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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ 50033/168-2004 |
Semiconductor discrete devices. Detail specification for type 3DA509 silicon microwave pulse power transistor 半导体分立器件3da509型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards silicon, |
 English PDF |
| SJ 50033/167-2004 |
Semiconductor discrete devices. Detail specification for type 3DA508 silicon microwave pulse power transistor 半导体分立器件3da508型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/166-2004 |
Semiconductor discrete devices. Detail specification for type 3DA507 silicon microwave pulse power transistor 半导体分立器件3da507型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| YY 0484-2004 |
Implants for surgery. Two-part addition-cure silicone elastomers 外科植入物 双组分加成型硫化硅橡胶 |
China Medicine & Medical Device
Standards silicon, |
English PDF |
| SN/T 1427-2004 |
Determination of silicon, iron, phosphorus in manganese metal. Inductively coupled plasma atomic emission spectrometry 金属锰中硅、铁、磷含量的测定电感耦合等离子体原子发射光谱法(icp-aes) |
China Import Export Inspection
Standards silicon, |
English PDF |
| JT/T 496-2004 |
High-density polyethylene silicon duct for highway communication conduit 公路地下通信管道 高密度聚乙烯硅芯塑料管 |
China Highway & Transportation
Standards silicon, |
English PDF |
| HG/T 3375-2003 |
Organosilicon electrical insulating baking varnish 有机硅烘干绝缘漆 |
China Chemical Industry
Standards silicon, |
English PDF |
| HG/T 3362-2003 |
Aluminium powder organosilicon high-temperature resistant baking paint(two-package) 铝粉有机硅烘干耐热漆(双组分) |
China Chemical Industry
Standards silicon, |
English PDF |
| NY/T 797-2004 |
silicon fertilizer {译} 硅肥 |
China Agriculture Industry
Standards silicon, |
English PDF |
| SJ 50033/162-2003 |
Semiconductor discrete device. Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes 半导体分立器件2cw1022型硅双向电压调整二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| JC/T 902-2002 |
Silicone hydrophobic agent for construction surfaces 建筑表面用有机硅防水剂 |
China Building Materials
Standards silicon, |
English PDF |
| SJ 20858-2002 |
Measuring methods for electrical parameters of silicon carbide single crystal material 碳化硅单晶材料电学参数测试方法 |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 10675-2002 |
silicon dioxide micropowder for electronic and electrical equipment industry 电子及电器工业用二氧化硅微粉 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/161-2002 |
Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2CW210~251 半导体分立器件 2cw210-251型硅电压调整二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/160-2002 |
Semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power transistor 半导体分立器件 3dg122型硅超高频小功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/159-2002 |
Semiconductor discrete devices. Detail specification for type 3DG142 silicon UHF low-noise transistor 半导体分立器件 3dg142型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/158-2002 |
Semiconductor discrete devices. Detail specification for type 3DG44 silicon UHF low-noise transistor 半导体分立器件 3dg44型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/157-2002 |
Semiconductor discrete devices. Detail specification for type 3DA506 silicon microwave pulse power transistor 半导体分立器件 3da506型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/156-2002 |
Semiconductor discrete devices. Detail specification for type 3DA505 silicon microwave pulse power transistor 半导体分立器件 3da505型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/154-2002 |
Semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise transistor 半导体分立器件 3dg251型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/151-2002 |
Semiconductor discrete device. Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 半导体分立器件 2dw14-18型低噪声硅电压基准二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/150-2002 |
Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2DW230~236 半导体分立器件 2dw230-236型硅电压基准二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SN/T 1118-2002 |
Determination of chromium, silicon, iron, aluminium, magnesium and calcium in chromium ores-wavelength dispersive X-ray fluorescence spectrometric method 铬矿中铬、硅、铁、铝、镁、钙的测定波长色散x射线荧光光谱法 |
China Import Export Inspection
Standards silicon, |
English PDF |
| YY 0334-2002 |
General specification for surgical implants made of silicone elastomer 硅橡胶外科植入物通用要求 |
China Medicine & Medical Device
Standards silicon, |
English PDF |
| SN/T 1097-2002 |
Determination of phosphorus pentoxide, calcium oxide, ferric oxide, aluminum oxide, magnesium oxide, silicon dioxide and potassium oxide content for export phosphate rock by X-ray fluorescence spectrometry 出口磷矿石中五氧化二磷、氧化钙、三氧化二铁、氧化铝、氧化镁、二氧化硅和氧化钾的x-射线荧光光谱测定方法 |
China Import Export Inspection
Standards silicon, |
English PDF |
| SN/T 1039-2002 |
Method for the sampling and sample preparation of silicon carbide packed in metricton bags for import and export 进出口吨包装碳化硅取样制样方法 |
China Import Export Inspection
Standards silicon, |
English PDF |
| SN/T 1014.1-2001 |
Determination of silicon content in ferrosilicon for expor. The potassium fluosilicate volumetric analysis 出口硅铁中硅含量的测定 氟硅酸钾容量法 |
China Import Export Inspection
Standards silicon, |
English PDF |
| SH/T 0706-2001 |
Petroleum products. Determination of aluminium and silicon in fuel oils. Inductively coupled plasma emission and atomic absorption spectroscopy methods 燃料油中铝和硅含量测定法(电感耦合等离子体发射光谱及原子吸收光谱法) |
China Petrochemical Industry
Standards silicon, |
English PDF |
| SJ 50033/146-2000 |
Semiconductor discrete devices. Detail specification for type 3DA601 C band silicon bipolar power transistor 半导体分立器件3da601型c波段硅双极型功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/145-2000 |
Semiconductor discrete devices. Detail specification for type 3DA503 silicon microwave pulse power transistor 半导体分立器件3da503型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 11227-2000 |
Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 电子元器件详细规范 3da98型npn硅高频大功率晶体管 |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 11226-2000 |
Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor 电子元器件详细规范 3da505型l波段硅脉冲功率晶体管 |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 11225-2000 |
Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor 电子元器件详细规范 3da504型s波段硅脉冲功率晶体管 |
China Electronics
Standards silicon, |
English PDF |
| HG/T 3313-2000 |
Room Temperature Vulcanized Methyl Silicone Rubber 室温硫化甲基硅橡胶 |
China Chemical Industry
Standards silicon, |
English PDF |
| HG/T 3312-2000 |
110 Methyl Vinyl Silicone Rubber 110甲基乙烯基硅橡胶 |
China Chemical Industry
Standards silicon, |
English PDF |
| QC/T 422-2000 |
Motor vehicle with a silicon rectifier diode 机动车用硅整流二级管 |
China Automobile & Vehicle industry
Standards silicon, |
English PDF |
| SN/T 0832-1999 |
Determination of iron,silicon,calcium,manganese,aluminium,titanium,magnesium and phosphorus in iron ores for import and export. Wavelength dispersive X-ray fluorescence spectrometric method 进出口铁矿石中铁、硅、钙、锰、铝、钛、镁和磷的测定 波长色散x射线荧光光谱法 |
China Import Export Inspection
Standards silicon, |
English PDF |
| SN/T 0831-1999 |
Method for the determination of iron,aluminum,silicon,magnesium and calcium in chromium ores for import and export—ICP-AES with microwave dissolution method 进出口铬矿中铁、铝、硅、镁、钙的测定 微波溶样icp-aes法 |
China Import Export Inspection
Standards silicon, |
English PDF |
| SJ 50033/144-1999 |
Semiconductor discrete devices. Detail specification for types 2CW50~78 glass passivation package silicon voltage-regulator diodes 半导体光电子器件2cw50～78型玻璃钝化封装硅电压调整二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| HG/T 3315-1999 |
Anionic hydroxy-terminated silicone emulsion 阴离子羟基硅油乳液 |
China Chemical Industry
Standards silicon, |
English PDF |
| HG/T 3314-1999 |
Cationic hydroxy-terminated silicone emulsion 阳离子羟基硅油乳液 |
China Chemical Industry
Standards silicon, |
English PDF |
| SN/T 0770-1999 |
Determination of silicon oxide in middle carbon flake graphite. Molybdenum blue photometric method 出口中碳鳞片石墨中二氧化硅的测定 硅钼蓝分光光度法 |
China Import Export Inspection
Standards silicon, |
English PDF |
| SN/T 0750-1999 |
Import and export carbon steel and low alloyed steel. Determination of aluminium,arsenic,chromium,cobalt,copper,phosphorus,mangaanese,molybdenum,nickel,silicon,tin,titanium,and vanadium content. Inductively coupled plasma atomic emission spectrometric me 进出口碳钢、低合金钢中铝、砷、铬、钴、铜、磷、锰、钼、镍、硅、锡、钛、钒含量的测定--电感耦合等离子体原子发射光谱（icp-aes）法 |
China Import Export Inspection
Standards silicon, |
English PDF |
| SJ 50033/140-1999 |
Semiconductor discrete devices. Detail specification for type 3DA502 silicon microwave pulse power transistor 半导体光电子器件3da502型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20658-1998 |
Specification for radiation hardened monocrystal silicon wafers for military CMOS integrated circuits 军用电站方舱通用规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/135-1997 |
Semiconductor discrete devices. Detail specification for type 2CZ10 silicon switching rectifier diode 半导体分立器件2cz10型硅开关整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/125-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN11~15 半导体分立器件pin11～15型硅pin二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/124-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN101~105 半导体分立器件pin101～105型硅pin大功率二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/123-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN62317 半导体分立器件pin62317型硅pin大功率二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/122-1997 |
Semiconductor discrete devices. Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3684～cs3687型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/121-1997 |
Semiconductor discrete devices. Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3458～cs3460型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/117-1997 |
Semiconductor discrete devices. Detail specification for type 2CK38 silicon large current switch diode 半导体分立器件2ck38型硅大电流开关二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/116-1997 |
Semiconductor discrete devices. Detail specification for type 2CK29 silicon large current switch diode 半导体分立器件2ck29型硅大电流开关二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/115-1997 |
Semiconductor discrete devices. Detail specification for type 2CK28 silicon large current switch diode 半导体分立器件2ck28型硅大电流开关二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20636-1997 |
Test method for oxygen and carbon contents of large diameter thin silicon wafer in microzone for use in IC ic用大直径薄硅片的氧、碳含量微区试验方法 |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 10954-1996 |
Detail specification for electronic component silicon switching diode for type 2CK120 电子器件详细规范 ２ｃｋ１２０型硅开关二极管（可供认证用） |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 10892-1996 |
silicon switching rectifier diode for type 2CN31D 电子器件详细规范 ２ｃｎ３１ｄ型硅开关整流二极管（可供认证用） |
China Electronics
Standards silicon, |
English PDF |
| SN/T 0551-1996 |
Determination of titanium content in ferrosilicon for export. Diantipyrylmethane photometric method 出口硅铁中钛量的测定 二氨替比林甲烷分光光度法 |
China Import Export Inspection
Standards silicon, |
English PDF |
| SN/T 0550.2-1996 |
Determination of iron,aluminium and calcium for export silicon metal. Volumetric method 出口金属硅中铁、铝、钙的测定 容量法 |
China Import Export Inspection
Standards silicon, |
English PDF |
| SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 ３ｄｇ２１６型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SN/T 0480.7-1995 |
Method of analysis of baryte for export. Determination of silicon dioxide 出口重晶石分析方法 二氧化硅的测定 |
China Import Export Inspection
Standards silicon, |
English PDF |
| SJ 50033/90-1995 |
Semiconductor discrete device. Detail specification for type 3DK106 NPN silicon low -- Power switching transistor 半导体分立器件 ３ｄｋ１０６型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/89-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ６７６8and ＣＳ６７70 silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ６７６８和ｃｓ６７７０型硅ｎ沟道增强型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/88-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ６７６０and ＣＳ６７６２ silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ６７６０和ｃｓ６７６２型硅ｎ沟道增强型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/87-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ４０９１~ＣＳ４０９３ silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ４０９１～ｃｓ４０９３型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/86-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ５１１４~ＣＳ５１１６ silicon P-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ５１１４～ｃｓ５１１６型硅ｐ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/85-1995 |
Semiconductor discrete device. Detail specification for type CS141 silicon N-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１４１型硅ｎ沟道ｍｏｓ耗尽型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/84-1995 |
Semiconductor discrete device. Detail specification for type CS140 silicon N-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１４０型硅ｎ沟道ｍｏｓ耗尽型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/83-1995 |
Semiconductor discrete device. Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１３９型硅ｐ沟道ｍｏｓ增强型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/82-1995 |
Semiconductor discrete device. Detail specification for type 3DK100 NPN silicon low-power switching transistor 半导体分立器件 ３ｄｋ１００型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/77-1995 |
Semiconductor discrete devices. Detail specification for type 3DA331 silicon microwave power tansistor 半导体分立器件 ３ｄａ３３１型硅微波功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/76-1995 |
Semiconductor discrete devices. Detail specification for type 3DG218 silicon microwave low-noise tansistor 半导体分立器件 ３ｄｇ２１８型硅微波低噪声晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 silicon ultra high frequency low-power tansistor 半导体分立器件 ３ｄｇ１３５型硅超高频小功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/74-1995 |
Semiconductor discrete device. Detail specification for type 3DA325 silicon microwave power tansistor 半导体分立器件 ３ｄａ３２５型硅微波功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/73-1995 |
Semiconductor discrete device. Detail specification for type QL74 silicon single phase bridge rectifier 半导体分立器件 ｑｌ７４型硅单相桥式整流器详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/68-1995 |
Semiconductor discrete device. Detail specification for type BT51 NPN silicon small power difference matchen -- Pair transistor 半导体分立器件 ｂｔ５１型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20514-1995 |
Specification for silicon epitaxial wafer for microwave power transistor 微波功率晶体管用硅外延片规范 |
China Electronics
Standards silicon, |
English PDF |
| SN/T 0355-1995 |
Rule for the inspection of silicon carbide abrasive materials for export 出口碳化硅磨料检验规程 |
China Import Export Inspection
Standards silicon, |
English PDF |
| HG/T 2274-1995 |
(FCMP quality with silicon magnesium phosphate rock semi-self-fluxing) 钙镁磷肥用硅镁质半自熔性磷矿石 |
China Chemical Industry
Standards silicon, |
English PDF |
| SJ 50033/39-1994 |
Semiconductor discrete device. Detail specification for type 2CZ106 silicon switching rectifier diode 半导体分立器件 ２ｃｚ１０６型开关整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/38-1994 |
Semiconductor discrete device. Detail specification for type CS4856~CS4861 silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ４８５６～ｃｓ４８６１型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/34-1994 |
Semiconductor discrete device. Detail specification for type FH129 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１２９型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/33-1994 |
Semiconductor discrete device. Detail specification for type FH121 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１２１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/31-1994 |
Semiconductor discrete device. Detail specification for type FH101 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１０１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/26-1994 |
Semiconductor discrete device. Detail specification for type 2CW1006~2CW1015 silicon voltage -- Regulator diode 半导体分立器件 ２ｃｗ１００６～２ｃｗ１０１５型硅电压调整二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/25-1994 |
Semiconductor discrete device. Detail specification for type 2CW1001~2CW1005 silicon voltage -- Regulator diode 半导体分立器件 ２ｃｗ１００１～２ｃｗ１００５型硅电压调整二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/22-1994 |
Semiconductor discrete device. Detail specification for silicon tuning varactor diode for type 2CC51E 半导体分立器件 ２ｃｃ５１ｅ型硅电调变容二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/2-1994 |
Semiconductor discret device. Detail specification for type 3CK2904, 3CK2904A, 3CK2905 and 3CK2905A PNP silicon cow-power switching transistor 半导体分立器件 ３ｃｋ２９０４（２９０４ａ、２９０５和２９０５ａ）型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/21-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ75 半导体分立器件 ２ｃｚ７５型硅开关整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/20-1994 |
Semiconductor discrete device. Detail specification for silicon rectifier diode for type 2CZ101 半导体分立器件 ２ｃｚ１０１型硅开关整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/19-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ74 半导体分立器件 ２ｃｚ７４型硅开关整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033/18-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ73 半导体分立器件 ２ｃｚ７３型硅开关整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033.56-1994 |
Semiconductor discrete device. Detail specification for type 2CK85 silicon switching diode 半导体分立器件 ２ｃｋ８５型硅开关二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033.55-1994 |
Semiconductor discrete device. Detail specification for type 2CK82 silicon switching diode 半导体分立器件 ２ｃｋ８２型硅开关二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033.50-1994 |
Semiconductor discrete device. Detail specification for type QL73 silicon three phase full wave bridge rectifier 半导体分立器件 ｑｌ７３型硅三相桥式整流器详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033.48-1994 |
Semiconductor discrete device. Detail specification for type 2DV8CP silicon microwave detector diode 半导体分立器件 ２ｄｖ８ｃｐ型硅微波检波二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033.47-1994 |
Semiconductor discrete device. Detail specification for type 2CZ117 silicon rectifier diode 半导体分立器件 ２ｃｚ１１７型硅整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033.46-1994 |
Semiconductor discrete device. Detail specification for type 2CZ59 silicon rectifier diode 半导体分立器件 ２ｃｚ５９型硅整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033.45-1994 |
Semiconductor discrete device. Detail specification for type 2CZ58 silicon rectifier diode 半导体分立器件 ２ｃｚ５８型硅整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033.44-1994 |
Semiconductor discrete device. Detail specification for type 2CZ105 silicon witching rectifier diode 半导体分立器件 ２ｃｚ１０５型硅开关整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 50033.43-1994 |
Semiconductor discrete device. Detail specification for type 2CZ104 silicon switching rectifier diode 半导体分立器件 ２ｃｚ１０４型硅开关整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| QB/T 1990-1994 |
(Clay bonded silicon carbide sagger) 粘土结合碳化硅匣钵 |
China Light Industry
Standards silicon, |
English PDF |
| SH/T 0598-1994 |
(Non-silicone anti-foaming agent) 非硅抗泡剂 |
China Petrochemical Industry
Standards silicon, |
English PDF |
| SJ/T 31436-1994 |
Requirements of readiness and methods of inspection and assessment for silicon rectifier arc welding machines 硅整流弧焊机完好要求和检查评定方法 |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 31096-1994 |
Readiness requirements and methods of inspection and assessment for high-precision silicon wafer grinding machines 精密硅片磨床完好要求和检查评定方法 |
China Electronics
Standards silicon, |
English PDF |
| TB/T 2411-1993 |
(High phosphorus, carbon brake shoe phosphorus, sulfur, silicon, manganese, phosphorus simple chemical analysis methods) 高磷、中磷闸瓦中碳、硫、硅、锰、磷简单化学分析方法 |
China Railway & Train
Standards silicon, |
English PDF |
| SJ 20308-1993 |
Detail specification for type FH1025 PN silicon power Darlington transistor 半导体分立器件 ｆｈ１０２５型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20307-1993 |
Detail specification for types FH646 PN silicon power Darlington transistor 半导体分立器件 ｆｈ６４６型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20306-1993 |
Detail specification for types FH181A NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１８１ａ型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20274-1993 |
Semiconductor discrete devices Detail specificion for silicon switching diode for type 2CK84 半导体分立器件2ck84型硅开关二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| QB/T 1683-1993 |
(Aluminum silicon magnesium sagger) 铝硅镁质匣钵 |
China Light Industry
Standards silicon, |
English PDF |
| SJ 20188-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550 through 2CZ5554 半导体分立器件 ２ｃｗ３０１６～３０５１型电压调整二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20187-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550~5554 半导体分立器件 ２ｃｚ５５５０～５５５４型硅整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20186-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CW2970~3015 半导体分立器件 ２ｃｗ２９７０～３０１５型硅电压调整二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20177-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637 半导体分立器件 ３ｃｋ３６３４～３ｃｋ３６３７型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 半导体分立器件 ３ｄｇ３４３９型和３ｄｇ３４４０型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 ３ｄｇ９１８型ｎｐｎ硅超高频小功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20174-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A 半导体分立器件 ３ｄｋ２２２１（２２２１ａ、２２２２、２２２２ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20173-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A 半导体分立器件 ３ｄｋ２２１８（２２１８ａ、２２１９、２２１９ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20167-1992 |
Electron tube Detail specification for silicon-intensifier tartget camera tube of type SF-1403 电子管sf—1403型硅增强靶摄像管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20071-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK4148 半导体分立器件 ２ｃｋ４１４８型硅开关二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20070-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK105 半导体分立器件 ２ｃｋ１０５型硅开关二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20069-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK76 半导体分立器件 ２ｃｋ７６型硅开关二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20068-1992 |
Semiconductor discrete device. Detail specification for lower noise for silicon voltage reference diode for type 2DW14~18 半导体分立器件 ２ｄｗ１４～１８型低噪声硅电压基准二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20067-1992 |
Semiconductor discrete device. Detail specification for type 2CZ30 silicon rectifier diode 半导体分立器件 ２ｃｚ３０型硅整流二极管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20066-1992 |
Semiconductor discrete device. Detail specification for type 2CL3 silicon high voltage rectifier stack 半导体分立器件 ２ｃｌ３型硅高压整流堆详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20065-1992 |
Semiconductor discrete device. Detail specification for type QL72 silicon three phase full wave bridge rectifier 半导体分立器件 ｑｌ７２型硅三相桥式整流器详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20064-1992 |
Semiconductor discrete device. Detail specification for type QL71 silicon single phase full wave bridge rectifier 半导体分立器件 ｑｌ７１型硅单相桥式整流器详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 半导体分立器件 ３ｄｇ２１３型ｎｐｎ硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 半导体分立器件 ３ｄｇ２１０型ｎｐｎ硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20061-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146 半导体分立器件 ｃｓ１４６型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 ３ｄｇ１２０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 ３ｄｇ１１１型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20058-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK105 半导体分立器件 ３ｄｋ１０５型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20057-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK104 半导体分立器件 ３ｄｋ１０４型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20056-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK103 半导体分立器件 ３ｄｋ１０３型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20055-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK102 半导体分立器件 ３ｄｋ１０２型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20054-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK101 半导体分立器件 ３ｄｋ１０１型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| HG/T 2363-1992 |
(Silicone oil kinematic viscosity test methods) 硅油运动粘度试验方法 |
China Chemical Industry
Standards silicon, |
English PDF |
| TB/T 2313-1992 |
(Railway signal transformer, relays, silicon rectifier lightning impulse test) 铁路信号用变压器 继电器 硅整流器雷电冲击试验 |
China Railway & Train
Standards silicon, |
English PDF |
| TB/T 2230-1991 |
(High phosphorus in phosphorus brake shoe carbon, sulfur, silicon, manganese, phosphorus chemical analysis methods) 高磷中磷闸瓦碳 硫 硅 锰 磷化学分析方法 |
China Railway & Train
Standards silicon, |
English PDF |
| SJ 20016-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１８２型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１３０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20014-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power transistor for types 3CG110 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｃｇ１１０型ｐｎｐ硅小功率晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20013-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS10 GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｃｓ１０型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20012-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS4 GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｃｓ４型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SJ 20011-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS1 GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｃｓ１型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards silicon, |
English PDF |
| SH/T 0058-1991 |
(Petroleum coke, silicon, vanadium and iron content assays) 石油焦中硅 钒和铁含量测定法 |
China Petrochemical Industry
Standards silicon, |
English PDF |
| SJ/T 10060-1991 |
Detail specification for electronic components. Ambient rated silicon rectifier diode, Type 2CZ117 电子器件详细规范 ２ｃｚ１１７型环境额定硅整流二极管 |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 10059-1991 |
Detail specification for electronic components. Ambient rated silicon rectifier diode, Type 2CZ116 电子器件详细规范 ２ｃｚ１１６型环境额定硅整流二极管 |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 10058-1991 |
Detail specification for electronic components. Ambient rated silicon rectifier diode, Type 2CZ103 电子器件详细规范 ２ｃｚ１０３型环境额定硅整流二极管 |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 10057-1991 |
Detail specification for electronic component. Case rated silicon rectifier diode, Type 2CZ60 电子器件详细规范 ２ｃｚ６０型管壳额定硅整流二极管 |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 10056-1991 |
Detail specification for electronic components. Case rated silicon rectifier diode, Type 2CZ59 电子器件详细规范 ２ｃｚ５９型管壳额定硅整流二极管 |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 10055-1991 |
Detail specification for electronic components. Case rated silicon rectifier diode, Type 2CZ58 电子器件详细规范 ２ｃｚ５８型管壳额定硅整流二极管 |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 10054-1991 |
Detail specification for electronic components. Case rated silicon rectifier diode for Type 2CZ57 电子器件详细规范 ２ｃｚ５７型管壳额定硅整流二极管 |
China Electronics
Standards silicon, |
English PDF |
| YY/T 0031-1990 |
(Silicone rubber infusion (blood) Tube) |
China Medicine & Medical Device
Standards silicon, |
English PDF |
| HG/T 2957.9-1984 |
Alunite ores-Determination of silicon content-Gravimetric method |
China Chemical Industry
Standards silicon, |
English PDF |
| SJ/T 2429-1983 |
Test method for electrical characteristics of astronautic monocrystal silicon solar cells |
China Electronics
Standards silicon, |
English PDF |
| SJ/T 2428-1983 |
Clibration for astronautic standard monocrystal silicon solar cells |
China Electronics
Standards silicon, |
English PDF |
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