Cart:
Keyword:
| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| JT/T 892-2014 |
B1ock assembly type expansion and contraction installation for highway bridge 公路桥梁节段装配式伸缩装置 |
China Highway & Transportation
Standards DG type |
 English PDF |
| YY/T 1143-2008 |
Bridge type impedance blood flow recorder 电桥式阻抗血流图仪 |
China Medicine & Medical Device
Standards DG type |
English PDF |
| JT/T 502-2004 |
Highway bridge wave-type expansion and contraction installation 公路桥梁波形伸缩装置 |
China Highway & Transportation
Standards DG type |
English PDF |
| JT/T 4-2004 |
Plate type elastomeric pad bearings for highway bridges 公路桥梁板式橡胶支座 |
China Highway & Transportation
Standards DG type |
English PDF |
| SJ 50033/160-2002 |
Semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power transistor 半导体分立器件 3dg122型硅超高频小功率晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 50033/159-2002 |
Semiconductor discrete devices. Detail specification for type 3DG142 silicon UHF low-noise transistor 半导体分立器件 3dg142型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 50033/158-2002 |
Semiconductor discrete devices. Detail specification for type 3DG44 silicon UHF low-noise transistor 半导体分立器件 3dg44型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 50033/155-2002 |
Semiconductor discrete devices. Detail specification for type 3DG252 sillcon microwave linearity transistor 半导体分立器件 3dg252型硅微波线性晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 50033/154-2002 |
Semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise transistor 半导体分立器件 3dg251型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| JT/T 391-1999 |
Pot-type elastomeric pad bearing for highway bridge |
China Highway & Transportation
Standards DG type |
English PDF |
| SJ 50597/50-1997 |
Semiconductor integrated cicuits Detail specification for type JT54F74 FTTL dual D positive edge-triggered flip-flops 半导体集成电路jt54f74型fttl双上升沿d触发器详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ/T 10696-1996 |
Semiconductor discrete device Detail specification for type QL50 in use for automotive nine diodes bridge rectifying modules 半导体分立器件 ｑｌ５０型机动车用九管桥式整流组件详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 ３ｄｇ２１６型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 50033/76-1995 |
Semiconductor discrete devices. Detail specification for type 3DG218 Silicon microwave low-noise tansistor 半导体分立器件 ３ｄｇ２１８型硅微波低噪声晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor 半导体分立器件 ３ｄｇ１３５型硅超高频小功率晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 50033/73-1995 |
Semiconductor discrete device. Detail specification for type QL74 silicon single phase bridge rectifier 半导体分立器件 ｑｌ７４型硅单相桥式整流器详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 50033.50-1994 |
Semiconductor discrete device. Detail specification for type QL73 silicon three phase full wave bridge rectifier 半导体分立器件 ｑｌ７３型硅三相桥式整流器详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 半导体分立器件 ３ｄｇ３４３９型和３ｄｇ３４４０型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 ３ｄｇ９１８型ｎｐｎ硅超高频小功率晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 20065-1992 |
Semiconductor discrete device. Detail specification for type QL72 silicon three phase full wave bridge rectifier 半导体分立器件 ｑｌ７２型硅三相桥式整流器详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 20064-1992 |
Semiconductor discrete device. Detail specification for type QL71 Silicon single phase full wave bridge rectifier 半导体分立器件 ｑｌ７１型硅单相桥式整流器详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 半导体分立器件 ３ｄｇ２１３型ｎｐｎ硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 半导体分立器件 ３ｄｇ２１０型ｎｐｎ硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 ３ｄｇ１２０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 ３ｄｇ１１１型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 20016-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１８２型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１３０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards DG type |
English PDF |
| JJG(SJ)05046-1991 |
(GR1687-type LCR digital bridge test procedures) |
China Metrological
Standards DG type |
English PDF |
| JJG(SJ)05042-1991 |
(CD-22-type bias Bridge test procedures) |
China Metrological
Standards DG type |
English PDF |
| TB 1975-1987 |
(Curved stop valve types and basic dimensions Dg40) |
China Railway & Train
Standards DG type |
English PDF |
| TB 1973-1987 |
(Ball check valve type and basic dimensions Dg15 Dg20 Dg25) |
China Railway & Train
Standards DG type |
English PDF |
| TB 1972-1987 |
(Ball check valve types and basic dimensions Dg10) |
China Railway & Train
Standards DG type |
English PDF |
| TB/T 1565-1985 |
(DG-type catheter guide wheel) |
China Railway & Train
Standards DG type |
English PDF |
| Find out:36Items | To Page of: First -Previous-Next -Last | 1 |
+86-755-25831330
