Cart:
Keyword:
| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ 20295-1993 |
Detail specification for type JT4344 phase-frequency detector semiconductor integrated circuits 半导体集成电路 ｊｔ４３４４型鉴频／鉴相器详细规范 |
China Electronics
Standards Detail specification frequency |
 English PDF |
| SJ 20213-1992 |
filters, radio-frequency interference, type LC201, Detail specification for ｌｃ２０１型射频干扰滤波器详细规范 |
China Electronics
Standards Detail specification frequency |
English PDF |
| SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 ３ｄｇ９１８型ｎｐｎ硅超高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification frequency |
English PDF |
| SJ 20103-1992 |
Cables, radio frequency, flexible, coaxial, 50Ω type SFF-50-1-51 and SFF-50-1-52, detail specification for ｓｆｆ－５０－１－５１、ｓｆｆ－５０－１－５２型５０ω柔软同轴射频电缆详细规范 |
China Electronics
Standards Detail specification frequency |
English PDF |
| SJ 20102-1992 |
Cables, radio frequency, flexible, coaxial, 50Ω type SFF-50-2-52, detail specification for ｓｆｆ－５０－２－５２型５０ω柔软同轴射频电缆详细规范 |
China Electronics
Standards Detail specification frequency |
English PDF |
| SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 半导体分立器件 ３ｄｇ２１３型ｎｐｎ硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards Detail specification frequency |
English PDF |
| SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 半导体分立器件 ３ｄｇ２１０型ｎｐｎ硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards Detail specification frequency |
English PDF |
| SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 ３ｄｇ１２０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification frequency |
English PDF |
| SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 ３ｄｇ１１１型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification frequency |
English PDF |
| SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１３０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification frequency |
English PDF |
| Find out:210Items | To Page of: First -Previous-Next -Last | 1 2 |
+86-755-25831330
