodes 半导体分立器件sy5629～5665a型瞬态电压抑制二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/132-1997 |
semiconductor discrete devices. Detail specification for type 3DD260 low -- Frequency and high -- Power transistor 半导体分立器件3dd260型低频大功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/131-1997 |
semiconductor discrete devices. Detail specification for type 3DD157 low -- Frequency and high -- Power transistor 半导体分立器件3dd157型低频大功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/130-1997 |
semiconductor discrete devices. Detail specification for type 3DD159 low -- Frequency and high -- Power transistor 半导体分立器件3dd159型低频大功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/129-1997 |
semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high -- Power transistor 半导体分立器件3dd155型低频大功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/128-1997 |
semiconductor discrete devices. Detail specification for type 2DK15 SCHOTTKY ailicon switching rectifier diode 半导体分立器件2dk15型硅肖特基开关整流二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/127-1997 |
semiconductor discrete devices. Detail specification for type 2DK14 SCHOTTKY ailicon switching rectifier diode 半导体分立器件2dk14型硅肖特基开关整流二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/126-1997 |
semiconductor discrete device. Detail specification for type 2DK13 SCHOTTKY ailicon switching rectifier diode 半导体分立器件2dk13型硅肖特基开关整流二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/125-1997 |
semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN11~15 半导体分立器件pin11～15型硅pin二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/124-1997 |
semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN101~105 半导体分立器件pin101～105型硅pin大功率二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/123-1997 |
semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN62317 半导体分立器件pin62317型硅pin大功率二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/122-1997 |
semiconductor discrete devices. Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3684～cs3687型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/121-1997 |
semiconductor discrete devices. Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3458～cs3460型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/120-1997 |
semiconductor discrete devices. Detail specification for type CS205 GaAs microwave power field effect transistor 半导体分立器件cs205型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/119-1997 |
semiconductor discrete devices. Detail specification for type CS204 GaAs microwave power field effect transistor 半导体分立器件cs204型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/118-1997 |
semiconductor discrete devices. Detail specification for type 2EK31 GaAs switching diode 半导体分立器件2ek31型砷化镓开关二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/117-1997 |
semiconductor discrete devices. Detail specification for type 2CK38 silicon large current switch diode 半导体分立器件2ck38型硅大电流开关二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/116-1997 |
semiconductor discrete devices. Detail specification for type 2CK29 silicon large current switch diode 半导体分立器件2ck29型硅大电流开关二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/115-1997 |
semiconductor discrete devices. Detail specification for type 2CK28 silicon large current switch diode 半导体分立器件2ck28型硅大电流开关二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 20642-1997 |
semiconductor opto-electronic module. General specification for 半导体光电模块总规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 11067-1996 |
Commonly used terms for semiconductor photoelectric materials and pyroelectricmaterials in infrared detecting materials 红外探测材料中半导体光电材料和热释电材料常用名词术语 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 51420/1-1996 |
Detail specification of type D ceramic DIP for semiconductor integrated circuits 半导体集成电路d型陶瓷双列外壳详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/42-1996 |
semiconductor integrated circuits. Detail specification for Types JW79L06, JW79L09, JW79L12, JW79L15, JW79L18 and JW79L24 three terminal fixed output negative voltage regulators 半导体集成电路 ｊｗ７９ｌ０５（０６、０９、１２、１５、１８、２４）型三端固定负输出电压调整器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/41-1996 |
semiconductor integrated circuits. Detail specification for Type JE10531 ECL dual D master-slave flip-flop 半导体集成电路 ｊｅ１０５３１型ｅｃｌ双ｄ主从触发器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/40-1996 |
semiconductor integrated circuits Detail specification for type JC54HC75, JC54HC259, JC54HC373, JC54HC533, JC54HC573 HCMOS latches. 半导体集成电路 jc54hc75、jc54hc259、jc54hc373、jc54hc533和jc54hc573型hcmos锁存器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/39-1996 |
semiconductor integrated circuits Detail specification for type JC54HC221 HCMOS dual monostable multivibrators with schmitt triggers inputs 半导体集成电路 jc54hc221型hcmos双单稳态触发器（斯密特触发输入）详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/114-1996 |
semiconductor discrete device. Detail specification for type GD3283Y position sensitive detector 半导体光电子器件 ｇｄ３２８３ｙ型位敏探测器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/113-1996 |
semiconductor discrete device. Detail specification for type GD3252Y photodiodes 半导体光电子器件 ｇｄ３２５２ｙ型光电二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/112-1996 |
semiconductor discrete device. Detail specification for type GD3251Y photodiodes 半导体光电子器件 ｇｄ３２５１ｙ型光电二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/111-1996 |
semiconductor optoelectronic devices. Detail specification for type GT16 Si.NPN phototransistor 半导体光电子器件 ｇｔ１６型硅ｎｐｎ光电晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/110-1996 |
semiconductor optoelectronic devices. Detail specification for type GR9413 infrared light emitting diode 半导体光电子器件gr9413型红外发射二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/109-1996 |
semiconductor discrete device. Detail specification for type GJ9032T and GJ9034T semiconductor laser diodes 半导体光电子器件gj9031t、gj9032t和gj9034t型 半导体激光二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/108-1996 |
semiconductor discrete device. Detail specification for Gunn diodes for type 2EY5671, 2EY5672 半导体分立器件 ２ｅｙ５６７１、２ｅｙ５６７２型体效应二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/107-1996 |
semiconductor discrete device. Detail specification for Gunn diodes for type 2EY621, 2EY622, 2EY623 半导体分立器件 ２ｅｙ６２１、２ｅｙ６２２、２ｅｙ６２３型体效应二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/106-1996 |
semiconductor discrete device. Detail specification for type CS203 GaAs microwave low noise field effect transistor 半导体分立器件 ｃｓ２０３型砷化镓微波低噪声场效应晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/105-1996 |
semiconductor discrete device Detail specification for type 3DK404 power switching transistor 半导体分立器件 ３ｄｋ４０４型功率开关晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/104-1996 |
semiconductor discrete device. Detail specification for type 3DK002 power switching transistor 半导体分立器件 ３ｄｋ００２型功率开关晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/103-1996 |
semiconductor discrete device. Detail specification for type 3DA89 high-frequency power transistor 半导体分立器件 ３ｄａ８９型高频功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ/T 10696-1996 |
semiconductor discrete device Detail specification for type QL50 in use for automotive nine diodes bridge rectifying modules 半导体分立器件 ｑｌ５０型机动车用九管桥式整流组件详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/38-1995 |
semiconductor integrated circuits. Detail specification for Type JM2148H NMOS 1024*4 bit static random access memory 半导体集成电路 ｊｍ２１４８ｈ型ｎｍｏｓ１０２４×４位静态随机存取存储器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/37-1995 |
semiconductor integrated circuits. Detail specification for Type JSC145152 CMOS parallel input phase-locked loop frequency synthesizer 半导体集成电路 ｊｓｃ１４５１５２型ｃｍｏｓ并行输入锁相环频率合成器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/36-1995 |
semiconductor integrated circuits. Detail specification for Type JC54HC08, JC54HC11, JC54HC32, JC54HC86 HCMOS gates 半导体集成电路 ｊｃ５４ｈｃ０８、ｊｃ５４ｈｃ１１、ｊｃ５４ｈｃ３２、ｊｃ５４ｈｃ８６型ｈｃｍｏｓ门电路详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/35-1995 |
semiconductor integrated circuits. Detail specification for Type JC4520 CMOS dual 4-bit binary up-counters 半导体集成电路 ｊｃ４５２０型ｃｍｏｓ双４位二进制同步计数器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/34-1995 |
semiconductor integrated circuits. Detail specification for Types JC4085, JC4086, JC4070, JC4077 CMOS gates 半导体集成电路 ｊｃ４０８５、ｊｃ４０８６、ｊｃ４０７０、ｊｃ４０７７型ｃｍｏｓ门电路详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/99-1995 |
semiconductor discrete device. Detail specification for o/G double colour light emitting diode for type GF511 半导体光电子器件 ｇｆ５１１型橙／绿双色发光二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/98-1995 |
semiconductor discrete device. Detail specification for type 2CJ4211 and 2CJ4212 step recovery diodes 半导体分立器件 ２ｃｊ４２１１、２ｃｊ４２１２型阶跃恢复二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/97-1995 |
semiconductor discrete device. Detail specification for type 2CJ4011, 2CJ4012, 2CJ4021 and 2CJ4022 step recovery diodes 半导体分立器件 ２ｃｊ４０１１、２ｃｊ４０１２、２ｃｊ４０２１、２ｃｊ４０２２型阶跃恢复二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/96-1995 |
semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 ３ｄｇ２１６型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/95-1995 |
semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/94-1995 |
semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/93-1995 |
semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50923/2-1995 |
Detail specification for types G2-01B-M1, G2-01B-Z1 metal case for semiconductor photosensitive devices ｇ２－０１ｂ－ｍ１型和ｇ２－０１ｂ－ｚ１型半导体光敏器件金属外壳详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50923/1-1995 |
Detail specification for types A6 -- 02A -- M2/Z2 and A6 -- 01B --M1/Z1 metal case for semiconductor photocouplers ａ６－０２ａ－ｍ２／ｚ２和ａ６－０１ｂ－ｍ１／ｚ１型半导体光耦合器金属外壳详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/101-1995 |
Detail specification for semiconductor laser diode modules for type GJ1325 ｇｊ１３２５型半导体激光二极管组件详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50033/100-1995 |
semiconductor discrete device. Detail specification for type 2CJ60 step recovery diodes 半导体分立器件 ２ｃｊ６０型阶跃恢复二极管详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/33-1995 |
semiconductor integrated circuits. Detail specification for Type JB200 CMOS dual SPST analog switch 半导体集成电路 ｊｂ２００型ｃｍｏｓ双路单刀单掷模拟开关详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/32-1995 |
semiconductor integrated circuits. Detail specification for Type JW4805, JW4810 and JW4812 three terminal low drop fixed output positive voltage regulators 半导体集成电路 ｊｗ４８０５、ｊｗ４８１０、ｊｗ４８１２型三端低压差固定正输出电压调整器详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| SJ 50597/31-1995 |
semiconductor integrated circuits. Detail specification for Type JC4007 CMOS dual somplementary pair plus inverter and Type JC4048 CMOS multi function expandable 8 input gate 半导体集成电路 ｊｃ４００７型ｃｍｏｓ双互补对及反相器和ｊｃ４０４８型ｃｍｏｓ８输入多功能门（可扩展）详细规范 |
China Electronics
Standards semiconductor |
English PDF |
| Find out:421Items | To Page of: First -Previous-Next -Last | 1 2 3 |
+86-755-25831330
