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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ 50033/42-1994 |
Semiconductor discrete device. Detail specification for type CS0467 GaAs microwave FET 半导体分立器件 ｃｓ０４６７型砷化镓微波场效应晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
 English PDF |
| SJ 50033/4-1994 |
Semiconductor discrete device. Detail specification for semiconductor red light emitting diodes for type GF 111 of GP and GT classes 半导体分立器件 ｇｐ和ｇｔ级ｇｆ１１１型半导体红色发光二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/41-1994 |
Detail specification for type GR9414 semiconductor infrared light eitting diode ｇｒ９４１４型半导体红外发射二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/39-1994 |
Semiconductor discrete device. Detail specification for type 2CZ106 silicon switching rectifier diode 半导体分立器件 ２ｃｚ１０６型开关整流二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/38-1994 |
Semiconductor discrete device. Detail specification for type CS4856~CS4861 silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ４８５６～ｃｓ４８６１型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/37-1994 |
Semiconductor discrete device. Detail specification for type 3DD164 power transistor 半导体分立器件 ３ｄｄ１６４型功率晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/36-1994 |
Semiconductor discrete device. Detail specification for type 3CD050 power transistor 半导体分立器件 ３ｃｄ０５０型功率晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/35-1994 |
Detail specification for type GH30 semiconductor high speed optocoupler ｇｈ３０型半导体高速光耦合器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/34-1994 |
Semiconductor discrete device. Detail specification for type FH129 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１２９型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/33-1994 |
Semiconductor discrete device. Detail specification for type FH121 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１２１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/32-1994 |
Semiconductor discrete device. Detail specification for type 3DK312 power switching transistor 半导体分立器件 ３ｄｋ３１２型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/3-1994 |
Semiconductor discrete device. Detail specification for semiconductor opto-couplers for type GH21, GH22 and GH23 of GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｇｈ２１、ｇｈ２２和ｇｈ２３型半导体光耦合器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/31-1994 |
Semiconductor discrete device. Detail specification for type FH101 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１０１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/30-1994 |
Semiconductor discrete device. Detail specification for type 3DD155 power transistor 半导体分立器件 ３ｄｄ１５５型功率晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/29-1994 |
Semiconductor discrete device. Detail specification for GaAs high-speed switching assembly for type EK20 半导体分立器件 ｅｋ２０型砷化镓高速开关组件详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/28-1994 |
Semiconductor discrete device. Detail specification stripline mixer diodes for 2CV334, 2CV3338 半导体分立器件 ２ｃｖ３３４、２ｃｖ３３３８型微带混频二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/27-1994 |
Semiconductor discrete device. Detail specification for GaAs varactor diodes for 2EC600 series 半导体分立器件 ２ｅｃ６００系列砷化镓变容二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/26-1994 |
Semiconductor discrete device. Detail specification for type 2CW1006~2CW1015 silicon voltage -- Regulator diode 半导体分立器件 ２ｃｗ１００６～２ｃｗ１０１５型硅电压调整二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/25-1994 |
Semiconductor discrete device. Detail specification for type 2CW1001~2CW1005 silicon voltage -- Regulator diode 半导体分立器件 ２ｃｗ１００１～２ｃｗ１００５型硅电压调整二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/24-1994 |
Discrete semiconductor devices Detailed specifications for 3DK310 power switching transistors 半导体分立器件 ３ｄｋ３１０型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/23-1994 |
Discrete semiconductor devices Detailed specifications for 3DK309 power switching transistors 半导体分立器件 ３ｄｋ３０９型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/22-1994 |
Semiconductor discrete device. Detail specification for silicon tuning varactor diode for type 2CC51E 半导体分立器件 ２ｃｃ５１ｅ型硅电调变容二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/2-1994 |
Semiconductor discret device. Detail specification for type 3CK2904, 3CK2904A, 3CK2905 and 3CK2905A PNP silicon cow-power switching transistor 半导体分立器件 ３ｃｋ２９０４（２９０４ａ、２９０５和２９０５ａ）型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/21-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ75 半导体分立器件 ２ｃｚ７５型硅开关整流二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/20-1994 |
Semiconductor discrete device. Detail specification for silicon rectifier diode for type 2CZ101 半导体分立器件 ２ｃｚ１０１型硅开关整流二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/19-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ74 半导体分立器件 ２ｃｚ７４型硅开关整流二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/18-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ73 半导体分立器件 ２ｃｚ７３型硅开关整流二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/17-1994 |
Discrete semiconductor devices Detailed specifications for 3DK308 power switching transistors 半导体分立器件 ３ｄｋ３０８型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/16-1994 |
Discrete semiconductor devices Detailed specifications for 3DK307 power switching transistors 半导体分立器件 ３ｄｋ３０７型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/15-1994 |
Discrete semiconductor devices Detailed specifications for 3DK306 power switching transistors 半导体分立器件 ３ｄｋ３０６型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/14-1994 |
Discrete semiconductor devices Detailed specifications for 3DK305 power switching transistors 半导体分立器件 ３ｄｋ３０５型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/13-1994 |
Discrete semiconductor devices Detailed specifications for 3DK210 power switching transistors 半导体分立器件 ３ｄｋ２１０型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/12-1994 |
Discrete semiconductor devices Detailed specifications for 3DK209 power switching transistors 半导体分立器件 ３ｄｋ２０９型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/1-1994 |
Semiconductor discrete device. Detail specification for type 3DA150 high frequency and power transistor 半导体分立器件 ３ｄａ１５０型高频功率晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/11-1994 |
Discrete semiconductor devices Detailed specifications for 3DK208 power switching transistors 半导体分立器件 ３ｄｋ２０８型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033/10-1994 |
Discrete semiconductor devices Detailed specifications for 3DK207 power switching transistors 半导体分立器件 ３ｄｋ２０７型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.56-1994 |
Semiconductor discrete device. Detail specification for type 2CK85 silicon switching diode 半导体分立器件 ２ｃｋ８５型硅开关二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.55-1994 |
Semiconductor discrete device. Detail specification for type 2CK82 silicon switching diode 半导体分立器件 ２ｃｋ８２型硅开关二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.54-1994 |
Semiconductor discrete device. Detail specification for type CS0532 GaAs microwave Power field effect transistor 半导体分立器件 ｃｓ０５３２型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.53-1994 |
Semiconductor discrete device. Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor 半导体分立器件 ｃｓ０５３０、ｃｓ０５３１型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.52-1994 |
Semiconductor discrete device. Detail specification for type CS0529 GaAs microwave Power field effect transistor 半导体分立器件 ｃｓ０５２９型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.51-1994 |
Semiconductor discrete devices. Detail specification for type CS0558 GaAs microwave dual gate FET 半导体分立器件 ｃｓ０５５８型砷化镓微波双栅场效应晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.50-1994 |
Semiconductor discrete device. Detail specification for type QL73 silicon three phase full wave bridge rectifier 半导体分立器件 ｑｌ７３型硅三相桥式整流器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.49-1994 |
Semiconductor discrete device. Detail specification for step recovery diodes for 2CJ4220 series 半导体分立器件 ２ｃｊ４２２０系列阶跃二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.48-1994 |
Semiconductor discrete device. Detail specification for type 2DV8CP silicon microwave detector diode 半导体分立器件 ２ｄｖ８ｃｐ型硅微波检波二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.47-1994 |
Semiconductor discrete device. Detail specification for type 2CZ117 silicon rectifier diode 半导体分立器件 ２ｃｚ１１７型硅整流二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.46-1994 |
Semiconductor discrete device. Detail specification for type 2CZ59 silicon rectifier diode 半导体分立器件 ２ｃｚ５９型硅整流二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.45-1994 |
Semiconductor discrete device. Detail specification for type 2CZ58 silicon rectifier diode 半导体分立器件 ２ｃｚ５８型硅整流二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.44-1994 |
Semiconductor discrete device. Detail specification for type 2CZ105 silicon witching rectifier diode 半导体分立器件 ２ｃｚ１０５型硅开关整流二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.43-1994 |
Semiconductor discrete device. Detail specification for type 2CZ104 silicon switching rectifier diode 半导体分立器件 ２ｃｚ１０４型硅开关整流二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 50033.40-1994 |
Detail specification for type GT11 semiconductor sililcon NPN photo-transistor gt11型半导体硅npn光敏晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ/T 10436-1993 |
Blank detail specification for the semiconductor resistance strain gage Assessment level E 半导体电阻应变计空白详细规范 评定水平ｅ（可供认证用） |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20305-1993 |
Detail specification for types JW723 multi-terminal adjustable precision voltage regulator of semiconductor integrated circuits 半导体集成电路ｊｗ７２３型多端可调精密稳压器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20304-1993 |
Detail specification for types JW7905, JW7906, JW7909, JW7912, JW7915, JW7918, JW7924, JM79M05, JW79M06, JW79M09, JW79M12, JW79M15, JW79M18 and JW79M24 three-terminal fixed negative output voltage regulators of semiconductor integrated circuits 半导体集成电路ｊｗ７９０５、ｊｗ７９ｍ０５等型三端固定负输出稳压器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20303-1993 |
Detail specification for types JFOP07A, JFOP07, JF714, JFOP27A and JF0P37A low offset operational amplifiers of semiconductor integrated circuits 半导体集成电路 ｊｆｏｐ０７（０７ａ、２７ａ、３７ａ）、ｊｆ７１４型低失调运算放大器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20302-1993 |
Detail specification for types JW1930-12 JW1930-15 and JW1932-5 three terminal drop-out fixed positive voltage regulators of semiconductor integrated circuits 半导体集成电路 ｊｗ１９３０－１２、ｊｗ１９３０－１５、ｊｗ１９３２－５型三端低压差固定正输出稳压器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20301-1993 |
Detail specification for types JF158 and JF158A input operational amplifiers of semiconductor integrated circuits 半导体集成电路ｊｆ１５８、ｊｆ１５８ａ型双运算放大器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20300-1993 |
Detail specification for types JF155, JF156, JF157, JF155A, JF156A and 157A JFET input operational amplifiers of semiconductor integrate circuits 半导体集成电路 ｊｆ１５５（１５６、１５７、１５５ａ、１５６ａ、１５７ａ）型ｊｆｅｔ输入运算放大器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20299-1993 |
Detail specification for type JF147 JFET input operational amplifier of semiconductor integrated circuits 半导体集成电路 ｊｆ１４７型ｊｆｅｔ输入运算放大器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20298-1993 |
Detail specification for types JB555 and JB556 precision timers of semiconductor integrated circuits 半导体集成电路 ｊｂ５５５、ｊｂ５５６型时基电路详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20297-1993 |
Detail specification for types JW117, JW117M and JW117L three terminal adjustable positive voltage regulators of semiconductor integrated circuits 半导体集成电路 ｊｗ１１７、ｊｗ１１７ｍ、ｊｗ１１７ｌ型三端可调正输出稳压器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20295-1993 |
Detail specification for type JT4344 phase-frequency detector semiconductor integrated circuits 半导体集成电路 ｊｔ４３４４型鉴频／鉴相器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20294-1993 |
Detail specification for type JW1524, JW1525, JW1525A, JW1526 and JW1527A pulse -- width modulator of semiconductor integrated circuits 半导体集成电路 ｊｗ１５２４（１５２５、１５２５ａ、１５２６、１５２７、１５２７ａ）型脉宽调制器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20293-1993 |
detail specification for types JT54LS243, JT54LS245 of bus transceivers with three-state outputs LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls243、jt54ls245型ls-ttl双向总线发送器/接收器（3s）详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20292-1993 |
detail specification for JT54LS151, JT54LS153, JT54LS157, JT54LS158, JT54LS251, JT54LS253, JT54LS257 types of LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls151（153、157、158、251、253、257）型ls-ttl数据选择器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20291-1993 |
detail specification for JT54LS279, JT54LS375 types latches of LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls279、jt54ls375型ls-ttl锁存器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20290-1993 |
detail specification for JT54LS164, JT54LS166, JT54LS194, JT54LS195 types shift registers of LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls164、jt54ls166、jt54ls194、jt54ls195型ls-ttl移位寄存器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20289-1993 |
detail specification for JT54LS390, JT54LS393, JT54LS490 types counters of LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls390、jt54ls393、jt54ls490型ls-ttl计数器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20288-1993 |
detail specification for JT54LS160, JT54LS161, JT54LS162, JT54LS163, JT54LS190, JT54LS191, JT54LS192, JT54LS193 type counters of LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls160（161、162、163、190、191、192、193）型ls-ttl计数器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20287-1993 |
detail specification for JT54LS123 type monostable multwibrator of LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls123型ls-ttl双可重触发单稳态触发器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20286-1993 |
detail specification for types JT54LS74, JT54LS112, Jt54LS174 and JT54LS175 flip-flops of LS-TTL semiconductor integrated circuits TFT-LCD 半导体集成电路 jt54ls74、jt54ls112、jt54ls174和jt54ls175型ls-ttl触发器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20285-1993 |
detail specification for JT54LS42, JT54LS138, JT54LS139 types decoders of LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls42、jt54ls138和jt54ls139型ls-ttl译码器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20283-1993 |
Detail specification for types JT54LS125, JY54LS126 of quadruple bus buffer gates with three-state outputs LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls125和jt54ls126型ls-ttl四缓冲器（3s）详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20282-1993 |
Detail specification for types JT54LS01, JT54LS27, and JT54LS266 NOR gates of LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls02、jt54ls27和jt54ls266型ls-ttl或非门详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20281-1993 |
Detail specification for type JT54LS13, JT54LS14 and JT54LS132 positive-NAND gates of LS-TTL semiconductor circuits 半导体集成电路 ｊｔ５４ｌｓ１３、ｊｔ５４ｌｓ１４和ｊｔ５４ｌｓ１３２型ｌｓ－ｔｔｌ与非门详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20280-1993 |
Detail specification for types JT54LS00, JT54LS03, JT54LS04, JT54LS05, JT54LS10, JT54LS12, JT54LS20, JT54LS22 and JT54LS30 NAND gates of LS-TTL semiconductor integrated circuits 半导体集成电路jt54ls00（03、04、05、10、12、20、22、30）型ls—ttl与非门详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20279-1993 |
Detail specification for types JT54LS08, JT54LS09, JT54LS11, JT54SL15 and JT54LS21 AND gates of LS-TTL semiconductor integrated circuits 半导体集成电路jt54ls08、jt54ls09、jt54ls11、jt54ls15、jt54ls21型ls—ttl与门详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20278-1993 |
Detail specification for types JC4014, JC4015 and JC4021 shift registers of CMOS semiconductor integrated circuits 半导体集成电路jc4014、jc4015和jc4021型cmos移位寄存器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20277-1993 |
Detail specification for types JC4001, JC4002 NOR gates of CMOS semiconductor integrated circui 半导体集成电路 jc4001、jc4002型cmos或非门详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20188-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550 through 2CZ5554 半导体分立器件 ２ｃｗ３０１６～３０５１型电压调整二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20187-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550~5554 半导体分立器件 ２ｃｚ５５５０～５５５４型硅整流二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20186-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CW2970~3015 半导体分立器件 ２ｃｗ２９７０～３０１５型硅电压调整二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20296-1993 |
Detail specification for type JF2500 and JF2520 high slew rate operational amplifiers of semiconductor integrated circuits 半导体集成电路ｊｆ２５００、ｊｆ２５２０型高转换速率运算放大器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20185-1992 |
Semiconductor discrete device Detail specification for siscon voltage reference diodes for type 2DW232~236 半导体分立器件 ２ｄｗ２３２～２３６型硅电压基准二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20184-1992 |
Semiconductor discrete device Detail specification for field-effect transistor of types CS3821, 3822, 3823 半导体分立器件 ｃｓ３８２１、３８２２、３８２３型场效应晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20183-1992 |
Semiconductor discrete device Detail specification for type 3DD6 power transistor 半导体分立器件 ３ｄｄ６型功率晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20182-1992 |
Semiconductor discrete device Detail specification for reverse-blocking thyristor for type 3CT682, 683, 685~692 and 3CT 5206 半导体分立器件 ３ｃｔ６８２、６８３、６８５～６９２和３ｃｔ５２０６型反向阻断闸流晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20181-1992 |
Semiconductor discrete device Detail specification for reverse-blocking thyristor for type 3CT107 半导体分立器件 ３ｃｔ１０７型反向阻断闸流晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20180-1992 |
Semiconductor discrete device Detail specification for reverse-blocking history type 3CT105 半导体分立器件 ３ｃｔ１０５型反向阻断闸流晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20179-1992 |
Semiconductor discrete device Detail specification for reveres-blocking history type 3CT103 半导体分立器件 ３ｃｔ１０３型反向阻断闸流晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20178-1992 |
Semiconductor discrete device Detail specification for type 3CK38 power swithing transistor 半导体分立器件 ３ｃｋ３８型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20177-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637 半导体分立器件 ３ｃｋ３６３４～３ｃｋ３６３７型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 半导体分立器件 ３ｄｇ３４３９型和３ｄｇ３４４０型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 ３ｄｇ９１８型ｎｐｎ硅超高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20174-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A 半导体分立器件 ３ｄｋ２２２１（２２２１ａ、２２２２、２２２２ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20173-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A 半导体分立器件 ３ｄｋ２２１８（２２１８ａ、２２１９、２２１９ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20172-1992 |
Semiconductor discrete device Detail specification for type 3DK38 power swithing transistor 半导体分立器件 ３ｄｋ３８型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20171-1992 |
Semiconductor discrete device Detail specification for type 3DK51 power switching transistor 半导体分立器件 ３ｄｋ５１型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20170-1992 |
Semiconductor discrete device Detail specification for type 3DK37 power switching transistor 半导体分立器件 ３ｄｋ３７型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20169-1992 |
Semiconductor discrete device Detail specification for type 3DK36 power switching transistor 半导体分立器件 ３ｄｋ３６型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20168-1992 |
Semiconductor discrete device Detail specification for type 3DK12 power switching transistor 半导体分立器件 ３ｄｋ１２型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20163-1992 |
Detail specification of Ju8086 microprocessor for semiconductor integrated circuits 半导体集成电路jμ8086型微处理器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20162-1992 |
Detail specification for types JT54LS283 4-bit binary FULL ADDERS with fast carry of LS-TTL semiconductor integrated circuits 半导体集成电路jt54ls283型ls—ttl 四位二进制超前进位全加器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20161-1992 |
Detail specification for types JT54LS273. JT54LS373. JT54LS374 and JT54LS377 cascadable FLIP-FLOPS of LS-TTL semiconductor integrated circuits 半导体集成电路jt54ls273（373、374和377）型ls—ttl 可级联触发器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20160-1992 |
Detail specification for types JT54S194 and JT54S195 shift rfgisters of S-TTL semiconductor integrated circuits 半导体集成电路jt54s194和jt54s195型s—ttl 移位寄存器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20159-1992 |
Detail specification for types JT54LS155 and JT54LS156 DECODERS of LS-TTL semiconductor integrated circuits 半导体集成电路jt54ls155和jt54ls156型ls—ttl 译码器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20158-1992 |
Detail specification for types JT54S151, JT54S153 and JT54S157 DATA SELECTORS/MULTIOLEXERS of S-TTL semiconductor integrated circuits 半导体集成电路jt54s151、jt54s153和jt54s157型s—ttl 数据选择器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20157-1992 |
Detail specification for types JT54LS32 and JT54LS86 OR GATES of LS-TTL semiconductor integrated circuits 半导体集成电路jt54ls32和jt54ls86型ls—ttl或门详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20076-1992 |
Detailed specifications for Jμ82288 bus controller of semiconductor integrated circuit 半导体集成电路jμ82288型总线控制器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20075-1992 |
Detailed specifications for Jμ8309 programmable interrupt controller of semiconductor integrated circuit 半导体集成电路jμ8259a型可编程中断控制器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20074-1992 |
Detailed specifications for Jμ8305 programmable peripheral equipment interface of semiconductor integrated circuit 半导体集成电路jμ8255a型可编程外设接口详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20073-1992 |
Detailed specifications for Jμ8304 programmable timer/counter of semiconductor integrated circuit 半导体集成电路jμ8254型可编程定时计数器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20072-1992 |
Detail specification for semiconductor opto-couplers for type GH24, GH25 and GH26 半导体分立器件 ｇｈ２４、ｇｈ２５和ｇｈ２６型半导体光耦合器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20071-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK4148 半导体分立器件 ２ｃｋ４１４８型硅开关二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20070-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK105 半导体分立器件 ２ｃｋ１０５型硅开关二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20069-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK76 半导体分立器件 ２ｃｋ７６型硅开关二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20068-1992 |
Semiconductor discrete device. Detail specification for lower noise for silicon voltage reference diode for type 2DW14~18 半导体分立器件 ２ｄｗ１４～１８型低噪声硅电压基准二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20067-1992 |
Semiconductor discrete device. Detail specification for type 2CZ30 silicon rectifier diode 半导体分立器件 ２ｃｚ３０型硅整流二极管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20066-1992 |
Semiconductor discrete device. Detail specification for type 2CL3 silicon high voltage rectifier stack 半导体分立器件 ２ｃｌ３型硅高压整流堆详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20065-1992 |
Semiconductor discrete device. Detail specification for type QL72 silicon three phase full wave bridge rectifier 半导体分立器件 ｑｌ７２型硅三相桥式整流器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20064-1992 |
Semiconductor discrete device. Detail specification for type QL71 Silicon single phase full wave bridge rectifier 半导体分立器件 ｑｌ７１型硅单相桥式整流器详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 半导体分立器件 ３ｄｇ２１３型ｎｐｎ硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 半导体分立器件 ３ｄｇ２１０型ｎｐｎ硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20061-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146 半导体分立器件 ｃｓ１４６型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 ３ｄｇ１２０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 ３ｄｇ１１１型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20058-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK105 半导体分立器件 ３ｄｋ１０５型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20057-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK104 半导体分立器件 ３ｄｋ１０４型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20056-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK103 半导体分立器件 ３ｄｋ１０３型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20055-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK102 半导体分立器件 ３ｄｋ１０２型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20054-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK101 半导体分立器件 ３ｄｋ１０１型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20016-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１８２型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１３０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20014-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power transistor for types 3CG110 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｃｇ１１０型ｐｎｐ硅小功率晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20013-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS10 GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｃｓ１０型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20012-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS4 GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｃｓ４型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ 20011-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS1 GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｃｓ１型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
| SJ/T 10147-1991 |
Detail specification for electronic components. Semiconductor integrated circuits--CT54LS195/CT74LS195 4-bit parallel-access shift register 集成电路防静电包装管 |
China Electronics
Standards Detail specification semiconductor |
English PDF |
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