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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ 50033/133-1997 |
Semiconductor discrete devices. Detail specification for type SY5629-5665A tramsient voltage suppression diodes 半导体分立器件sy5629～5665a型瞬态电压抑制二极管详细规范 |
China Electronics
Standards conductor |
 English PDF |
| SJ 50033/132-1997 |
Semiconductor discrete devices. Detail specification for type 3DD260 low -- Frequency and high -- Power transistor 半导体分立器件3dd260型低频大功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/131-1997 |
Semiconductor discrete devices. Detail specification for type 3DD157 low -- Frequency and high -- Power transistor 半导体分立器件3dd157型低频大功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/130-1997 |
Semiconductor discrete devices. Detail specification for type 3DD159 low -- Frequency and high -- Power transistor 半导体分立器件3dd159型低频大功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/129-1997 |
Semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high -- Power transistor 半导体分立器件3dd155型低频大功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/128-1997 |
Semiconductor discrete devices. Detail specification for type 2DK15 SCHOTTKY ailicon switching rectifier diode 半导体分立器件2dk15型硅肖特基开关整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/127-1997 |
Semiconductor discrete devices. Detail specification for type 2DK14 SCHOTTKY ailicon switching rectifier diode 半导体分立器件2dk14型硅肖特基开关整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/126-1997 |
Semiconductor discrete device. Detail specification for type 2DK13 SCHOTTKY ailicon switching rectifier diode 半导体分立器件2dk13型硅肖特基开关整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/125-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN11~15 半导体分立器件pin11～15型硅pin二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/124-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN101~105 半导体分立器件pin101～105型硅pin大功率二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/123-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN62317 半导体分立器件pin62317型硅pin大功率二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/122-1997 |
Semiconductor discrete devices. Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3684～cs3687型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/121-1997 |
Semiconductor discrete devices. Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3458～cs3460型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/120-1997 |
Semiconductor discrete devices. Detail specification for type CS205 GaAs microwave power field effect transistor 半导体分立器件cs205型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/119-1997 |
Semiconductor discrete devices. Detail specification for type CS204 GaAs microwave power field effect transistor 半导体分立器件cs204型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/118-1997 |
Semiconductor discrete devices. Detail specification for type 2EK31 GaAs switching diode 半导体分立器件2ek31型砷化镓开关二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/117-1997 |
Semiconductor discrete devices. Detail specification for type 2CK38 silicon large current switch diode 半导体分立器件2ck38型硅大电流开关二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/116-1997 |
Semiconductor discrete devices. Detail specification for type 2CK29 silicon large current switch diode 半导体分立器件2ck29型硅大电流开关二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/115-1997 |
Semiconductor discrete devices. Detail specification for type 2CK28 silicon large current switch diode 半导体分立器件2ck28型硅大电流开关二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20642-1997 |
Semiconductor opto-electronic module. General specification for 半导体光电模块总规范 |
China Electronics
Standards conductor |
English PDF |
| SJ/T 11067-1996 |
Commonly used terms for semiconductor photoelectric materials and pyroelectricmaterials in infrared detecting materials 红外探测材料中半导体光电材料和热释电材料常用名词术语 |
China Electronics
Standards conductor |
English PDF |
| SJ 51420/1-1996 |
Detail specification of type D ceramic DIP for semiconductor integrated circuits 半导体集成电路d型陶瓷双列外壳详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/42-1996 |
Semiconductor integrated circuits. Detail specification for Types JW79L06, JW79L09, JW79L12, JW79L15, JW79L18 and JW79L24 three terminal fixed output negative voltage regulators 半导体集成电路 ｊｗ７９ｌ０５（０６、０９、１２、１５、１８、２４）型三端固定负输出电压调整器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/41-1996 |
Semiconductor integrated circuits. Detail specification for Type JE10531 ECL dual D master-slave flip-flop 半导体集成电路 ｊｅ１０５３１型ｅｃｌ双ｄ主从触发器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/40-1996 |
Semiconductor integrated circuits Detail specification for type JC54HC75, JC54HC259, JC54HC373, JC54HC533, JC54HC573 HCMOS latches. 半导体集成电路 jc54hc75、jc54hc259、jc54hc373、jc54hc533和jc54hc573型hcmos锁存器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/39-1996 |
Semiconductor integrated circuits Detail specification for type JC54HC221 HCMOS dual monostable multivibrators with schmitt triggers inputs 半导体集成电路 jc54hc221型hcmos双单稳态触发器（斯密特触发输入）详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/114-1996 |
Semiconductor discrete device. Detail specification for type GD3283Y position sensitive detector 半导体光电子器件 ｇｄ３２８３ｙ型位敏探测器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/113-1996 |
Semiconductor discrete device. Detail specification for type GD3252Y photodiodes 半导体光电子器件 ｇｄ３２５２ｙ型光电二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/112-1996 |
Semiconductor discrete device. Detail specification for type GD3251Y photodiodes 半导体光电子器件 ｇｄ３２５１ｙ型光电二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/111-1996 |
Semiconductor optoelectronic devices. Detail specification for type GT16 Si.NPN phototransistor 半导体光电子器件 ｇｔ１６型硅ｎｐｎ光电晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/110-1996 |
Semiconductor optoelectronic devices. Detail specification for type GR9413 infrared light emitting diode 半导体光电子器件gr9413型红外发射二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/109-1996 |
Semiconductor discrete device. Detail specification for type GJ9032T and GJ9034T semiconductor laser diodes 半导体光电子器件gj9031t、gj9032t和gj9034t型 半导体激光二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/108-1996 |
Semiconductor discrete device. Detail specification for Gunn diodes for type 2EY5671, 2EY5672 半导体分立器件 ２ｅｙ５６７１、２ｅｙ５６７２型体效应二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/107-1996 |
Semiconductor discrete device. Detail specification for Gunn diodes for type 2EY621, 2EY622, 2EY623 半导体分立器件 ２ｅｙ６２１、２ｅｙ６２２、２ｅｙ６２３型体效应二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/106-1996 |
Semiconductor discrete device. Detail specification for type CS203 GaAs microwave low noise field effect transistor 半导体分立器件 ｃｓ２０３型砷化镓微波低噪声场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/105-1996 |
Semiconductor discrete device Detail specification for type 3DK404 power switching transistor 半导体分立器件 ３ｄｋ４０４型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/104-1996 |
Semiconductor discrete device. Detail specification for type 3DK002 power switching transistor 半导体分立器件 ３ｄｋ００２型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/103-1996 |
Semiconductor discrete device. Detail specification for type 3DA89 high-frequency power transistor 半导体分立器件 ３ｄａ８９型高频功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ/T 10696-1996 |
Semiconductor discrete device Detail specification for type QL50 in use for automotive nine diodes bridge rectifying modules 半导体分立器件 ｑｌ５０型机动车用九管桥式整流组件详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/38-1995 |
Semiconductor integrated circuits. Detail specification for Type JM2148H NMOS 1024*4 bit static random access memory 半导体集成电路 ｊｍ２１４８ｈ型ｎｍｏｓ１０２４×４位静态随机存取存储器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/37-1995 |
Semiconductor integrated circuits. Detail specification for Type JSC145152 CMOS parallel input phase-locked loop frequency synthesizer 半导体集成电路 ｊｓｃ１４５１５２型ｃｍｏｓ并行输入锁相环频率合成器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/36-1995 |
Semiconductor integrated circuits. Detail specification for Type JC54HC08, JC54HC11, JC54HC32, JC54HC86 HCMOS gates 半导体集成电路 ｊｃ５４ｈｃ０８、ｊｃ５４ｈｃ１１、ｊｃ５４ｈｃ３２、ｊｃ５４ｈｃ８６型ｈｃｍｏｓ门电路详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/35-1995 |
Semiconductor integrated circuits. Detail specification for Type JC4520 CMOS dual 4-bit binary up-counters 半导体集成电路 ｊｃ４５２０型ｃｍｏｓ双４位二进制同步计数器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/34-1995 |
Semiconductor integrated circuits. Detail specification for Types JC4085, JC4086, JC4070, JC4077 CMOS gates 半导体集成电路 ｊｃ４０８５、ｊｃ４０８６、ｊｃ４０７０、ｊｃ４０７７型ｃｍｏｓ门电路详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/99-1995 |
Semiconductor discrete device. Detail specification for o/G double colour light emitting diode for type GF511 半导体光电子器件 ｇｆ５１１型橙／绿双色发光二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/98-1995 |
Semiconductor discrete device. Detail specification for type 2CJ4211 and 2CJ4212 step recovery diodes 半导体分立器件 ２ｃｊ４２１１、２ｃｊ４２１２型阶跃恢复二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/97-1995 |
Semiconductor discrete device. Detail specification for type 2CJ4011, 2CJ4012, 2CJ4021 and 2CJ4022 step recovery diodes 半导体分立器件 ２ｃｊ４０１１、２ｃｊ４０１２、２ｃｊ４０２１、２ｃｊ４０２２型阶跃恢复二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 ３ｄｇ２１６型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50923/2-1995 |
Detail specification for types G2-01B-M1, G2-01B-Z1 metal case for semiconductor photosensitive devices ｇ２－０１ｂ－ｍ１型和ｇ２－０１ｂ－ｚ１型半导体光敏器件金属外壳详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50923/1-1995 |
Detail specification for types A6 -- 02A -- M2/Z2 and A6 -- 01B --M1/Z1 metal case for semiconductor photocouplers ａ６－０２ａ－ｍ２／ｚ２和ａ６－０１ｂ－ｍ１／ｚ１型半导体光耦合器金属外壳详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/101-1995 |
Detail specification for semiconductor laser diode modules for type GJ1325 ｇｊ１３２５型半导体激光二极管组件详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/100-1995 |
Semiconductor discrete device. Detail specification for type 2CJ60 step recovery diodes 半导体分立器件 ２ｃｊ６０型阶跃恢复二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| DL/T 602-1996 |
Erection and acceptance regulations for overhead distribution lines with insulated conductors 架空绝缘配电线路施工及验收规程 |
China Electricity & Power
Standards conductor |
English PDF |
| DL/T 601-1996 |
Design technique requlations for overhead distribution lines with insulated conductors 架空绝缘配电线路设计技术规程 |
China Electricity & Power
Standards conductor |
English PDF |
| YD/T 840-1996 |
Telephone subscriber indoor copper-conductor wires 电话网用户铜芯室内线 |
China Telecommunication
Standards conductor |
English PDF |
| SJ 50597/33-1995 |
Semiconductor integrated circuits. Detail specification for Type JB200 CMOS dual SPST analog switch 半导体集成电路 ｊｂ２００型ｃｍｏｓ双路单刀单掷模拟开关详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/32-1995 |
Semiconductor integrated circuits. Detail specification for Type JW4805, JW4810 and JW4812 three terminal low drop fixed output positive voltage regulators 半导体集成电路 ｊｗ４８０５、ｊｗ４８１０、ｊｗ４８１２型三端低压差固定正输出电压调整器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/31-1995 |
Semiconductor integrated circuits. Detail specification for Type JC4007 CMOS dual somplementary pair plus inverter and Type JC4048 CMOS multi function expandable 8 input gate 半导体集成电路 ｊｃ４００７型ｃｍｏｓ双互补对及反相器和ｊｃ４０４８型ｃｍｏｓ８输入多功能门（可扩展）详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/92-1995 |
Semiconductor discrete device. Detail specification for type 3CD100 low-frequency and high-power transistor 半导体分立器件 ３ｃｄ１００型低频大功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/91-1995 |
Semiconductor discrete device. Detail specification for type 3CD030 low-fyequency and high-power transistor 半导体分立器件 ３ｃｄ０３０型低频大功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/90-1995 |
Semiconductor discrete device. Detail specification for type 3DK106 NPN silicon low -- Power switching transistor 半导体分立器件 ３ｄｋ１０６型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/89-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ６７６8and ＣＳ６７70 silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ６７６８和ｃｓ６７７０型硅ｎ沟道增强型场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/88-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ６７６０and ＣＳ６７６２ silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ６７６０和ｃｓ６７６２型硅ｎ沟道增强型场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/87-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ４０９１~ＣＳ４０９３ silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ４０９１～ｃｓ４０９３型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/86-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ５１１４~ＣＳ５１１６ silicon P-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ５１１４～ｃｓ５１１６型硅ｐ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/85-1995 |
Semiconductor discrete device. Detail specification for type CS141 silicon N-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１４１型硅ｎ沟道ｍｏｓ耗尽型场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/84-1995 |
Semiconductor discrete device. Detail specification for type CS140 silicon N-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１４０型硅ｎ沟道ｍｏｓ耗尽型场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/83-1995 |
Semiconductor discrete device. Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１３９型硅ｐ沟道ｍｏｓ增强型场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/82-1995 |
Semiconductor discrete device. Detail specification for type 3DK100 NPN silicon low-power switching transistor 半导体分立器件 ３ｄｋ１００型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/81-1995 |
Semiconductor discrete devices. Detail specification for type CS0524 GaAs microwave FET 半导体分立器件 ｃｓ０５２４型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/80-1995 |
Semiconductor discrete devices. Detail specification for type CS0513 GaAs microwave FET 半导体分立器件 ｃｓ０５１３型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/79-1995 |
Semiconductor discrete devices. Detail specification for type CS0536 GaAs microwave power FET 半导体分立器件 ｃｓ０５３６型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/78-1995 |
Semiconductor discrete devices. Detail specification for type CS0464 GaAs microwave FET 半导体分立器件 ｃｓ０４６４型砷化镓微波场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/77-1995 |
Semiconductor discrete devices. Detail specification for type 3DA331 Silicon microwave power tansistor 半导体分立器件 ３ｄａ３３１型硅微波功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/76-1995 |
Semiconductor discrete devices. Detail specification for type 3DG218 Silicon microwave low-noise tansistor 半导体分立器件 ３ｄｇ２１８型硅微波低噪声晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor 半导体分立器件 ３ｄｇ１３５型硅超高频小功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/74-1995 |
Semiconductor discrete device. Detail specification for type 3DA325 silicon microwave power tansistor 半导体分立器件 ３ｄａ３２５型硅微波功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/73-1995 |
Semiconductor discrete device. Detail specification for type QL74 silicon single phase bridge rectifier 半导体分立器件 ｑｌ７４型硅单相桥式整流器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/72-1995 |
Semiconductor discrete device. Detail specification for type PIN323 series for PIN diode 半导体分立器件 ｐｉｎ３２３型ｐｉｎ二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/71-1995 |
Semiconductor discrete device Detail specification for type PIN342 series for PIN diode 半导体分立器件 ｐｉｎ３４２型ｐｉｎ二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/70-1995 |
Semiconductor discrete device. Detail specification for type PIN35 series for PIN diode 半导体分立器件 ｐｉｎ３５系列ｐｉｎ二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/69-1995 |
Semiconductor discrete device. Detail specification for type PIN 30 series for PIN diode 半导体分立器件 ｐｉｎ３０系列ｐｉｎ二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/68-1995 |
Semiconductor discrete device. Detail specification for type BT51 NPN silicon small power difference matchen -- Pair transistor 半导体分立器件 ｂｔ５１型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 51524.1-1995 |
Cables, radio frequency, corrugated tube outer conductor, polyethylene helix dielectric, type SDY-50-40-51. Detail specification sdy-50-40-51型螺旋聚乙烯绝缘皱纹管外导体射频电缆详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/67-1995 |
Semiconductor discrete device. Detail specification for type 3CD103 High. Voltage low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１０３型高压低频大功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/66-1995 |
Semiconductor discrete device. Detail specification for type 3CD880 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ８８０型低频大功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/65-1995 |
Semiconductor discrete device. Detail specification for type 3DD175 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１７５型低频大功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/64-1995 |
Semiconductor discrete device. Detail specification for type 3CD010 Low. Frequency and high. Power transistor 半导体分立器件 ３ｃｄ０１０型低频大功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/63-1995 |
Semiconductor discrete device. Detail specification for type 3CD020 Low. Frequency and high. Power transistor 半导体分立器件 ３ｃｄ０２０型低频大功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/62-1995 |
Semiconductor discrete device Detail specification for type 3DK406 high. Voltage and power switching transistor 半导体分立器件 ３ｄｋ４０６型高压功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/61-1995 |
Semiconductor discrete device. Detail specification for type 3DK6547 high. Voltage and power switching transistor 半导体分立器件 ３ｄｋ６５４７型高压功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/60-1995 |
Semiconductor discrete device. Detail specification for type 3DK40 power switching transistor 半导体分立器件 ３ｄｋ４０型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/59-1995 |
Semiconductor discrete device. Detail specification for type 3DK39 power switching transistor 半导体分立器件 ３ｄｋ３９型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/58-1995 |
Semiconductor optoelectronic device. Detail specification for green light emitting diode for type GF413 半导体光电子器件 ｇｆ４１３型绿色发光二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/57-1995 |
Semiconductor optoelectronic device. Detail specification for red light emitting diode for type GF115 半导体光电子器件 ｇｆ115型红色发光二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ/T 10626-1995 |
Method for determining impurities in gold wire for semiconductor lead bonding by ICP-AES 键合金丝中杂质素的ｉｃｐ－ａｅｓ测定方法 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/29-1994 |
Semiconductor integrated circuits Detail specification for type JC4585 of 4-Bit magnitude comparator 半导体集成电路 ｊｃ４５８５型ｃｍｏｓ４位数值比较器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/28-1994 |
Semiconductor integrated circuits Detail specification for type JC4504 of Hex TTL/CMOS to CMOS converters 半导体集成电路 ｊｃ４５０４型ｃｍｏｓ六ｔｔｌ／ｃｍｏｓ－ｃｍｏｓ电平转换器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/27-1994 |
Semiconductor integrated circuits Detail specification for type JC4067 CMOS single 16-channel analog switches 半导体集成电路 ｊｃ４０６７型ｃｍｏｓ１６选１模拟开关详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/26-1994 |
Semiconductor integrated circuits Detail specification for type JF14573 CMOS quad programmble operational amplifier 半导体集成电路 ｊｆ１４５７３型ｃｍｏｓ四程控运算放大器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/25-1994 |
Semiconductor integrated circuits Detail specification for type JF7650 CMOS operational amplifier with high accuracy 半导体集成电路 ｊｆ７６５０型ｃｍｏｓ高精度运算放大器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/24-1994 |
Semiconductor integrated circuits Detail specification of type JF3140 and JF3140A BiMOS operational amplifiers with high input impedence 半导体集成电路 ｊｆ３１４０、ｊｆ３１４０ａ型ｂｉｍ０ｓ高输入阻抗运算放大器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/23-1994 |
Semiconductor integrated circuits Detail specification for type JJ710 Voltage comparator 半导体集成电路 ｊｊ７１０型电压比较器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/22-1994 |
Semiconductor integrated circuits Detail specification of type JF709 and JF709A general operational amplifiers 半导体集成电路 ｊｆ７０９、ｊｆ７０９ａ型通用运算放大器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/21-1994 |
Semiconductor integrated circuits Detail specification of type JADC1001 general 8-bit binary output D/A converter for 半导体集成电路 ｊａｄｃ１００１型通用８位二进制输出ａ／ｄ转换器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/20-1994 |
Semiconductor integrated circuies Detail specification of type JDAC08, JDAC08A multiplying parellel 8-bit D/A converter 半导体集成电路 ｊｄａｃ０８、ｊｄａｃ０８ａ型乘法并行８位ｄ／ａ转换器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/19-1994 |
Semiconductor integrated circuits Detail specification for type JT54LS136 LS-TTL quadruple exclusice-or gates with open-collector outputs 半导体集成电路 ｊｔ５４ｌｓ１３６型ｌｓ－ｔｔｌ四异或门（ｏｃ）详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/18-1994 |
Semiconductor integrated circuits Detail specification for type JT54LS33 LS--TTL quadruuple 2 -- Input NOR gates with open -- Collector outputs 半导体集成电路 ｊｔ５４ｌｓ３３型ｌｓ－ｔｔｌ四２输入或非门（ｏｃ）详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/17-1994 |
Semiconductor integrated circuuits. Detail specification for types JT54LS28, JT54LS37, JT54LS38, JT54LS40 LS-TTL Buffers 半导体集成电路 ｊｔ５４ｌｓ２８（３７、３８、４０）型ｌｓ－ｔｔｌ缓冲器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/16-1994 |
Semiconductor integrated circuits. Detail specification for types JW137, JW137M and JW137L three teminal adjustabale negative voltage regulations 半导体集成电路 ｊｗ１３７、ｊｗ１３７ｍ、ｊｗ１３７ｌ型三端可调负输出电压调整器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597/15-1994 |
Semiconductor integrated circuits. Detail specification for type JT54LS247 BCD-to-seven segment decoders/drivers of LS-TTL 半导体集成电路 ｊｔ５４ｌｓ２４７型ｌｓ－ｔｔｌ电路ｂｃｄ－七段译码器／驱动器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597.9-1994 |
Detail specification for type Jμ80286-6, Jμ 80286-8, Jμ 80286-10 coprocessors of semiconductor integrated circuits 半导体集成电路 ｊμ８０２８７－６、ｊμ８０２８７－８、ｊμ８０２８７－１０型协处理器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597.8-1994 |
Detail specification for type Jμ 80286-6, Jμ 80286-8, Jμ80286-10 microprocessors of semiconductor integrated circuits 半导体集成电路 ｊμ８０２８６－６、ｊμ８０２８６－８、ｊμ８０２８６－１０型微处理器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597.7-1994 |
Detail specification for types JT54S74, JT54S175 S-TTL, flip-flops of semiconductor integrated circuits 半导体集成电路 ｊｔ５４ｓ７４和ｊｔ５４ｓ１７５型ｓ－ｔｔｌ触发器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597.5-1994 |
Detail specification for types JF725 and JF725A high accuracy operational amplifiers of semiconductor integrated circuits 半导体集成电路 ｊｆ７２５、ｊｆ７２５ａ型高精度运算放大器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597.3-1994 |
Detail spcification for types JH009 and JH2010 HTL NAND gate of semiconductor integerated circuits 半导体集成电路 ｊｈ００９、ｊｈ２０１０型ｈｔｌ与非门详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597.2-1994 |
Detail specification for type JH2014 HTL flip-flop of semiconductor integrated circuits 半导体集成电路 ｊｈ２０１４型ｈｔｌ型触发器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597.12-1994 |
Detail specification for type Jμ 320C25-40, Jμ 320C25-50 digital signal processors of semiconductor integrated circuits 半导体集成电路 ｊμ３２０ｃ２５－４０、ｊμ３２０ｃ２５－５０型数字信号处理器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597.1-1994 |
Detail specification for type JT54LS85 LS-TTL 4bit magnitude comparator of semiconductor integrated circuit 半导体集成电路 ｊｔ５４ｌｓ８５型ｌｓ－ｔｔｌ四位数值比较器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597.11-1994 |
Detail specification for type Jμ82289 bus arbiter of semiconductor integrated circuits 半导体集成电路 ｊμ８２２８９型总线仲裁器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50597.10-1994 |
pecification for type Jμ82258-6, Jμ 82258-8 direct memory access (DMA) controllers of semiconductor integrated circuits 半导体集成电路 ｊμ８２２５８－６、ｊμ８２２５８－８型ｄｍａ控制器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/9-1994 |
Discrete semiconductor devices Detailed specifications for 3DK206 power switching transistors 半导体分立器件 ３ｄｋ２０６型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/8-1994 |
Discrete semiconductor devices Detailed specifications for 3DK12 power switching transistors 半导体分立器件 ３ｄｋ２０５型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/6-1994 |
Semiconductor discrete device. Detail specification for semiconductor light green emitting diodes for type GF 411 of GP and GT classes 半导体分立器件 ｇｐ和ｇｔ级ｇｆ４１１型半导体绿色发光二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/5-1994 |
Semiconductor discrete device. Detail specification for semiconductor yellow light emmitting diodes for type GF311 of GP and GT classes 半导体分立器件 ｇｐ和ｇｔ级ｇｆ３１１型半导体黄色发光二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/42-1994 |
Semiconductor discrete device. Detail specification for type CS0467 GaAs microwave FET 半导体分立器件 ｃｓ０４６７型砷化镓微波场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/4-1994 |
Semiconductor discrete device. Detail specification for semiconductor red light emitting diodes for type GF 111 of GP and GT classes 半导体分立器件 ｇｐ和ｇｔ级ｇｆ１１１型半导体红色发光二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/41-1994 |
Detail specification for type GR9414 semiconductor infrared light eitting diode ｇｒ９４１４型半导体红外发射二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/39-1994 |
Semiconductor discrete device. Detail specification for type 2CZ106 silicon switching rectifier diode 半导体分立器件 ２ｃｚ１０６型开关整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/38-1994 |
Semiconductor discrete device. Detail specification for type CS4856~CS4861 silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ４８５６～ｃｓ４８６１型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/37-1994 |
Semiconductor discrete device. Detail specification for type 3DD164 power transistor 半导体分立器件 ３ｄｄ１６４型功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/36-1994 |
Semiconductor discrete device. Detail specification for type 3CD050 power transistor 半导体分立器件 ３ｃｄ０５０型功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/35-1994 |
Detail specification for type GH30 semiconductor high speed optocoupler ｇｈ３０型半导体高速光耦合器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/34-1994 |
Semiconductor discrete device. Detail specification for type FH129 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１２９型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/33-1994 |
Semiconductor discrete device. Detail specification for type FH121 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１２１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/32-1994 |
Semiconductor discrete device. Detail specification for type 3DK312 power switching transistor 半导体分立器件 ３ｄｋ３１２型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/3-1994 |
Semiconductor discrete device. Detail specification for semiconductor opto-couplers for type GH21, GH22 and GH23 of GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｇｈ２１、ｇｈ２２和ｇｈ２３型半导体光耦合器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/31-1994 |
Semiconductor discrete device. Detail specification for type FH101 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１０１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/30-1994 |
Semiconductor discrete device. Detail specification for type 3DD155 power transistor 半导体分立器件 ３ｄｄ１５５型功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/29-1994 |
Semiconductor discrete device. Detail specification for GaAs high-speed switching assembly for type EK20 半导体分立器件 ｅｋ２０型砷化镓高速开关组件详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/28-1994 |
Semiconductor discrete device. Detail specification stripline mixer diodes for 2CV334, 2CV3338 半导体分立器件 ２ｃｖ３３４、２ｃｖ３３３８型微带混频二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/27-1994 |
Semiconductor discrete device. Detail specification for GaAs varactor diodes for 2EC600 series 半导体分立器件 ２ｅｃ６００系列砷化镓变容二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/26-1994 |
Semiconductor discrete device. Detail specification for type 2CW1006~2CW1015 silicon voltage -- Regulator diode 半导体分立器件 ２ｃｗ１００６～２ｃｗ１０１５型硅电压调整二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/25-1994 |
Semiconductor discrete device. Detail specification for type 2CW1001~2CW1005 silicon voltage -- Regulator diode 半导体分立器件 ２ｃｗ１００１～２ｃｗ１００５型硅电压调整二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/24-1994 |
Discrete semiconductor devices Detailed specifications for 3DK310 power switching transistors 半导体分立器件 ３ｄｋ３１０型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/23-1994 |
Discrete semiconductor devices Detailed specifications for 3DK309 power switching transistors 半导体分立器件 ３ｄｋ３０９型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/22-1994 |
Semiconductor discrete device. Detail specification for silicon tuning varactor diode for type 2CC51E 半导体分立器件 ２ｃｃ５１ｅ型硅电调变容二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/2-1994 |
Semiconductor discret device. Detail specification for type 3CK2904, 3CK2904A, 3CK2905 and 3CK2905A PNP silicon cow-power switching transistor 半导体分立器件 ３ｃｋ２９０４（２９０４ａ、２９０５和２９０５ａ）型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/21-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ75 半导体分立器件 ２ｃｚ７５型硅开关整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/20-1994 |
Semiconductor discrete device. Detail specification for silicon rectifier diode for type 2CZ101 半导体分立器件 ２ｃｚ１０１型硅开关整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/19-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ74 半导体分立器件 ２ｃｚ７４型硅开关整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/18-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ73 半导体分立器件 ２ｃｚ７３型硅开关整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/17-1994 |
Discrete semiconductor devices Detailed specifications for 3DK308 power switching transistors 半导体分立器件 ３ｄｋ３０８型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/16-1994 |
Discrete semiconductor devices Detailed specifications for 3DK307 power switching transistors 半导体分立器件 ３ｄｋ３０７型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/15-1994 |
Discrete semiconductor devices Detailed specifications for 3DK306 power switching transistors 半导体分立器件 ３ｄｋ３０６型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/14-1994 |
Discrete semiconductor devices Detailed specifications for 3DK305 power switching transistors 半导体分立器件 ３ｄｋ３０５型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/13-1994 |
Discrete semiconductor devices Detailed specifications for 3DK210 power switching transistors 半导体分立器件 ３ｄｋ２１０型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/12-1994 |
Discrete semiconductor devices Detailed specifications for 3DK209 power switching transistors 半导体分立器件 ３ｄｋ２０９型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/1-1994 |
Semiconductor discrete device. Detail specification for type 3DA150 high frequency and power transistor 半导体分立器件 ３ｄａ１５０型高频功率晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/11-1994 |
Discrete semiconductor devices Detailed specifications for 3DK208 power switching transistors 半导体分立器件 ３ｄｋ２０８型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033/10-1994 |
Discrete semiconductor devices Detailed specifications for 3DK207 power switching transistors 半导体分立器件 ３ｄｋ２０７型功率开关晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.56-1994 |
Semiconductor discrete device. Detail specification for type 2CK85 silicon switching diode 半导体分立器件 ２ｃｋ８５型硅开关二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.55-1994 |
Semiconductor discrete device. Detail specification for type 2CK82 silicon switching diode 半导体分立器件 ２ｃｋ８２型硅开关二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.54-1994 |
Semiconductor discrete device. Detail specification for type CS0532 GaAs microwave Power field effect transistor 半导体分立器件 ｃｓ０５３２型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.53-1994 |
Semiconductor discrete device. Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor 半导体分立器件 ｃｓ０５３０、ｃｓ０５３１型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.52-1994 |
Semiconductor discrete device. Detail specification for type CS0529 GaAs microwave Power field effect transistor 半导体分立器件 ｃｓ０５２９型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.51-1994 |
Semiconductor discrete devices. Detail specification for type CS0558 GaAs microwave dual gate FET 半导体分立器件 ｃｓ０５５８型砷化镓微波双栅场效应晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.50-1994 |
Semiconductor discrete device. Detail specification for type QL73 silicon three phase full wave bridge rectifier 半导体分立器件 ｑｌ７３型硅三相桥式整流器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.49-1994 |
Semiconductor discrete device. Detail specification for step recovery diodes for 2CJ4220 series 半导体分立器件 ２ｃｊ４２２０系列阶跃二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.48-1994 |
Semiconductor discrete device. Detail specification for type 2DV8CP silicon microwave detector diode 半导体分立器件 ２ｄｖ８ｃｐ型硅微波检波二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.47-1994 |
Semiconductor discrete device. Detail specification for type 2CZ117 silicon rectifier diode 半导体分立器件 ２ｃｚ１１７型硅整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.46-1994 |
Semiconductor discrete device. Detail specification for type 2CZ59 silicon rectifier diode 半导体分立器件 ２ｃｚ５９型硅整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.45-1994 |
Semiconductor discrete device. Detail specification for type 2CZ58 silicon rectifier diode 半导体分立器件 ２ｃｚ５８型硅整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.44-1994 |
Semiconductor discrete device. Detail specification for type 2CZ105 silicon witching rectifier diode 半导体分立器件 ２ｃｚ１０５型硅开关整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.43-1994 |
Semiconductor discrete device. Detail specification for type 2CZ104 silicon switching rectifier diode 半导体分立器件 ２ｃｚ１０４型硅开关整流二极管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 50033.40-1994 |
Detail specification for type GT11 semiconductor sililcon NPN photo-transistor gt11型半导体硅npn光敏晶体管详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ/T 10482-1994 |
Test method for characterizing semiconductor deep levels by transient capacitance techniques 半导体中深能级的瞬态电容测试方法 |
China Electronics
Standards conductor |
English PDF |
| YD/T 701-1993 |
Test method for semiconductor laser diode assembly 半导体激光二极管组件测试方法 |
China Telecommunication
Standards conductor |
English PDF |
| SJ/T 10436-1993 |
Blank detail specification for the semiconductor resistance strain gage Assessment level E 半导体电阻应变计空白详细规范 评定水平ｅ（可供认证用） |
China Electronics
Standards conductor |
English PDF |
| SJ/T 10435-1993 |
General specification for the semiconductor resistance strain gage 半导体电阻应变计总规范（可供认证用） |
China Electronics
Standards conductor |
English PDF |
| SJ/T 10424-1993 |
Glass power for passivation packaging for use in semiconductor devices 半导体器件用钝化封装玻璃粉 |
China Electronics
Standards conductor |
English PDF |
| SJ/T 10455-1993 |
Copper conductor pastc for thick film hybrid integrated circuits 厚膜混合集成电路用铜导体浆料 |
China Electronics
Standards conductor |
English PDF |
| SJ 20305-1993 |
Detail specification for types JW723 multi-terminal adjustable precision voltage regulator of semiconductor integrated circuits 半导体集成电路ｊｗ７２３型多端可调精密稳压器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20304-1993 |
Detail specification for types JW7905, JW7906, JW7909, JW7912, JW7915, JW7918, JW7924, JM79M05, JW79M06, JW79M09, JW79M12, JW79M15, JW79M18 and JW79M24 three-terminal fixed negative output voltage regulators of semiconductor integrated circuits 半导体集成电路ｊｗ７９０５、ｊｗ７９ｍ０５等型三端固定负输出稳压器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20303-1993 |
Detail specification for types JFOP07A, JFOP07, JF714, JFOP27A and JF0P37A low offset operational amplifiers of semiconductor integrated circuits 半导体集成电路 ｊｆｏｐ０７（０７ａ、２７ａ、３７ａ）、ｊｆ７１４型低失调运算放大器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20302-1993 |
Detail specification for types JW1930-12 JW1930-15 and JW1932-5 three terminal drop-out fixed positive voltage regulators of semiconductor integrated circuits 半导体集成电路 ｊｗ１９３０－１２、ｊｗ１９３０－１５、ｊｗ１９３２－５型三端低压差固定正输出稳压器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20301-1993 |
Detail specification for types JF158 and JF158A input operational amplifiers of semiconductor integrated circuits 半导体集成电路ｊｆ１５８、ｊｆ１５８ａ型双运算放大器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20300-1993 |
Detail specification for types JF155, JF156, JF157, JF155A, JF156A and 157A JFET input operational amplifiers of semiconductor integrate circuits 半导体集成电路 ｊｆ１５５（１５６、１５７、１５５ａ、１５６ａ、１５７ａ）型ｊｆｅｔ输入运算放大器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20299-1993 |
Detail specification for type JF147 JFET input operational amplifier of semiconductor integrated circuits 半导体集成电路 ｊｆ１４７型ｊｆｅｔ输入运算放大器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20298-1993 |
Detail specification for types JB555 and JB556 precision timers of semiconductor integrated circuits 半导体集成电路 ｊｂ５５５、ｊｂ５５６型时基电路详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20297-1993 |
Detail specification for types JW117, JW117M and JW117L three terminal adjustable positive voltage regulators of semiconductor integrated circuits 半导体集成电路 ｊｗ１１７、ｊｗ１１７ｍ、ｊｗ１１７ｌ型三端可调正输出稳压器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20295-1993 |
Detail specification for type JT4344 phase-frequency detector semiconductor integrated circuits 半导体集成电路 ｊｔ４３４４型鉴频／鉴相器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20294-1993 |
Detail specification for type JW1524, JW1525, JW1525A, JW1526 and JW1527A pulse -- width modulator of semiconductor integrated circuits 半导体集成电路 ｊｗ１５２４（１５２５、１５２５ａ、１５２６、１５２７、１５２７ａ）型脉宽调制器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20293-1993 |
detail specification for types JT54LS243, JT54LS245 of bus transceivers with three-state outputs LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls243、jt54ls245型ls-ttl双向总线发送器/接收器（3s）详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20292-1993 |
detail specification for JT54LS151, JT54LS153, JT54LS157, JT54LS158, JT54LS251, JT54LS253, JT54LS257 types of LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls151（153、157、158、251、253、257）型ls-ttl数据选择器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20291-1993 |
detail specification for JT54LS279, JT54LS375 types latches of LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls279、jt54ls375型ls-ttl锁存器详细规范 |
China Electronics
Standards conductor |
English PDF |
| SJ 20290-1993 |
detail specification for JT54LS164, JT54LS166, JT54LS194, JT54LS195 types shift registers of LS-TTL semiconductor integrated circuits 半导体集成电路 jt54ls164、jt54ls166、jt54ls194、jt54ls195型ls-ttl移位寄存器详细规范 |
China Electronics
Standards conductor |
English PDF |
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