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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ 50033/152-2002 |
Semiconductor discrete devices. Detail specification for type 2CK140 microwave switch diode 半导体分立器件 2ck140型微波开关二极管详细规范 |
China Electronics
Standards Device specific |
 English PDF |
| SJ 50033/151-2002 |
Semiconductor discrete device. Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 半导体分立器件 2dw14-18型低噪声硅电压基准二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/150-2002 |
Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2DW230~236 半导体分立器件 2dw230-236型硅电压基准二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 53930/1-2002 |
Semiconductor optoelectronic devices detail specification for type GR8813 infrared emitting diode 半导体光电子器件gr8813型红外发射二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| TB/T 3057-2002 |
Specification of alarm device for monitoring locomotive bearing temperature 机车轴承温度监测报警装置技术条件 |
China Railway & Train
Standards Device specific |
English PDF |
| SJ/T 11248-2001 |
Liquid crystal and solid-state display devices. Part 3-1:Liquid crystal display (LCD) cells-Blank detail specification 液晶和固态显示器件 第3-1部分：液晶显示(lcd)屏空白详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20644.2-2001 |
Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode 半导体光电子器件 GD101型PIN光电二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20644.1-2001 |
Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode 半导体光电子器件 GD3550Y型PIN光电二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| YD/T 1117-2001 |
Specification of all Optical Fiber Branching Devices 全光纤型分支器件技术条件 |
China Telecommunication
Standards Device specific |
English PDF |
| SJ/T 11230-2001 |
General specification for integrated circuit cards. Part 4: Interface device fundamental API specification 集成电路卡通用规范 第4部分：接口设备基本应用编程接口规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ/T 11229-2001 |
Chinese API specification for hand-hold personal information processing devices 手持式个人信息处理设备中文应用程序接口规范 |
China Electronics
Standards Device specific |
English PDF |
| SY/T 6492-2000 |
Specification for acoustic logging calibration device 声速测井仪器刻度装置技术规范 |
China Oil & Gas Industry
Standards Device specific |
English PDF |
| SJ 20642.7-2000 |
Semiconductor opto-electronic devices Detail specification for type GR1325J light emitting diode module 半导体光电器件GR1325J型长波长发光二极管组件详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/149-2000 |
Semiconductr discrete devices. Detail specification for type 2CW100~121 glass passivation package sillcon voltage-requlator diodes 半导体分立器件2cw100—121型玻璃钝化封装硅电压调整二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/148-2000 |
Semiconductor discrete devices. Detail specification for type 3DK35B~F power switching transistors 半导体分立器件3dk35b—f型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/147-2000 |
Semiconductor optoelectronic devices. Detail specification for type GF1121 Light-emitting diode indicate lamp 半导体光电子器件gf1121型led指示灯详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/146-2000 |
Semiconductor discrete devices. Detail specification for type 3DA601 C band silicon bipolar power transistor 半导体分立器件3da601型c波段硅双极型功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/145-2000 |
Semiconductor discrete devices. Detail specification for type 3DA503 silicon microwave pulse power transistor 半导体分立器件3da503型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/144-1999 |
Semiconductor discrete devices. Detail specification for types 2CW50~78 glass passivation package Silicon voltage-regulator diodes 半导体光电子器件2cw50～78型玻璃钝化封装硅电压调整二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/143-1999 |
Semiconductor optoelectronic devices. Detail specification for type GF1120 red emitting diode 半导体光电子器件gf1120型红色发光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/142-1999 |
Semiconductor optoelectronic devices. Detail specification for type GF4112 green emitting diode 半导体光电子器件gf4112型绿色发光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/141-1999 |
Semiconductor discrete devices. Detail specification for type 2EK150 FaAs high speed switching diode 半导体光电子器件2ek150型砷化镓高速开关二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20758-1999 |
Semiconductor integrated circuits Specification for COMS gate array devices 半导体集成电路cmos门阵列器件规范 |
China Electronics
Standards Device specific |
English PDF |
| DL/T 672-1999 |
Ordering specification for controlling device of adjusting voltage and reactive power in substation 变电所电压无功调节控制装置订货技术条件 |
China Electricity & Power
Standards Device specific |
English PDF |
| SJ 50033/140-1999 |
Semiconductor discrete devices. Detail specification for type 3DA502 silicon microwave pulse power transistor 半导体光电子器件3da502型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| YY 91055-1999 |
Paint coating for medical devices. Classification and specification |
China Medicine & Medical Device
Standards Device specific |
English PDF |
| SJ 50033/139-1998 |
Semiconductor optoelectronic devices. Detail specification for green light -- Emitting diode for type GF4111 半导体光电子器件gf4111型绿色发光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/138-1998 |
Semiconductor optoelectronic devices. Detail specification for yellow light -- Emitting diode for type GF318 半导体光电子器件gf318型黄色发光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ/T 11152-1998 |
Blank detail specification for a.c. powder electro luminescent display devices 交流粉末电致发光显示器件空白详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/137-1997 |
Semiconductor optoelectronic devices. Detail specification for orange -- Red light emitting diode for type GF216 半导体光电子器件gf216型橙色发光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/136-1997 |
Semiconductor optoelectronic devices. Detail specification for red light emitting diode for type GF116 半导体分立器件gf116型红色发光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/135-1997 |
Semiconductor discrete devices. Detail specification for type 2CZ10 silicon switching rectifier diode 半导体分立器件2cz10型硅开关整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/134-1997 |
Semiconductor discrete devices. Detail specification for type 3DD167 low -- Frequency and high -- Power transistor 半导体分立器件3dd167型低频大功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/133-1997 |
Semiconductor discrete devices. Detail specification for type SY5629-5665A tramsient voltage suppression diodes 半导体分立器件sy5629～5665a型瞬态电压抑制二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/132-1997 |
Semiconductor discrete devices. Detail specification for type 3DD260 low -- Frequency and high -- Power transistor 半导体分立器件3dd260型低频大功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/131-1997 |
Semiconductor discrete devices. Detail specification for type 3DD157 low -- Frequency and high -- Power transistor 半导体分立器件3dd157型低频大功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/130-1997 |
Semiconductor discrete devices. Detail specification for type 3DD159 low -- Frequency and high -- Power transistor 半导体分立器件3dd159型低频大功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/129-1997 |
Semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high -- Power transistor 半导体分立器件3dd155型低频大功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/128-1997 |
Semiconductor discrete devices. Detail specification for type 2DK15 SCHOTTKY ailicon switching rectifier diode 半导体分立器件2dk15型硅肖特基开关整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/127-1997 |
Semiconductor discrete devices. Detail specification for type 2DK14 SCHOTTKY ailicon switching rectifier diode 半导体分立器件2dk14型硅肖特基开关整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/126-1997 |
Semiconductor discrete device. Detail specification for type 2DK13 SCHOTTKY ailicon switching rectifier diode 半导体分立器件2dk13型硅肖特基开关整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/125-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN11~15 半导体分立器件pin11～15型硅pin二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/124-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN101~105 半导体分立器件pin101～105型硅pin大功率二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/123-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN62317 半导体分立器件pin62317型硅pin大功率二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/122-1997 |
Semiconductor discrete devices. Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3684～cs3687型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/121-1997 |
Semiconductor discrete devices. Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3458～cs3460型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/120-1997 |
Semiconductor discrete devices. Detail specification for type CS205 GaAs microwave power field effect transistor 半导体分立器件cs205型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/119-1997 |
Semiconductor discrete devices. Detail specification for type CS204 GaAs microwave power field effect transistor 半导体分立器件cs204型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/118-1997 |
Semiconductor discrete devices. Detail specification for type 2EK31 GaAs switching diode 半导体分立器件2ek31型砷化镓开关二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/117-1997 |
Semiconductor discrete devices. Detail specification for type 2CK38 silicon large current switch diode 半导体分立器件2ck38型硅大电流开关二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/116-1997 |
Semiconductor discrete devices. Detail specification for type 2CK29 silicon large current switch diode 半导体分立器件2ck29型硅大电流开关二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/115-1997 |
Semiconductor discrete devices. Detail specification for type 2CK28 silicon large current switch diode 半导体分立器件2ck28型硅大电流开关二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20477.3-1997 |
Detail specification for type DP-12 640×400 line a. c. plasma display device DP-12型640×400线交流等离子体显示器件详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20477.2-1997 |
Detail specification for type DP-10 512×512 line a. c. plasma display device DP-10型512×512线交流等离子体显示器件详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20477.5-1997 |
Detail specification for type DP-14 768×512 line a. c. plasma display device DP-14型768×512线交流等离子体显示器件详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20477.4-1997 |
Detail specification for type DP-13 640×480 line a. c. plasma display device DP-13型640×480线交流等离子体显示器件详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ/T 11091-1996 |
General specification for lead-tinned for electronic components and devices 电子器件用镀锡圆引线通用技术条件 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/114-1996 |
Semiconductor discrete device. Detail specification for type GD3283Y position sensitive detector 半导体光电子器件 ｇｄ３２８３ｙ型位敏探测器详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/113-1996 |
Semiconductor discrete device. Detail specification for type GD3252Y photodiodes 半导体光电子器件 ｇｄ３２５２ｙ型光电二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/112-1996 |
Semiconductor discrete device. Detail specification for type GD3251Y photodiodes 半导体光电子器件 ｇｄ３２５１ｙ型光电二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/111-1996 |
Semiconductor optoelectronic devices. Detail specification for type GT16 Si.NPN phototransistor 半导体光电子器件 ｇｔ１６型硅ｎｐｎ光电晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/110-1996 |
Semiconductor optoelectronic devices. Detail specification for type GR9413 infrared light emitting diode 半导体光电子器件gr9413型红外发射二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/109-1996 |
Semiconductor discrete device. Detail specification for type GJ9032T and GJ9034T semiconductor laser diodes 半导体光电子器件gj9031t、gj9032t和gj9034t型 半导体激光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/108-1996 |
Semiconductor discrete device. Detail specification for Gunn diodes for type 2EY5671, 2EY5672 半导体分立器件 ２ｅｙ５６７１、２ｅｙ５６７２型体效应二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/107-1996 |
Semiconductor discrete device. Detail specification for Gunn diodes for type 2EY621, 2EY622, 2EY623 半导体分立器件 ２ｅｙ６２１、２ｅｙ６２２、２ｅｙ６２３型体效应二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/106-1996 |
Semiconductor discrete device. Detail specification for type CS203 GaAs microwave low noise field effect transistor 半导体分立器件 ｃｓ２０３型砷化镓微波低噪声场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/105-1996 |
Semiconductor discrete device Detail specification for type 3DK404 power switching transistor 半导体分立器件 ３ｄｋ４０４型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/104-1996 |
Semiconductor discrete device. Detail specification for type 3DK002 power switching transistor 半导体分立器件 ３ｄｋ００２型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/103-1996 |
Semiconductor discrete device. Detail specification for type 3DA89 high-frequency power transistor 半导体分立器件 ３ｄａ８９型高频功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20614-1996 |
General specification for a.c. thin film electroluminescent matrix display devices 交流薄膜电致发光矩阵显示器件总规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20605-1996 |
Specification for lithium tantalate single crystal used in SAW devices 声表面波（ｓａｗ）器件用钽酸锂单晶规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20590-1996 |
General specification for lifting devices of military shelter 军用微型计算机热设计技术要求 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20477.1-1996 |
Detail specification for type DP-9 512×256 line a. c. plasma display devices dp-9型512x256线交流等离子体显示器件详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ/T 10696-1996 |
Semiconductor discrete device Detail specification for type QL50 in use for automotive nine diodes bridge rectifying modules 半导体分立器件 ｑｌ５０型机动车用九管桥式整流组件详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/99-1995 |
Semiconductor discrete device. Detail specification for o/G double colour light emitting diode for type GF511 半导体光电子器件 ｇｆ５１１型橙／绿双色发光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/98-1995 |
Semiconductor discrete device. Detail specification for type 2CJ4211 and 2CJ4212 step recovery diodes 半导体分立器件 ２ｃｊ４２１１、２ｃｊ４２１２型阶跃恢复二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/97-1995 |
Semiconductor discrete device. Detail specification for type 2CJ4011, 2CJ4012, 2CJ4021 and 2CJ4022 step recovery diodes 半导体分立器件 ２ｃｊ４０１１、２ｃｊ４０１２、２ｃｊ４０２１、２ｃｊ４０２２型阶跃恢复二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 ３ｄｇ２１６型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50923/2-1995 |
Detail specification for types G2-01B-M1, G2-01B-Z1 metal case for semiconductor photosensitive devices ｇ２－０１ｂ－ｍ１型和ｇ２－０１ｂ－ｚ１型半导体光敏器件金属外壳详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/100-1995 |
Semiconductor discrete device. Detail specification for type 2CJ60 step recovery diodes 半导体分立器件 ２ｃｊ６０型阶跃恢复二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/92-1995 |
Semiconductor discrete device. Detail specification for type 3CD100 low-frequency and high-power transistor 半导体分立器件 ３ｃｄ１００型低频大功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/91-1995 |
Semiconductor discrete device. Detail specification for type 3CD030 low-fyequency and high-power transistor 半导体分立器件 ３ｃｄ０３０型低频大功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/90-1995 |
Semiconductor discrete device. Detail specification for type 3DK106 NPN silicon low -- Power switching transistor 半导体分立器件 ３ｄｋ１０６型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/89-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ６７６8and ＣＳ６７70 silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ６７６８和ｃｓ６７７０型硅ｎ沟道增强型场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/88-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ６７６０and ＣＳ６７６２ silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ６７６０和ｃｓ６７６２型硅ｎ沟道增强型场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/87-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ４０９１~ＣＳ４０９３ silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ４０９１～ｃｓ４０９３型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/86-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ５１１４~ＣＳ５１１６ silicon P-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ５１１４～ｃｓ５１１６型硅ｐ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/85-1995 |
Semiconductor discrete device. Detail specification for type CS141 silicon N-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１４１型硅ｎ沟道ｍｏｓ耗尽型场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/84-1995 |
Semiconductor discrete device. Detail specification for type CS140 silicon N-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１４０型硅ｎ沟道ｍｏｓ耗尽型场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/83-1995 |
Semiconductor discrete device. Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１３９型硅ｐ沟道ｍｏｓ增强型场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/82-1995 |
Semiconductor discrete device. Detail specification for type 3DK100 NPN silicon low-power switching transistor 半导体分立器件 ３ｄｋ１００型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/81-1995 |
Semiconductor discrete devices. Detail specification for type CS0524 GaAs microwave FET 半导体分立器件 ｃｓ０５２４型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/80-1995 |
Semiconductor discrete devices. Detail specification for type CS0513 GaAs microwave FET 半导体分立器件 ｃｓ０５１３型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/79-1995 |
Semiconductor discrete devices. Detail specification for type CS0536 GaAs microwave power FET 半导体分立器件 ｃｓ０５３６型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/78-1995 |
Semiconductor discrete devices. Detail specification for type CS0464 GaAs microwave FET 半导体分立器件 ｃｓ０４６４型砷化镓微波场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/77-1995 |
Semiconductor discrete devices. Detail specification for type 3DA331 Silicon microwave power tansistor 半导体分立器件 ３ｄａ３３１型硅微波功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/76-1995 |
Semiconductor discrete devices. Detail specification for type 3DG218 Silicon microwave low-noise tansistor 半导体分立器件 ３ｄｇ２１８型硅微波低噪声晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor 半导体分立器件 ３ｄｇ１３５型硅超高频小功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/74-1995 |
Semiconductor discrete device. Detail specification for type 3DA325 silicon microwave power tansistor 半导体分立器件 ３ｄａ３２５型硅微波功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/73-1995 |
Semiconductor discrete device. Detail specification for type QL74 silicon single phase bridge rectifier 半导体分立器件 ｑｌ７４型硅单相桥式整流器详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/72-1995 |
Semiconductor discrete device. Detail specification for type PIN323 series for PIN diode 半导体分立器件 ｐｉｎ３２３型ｐｉｎ二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/71-1995 |
Semiconductor discrete device Detail specification for type PIN342 series for PIN diode 半导体分立器件 ｐｉｎ３４２型ｐｉｎ二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/70-1995 |
Semiconductor discrete device. Detail specification for type PIN35 series for PIN diode 半导体分立器件 ｐｉｎ３５系列ｐｉｎ二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/69-1995 |
Semiconductor discrete device. Detail specification for type PIN 30 series for PIN diode 半导体分立器件 ｐｉｎ３０系列ｐｉｎ二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/68-1995 |
Semiconductor discrete device. Detail specification for type BT51 NPN silicon small power difference matchen -- Pair transistor 半导体分立器件 ｂｔ５１型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20518-1995 |
Specification for Ta2O5 films for use in piezoelectric devices 压电器件用五氧化二钽薄膜规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20477-1995 |
General specification for AC Plasma display devices 交流等离子体显示器件总规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/67-1995 |
Semiconductor discrete device. Detail specification for type 3CD103 High. Voltage low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１０３型高压低频大功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/66-1995 |
Semiconductor discrete device. Detail specification for type 3CD880 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ８８０型低频大功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/65-1995 |
Semiconductor discrete device. Detail specification for type 3DD175 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１７５型低频大功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/64-1995 |
Semiconductor discrete device. Detail specification for type 3CD010 Low. Frequency and high. Power transistor 半导体分立器件 ３ｃｄ０１０型低频大功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/63-1995 |
Semiconductor discrete device. Detail specification for type 3CD020 Low. Frequency and high. Power transistor 半导体分立器件 ３ｃｄ０２０型低频大功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/62-1995 |
Semiconductor discrete device Detail specification for type 3DK406 high. Voltage and power switching transistor 半导体分立器件 ３ｄｋ４０６型高压功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/61-1995 |
Semiconductor discrete device. Detail specification for type 3DK6547 high. Voltage and power switching transistor 半导体分立器件 ３ｄｋ６５４７型高压功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/60-1995 |
Semiconductor discrete device. Detail specification for type 3DK40 power switching transistor 半导体分立器件 ３ｄｋ４０型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/59-1995 |
Semiconductor discrete device. Detail specification for type 3DK39 power switching transistor 半导体分立器件 ３ｄｋ３９型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/58-1995 |
Semiconductor optoelectronic device. Detail specification for green light emitting diode for type GF413 半导体光电子器件 ｇｆ４１３型绿色发光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/57-1995 |
Semiconductor optoelectronic device. Detail specification for red light emitting diode for type GF115 半导体光电子器件 ｇｆ115型红色发光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/9-1994 |
Discrete semiconductor devices Detailed specifications for 3DK206 power switching transistors 半导体分立器件 ３ｄｋ２０６型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/8-1994 |
Discrete semiconductor devices Detailed specifications for 3DK12 power switching transistors 半导体分立器件 ３ｄｋ２０５型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/6-1994 |
Semiconductor discrete device. Detail specification for semiconductor light green emitting diodes for type GF 411 of GP and GT classes 半导体分立器件 ｇｐ和ｇｔ级ｇｆ４１１型半导体绿色发光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/5-1994 |
Semiconductor discrete device. Detail specification for semiconductor yellow light emmitting diodes for type GF311 of GP and GT classes 半导体分立器件 ｇｐ和ｇｔ级ｇｆ３１１型半导体黄色发光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/42-1994 |
Semiconductor discrete device. Detail specification for type CS0467 GaAs microwave FET 半导体分立器件 ｃｓ０４６７型砷化镓微波场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/4-1994 |
Semiconductor discrete device. Detail specification for semiconductor red light emitting diodes for type GF 111 of GP and GT classes 半导体分立器件 ｇｐ和ｇｔ级ｇｆ１１１型半导体红色发光二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/39-1994 |
Semiconductor discrete device. Detail specification for type 2CZ106 silicon switching rectifier diode 半导体分立器件 ２ｃｚ１０６型开关整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/38-1994 |
Semiconductor discrete device. Detail specification for type CS4856~CS4861 silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ４８５６～ｃｓ４８６１型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/37-1994 |
Semiconductor discrete device. Detail specification for type 3DD164 power transistor 半导体分立器件 ３ｄｄ１６４型功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/36-1994 |
Semiconductor discrete device. Detail specification for type 3CD050 power transistor 半导体分立器件 ３ｃｄ０５０型功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/34-1994 |
Semiconductor discrete device. Detail specification for type FH129 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１２９型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/33-1994 |
Semiconductor discrete device. Detail specification for type FH121 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１２１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/32-1994 |
Semiconductor discrete device. Detail specification for type 3DK312 power switching transistor 半导体分立器件 ３ｄｋ３１２型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/3-1994 |
Semiconductor discrete device. Detail specification for semiconductor opto-couplers for type GH21, GH22 and GH23 of GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｇｈ２１、ｇｈ２２和ｇｈ２３型半导体光耦合器详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/31-1994 |
Semiconductor discrete device. Detail specification for type FH101 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１０１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/30-1994 |
Semiconductor discrete device. Detail specification for type 3DD155 power transistor 半导体分立器件 ３ｄｄ１５５型功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/29-1994 |
Semiconductor discrete device. Detail specification for GaAs high-speed switching assembly for type EK20 半导体分立器件 ｅｋ２０型砷化镓高速开关组件详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/28-1994 |
Semiconductor discrete device. Detail specification stripline mixer diodes for 2CV334, 2CV3338 半导体分立器件 ２ｃｖ３３４、２ｃｖ３３３８型微带混频二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/27-1994 |
Semiconductor discrete device. Detail specification for GaAs varactor diodes for 2EC600 series 半导体分立器件 ２ｅｃ６００系列砷化镓变容二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/26-1994 |
Semiconductor discrete device. Detail specification for type 2CW1006~2CW1015 silicon voltage -- Regulator diode 半导体分立器件 ２ｃｗ１００６～２ｃｗ１０１５型硅电压调整二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/25-1994 |
Semiconductor discrete device. Detail specification for type 2CW1001~2CW1005 silicon voltage -- Regulator diode 半导体分立器件 ２ｃｗ１００１～２ｃｗ１００５型硅电压调整二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/24-1994 |
Discrete semiconductor devices Detailed specifications for 3DK310 power switching transistors 半导体分立器件 ３ｄｋ３１０型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/23-1994 |
Discrete semiconductor devices Detailed specifications for 3DK309 power switching transistors 半导体分立器件 ３ｄｋ３０９型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/22-1994 |
Semiconductor discrete device. Detail specification for silicon tuning varactor diode for type 2CC51E 半导体分立器件 ２ｃｃ５１ｅ型硅电调变容二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/2-1994 |
Semiconductor discret device. Detail specification for type 3CK2904, 3CK2904A, 3CK2905 and 3CK2905A PNP silicon cow-power switching transistor 半导体分立器件 ３ｃｋ２９０４（２９０４ａ、２９０５和２９０５ａ）型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/21-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ75 半导体分立器件 ２ｃｚ７５型硅开关整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/20-1994 |
Semiconductor discrete device. Detail specification for silicon rectifier diode for type 2CZ101 半导体分立器件 ２ｃｚ１０１型硅开关整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/19-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ74 半导体分立器件 ２ｃｚ７４型硅开关整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/18-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ73 半导体分立器件 ２ｃｚ７３型硅开关整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/17-1994 |
Discrete semiconductor devices Detailed specifications for 3DK308 power switching transistors 半导体分立器件 ３ｄｋ３０８型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/16-1994 |
Discrete semiconductor devices Detailed specifications for 3DK307 power switching transistors 半导体分立器件 ３ｄｋ３０７型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/15-1994 |
Discrete semiconductor devices Detailed specifications for 3DK306 power switching transistors 半导体分立器件 ３ｄｋ３０６型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/14-1994 |
Discrete semiconductor devices Detailed specifications for 3DK305 power switching transistors 半导体分立器件 ３ｄｋ３０５型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/13-1994 |
Discrete semiconductor devices Detailed specifications for 3DK210 power switching transistors 半导体分立器件 ３ｄｋ２１０型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/12-1994 |
Discrete semiconductor devices Detailed specifications for 3DK209 power switching transistors 半导体分立器件 ３ｄｋ２０９型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/1-1994 |
Semiconductor discrete device. Detail specification for type 3DA150 high frequency and power transistor 半导体分立器件 ３ｄａ１５０型高频功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/11-1994 |
Discrete semiconductor devices Detailed specifications for 3DK208 power switching transistors 半导体分立器件 ３ｄｋ２０８型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033/10-1994 |
Discrete semiconductor devices Detailed specifications for 3DK207 power switching transistors 半导体分立器件 ３ｄｋ２０７型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.56-1994 |
Semiconductor discrete device. Detail specification for type 2CK85 silicon switching diode 半导体分立器件 ２ｃｋ８５型硅开关二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.55-1994 |
Semiconductor discrete device. Detail specification for type 2CK82 silicon switching diode 半导体分立器件 ２ｃｋ８２型硅开关二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.54-1994 |
Semiconductor discrete device. Detail specification for type CS0532 GaAs microwave Power field effect transistor 半导体分立器件 ｃｓ０５３２型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.53-1994 |
Semiconductor discrete device. Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor 半导体分立器件 ｃｓ０５３０、ｃｓ０５３１型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.52-1994 |
Semiconductor discrete device. Detail specification for type CS0529 GaAs microwave Power field effect transistor 半导体分立器件 ｃｓ０５２９型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.51-1994 |
Semiconductor discrete devices. Detail specification for type CS0558 GaAs microwave dual gate FET 半导体分立器件 ｃｓ０５５８型砷化镓微波双栅场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.50-1994 |
Semiconductor discrete device. Detail specification for type QL73 silicon three phase full wave bridge rectifier 半导体分立器件 ｑｌ７３型硅三相桥式整流器详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.49-1994 |
Semiconductor discrete device. Detail specification for step recovery diodes for 2CJ4220 series 半导体分立器件 ２ｃｊ４２２０系列阶跃二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.48-1994 |
Semiconductor discrete device. Detail specification for type 2DV8CP silicon microwave detector diode 半导体分立器件 ２ｄｖ８ｃｐ型硅微波检波二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.47-1994 |
Semiconductor discrete device. Detail specification for type 2CZ117 silicon rectifier diode 半导体分立器件 ２ｃｚ１１７型硅整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.46-1994 |
Semiconductor discrete device. Detail specification for type 2CZ59 silicon rectifier diode 半导体分立器件 ２ｃｚ５９型硅整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.45-1994 |
Semiconductor discrete device. Detail specification for type 2CZ58 silicon rectifier diode 半导体分立器件 ２ｃｚ５８型硅整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.44-1994 |
Semiconductor discrete device. Detail specification for type 2CZ105 silicon witching rectifier diode 半导体分立器件 ２ｃｚ１０５型硅开关整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 50033.43-1994 |
Semiconductor discrete device. Detail specification for type 2CZ104 silicon switching rectifier diode 半导体分立器件 ２ｃｚ１０４型硅开关整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20274-1993 |
Semiconductor discrete devices Detail specificion for silicon switching diode for type 2CK84 半导体分立器件2ck84型硅开关二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20188-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550 through 2CZ5554 半导体分立器件 ２ｃｗ３０１６～３０５１型电压调整二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20187-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550~5554 半导体分立器件 ２ｃｚ５５５０～５５５４型硅整流二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20186-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CW2970~3015 半导体分立器件 ２ｃｗ２９７０～３０１５型硅电压调整二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20185-1992 |
Semiconductor discrete device Detail specification for siscon voltage reference diodes for type 2DW232~236 半导体分立器件 ２ｄｗ２３２～２３６型硅电压基准二极管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20184-1992 |
Semiconductor discrete device Detail specification for field-effect transistor of types CS3821, 3822, 3823 半导体分立器件 ｃｓ３８２１、３８２２、３８２３型场效应晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20183-1992 |
Semiconductor discrete device Detail specification for type 3DD6 power transistor 半导体分立器件 ３ｄｄ６型功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20182-1992 |
Semiconductor discrete device Detail specification for reverse-blocking thyristor for type 3CT682, 683, 685~692 and 3CT 5206 半导体分立器件 ３ｃｔ６８２、６８３、６８５～６９２和３ｃｔ５２０６型反向阻断闸流晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20181-1992 |
Semiconductor discrete device Detail specification for reverse-blocking thyristor for type 3CT107 半导体分立器件 ３ｃｔ１０７型反向阻断闸流晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20180-1992 |
Semiconductor discrete device Detail specification for reverse-blocking history type 3CT105 半导体分立器件 ３ｃｔ１０５型反向阻断闸流晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20179-1992 |
Semiconductor discrete device Detail specification for reveres-blocking history type 3CT103 半导体分立器件 ３ｃｔ１０３型反向阻断闸流晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20178-1992 |
Semiconductor discrete device Detail specification for type 3CK38 power swithing transistor 半导体分立器件 ３ｃｋ３８型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20177-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637 半导体分立器件 ３ｃｋ３６３４～３ｃｋ３６３７型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 半导体分立器件 ３ｄｇ３４３９型和３ｄｇ３４４０型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 ３ｄｇ９１８型ｎｐｎ硅超高频小功率晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20174-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A 半导体分立器件 ３ｄｋ２２２１（２２２１ａ、２２２２、２２２２ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20173-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A 半导体分立器件 ３ｄｋ２２１８（２２１８ａ、２２１９、２２１９ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20172-1992 |
Semiconductor discrete device Detail specification for type 3DK38 power swithing transistor 半导体分立器件 ３ｄｋ３８型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20171-1992 |
Semiconductor discrete device Detail specification for type 3DK51 power switching transistor 半导体分立器件 ３ｄｋ５１型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20170-1992 |
Semiconductor discrete device Detail specification for type 3DK37 power switching transistor 半导体分立器件 ３ｄｋ３７型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20169-1992 |
Semiconductor discrete device Detail specification for type 3DK36 power switching transistor 半导体分立器件 ３ｄｋ３６型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20168-1992 |
Semiconductor discrete device Detail specification for type 3DK12 power switching transistor 半导体分立器件 ３ｄｋ１２型功率开关晶体管详细规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20152-1992 |
Specification for nickel rars and nickel wires for electron devices 电子器件用镍棒、镍丝规范试验方法 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20151-1992 |
Specification for nickel strips for electron devices 电子器件用镍带规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20144-1992 |
Specification for molybdenum rods wire and sheets for electron devices 电子器件用钼杆、钼丝、钼片规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20143-1992 |
Specification for tungsten wires for electron devices 电子器件用钨丝规范 |
China Electronics
Standards Device specific |
English PDF |
| SJ 20136-1992 |
General specification for packing of military electro acoustic communication devices 军用电子设备冲击测试方法 |
China Electronics
Standards Device specific |
English PDF |
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