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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ 50033/169-2004 |
Semiconductor discrete devices. Detail specification for type 3DA510 silicon microwave pulse power transistor 半导体分立器件3da510型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards conduct |
 English PDF |
| SJ 50033/168-2004 |
Semiconductor discrete devices. Detail specification for type 3DA509 silicon microwave pulse power transistor 半导体分立器件3da509型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/167-2004 |
Semiconductor discrete devices. Detail specification for type 3DA508 silicon microwave pulse power transistor 半导体分立器件3da508型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/166-2004 |
Semiconductor discrete devices. Detail specification for type 3DA507 silicon microwave pulse power transistor 半导体分立器件3da507型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| DL/T 880-2004 |
Flexible conductor cover(line hoses) of insulating material for live working 带电作业用导线软质遮蔽罩 |
China Electricity & Power
Standards conduct |
English PDF |
| DL/T 858-2004 |
Live working-Installation of distribution live conductors-stringing equipment and accessory items 架空配电线路带电安装及作业工具设备 |
China Electricity & Power
Standards conduct |
English PDF |
| DL/T 765.3-2004 |
Overhead insulated conductor fittings of rated voltages up to 10kv 额定电压10kV及以下架空绝缘导线金具 |
China Electricity & Power
Standards conduct |
English PDF |
| DL/T 765.2-2004 |
Overhead conductor fittings of rated voltages up to 10kv 额定电压10kV及以下架空裸导线金具 |
China Electricity & Power
Standards conduct |
English PDF |
| SJ 50033/165-2003 |
Semiconductor discrete device Detail specification of type PIN0003 PIN diode 半导体分立器件pin0003型pin二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/164-2003 |
Semiconductor discrete devices. Detail specification for type PIN0002 PIN diode 半导体分立器件pin0002型pin二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/163-2003 |
Semiconductor discrete device. Detail specification of type 3DK457 for power switching transistors 半导体分立器件3dk457型功率开关晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/162-2003 |
Semiconductor discrete device. Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes 半导体分立器件2cw1022型硅双向电压调整二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| YD/T 1281-2003 |
Local telecommunications cable for broadband applications, polyolefin insulated copper conductors, laminated aluminium polyethylene sheath 适于宽带应用的铜芯聚烯烃绝缘铝塑综合护套市内通信电缆 |
China Telecommunication
Standards conduct |
English PDF |
| SJ 51420/3-2003 |
Detail specification of ceramic PGA for semiconductor integrated circuits 半导体集成电路陶瓷针栅阵列外壳详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/59-2003 |
Semiconductor integrated circuits Detail specification for type JB523 wide-band Logarithmic amplifier 半导体集成电路 jb523型宽带对数放大器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/58-2003 |
Semiconductor integrated circuits Detail specification for type JB726 limit Amplifier discriminator 半导体集成电路 jb726型限幅放大鉴频器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/57-2003 |
Semiconductor integrated circuits Detail specification for type JW584/JW584A progammable voltage reference 半导体集成电路 jw584/jw584a型可编程电压基准详细规范 |
China Electronics
Standards conduct |
English PDF |
| HJ/T 97-2003 |
The technical requirement for water quality automatic analyzer of electroconductivity 电导率水质自动分析仪技术要求 |
China Environmental Protection Industry
Standards conduct |
English PDF |
| HJ/T97-2003 |
Technical requirements for conductivity water quality automatic analyzer {译} 电导率水质自动分析仪技术要求 |
China Environment Industry
Standards conduct |
English PDF |
| SJ 20786.1-2002 |
Semiconductor photoelectric assembly Detail specification for miniature duplex photoelectric localizer for type CBGS 2301 半导体光电组件.CBGS2301微型双向光电定位器.详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/161-2002 |
Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2CW210~251 半导体分立器件 2cw210-251型硅电压调整二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/160-2002 |
Semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power transistor 半导体分立器件 3dg122型硅超高频小功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/159-2002 |
Semiconductor discrete devices. Detail specification for type 3DG142 silicon UHF low-noise transistor 半导体分立器件 3dg142型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/158-2002 |
Semiconductor discrete devices. Detail specification for type 3DG44 silicon UHF low-noise transistor 半导体分立器件 3dg44型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/157-2002 |
Semiconductor discrete devices. Detail specification for type 3DA506 silicon microwave pulse power transistor 半导体分立器件 3da506型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/156-2002 |
Semiconductor discrete devices. Detail specification for type 3DA505 silicon microwave pulse power transistor 半导体分立器件 3da505型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/155-2002 |
Semiconductor discrete devices. Detail specification for type 3DG252 sillcon microwave linearity transistor 半导体分立器件 3dg252型硅微波线性晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/154-2002 |
Semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise transistor 半导体分立器件 3dg251型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/153-2002 |
Semiconductor discrete devices. Detail specification for type 2CK141 microwave switch diode 半导体分立器件 2ck141型微波开关二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/152-2002 |
Semiconductor discrete devices. Detail specification for type 2CK140 microwave switch diode 半导体分立器件 2ck140型微波开关二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/151-2002 |
Semiconductor discrete device. Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 半导体分立器件 2dw14-18型低噪声硅电压基准二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/150-2002 |
Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2DW230~236 半导体分立器件 2dw230-236型硅电压基准二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 53930/1-2002 |
Semiconductor optoelectronic devices detail specification for type GR8813 infrared emitting diode 半导体光电子器件gr8813型红外发射二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20819-2002 |
Semiconductor photoelectric assembly Detail specification for miniature duplex photoelectric localizer for type CBGS 2301 军用emi吸波元件(包括磁珠、磁环、磁筒、磁夹板等元件)通用规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/56-2002 |
Semiconductor integrated circuits Detail specification for type JW920 PIN driver 半导体集成电路jw920型pin驱动器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/55-2002 |
Semiconductor integrated circuits Detail specification for JSC320C25 digital signal proces 半导体集成电路jsc320c25型数字信号处理器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/54-2002 |
Semiconductor integrated circuits. Detail specification for JW431 prefision adjustable voltage reference 半导体集成电路jw431精密可调电压基准源详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20644.2-2001 |
Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode 半导体光电子器件 GD101型PIN光电二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20644.1-2001 |
Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode 半导体光电子器件 GD3550Y型PIN光电二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ/T 10805-2000 |
Semiconductor interface integrated circuits General principles of measuring methods for voltage comparators 半导体集成电路电压比较器测试方法的基本原理 |
China Electronics
Standards conduct |
English PDF |
| SJ 20642.7-2000 |
Semiconductor opto-electronic devices Detail specification for type GR1325J light emitting diode module 半导体光电器件GR1325J型长波长发光二极管组件详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/53-2000 |
Semiconductor integrated circuits. Detail specification for Type JB3081, JB3082 transistor arrays 半导体集成电路jb3081、jb3082型晶体管阵列详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/52-2000 |
Semiconductor integrated circuits. Detail specification for Type JB537 voltage-to-frequency converter 半导体集成电路jb537型电压频率转换器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/149-2000 |
Semiconductr discrete devices. Detail specification for type 2CW100~121 glass passivation package sillcon voltage-requlator diodes 半导体分立器件2cw100—121型玻璃钝化封装硅电压调整二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/148-2000 |
Semiconductor discrete devices. Detail specification for type 3DK35B~F power switching transistors 半导体分立器件3dk35b—f型功率开关晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/147-2000 |
Semiconductor optoelectronic devices. Detail specification for type GF1121 Light-emitting diode indicate lamp 半导体光电子器件gf1121型led指示灯详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/146-2000 |
Semiconductor discrete devices. Detail specification for type 3DA601 C band silicon bipolar power transistor 半导体分立器件3da601型c波段硅双极型功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/145-2000 |
Semiconductor discrete devices. Detail specification for type 3DA503 silicon microwave pulse power transistor 半导体分立器件3da503型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20788-2000 |
Measurment method for thermal impedance of semiconductor diodes 半导体二极管热阻抗测试方法 |
China Electronics
Standards conduct |
English PDF |
| SJ 20787-2000 |
Measurment method for thermal resistance of semiconductor bridge rectifieres 半导体桥式整流器热阻测试方法 |
China Electronics
Standards conduct |
English PDF |
| SJ 20786-2000 |
General specification for semiconductor opto-electronic assembly 半导体光电组件总规范 |
China Electronics
Standards conduct |
English PDF |
| DL/T 685-1999 |
Basic requirements, inspection specification and determination methods of conductor stringing sheave 放线滑轮基本要求、检验规定及测试方法 |
China Electricity & Power
Standards conduct |
English PDF |
| DL 5106-1999 |
Operation code of cross power transmission line in installing the conductor 跨越电力线路架线施工规程 |
China Electricity & Power
Standards conduct |
English PDF |
| SJ 51524/3-1999 |
Cables, radio frequency, corrugated tube outer conductor, polyethylene helix dielectric, type SDY - 50 - 80 - 51, detail specification for sdy-50-80-51型螺旋聚乙烯绝缘皱纹管外导体射频电缆详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 51524/2-1999 |
Cables, radio frequency, corrugated tube outer conductor, polyethylene helix dielectric, type SDY - 50 - 22 - 51, detail specification for sdy-50-22-51型螺旋聚乙烯绝缘皱纹管外导体射频电缆详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/51-1999 |
Semiconductor integrated circuits Detail specification for types JW1846/JW1847 current-mode pulse-width modulator controller 半导体集成电路jw1846/jw1847型电流型脉冲宽度调制控制器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/144-1999 |
Semiconductor discrete devices. Detail specification for types 2CW50~78 glass passivation package Silicon voltage-regulator diodes 半导体光电子器件2cw50～78型玻璃钝化封装硅电压调整二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/143-1999 |
Semiconductor optoelectronic devices. Detail specification for type GF1120 red emitting diode 半导体光电子器件gf1120型红色发光二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/142-1999 |
Semiconductor optoelectronic devices. Detail specification for type GF4112 green emitting diode 半导体光电子器件gf4112型绿色发光二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/141-1999 |
Semiconductor discrete devices. Detail specification for type 2EK150 FaAs high speed switching diode 半导体光电子器件2ek150型砷化镓高速开关二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20758-1999 |
Semiconductor integrated circuits Specification for COMS gate array devices 半导体集成电路cmos门阵列器件规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20756-1999 |
Guideline for application of structurally similarity of discrete semiconductor devices 半导体分立器件结构相似性应用指南 |
China Electronics
Standards conduct |
English PDF |
| SJ 20744-1999 |
General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials 半导体材料杂质含量红外吸收光谱分析通用导则 |
China Electronics
Standards conduct |
English PDF |
| YD/T 940-1999 |
Semiconductor arrester for The over_voltage protection of telecommunications installations 通信设备过电压保护用半导体管 |
China Telecommunication
Standards conduct |
English PDF |
| HG/T 3506-1999 |
Surface active agents. Determination of electrical conductivity of water or aqueous solutions for tests 表面活性剂.试验用水活或水溶液电导率的测定 |
China Chemical Industry
Standards conduct |
English PDF |
| SJ 50033/140-1999 |
Semiconductor discrete devices. Detail specification for type 3DA502 silicon microwave pulse power transistor 半导体光电子器件3da502型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/139-1998 |
Semiconductor optoelectronic devices. Detail specification for green light -- Emitting diode for type GF4111 半导体光电子器件gf4111型绿色发光二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/138-1998 |
Semiconductor optoelectronic devices. Detail specification for yellow light -- Emitting diode for type GF318 半导体光电子器件gf318型黄色发光二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 51420/2-1998 |
Detail specification of type F ceramic FP for semiconductor integrated circuits 半导体集成电路f型陶瓷扁平外壳详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20642.6-1998 |
Semiconductor opto-electronic module Detail specification for type GH83 opto-couplers 半导体光电模块GH83型光耦合器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20642.3-1998 |
Semiconductor opto-electronic module Detail specification for type GD83 PIN-FET opto-receiver module 半导体光电模块GD83型PIN-FET光接收模块详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20642.2-1998 |
Semiconductor opto-electronic module Detail specification for type GD82 PIN-FET opto-receiver module 半导体光电模块GD82型PIN-FET光接收模块详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20642.5-1998 |
Semiconductor optoelectronic module Detail specification for type GH82 opto-couplers 半导体光电模块GH82型光耦合器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20642.4-1998 |
Semiconductor optoelectronic module Detail specification for type GH81 opto-couplers 半导体光电模块GH81型光耦合器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20642.1-1998 |
Semiconductor opto-electronic module Detail specification for type GD81 PIN-FET opto-receiver module 半导体光电模块GD81型DIN-FET光接收模块详细总规范 |
China Electronics
Standards conduct |
English PDF |
| JC/T 675-1997 |
Glass. The method for measuring thermal conductivity 玻璃导热系数试验方法 |
China Building Materials
Standards conduct |
English PDF |
| SJ 50597/50-1997 |
Semiconductor integrated cicuits Detail specification for type JT54F74 FTTL dual D positive edge-triggered flip-flops 半导体集成电路jt54f74型fttl双上升沿d触发器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/45-1997 |
Semiconductor integrated circuits Detail specification for types JJ55107, JJ55108, JJ55113, JJ55114 and JJ55115 linear line drivers and receivers 半导体集成电路jj55107、jj55108、jj55113～jj55115线接收器/驱动器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/44-1997 |
Semiconductor integrated circuits Detail specification for type JB42 modulator/demodulator 半导体集成电路jb42型调制解调器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/43-1997 |
Semiconductor integrated circuits Detail specification for type JF36 low noise wide-band amplifier 半导体集成电路jf36型低噪声宽带放大器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/137-1997 |
Semiconductor optoelectronic devices. Detail specification for orange -- Red light emitting diode for type GF216 半导体光电子器件gf216型橙色发光二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/136-1997 |
Semiconductor optoelectronic devices. Detail specification for red light emitting diode for type GF116 半导体分立器件gf116型红色发光二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/135-1997 |
Semiconductor discrete devices. Detail specification for type 2CZ10 silicon switching rectifier diode 半导体分立器件2cz10型硅开关整流二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/134-1997 |
Semiconductor discrete devices. Detail specification for type 3DD167 low -- Frequency and high -- Power transistor 半导体分立器件3dd167型低频大功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/133-1997 |
Semiconductor discrete devices. Detail specification for type SY5629-5665A tramsient voltage suppression diodes 半导体分立器件sy5629～5665a型瞬态电压抑制二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/132-1997 |
Semiconductor discrete devices. Detail specification for type 3DD260 low -- Frequency and high -- Power transistor 半导体分立器件3dd260型低频大功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/131-1997 |
Semiconductor discrete devices. Detail specification for type 3DD157 low -- Frequency and high -- Power transistor 半导体分立器件3dd157型低频大功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/130-1997 |
Semiconductor discrete devices. Detail specification for type 3DD159 low -- Frequency and high -- Power transistor 半导体分立器件3dd159型低频大功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/129-1997 |
Semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high -- Power transistor 半导体分立器件3dd155型低频大功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/128-1997 |
Semiconductor discrete devices. Detail specification for type 2DK15 SCHOTTKY ailicon switching rectifier diode 半导体分立器件2dk15型硅肖特基开关整流二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/127-1997 |
Semiconductor discrete devices. Detail specification for type 2DK14 SCHOTTKY ailicon switching rectifier diode 半导体分立器件2dk14型硅肖特基开关整流二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/126-1997 |
Semiconductor discrete device. Detail specification for type 2DK13 SCHOTTKY ailicon switching rectifier diode 半导体分立器件2dk13型硅肖特基开关整流二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/125-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN11~15 半导体分立器件pin11～15型硅pin二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/124-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN101~105 半导体分立器件pin101～105型硅pin大功率二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/123-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN62317 半导体分立器件pin62317型硅pin大功率二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/122-1997 |
Semiconductor discrete devices. Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3684～cs3687型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/121-1997 |
Semiconductor discrete devices. Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3458～cs3460型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/120-1997 |
Semiconductor discrete devices. Detail specification for type CS205 GaAs microwave power field effect transistor 半导体分立器件cs205型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/119-1997 |
Semiconductor discrete devices. Detail specification for type CS204 GaAs microwave power field effect transistor 半导体分立器件cs204型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/118-1997 |
Semiconductor discrete devices. Detail specification for type 2EK31 GaAs switching diode 半导体分立器件2ek31型砷化镓开关二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/117-1997 |
Semiconductor discrete devices. Detail specification for type 2CK38 silicon large current switch diode 半导体分立器件2ck38型硅大电流开关二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/116-1997 |
Semiconductor discrete devices. Detail specification for type 2CK29 silicon large current switch diode 半导体分立器件2ck29型硅大电流开关二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/115-1997 |
Semiconductor discrete devices. Detail specification for type 2CK28 silicon large current switch diode 半导体分立器件2ck28型硅大电流开关二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 20642-1997 |
Semiconductor opto-electronic module. General specification for 半导体光电模块总规范 |
China Electronics
Standards conduct |
English PDF |
| HG/T 2905-1997 |
Plastics-phenolic resins. Determination of electrical conductivity of resin extracts 酚醛树脂萃取液电导率的测定 |
China Chemical Industry
Standards conduct |
English PDF |
| SJ/T 11067-1996 |
Commonly used terms for semiconductor photoelectric materials and pyroelectricmaterials in infrared detecting materials 红外探测材料中半导体光电材料和热释电材料常用名词术语 |
China Electronics
Standards conduct |
English PDF |
| SJ 51420/1-1996 |
Detail specification of type D ceramic DIP for semiconductor integrated circuits 半导体集成电路d型陶瓷双列外壳详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/42-1996 |
Semiconductor integrated circuits. Detail specification for Types JW79L06, JW79L09, JW79L12, JW79L15, JW79L18 and JW79L24 three terminal fixed output negative voltage regulators 半导体集成电路 ｊｗ７９ｌ０５（０６、０９、１２、１５、１８、２４）型三端固定负输出电压调整器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/41-1996 |
Semiconductor integrated circuits. Detail specification for Type JE10531 ECL dual D master-slave flip-flop 半导体集成电路 ｊｅ１０５３１型ｅｃｌ双ｄ主从触发器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/40-1996 |
Semiconductor integrated circuits Detail specification for type JC54HC75, JC54HC259, JC54HC373, JC54HC533, JC54HC573 HCMOS latches. 半导体集成电路 jc54hc75、jc54hc259、jc54hc373、jc54hc533和jc54hc573型hcmos锁存器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/39-1996 |
Semiconductor integrated circuits Detail specification for type JC54HC221 HCMOS dual monostable multivibrators with schmitt triggers inputs 半导体集成电路 jc54hc221型hcmos双单稳态触发器（斯密特触发输入）详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/114-1996 |
Semiconductor discrete device. Detail specification for type GD3283Y position sensitive detector 半导体光电子器件 ｇｄ３２８３ｙ型位敏探测器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/113-1996 |
Semiconductor discrete device. Detail specification for type GD3252Y photodiodes 半导体光电子器件 ｇｄ３２５２ｙ型光电二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/112-1996 |
Semiconductor discrete device. Detail specification for type GD3251Y photodiodes 半导体光电子器件 ｇｄ３２５１ｙ型光电二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/111-1996 |
Semiconductor optoelectronic devices. Detail specification for type GT16 Si.NPN phototransistor 半导体光电子器件 ｇｔ１６型硅ｎｐｎ光电晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/110-1996 |
Semiconductor optoelectronic devices. Detail specification for type GR9413 infrared light emitting diode 半导体光电子器件gr9413型红外发射二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/109-1996 |
Semiconductor discrete device. Detail specification for type GJ9032T and GJ9034T semiconductor laser diodes 半导体光电子器件gj9031t、gj9032t和gj9034t型 半导体激光二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/108-1996 |
Semiconductor discrete device. Detail specification for Gunn diodes for type 2EY5671, 2EY5672 半导体分立器件 ２ｅｙ５６７１、２ｅｙ５６７２型体效应二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/107-1996 |
Semiconductor discrete device. Detail specification for Gunn diodes for type 2EY621, 2EY622, 2EY623 半导体分立器件 ２ｅｙ６２１、２ｅｙ６２２、２ｅｙ６２３型体效应二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/106-1996 |
Semiconductor discrete device. Detail specification for type CS203 GaAs microwave low noise field effect transistor 半导体分立器件 ｃｓ２０３型砷化镓微波低噪声场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/105-1996 |
Semiconductor discrete device Detail specification for type 3DK404 power switching transistor 半导体分立器件 ３ｄｋ４０４型功率开关晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/104-1996 |
Semiconductor discrete device. Detail specification for type 3DK002 power switching transistor 半导体分立器件 ３ｄｋ００２型功率开关晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/103-1996 |
Semiconductor discrete device. Detail specification for type 3DA89 high-frequency power transistor 半导体分立器件 ３ｄａ８９型高频功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ/T 10696-1996 |
Semiconductor discrete device Detail specification for type QL50 in use for automotive nine diodes bridge rectifying modules 半导体分立器件 ｑｌ５０型机动车用九管桥式整流组件详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/38-1995 |
Semiconductor integrated circuits. Detail specification for Type JM2148H NMOS 1024*4 bit static random access memory 半导体集成电路 ｊｍ２１４８ｈ型ｎｍｏｓ１０２４×４位静态随机存取存储器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/37-1995 |
Semiconductor integrated circuits. Detail specification for Type JSC145152 CMOS parallel input phase-locked loop frequency synthesizer 半导体集成电路 ｊｓｃ１４５１５２型ｃｍｏｓ并行输入锁相环频率合成器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/36-1995 |
Semiconductor integrated circuits. Detail specification for Type JC54HC08, JC54HC11, JC54HC32, JC54HC86 HCMOS gates 半导体集成电路 ｊｃ５４ｈｃ０８、ｊｃ５４ｈｃ１１、ｊｃ５４ｈｃ３２、ｊｃ５４ｈｃ８６型ｈｃｍｏｓ门电路详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/35-1995 |
Semiconductor integrated circuits. Detail specification for Type JC4520 CMOS dual 4-bit binary up-counters 半导体集成电路 ｊｃ４５２０型ｃｍｏｓ双４位二进制同步计数器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/34-1995 |
Semiconductor integrated circuits. Detail specification for Types JC4085, JC4086, JC4070, JC4077 CMOS gates 半导体集成电路 ｊｃ４０８５、ｊｃ４０８６、ｊｃ４０７０、ｊｃ４０７７型ｃｍｏｓ门电路详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/99-1995 |
Semiconductor discrete device. Detail specification for o/G double colour light emitting diode for type GF511 半导体光电子器件 ｇｆ５１１型橙／绿双色发光二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/98-1995 |
Semiconductor discrete device. Detail specification for type 2CJ4211 and 2CJ4212 step recovery diodes 半导体分立器件 ２ｃｊ４２１１、２ｃｊ４２１２型阶跃恢复二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/97-1995 |
Semiconductor discrete device. Detail specification for type 2CJ4011, 2CJ4012, 2CJ4021 and 2CJ4022 step recovery diodes 半导体分立器件 ２ｃｊ４０１１、２ｃｊ４０１２、２ｃｊ４０２１、２ｃｊ４０２２型阶跃恢复二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 ３ｄｇ２１６型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50923/2-1995 |
Detail specification for types G2-01B-M1, G2-01B-Z1 metal case for semiconductor photosensitive devices ｇ２－０１ｂ－ｍ１型和ｇ２－０１ｂ－ｚ１型半导体光敏器件金属外壳详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50923/1-1995 |
Detail specification for types A6 -- 02A -- M2/Z2 and A6 -- 01B --M1/Z1 metal case for semiconductor photocouplers ａ６－０２ａ－ｍ２／ｚ２和ａ６－０１ｂ－ｍ１／ｚ１型半导体光耦合器金属外壳详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/101-1995 |
Detail specification for semiconductor laser diode modules for type GJ1325 ｇｊ１３２５型半导体激光二极管组件详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/100-1995 |
Semiconductor discrete device. Detail specification for type 2CJ60 step recovery diodes 半导体分立器件 ２ｃｊ６０型阶跃恢复二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| DL/T 602-1996 |
Erection and acceptance regulations for overhead distribution lines with insulated conductors 架空绝缘配电线路施工及验收规程 |
China Electricity & Power
Standards conduct |
English PDF |
| DL/T 601-1996 |
Design technique requlations for overhead distribution lines with insulated conductors 架空绝缘配电线路设计技术规程 |
China Electricity & Power
Standards conduct |
English PDF |
| HG 2793-1996 |
(Industrial conductive and antistatic rubber sheet) 工业用导电和抗静电橡胶板 |
China Chemical Industry
Standards conduct |
English PDF |
| YD/T 840-1996 |
Telephone subscriber indoor copper-conductor wires 电话网用户铜芯室内线 |
China Telecommunication
Standards conduct |
English PDF |
| JT 230-1995 |
Rubber belt of electrostatic conductivity for motor vehicle 汽车导静电橡胶拖地带 |
China Highway & Transportation
Standards conduct |
English PDF |
| SJ 50597/33-1995 |
Semiconductor integrated circuits. Detail specification for Type JB200 CMOS dual SPST analog switch 半导体集成电路 ｊｂ２００型ｃｍｏｓ双路单刀单掷模拟开关详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/32-1995 |
Semiconductor integrated circuits. Detail specification for Type JW4805, JW4810 and JW4812 three terminal low drop fixed output positive voltage regulators 半导体集成电路 ｊｗ４８０５、ｊｗ４８１０、ｊｗ４８１２型三端低压差固定正输出电压调整器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/31-1995 |
Semiconductor integrated circuits. Detail specification for Type JC4007 CMOS dual somplementary pair plus inverter and Type JC4048 CMOS multi function expandable 8 input gate 半导体集成电路 ｊｃ４００７型ｃｍｏｓ双互补对及反相器和ｊｃ４０４８型ｃｍｏｓ８输入多功能门（可扩展）详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/92-1995 |
Semiconductor discrete device. Detail specification for type 3CD100 low-frequency and high-power transistor 半导体分立器件 ３ｃｄ１００型低频大功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/91-1995 |
Semiconductor discrete device. Detail specification for type 3CD030 low-fyequency and high-power transistor 半导体分立器件 ３ｃｄ０３０型低频大功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/90-1995 |
Semiconductor discrete device. Detail specification for type 3DK106 NPN silicon low -- Power switching transistor 半导体分立器件 ３ｄｋ１０６型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/89-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ６７６8and ＣＳ６７70 silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ６７６８和ｃｓ６７７０型硅ｎ沟道增强型场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/88-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ６７６０and ＣＳ６７６２ silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ６７６０和ｃｓ６７６２型硅ｎ沟道增强型场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/87-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ４０９１~ＣＳ４０９３ silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ４０９１～ｃｓ４０９３型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/86-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ５１１４~ＣＳ５１１６ silicon P-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ５１１４～ｃｓ５１１６型硅ｐ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/85-1995 |
Semiconductor discrete device. Detail specification for type CS141 silicon N-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１４１型硅ｎ沟道ｍｏｓ耗尽型场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/84-1995 |
Semiconductor discrete device. Detail specification for type CS140 silicon N-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１４０型硅ｎ沟道ｍｏｓ耗尽型场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/83-1995 |
Semiconductor discrete device. Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１３９型硅ｐ沟道ｍｏｓ增强型场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/82-1995 |
Semiconductor discrete device. Detail specification for type 3DK100 NPN silicon low-power switching transistor 半导体分立器件 ３ｄｋ１００型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/81-1995 |
Semiconductor discrete devices. Detail specification for type CS0524 GaAs microwave FET 半导体分立器件 ｃｓ０５２４型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/80-1995 |
Semiconductor discrete devices. Detail specification for type CS0513 GaAs microwave FET 半导体分立器件 ｃｓ０５１３型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/79-1995 |
Semiconductor discrete devices. Detail specification for type CS0536 GaAs microwave power FET 半导体分立器件 ｃｓ０５３６型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/78-1995 |
Semiconductor discrete devices. Detail specification for type CS0464 GaAs microwave FET 半导体分立器件 ｃｓ０４６４型砷化镓微波场效应晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/77-1995 |
Semiconductor discrete devices. Detail specification for type 3DA331 Silicon microwave power tansistor 半导体分立器件 ３ｄａ３３１型硅微波功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/76-1995 |
Semiconductor discrete devices. Detail specification for type 3DG218 Silicon microwave low-noise tansistor 半导体分立器件 ３ｄｇ２１８型硅微波低噪声晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor 半导体分立器件 ３ｄｇ１３５型硅超高频小功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/74-1995 |
Semiconductor discrete device. Detail specification for type 3DA325 silicon microwave power tansistor 半导体分立器件 ３ｄａ３２５型硅微波功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/73-1995 |
Semiconductor discrete device. Detail specification for type QL74 silicon single phase bridge rectifier 半导体分立器件 ｑｌ７４型硅单相桥式整流器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/72-1995 |
Semiconductor discrete device. Detail specification for type PIN323 series for PIN diode 半导体分立器件 ｐｉｎ３２３型ｐｉｎ二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/71-1995 |
Semiconductor discrete device Detail specification for type PIN342 series for PIN diode 半导体分立器件 ｐｉｎ３４２型ｐｉｎ二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/70-1995 |
Semiconductor discrete device. Detail specification for type PIN35 series for PIN diode 半导体分立器件 ｐｉｎ３５系列ｐｉｎ二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/69-1995 |
Semiconductor discrete device. Detail specification for type PIN 30 series for PIN diode 半导体分立器件 ｐｉｎ３０系列ｐｉｎ二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/68-1995 |
Semiconductor discrete device. Detail specification for type BT51 NPN silicon small power difference matchen -- Pair transistor 半导体分立器件 ｂｔ５１型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 51524.1-1995 |
Cables, radio frequency, corrugated tube outer conductor, polyethylene helix dielectric, type SDY-50-40-51. Detail specification sdy-50-40-51型螺旋聚乙烯绝缘皱纹管外导体射频电缆详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/67-1995 |
Semiconductor discrete device. Detail specification for type 3CD103 High. Voltage low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１０３型高压低频大功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/66-1995 |
Semiconductor discrete device. Detail specification for type 3CD880 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ８８０型低频大功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/65-1995 |
Semiconductor discrete device. Detail specification for type 3DD175 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１７５型低频大功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/64-1995 |
Semiconductor discrete device. Detail specification for type 3CD010 Low. Frequency and high. Power transistor 半导体分立器件 ３ｃｄ０１０型低频大功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/63-1995 |
Semiconductor discrete device. Detail specification for type 3CD020 Low. Frequency and high. Power transistor 半导体分立器件 ３ｃｄ０２０型低频大功率晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/62-1995 |
Semiconductor discrete device Detail specification for type 3DK406 high. Voltage and power switching transistor 半导体分立器件 ３ｄｋ４０６型高压功率开关晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/61-1995 |
Semiconductor discrete device. Detail specification for type 3DK6547 high. Voltage and power switching transistor 半导体分立器件 ３ｄｋ６５４７型高压功率开关晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/60-1995 |
Semiconductor discrete device. Detail specification for type 3DK40 power switching transistor 半导体分立器件 ３ｄｋ４０型功率开关晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/59-1995 |
Semiconductor discrete device. Detail specification for type 3DK39 power switching transistor 半导体分立器件 ３ｄｋ３９型功率开关晶体管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/58-1995 |
Semiconductor optoelectronic device. Detail specification for green light emitting diode for type GF413 半导体光电子器件 ｇｆ４１３型绿色发光二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50033/57-1995 |
Semiconductor optoelectronic device. Detail specification for red light emitting diode for type GF115 半导体光电子器件 ｇｆ115型红色发光二极管详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ/T 10626-1995 |
Method for determining impurities in gold wire for semiconductor lead bonding by ICP-AES 键合金丝中杂质素的ｉｃｐ－ａｅｓ测定方法 |
China Electronics
Standards conduct |
English PDF |
| JJG(SJ)04046-1995 |
(QC-13-type field effect transistor transconductance parameter tester test procedures) |
China Metrological
Standards conduct |
English PDF |
| SJ 50597/29-1994 |
Semiconductor integrated circuits Detail specification for type JC4585 of 4-Bit magnitude comparator 半导体集成电路 ｊｃ４５８５型ｃｍｏｓ４位数值比较器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/28-1994 |
Semiconductor integrated circuits Detail specification for type JC4504 of Hex TTL/CMOS to CMOS converters 半导体集成电路 ｊｃ４５０４型ｃｍｏｓ六ｔｔｌ／ｃｍｏｓ－ｃｍｏｓ电平转换器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/27-1994 |
Semiconductor integrated circuits Detail specification for type JC4067 CMOS single 16-channel analog switches 半导体集成电路 ｊｃ４０６７型ｃｍｏｓ１６选１模拟开关详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/26-1994 |
Semiconductor integrated circuits Detail specification for type JF14573 CMOS quad programmble operational amplifier 半导体集成电路 ｊｆ１４５７３型ｃｍｏｓ四程控运算放大器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/25-1994 |
Semiconductor integrated circuits Detail specification for type JF7650 CMOS operational amplifier with high accuracy 半导体集成电路 ｊｆ７６５０型ｃｍｏｓ高精度运算放大器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/24-1994 |
Semiconductor integrated circuits Detail specification of type JF3140 and JF3140A BiMOS operational amplifiers with high input impedence 半导体集成电路 ｊｆ３１４０、ｊｆ３１４０ａ型ｂｉｍ０ｓ高输入阻抗运算放大器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/23-1994 |
Semiconductor integrated circuits Detail specification for type JJ710 Voltage comparator 半导体集成电路 ｊｊ７１０型电压比较器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/22-1994 |
Semiconductor integrated circuits Detail specification of type JF709 and JF709A general operational amplifiers 半导体集成电路 ｊｆ７０９、ｊｆ７０９ａ型通用运算放大器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/21-1994 |
Semiconductor integrated circuits Detail specification of type JADC1001 general 8-bit binary output D/A converter for 半导体集成电路 ｊａｄｃ１００１型通用８位二进制输出ａ／ｄ转换器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/20-1994 |
Semiconductor integrated circuies Detail specification of type JDAC08, JDAC08A multiplying parellel 8-bit D/A converter 半导体集成电路 ｊｄａｃ０８、ｊｄａｃ０８ａ型乘法并行８位ｄ／ａ转换器详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/19-1994 |
Semiconductor integrated circuits Detail specification for type JT54LS136 LS-TTL quadruple exclusice-or gates with open-collector outputs 半导体集成电路 ｊｔ５４ｌｓ１３６型ｌｓ－ｔｔｌ四异或门（ｏｃ）详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/18-1994 |
Semiconductor integrated circuits Detail specification for type JT54LS33 LS--TTL quadruuple 2 -- Input NOR gates with open -- Collector outputs 半导体集成电路 ｊｔ５４ｌｓ３３型ｌｓ－ｔｔｌ四２输入或非门（ｏｃ）详细规范 |
China Electronics
Standards conduct |
English PDF |
| SJ 50597/17-1994 |
Semiconductor integrated circuuits. Detail specification for types JT54LS28, JT54LS37, JT54LS38, JT54LS40 LS-TTL Buffers 半导体集成电路 ｊｔ５４ｌｓ２８（３７、３８、４０）型ｌｓ－ｔｔｌ缓冲器详细规范 |
China Electronics
Standards conduct |
English PDF |
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