Standard Code | Standard Title | Standard Class | Order |
---|---|---|---|
SJ 51929/10-2000 |
Resistors, fixed, metal film, high stability, style RJ57, detail specification for rj57型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ/T 11227-2000 |
Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 电子元器件详细规范 3da98型npn硅高频大功率晶体管 |
China Electronics
Standards Specification high |
English PDF |
YD/T 5085-2000 |
Acceptance Specification for High-Speed Paging System Installation 高速无线电寻呼系统工程验收规范 |
China Telecommunication
Standards Specification high |
English PDF |
JTJ/T 037.1-2000 |
Technical specifications of slipform construction on cement concrete pavement for highway 公路水泥混凝土路面滑模施工技术规程(附条文说明) |
China Highway & Transportation
Standards Specification high |
English PDF |
SJ 50033/141-1999 |
Semiconductor discrete devices. Detail specification for type 2EK150 FaAs high speed switching diode 半导体光电子器件2ek150型砷化镓高速开关二极管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20745-1999 |
Specification for tungsten alloy wire of high percentage of rhenium 高铼钨铼合金丝规范 |
China Electronics
Standards Specification high |
English PDF |
JT 394-1999 |
Specification for safe navigation for river high speed passenger ship 内河高速客船安全航行技术条件 |
China Highway & Transportation
Standards Specification high |
English PDF |
YD 5074-1998 |
Temporary Specification on Engineering Dsign for High Speed Radio Paging 高速无线电寻呼工程设计暂行规定 |
China Telecommunication
Standards Specification high |
English PDF |
SJ 20724-1998 |
Detail specification for type GC2004 optoelectronic isolator assembly for multi-channel high-speed data gg2240型多路高速数据光电隔离组件详细规范 |
China Electronics
Standards Specification high |
English PDF |
HG/T 3122-1998 |
Specification of the drum tester for tyres endurance or high speed test 轮胎高速、耐久试验机技术条件 |
China Chemical Industry
Standards Specification high |
English PDF |
SJ 50676/5-1998 |
Circulator, RF, high power, waveguide junction, 3cm, type HBG008A, detail specification for hbg008a型三厘米高功率结型波导射频环行器详细规范 |
China Electronics
Standards Specification high |
English PDF |
HJ T 24-1998 |
Technical specification for environmental impact assessment of electromagnetic radiation for 500Kv ultra-high voltage power transmission and transformation projects {译} 500Kv超高压送变电工程电磁辐射环境影响评价技术规范 |
China Environment Industry
Standards Specification high |
English PDF |
DL/T 628-1997 |
Specification of collective high-voltage shunt capacitor for order 集合式高压并联电容器订货技术条件 |
China Electricity & Power
Standards Specification high |
English PDF |
SJ 51929/9-1997 |
Resistors, fixed, metal film, high stability, style RJ23, detail specification for rj23型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/134-1997 |
Semiconductor discrete devices. Detail specification for type 3DD167 low -- Frequency and high -- Power transistor 半导体分立器件3dd167型低频大功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/132-1997 |
Semiconductor discrete devices. Detail specification for type 3DD260 low -- Frequency and high -- Power transistor 半导体分立器件3dd260型低频大功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/131-1997 |
Semiconductor discrete devices. Detail specification for type 3DD157 low -- Frequency and high -- Power transistor 半导体分立器件3dd157型低频大功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/130-1997 |
Semiconductor discrete devices. Detail specification for type 3DD159 low -- Frequency and high -- Power transistor 半导体分立器件3dd159型低频大功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/129-1997 |
Semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high -- Power transistor 半导体分立器件3dd155型低频大功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ/T 10995-1996 |
Detail specification for electronic components High Voltage ceramic capacitors type CT81 Assessment level E 电子器件详细规范 ct81型高压瓷介电容器 评定水平e(可供认证用) |
China Electronics
Standards Specification high |
English PDF |
SJ/T 10994-1996 |
Detail specification for electronic components High Voltage ceramic capacitors type CC81 Assessment level E 电子器件详细规范 cc81型高压瓷介电容器 评定水平e(可供认证用) |
China Electronics
Standards Specification high |
English PDF |
SJ 51929/3-1996 |
Resistors, fixed, metal film, high stability, style RJ25, detail specification for rj25型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 51929/2-1996 |
Resistors, fixed, metal film, high stability, style RJ24, detail specification for rj24型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/103-1996 |
Semiconductor discrete device. Detail specification for type 3DA89 high-frequency power transistor 半导体分立器件 3da89型高频功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20584-1996 |
General specification for high writing speed oscilloscopes 高写速示波器通用规范 |
China Electronics
Standards Specification high |
English PDF |
DL/T 405-1996 |
Technical specifications for import 252 (245)~550kV a. c. high-voltage circuit-breakers and disconnectors 进口252(245)~550kV交流高压断路器和隔离开关技术规范 |
China Electricity & Power
Standards Specification high |
English PDF |
SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 3dg144型npn硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 3dg143型npn硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 3dg142型npn硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20550-1995 |
General specification for high frequency interference field tester 高频干扰场强测试仪通用规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/92-1995 |
Semiconductor discrete device. Detail specification for type 3CD100 low-frequency and high-power transistor 半导体分立器件 3cd100型低频大功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/91-1995 |
Semiconductor discrete device. Detail specification for type 3CD030 low-fyequency and high-power transistor 半导体分立器件 3cd030型低频大功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor 半导体分立器件 3dg135型硅超高频小功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 51929.8-1995 |
Resistors, fixed, metal film, high stability, style RJ56. Detail specification rj56型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 51929.7-1995 |
Resistors, fixed, metal film, high stability, style RJ55. Detail specification rj55型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 51929.6-1995 |
Resistors, fixed, metal film, high stability, style RJ54. Detail specification rj54型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 51929.5-1995 |
Resistors, fixed, metal film, high stability, style RJ53. Detail specification rj53型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 51929.4-1995 |
Resistors, fixed, metal film, high stability, style RJ52. Detail specification rj52型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20476.2-1995 |
Detail specification for gas discharge tubes for high energy ignition of type R2100 R2100型高能点火气体放电管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20476.1-1995 |
Detail specification for gas discharge tubes for high energy ignition of type R2400A R2400A型高能点火气体放电管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/67-1995 |
Semiconductor discrete device. Detail specification for type 3CD103 High. Voltage low. Frequency and high. Power transistor 半导体分立器件 3dd103型高压低频大功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/66-1995 |
Semiconductor discrete device. Detail specification for type 3CD880 Low. Frequency and high. Power transistor 半导体分立器件 3dd880型低频大功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/65-1995 |
Semiconductor discrete device. Detail specification for type 3DD175 Low. Frequency and high. Power transistor 半导体分立器件 3dd175型低频大功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/64-1995 |
Semiconductor discrete device. Detail specification for type 3CD010 Low. Frequency and high. Power transistor 半导体分立器件 3cd010型低频大功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/63-1995 |
Semiconductor discrete device. Detail specification for type 3CD020 Low. Frequency and high. Power transistor 半导体分立器件 3cd020型低频大功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/62-1995 |
Semiconductor discrete device Detail specification for type 3DK406 high. Voltage and power switching transistor 半导体分立器件 3dk406型高压功率开关晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/61-1995 |
Semiconductor discrete device. Detail specification for type 3DK6547 high. Voltage and power switching transistor 半导体分立器件 3dk6547型高压功率开关晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50597/25-1994 |
Semiconductor integrated circuits Detail specification for type JF7650 CMOS operational amplifier with high accuracy 半导体集成电路 jf7650型cmos高精度运算放大器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50597/24-1994 |
Semiconductor integrated circuits Detail specification of type JF3140 and JF3140A BiMOS operational amplifiers with high input impedence 半导体集成电路 jf3140、jf3140a型bim0s高输入阻抗运算放大器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50597/13-1994 |
Detail specification for hybrid microcircuits HSH4860 high speed, precision sample/hold amplifier 混合微电路详细规范 hsh4860型高速精密采样/保持放大器 |
China Electronics
Standards Specification high |
English PDF |
SJ 50597.5-1994 |
Detail specification for types JF725 and JF725A high accuracy operational amplifiers of semiconductor integrated circuits 半导体集成电路 jf725、jf725a型高精度运算放大器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/35-1994 |
Detail specification for type GH30 semiconductor high speed optocoupler gh30型半导体高速光耦合器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/29-1994 |
Semiconductor discrete device. Detail specification for GaAs high-speed switching assembly for type EK20 半导体分立器件 ek20型砷化镓高速开关组件详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 50033/1-1994 |
Semiconductor discrete device. Detail specification for type 3DA150 high frequency and power transistor 半导体分立器件 3da150型高频功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20396-1994 |
General specification for grid control traveling wave tube combined high voltage power supply of airborne radar 机载雷达用栅控行波管组合高压电源通用规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20339-1993 |
Detail specification for high power electrical dummy losd for 3cm aluminium waveguide 3cm铝波导高功率假负载详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20296-1993 |
Detail specification for type JF2500 and JF2520 high slew rate operational amplifiers of semiconductor integrated circuits 半导体集成电路jf2500、jf2520型高转换速率运算放大器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 半导体分立器件 3dg3439型和3dg3440型npn硅小功率高反压晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 3dg918型npn硅超高频小功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20087-1992 |
Detail specification capacitors, fixed, ceramic dielectric, high voltage type CT8112 ct8112型高压瓷介固定电容器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20086-1992 |
Detail specification capacitors, fixed, ceramic dielectric, high voltage type CT8110 ct8110型高压瓷介固定电容器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20085-1992 |
Detail specification capacitors, fixed, ceramic dielectric, high voltage type CT8108 ct8108型高压瓷介固定电容器详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20066-1992 |
Semiconductor discrete device. Detail specification for type 2CL3 silicon high voltage rectifier stack 半导体分立器件 2cl3型硅高压整流堆详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 半导体分立器件 3dg213型npn硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 半导体分立器件 3dg210型npn硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 3dg120型npn硅高频小功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 3dg111型npn硅高频小功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20016-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes 半导体分立器件 gp、gt和gct级3dg182型npn硅小功率高反压晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 gp、gt和gct级3dg130型npn硅高频小功率晶体管详细规范 |
China Electronics
Standards Specification high |
English PDF |
SJ/T 10209-1991 |
Detail specification for electronic components. Fixed bottle high-power ceramic dielectric capacitors for Type CCG11 Assesment level E(Applicable for certification) 电子器件详细规范 ccg11型瓶形高功率瓷介固定电容器 评定水平e(可供认证用) |
China Electronics
Standards Specification high |
English PDF |
JC/T 401.1-1991 |
High manganese steel castings intended to be used in building materials machinery. Technical specification |
China Building Materials
Standards Specification high |
English PDF |
JJG(SJ)04023-1989 |
Specification for verification of BJ2970 model high power semiconductor triode tf tester |
China Metrological
Standards Specification high |
English PDF |
JJG(SJ)04022-1989 |
Specification for verification of Q01 model high frequency low power triode transistor Ft standard measurement meters |
China Metrological
Standards Specification high |
English PDF |
JJG(SJ)04020-1989 |
Specification for verification of sample transistor specially intended to measure the noise factor of high frequency medium and low power triode transistor |
China Metrological
Standards Specification high |
English PDF |
JJG(SJ)04011-1987 |
Trial specification for verification of QG21-QG25 high frequency low-power transistor F testers |
China Metrological
Standards Specification high |
English PDF |
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