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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| GY/T 363-2023 |
3D sound codec and rendering {译} 三维声编解码及渲染 |
China Radio, Film and TV Industry
Standards 3D |
 English PDF |
| SJ/T 11584.6—2022 |
Information technology - Social service management - Technical specifications for 3D digital social service management system - Part 6: Assisted decision-making {译} 信息技术 社会服务管理 三维数字社会服务管理系统技术规范 第6部分：辅助决策 |
China Electronics Industry
Standards 3D |
English PDF |
| SJ/T 11548.5—2022 |
Information technology - Social service management - Technical specifications for 3D digital social service management system - Part 5: Grid management {译} 信息技术 社会服务管理 三维数字社会服务管理系统技术规范 第 5 部分：网格化管理 |
China Electronics Industry
Standards 3D |
English PDF |
| SJ/T 11548.4—2022 |
Information technology - Social service management - Technical specification for 3D digital social service management system - Part 4: Service acceptance {译} 信息技术 社会服务管理 三维数字社会服务管理系统技术规范 第 4 部分：服务受理 |
China Electronics Industry
Standards 3D |
English PDF |
| SJ/T 11584.3—2022 |
Information Technology Social Service Management Technical Specifications for 3D Digital Social Service Management System Part 3: Business Handling {译} 信息技术 社会服务管理 三维数字社会服务管理系统技术规范 第 3 部分：业务办理 |
China Electronics Industry
Standards 3D |
English PDF |
| SJ/T 11548.2—2022 |
Information technology - Social service management - Technical specification for 3D digital social service management system - Part 2: Basic database {译} 信息技术 社会服务管理 三维数字社会服务管理系统技术规范 第 2 部分：基础数据库 |
China Electronics Industry
Standards 3D |
English PDF |
| JB/T 14279-2022 |
Additive Manufacturing Material Extrusion Forming 3D Printing Pen {译} 增材制造 材料挤出成形3D打印笔 |
China Machinery Industry
Standards 3D |
English PDF |
| MZ/T 192-2022 |
A Guide to 3D Printing Technology for Custom Parts for Prosthetics and Orthotics {译} 假肢和矫形器定制件 3D打印技术指南 |
China Civil Affairs Industry
Standards 3D |
English PDF |
| YY/T 1802-2021 |
Additively manufactured medical products - Evaluation method for metal ion precipitation of 3D printed titanium alloy implants {译} 增材制造医疗产品 3D打印钛合金植入物金属离子析出评价方法 |
China Pharmaceutics Industry
Standards 3D |
English PDF |
| CH/Z 9031-2021 |
Technical specification for acquisition and processing of indoor 3D mapping data{译} {译} 室内三维测图数据获取与处理技术规程 |
China Mapping Industry
Standards 3D |
English PDF |
| JB/T 14158-2021 |
3D Cinema Laser Projection Screen Frame System{译} {译} 立体电影激光放映银幕架系统 |
China Machinery Industry
Standards 3D |
English PDF |
| JB/T 14157-2021 |
3D movie laser projection screen{译} {译} 立体电影激光放映银幕 |
China Machinery Industry
Standards 3D |
English PDF |
| NB/T 10551-2021 |
Technical specification for 3D modeling of underwater topographic survey data in coal mine subsidence area {译} 煤矿沉陷区水底地形测量数据三维建模技术规范 |
China Energy Industry
Standards 3D |
English PDF |
| SJ/T 1839-2016 |
(Semiconductor discrete device 3DK108 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk108型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ/T 1838-2016 |
(Semiconductor discrete device 3DK29 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk29型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ/T 1834-2016 |
(Semiconductor discrete device 3DK104 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk104型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ/T 1833-2016 |
(Semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk103型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ/T 1832-2016 |
(Semiconductor discrete device 3DK102 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk102型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ/T 1831-2016 |
(Semiconductor discrete device 3DK28 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk28型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ/T 1830-2016 |
(Semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk101型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ/T 1826-2016 |
(Semiconductor discrete device 3DK100 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk100型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| QB/T 4735-2014 |
Polarized 3D glasses 偏振式三维立体眼镜 |
China Light Industry
Standards 3D |
English PDF |
| FZ/T 60043-2014 |
3D braided polymer matrix composites. Test method for compression properties 树脂基三维编织复合材料 压缩性能试验方法 |
China Textile & Garment industry
Standards 3D |
English PDF |
| FZ/T 60042-2014 |
3D braided polymer matrix composites. Test method for bending properties 树脂基三维编织复合材料 弯曲性能试验方法 |
China Textile & Garment industry
Standards 3D |
English PDF |
| FZ/T 60041-2014 |
3D braided polymer matrix composites. Test method for tensile properties 树脂基三维编织复合材料 拉伸性能试验方法 |
China Textile & Garment industry
Standards 3D |
English PDF |
| SJ 50033/176-2007 |
Semiconductro discrete devices. Detail specification for type 3DA523 silicon microwave pulse power transistor 半导体分立器件 3da523型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/175-2007 |
Semiconductro discrete devices. Detail specification for type 3DA522 silicon microwave pulse power transistor 半导体分立器件 3da522型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/174-2007 |
Semiconductro discrete devices. Detail specification for type 3DA521 silicon microwave pulse power transistor 半导体分立器件 3da521型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/173-2007 |
Semiconductro discrete devices. Detail specification for type 3DA520 silicon microwave pulse power transistor 半导体分立器件 3da520型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/172-2007 |
Semiconductro discrete devices. Detail specification for type 3DA519 silicon microwave pulse power transistor 半导体分立器件 3da519型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/171-2007 |
Semiconductro discrete devices. Detail specification for type 3DA518 silicon microwave pulse power transistor 半导体分立器件 3da518型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/170-2007 |
Semiconductro discrete devices. Detail specification for type 3DA516 silicon microwave pulse power transistor 半导体分立器件 3da516型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/169-2004 |
Semiconductor discrete devices. Detail specification for type 3DA510 silicon microwave pulse power transistor 半导体分立器件3da510型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/168-2004 |
Semiconductor discrete devices. Detail specification for type 3DA509 silicon microwave pulse power transistor 半导体分立器件3da509型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/167-2004 |
Semiconductor discrete devices. Detail specification for type 3DA508 silicon microwave pulse power transistor 半导体分立器件3da508型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/166-2004 |
Semiconductor discrete devices. Detail specification for type 3DA507 silicon microwave pulse power transistor 半导体分立器件3da507型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/163-2003 |
Semiconductor discrete device. Detail specification of type 3DK457 for power switching transistors 半导体分立器件3dk457型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/160-2002 |
Semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power transistor 半导体分立器件 3dg122型硅超高频小功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/159-2002 |
Semiconductor discrete devices. Detail specification for type 3DG142 silicon UHF low-noise transistor 半导体分立器件 3dg142型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/158-2002 |
Semiconductor discrete devices. Detail specification for type 3DG44 silicon UHF low-noise transistor 半导体分立器件 3dg44型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/157-2002 |
Semiconductor discrete devices. Detail specification for type 3DA506 silicon microwave pulse power transistor 半导体分立器件 3da506型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/156-2002 |
Semiconductor discrete devices. Detail specification for type 3DA505 silicon microwave pulse power transistor 半导体分立器件 3da505型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/155-2002 |
Semiconductor discrete devices. Detail specification for type 3DG252 sillcon microwave linearity transistor 半导体分立器件 3dg252型硅微波线性晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/154-2002 |
Semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise transistor 半导体分立器件 3dg251型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/148-2000 |
Semiconductor discrete devices. Detail specification for type 3DK35B~F power switching transistors 半导体分立器件3dk35b—f型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/146-2000 |
Semiconductor discrete devices. Detail specification for type 3DA601 C band silicon bipolar power transistor 半导体分立器件3da601型c波段硅双极型功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/145-2000 |
Semiconductor discrete devices. Detail specification for type 3DA503 silicon microwave pulse power transistor 半导体分立器件3da503型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ/T 11227-2000 |
Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 电子元器件详细规范 3da98型npn硅高频大功率晶体管 |
China Electronics
Standards 3D |
English PDF |
| SJ/T 11226-2000 |
Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor 电子元器件详细规范 3da505型l波段硅脉冲功率晶体管 |
China Electronics
Standards 3D |
English PDF |
| SJ/T 11225-2000 |
Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor 电子元器件详细规范 3da504型s波段硅脉冲功率晶体管 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/140-1999 |
Semiconductor discrete devices. Detail specification for type 3DA502 silicon microwave pulse power transistor 半导体光电子器件3da502型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/134-1997 |
Semiconductor discrete devices. Detail specification for type 3DD167 low -- Frequency and high -- Power transistor 半导体分立器件3dd167型低频大功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/132-1997 |
Semiconductor discrete devices. Detail specification for type 3DD260 low -- Frequency and high -- Power transistor 半导体分立器件3dd260型低频大功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/131-1997 |
Semiconductor discrete devices. Detail specification for type 3DD157 low -- Frequency and high -- Power transistor 半导体分立器件3dd157型低频大功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/130-1997 |
Semiconductor discrete devices. Detail specification for type 3DD159 low -- Frequency and high -- Power transistor 半导体分立器件3dd159型低频大功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/129-1997 |
Semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high -- Power transistor 半导体分立器件3dd155型低频大功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/105-1996 |
Semiconductor discrete device Detail specification for type 3DK404 power switching transistor 半导体分立器件 ３ｄｋ４０４型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/104-1996 |
Semiconductor discrete device. Detail specification for type 3DK002 power switching transistor 半导体分立器件 ３ｄｋ００２型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/103-1996 |
Semiconductor discrete device. Detail specification for type 3DA89 high-frequency power transistor 半导体分立器件 ３ｄａ８９型高频功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 ３ｄｇ２１６型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/90-1995 |
Semiconductor discrete device. Detail specification for type 3DK106 NPN silicon low -- Power switching transistor 半导体分立器件 ３ｄｋ１０６型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/82-1995 |
Semiconductor discrete device. Detail specification for type 3DK100 NPN silicon low-power switching transistor 半导体分立器件 ３ｄｋ１００型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/77-1995 |
Semiconductor discrete devices. Detail specification for type 3DA331 Silicon microwave power tansistor 半导体分立器件 ３ｄａ３３１型硅微波功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/76-1995 |
Semiconductor discrete devices. Detail specification for type 3DG218 Silicon microwave low-noise tansistor 半导体分立器件 ３ｄｇ２１８型硅微波低噪声晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor 半导体分立器件 ３ｄｇ１３５型硅超高频小功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/74-1995 |
Semiconductor discrete device. Detail specification for type 3DA325 silicon microwave power tansistor 半导体分立器件 ３ｄａ３２５型硅微波功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/65-1995 |
Semiconductor discrete device. Detail specification for type 3DD175 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１７５型低频大功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/62-1995 |
Semiconductor discrete device Detail specification for type 3DK406 high. Voltage and power switching transistor 半导体分立器件 ３ｄｋ４０６型高压功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/61-1995 |
Semiconductor discrete device. Detail specification for type 3DK6547 high. Voltage and power switching transistor 半导体分立器件 ３ｄｋ６５４７型高压功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/60-1995 |
Semiconductor discrete device. Detail specification for type 3DK40 power switching transistor 半导体分立器件 ３ｄｋ４０型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/59-1995 |
Semiconductor discrete device. Detail specification for type 3DK39 power switching transistor 半导体分立器件 ３ｄｋ３９型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/9-1994 |
Discrete semiconductor devices Detailed specifications for 3DK206 power switching transistors 半导体分立器件 ３ｄｋ２０６型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/8-1994 |
Discrete semiconductor devices Detailed specifications for 3DK12 power switching transistors 半导体分立器件 ３ｄｋ２０５型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/37-1994 |
Semiconductor discrete device. Detail specification for type 3DD164 power transistor 半导体分立器件 ３ｄｄ１６４型功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/32-1994 |
Semiconductor discrete device. Detail specification for type 3DK312 power switching transistor 半导体分立器件 ３ｄｋ３１２型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/30-1994 |
Semiconductor discrete device. Detail specification for type 3DD155 power transistor 半导体分立器件 ３ｄｄ１５５型功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/24-1994 |
Discrete semiconductor devices Detailed specifications for 3DK310 power switching transistors 半导体分立器件 ３ｄｋ３１０型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/23-1994 |
Discrete semiconductor devices Detailed specifications for 3DK309 power switching transistors 半导体分立器件 ３ｄｋ３０９型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/17-1994 |
Discrete semiconductor devices Detailed specifications for 3DK308 power switching transistors 半导体分立器件 ３ｄｋ３０８型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/16-1994 |
Discrete semiconductor devices Detailed specifications for 3DK307 power switching transistors 半导体分立器件 ３ｄｋ３０７型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/15-1994 |
Discrete semiconductor devices Detailed specifications for 3DK306 power switching transistors 半导体分立器件 ３ｄｋ３０６型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/14-1994 |
Discrete semiconductor devices Detailed specifications for 3DK305 power switching transistors 半导体分立器件 ３ｄｋ３０５型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/13-1994 |
Discrete semiconductor devices Detailed specifications for 3DK210 power switching transistors 半导体分立器件 ３ｄｋ２１０型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/12-1994 |
Discrete semiconductor devices Detailed specifications for 3DK209 power switching transistors 半导体分立器件 ３ｄｋ２０９型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/1-1994 |
Semiconductor discrete device. Detail specification for type 3DA150 high frequency and power transistor 半导体分立器件 ３ｄａ１５０型高频功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/11-1994 |
Discrete semiconductor devices Detailed specifications for 3DK208 power switching transistors 半导体分立器件 ３ｄｋ２０８型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 50033/10-1994 |
Discrete semiconductor devices Detailed specifications for 3DK207 power switching transistors 半导体分立器件 ３ｄｋ２０７型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20466-1994 |
3DB slot hybrid of Aluminum waveguide Type BQF-100-1 ｂｑｆ－１００－１型铝波导３ｄｂ裂缝电桥 |
China Electronics
Standards 3D |
English PDF |
| SJ 20465-1994 |
3DB slot hybrid of aluminum waveguide type BQF-100-1 ｂｚｓ－１００－１型铝波导正交模耦合器 |
China Electronics
Standards 3D |
English PDF |
| SJ 20310-1993 |
Detail specification for types 3DD101 power transistor 半导体分立器件 ３ｄｄ１０１型功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20309-1993 |
Detail specification for types 3DK10 power Darlington transistor 半导体分立器件 ３ｄｋ１０型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20183-1992 |
Semiconductor discrete device Detail specification for type 3DD6 power transistor 半导体分立器件 ３ｄｄ６型功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 半导体分立器件 ３ｄｇ３４３９型和３ｄｇ３４４０型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 ３ｄｇ９１８型ｎｐｎ硅超高频小功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20174-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A 半导体分立器件 ３ｄｋ２２２１（２２２１ａ、２２２２、２２２２ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20173-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A 半导体分立器件 ３ｄｋ２２１８（２２１８ａ、２２１９、２２１９ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20172-1992 |
Semiconductor discrete device Detail specification for type 3DK38 power swithing transistor 半导体分立器件 ３ｄｋ３８型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20171-1992 |
Semiconductor discrete device Detail specification for type 3DK51 power switching transistor 半导体分立器件 ３ｄｋ５１型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20170-1992 |
Semiconductor discrete device Detail specification for type 3DK37 power switching transistor 半导体分立器件 ３ｄｋ３７型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20169-1992 |
Semiconductor discrete device Detail specification for type 3DK36 power switching transistor 半导体分立器件 ３ｄｋ３６型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20168-1992 |
Semiconductor discrete device Detail specification for type 3DK12 power switching transistor 半导体分立器件 ３ｄｋ１２型功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 半导体分立器件 ３ｄｇ２１３型ｎｐｎ硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 半导体分立器件 ３ｄｇ２１０型ｎｐｎ硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 ３ｄｇ１２０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 ３ｄｇ１１１型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20058-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK105 半导体分立器件 ３ｄｋ１０５型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20057-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK104 半导体分立器件 ３ｄｋ１０４型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20056-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK103 半导体分立器件 ３ｄｋ１０３型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20055-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK102 半导体分立器件 ３ｄｋ１０２型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20054-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK101 半导体分立器件 ３ｄｋ１０１型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20016-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１８２型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
| SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１３０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards 3D |
English PDF |
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