Standard Code | Standard Title | Standard Class | Order |
---|---|---|---|
YS/T 1590-2022 |
Evaluation requirements for green factories in the polysilicon industry {译} 多晶硅行业绿色工厂评价要求 |
China Non-ferrous Metal Industry
Standards RE silicon |
English PDF |
YB/T 6026-2022 |
Pig iron - Determination of silicon, manganese, phosphorus, sulfur, titanium content - Wavelength dispersive X-ray fluorescence spectrometry {译} 生铁 硅、锰、磷、硫、钛含量的测定 波长色散X射线荧光光谱法 |
China Metallurgy Industry
Standards RE silicon |
English PDF |
YB/T 6038-2022 |
Electroslag remelting slag Determination of total calcium, fluorine, silicon dioxide, aluminum oxide, magnesium oxide content Wavelength dispersive X-ray fluorescence spectrometry {译} 电渣重熔渣 总钙、氟、二氧化硅、三氧化二铝、氧化镁含量的测定 波长色散X射线荧光光谱法 |
China Metallurgy Industry
Standards RE silicon |
English PDF |
YB/T 6037-2022 |
Fused magnesia chrome sand Determination of content of magnesium oxide, aluminum oxide, silicon dioxide, calcium oxide, titanium dioxide, chromium oxide, and ferric oxide by wavelength dispersive X-ray fluorescence spectrometry (melted casting method) {译} 电熔镁铬砂 氧化镁、三氧化二铝、二氧化硅、氧化钙、二氧化钛、三氧化二铬、三氧化二铁含量的测定 波长色散X射线荧光光谱法(熔铸片法) |
China Metallurgy Industry
Standards RE silicon |
English PDF |
YY/T 0334-2022 |
General requirements for silicone rubber surgical implants {译} 硅橡胶外科植入物通用要求 |
China Pharmaceutics Industry
Standards RE silicon |
English PDF |
HG/T 5962-2021 |
Silicon wafer cutting waste liquid treatment and disposal method {译} 硅片切割废液处理处置方法 |
China Chemistry Industry
Standards RE silicon |
English PDF |
YB/T 4726.4-2021 |
Iron-containing dust sludge - Determination of silicon content - Ferrous ammonium sulfate reduction-silicon molybdenum blue spectrophotometry {译} 含铁尘泥 硅含量的测定 硫酸亚铁铵还原-硅钼蓝分光光度法 |
China Metallurgy Industry
Standards RE silicon |
English PDF |
YB/T 4896-2021 |
Limit of energy consumption per unit product of aluminum-silicon refractory products {译} 铝硅质耐火制品单位产品能源消耗限额 |
China Metallurgy Industry
Standards RE silicon |
English PDF |
YB/T 4907-2021 |
Ferromanganese, manganese-silicon alloys and metal manganese - Determination of manganese, silicon, iron and phosphorus content - Wavelength dispersive X-ray fluorescence spectrometry {译} 锰铁、锰硅合金和金属锰 锰、硅、铁、磷含量的测定 波长色散X射线荧光光谱法 |
China Metallurgy Industry
Standards RE silicon |
English PDF |
YB/T 4935-2021 |
Determination of ferromanganese, manganese-silicon alloy, metal manganese-aluminum content by chrome azure S spectrophotometry{译} {译} 锰铁、锰硅合金、金属锰 铝含量的测定 铬天青S分光光度法 |
China Metallurgy Industry
Standards RE silicon |
English PDF |
YS/T 1509.2-2021 |
Methods for chemical analysis of silicon-carbon composite anode materials - Part 2: Determination of carbon content - High frequency heating infrared absorption method{译} {译} 硅碳复合负极材料化学分析方法 第2部分:碳含量的测定 高频加热红外吸收法 |
China Non-ferrous Metal Industry
Standards RE silicon |
English PDF |
SN/T 5251-2020 |
Determination of sodium, aluminum, silicon, calcium, titanium, vanadium, manganese, iron, nickel and sulfur content in petroleum coke for import and export - wavelength dispersive X-ray fluorescence spectrometry {译} 进出口石油焦中钠、铝、硅、钙、钛、钒、锰、铁、镍、硫含量的测定 波长色散X射线荧光光谱法 |
China Import&Export Inspection Industry
Standards RE silicon |
English PDF |
JB/T 13946-2020 |
Silicon Carbide Special Products Reaction Sintered Silicon Carbide Cantilever Propeller {译} 碳化硅特种制品 反应烧结碳化硅 悬臂桨 |
China Machinery Industry
Standards RE silicon |
English PDF |
JB/T 13945-2020 |
Silicon Carbide Special Products Reaction Sintered Silicon Carbide Saggar {译} 碳化硅特种制品 反应烧结碳化硅 匣钵 |
China Machinery Industry
Standards RE silicon |
English PDF |
JB/T 10449-2020 |
Silicon Carbide Special Products Recrystallized Silicon Carbide Square Beam {译} 碳化硅特种制品 重结晶碳化硅 方梁 |
China Machinery Industry
Standards RE silicon |
English PDF |
JB/T 14091-2020 |
Technical specification for acceptance of complete set of equipment for waste heat recovery and utilization of ferrosilicon ore furnace {译} 硅铁矿热炉余热回收利用成套装置验收技术规范 |
China Machinery Industry
Standards RE silicon |
English PDF |
HG/T 5753-2020 |
Room temperature curing (vulcanizing) fluorosilicone sealant {译} 室温固化(硫化)氟硅密封胶 |
China Chemistry Industry
Standards RE silicon |
English PDF |
YS/T 1379-2020 |
Chemical analysis method of pure platinum Determination of palladium, rhodium, iridium, ruthenium, gold, silver, aluminum, bismuth, chromium, copper, iron, nickel, lead, magnesium, manganese, tin, zinc, silicon content Inductively coupled plasma atomic em {译} 纯铂化学分析方法 钯、铑、铱、钌、金、银、铝、铋、铬、铜、铁、镍、铅、镁、锰、锡、锌、硅含量的测定 电感耦合等离子体原子发射光谱法 |
China Non-ferrous Metal Industry
Standards RE silicon |
English PDF |
YS/T 1378-2020 |
Chemical analysis method of pure palladium Determination of platinum, rhodium, iridium, ruthenium, gold, silver, aluminum, bismuth, chromium, copper, iron, nickel, lead, magnesium, manganese, tin, zinc, silicon content Inductively coupled plasma atomic em {译} 纯钯化学分析方法 铂、铑、铱、钌、金、银、铝、铋、铬、铜、铁、镍、铅、镁、锰、锡、锌、硅含量的测定 电感耦合等离子体原子发射光谱法 |
China Non-ferrous Metal Industry
Standards RE silicon |
English PDF |
NB/T 42104.4-2016 |
(Environmental requirements for crystalline silicon PV modules for ground applications - Part 4: Plateau climatic conditions) 地面用晶体硅光伏组件环境适应性测试要求 第 4部分:高原气候条件 |
China Energy industry
Standards RE silicon |
English PDF |
NB/T 42104.3-2016 |
(Environmental requirements for crystalline silicon photovoltaic modules for ground use - Part 3: Hygienic climatic conditions) 地面用晶体硅光伏组件环境适应性测试要求 第 3部分:湿热气候条件 |
China Energy industry
Standards RE silicon |
English PDF |
NB/T 42104.2-2016 |
(Environmental requirements for crystalline silicon PV modules for the ground - Part 2: Dry and hot climatic conditions) 地面用晶体硅光伏组件环境适应性测试要求 第 2部分:干热气候条件 |
China Energy industry
Standards RE silicon |
English PDF |
NB/T 42104.1-2016 |
(Environmental requirements for crystalline silicon photovoltaic modules for the ground - Part 1: General climatic conditions) 地面用晶体硅光伏组件环境适应性测试要求 第 1部分:一般气候条件 |
China Energy industry
Standards RE silicon |
English PDF |
SJ/T 1839-2016 |
(Semiconductor discrete device 3DK108 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk108型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 1838-2016 |
(Semiconductor discrete device 3DK29 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk29型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 1834-2016 |
(Semiconductor discrete device 3DK104 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk104型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 1833-2016 |
(Semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk103型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 1832-2016 |
(Semiconductor discrete device 3DK102 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk102型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 1831-2016 |
(Semiconductor discrete device 3DK28 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk28型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 1830-2016 |
(Semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk101型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 1826-2016 |
(Semiconductor discrete device 3DK100 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk100型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 1486-2016 |
(Discrete semiconductor devices 3CG180 silicon PNP frequency high power transistor backpressure small detail specification) 半导体分立器件 3cg180型硅pnp高频高反压小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 1480-2016 |
(Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg130型硅pnp高频小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 1477-2016 |
(Discrete semiconductor devices 3CG120 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg120型硅pnp高频小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 1472-2016 |
(Discrete semiconductor devices 3CG110 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg110型硅pnp高频小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
YD/T 841.4-2016 |
(Underground communication channels with plastic tube - Part 4: Silicon core pipe) 地下通信管道用塑料管 第4部分:硅芯管 |
China Telecommunication
Standards RE silicon |
English PDF |
YY/T 1405-2016 |
(Natural and silicone rubber diaphragm contraceptive requirements and test machinery and equipment reusable) 机械避孕器械可重复使用的天然和硅橡胶阴道隔膜要求和试验 |
China Medicine & Medical Device
Standards RE silicon |
English PDF |
YY/T 1471-2016 |
(IUDs containing copper indomethacin silicone rubber technical requirements and test methods for indole) 含铜宫内节育器用含吲哚美辛硅橡胶技术要求与试验方法 |
China Medicine & Medical Device
Standards RE silicon |
English PDF |
YY/T 1457-2016 |
(The method of determination of oligomeric siloxane-based substances active surgical implants silicone gel-filled breast implants) 无源外科植入物硅凝胶填充乳房植入物中寡聚硅氧烷类物质测定方法 |
China Medicine & Medical Device
Standards RE silicon |
English PDF |
DL/T 5727-2016 |
(Insulators room temperature curing silicone rubber anti-fouling paints flash site construction specifications) 绝缘子用常温固化硅橡胶防污闪涂料现场施工技术规范 |
China Electricity & Power
Standards RE silicon |
English PDF |
JG/T 488-2015 |
High temperature vulcanized silicone rubber gaskets for buildings 建筑用高温硫化硅橡胶密封件 |
China Building & Construction
Standards RE silicon |
English PDF |
SJ/T 11552-2015 |
(In Brewster angle incidence P polarized radiation of infrared absorption spectroscopy measurements interstitial oxygen in silicon) 以布鲁斯特角入射p偏振辐射红外吸收光谱法测量硅中间隙氧含量 |
China Electronics
Standards RE silicon |
English PDF |
SN/T 4304-2015 |
(Barium aluminum exports, measured by inductively coupled plasma atomic magnesium, lead, silicon emission spectrometry) 出口氯化钡中铝、镁、铅、硅的测定 电感耦合等离子体原子发射光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SJ/T 11491-2015 |
Test methods for measurement of interstitial oxygen content in silicon by short baseline infrared absorption spectrometry 短基线红外吸收光谱法测量硅中间隙氧含量 |
China Electronics
Standards RE silicon |
English PDF |
HG/T 2879.3-2014 |
Rubber compounding ingredients. Kaolin clay. Part 3: Determination of silicon content 橡胶配合剂 陶土 第3部分:硅含量的测定 |
China Chemical Industry
Standards RE silicon |
English PDF |
SN/T 4025-2014 |
(RE silicon magnesium alloy and silicon alloy chemical analysis of rare earth Inductively coupled plasma mass spectrometry) 稀土硅铁合金及镁硅铁合金化学分析方法 稀土总量的测定 电感耦合等离子体质谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 3999-2014 |
(REACH regulation of high concern substances wavelength detection method for rapid screening of cobalt, arsenic, chromium, sodium, tin, lead, zinc, silicon, aluminum, molybdenum, potassium, strontium, zirconium and calcium-dispersive X-ray fluorescence sp reach法规高关注物质中钴、砷、铬、钠、锡、铅、锌、硅、铝、钼、钾、锶、锆和钙的快速筛选检测方法 波长色散x射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
JC/T 2212-2014 |
Solid-state pressureless sintered silicon carbide ceramic heat exchanger tubes 常压固相烧结碳化硅陶瓷热交换管 |
China Building Materials
Standards RE silicon |
English PDF |
SN/T 3916-2014 |
Determination of molybdenum,iron,lead,copper,silicon,calcium in molybdenum concentrates by X-ray fluorescence spectrometry 钼精矿中钼、铁、铅、铜、硅、钙元素的含量测定 波长色散x射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 3915-2014 |
Determination of magnesium,silicon,titanium,manganese,iron,nickel,copper,zinc,gallium in aluminum alloy. X ray fluorescence spectrometry 铝及铝合金中镁、硅、钛、锰、铁、镍、铜、锌、镓的测定 x射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 2763.7-2014 |
(Laterite nickel ore for chemical analysis - Part 7; iron, nickel, silicon, aluminum, magnesium, calcium, titanium, manganese, copper and phosphorus content measurement wavelength dispersive X-ray fluorescence spectrometry) 红土镍矿化学分析方法 第7部分;铁、镍、硅、铝、镁、钙、钛、锰、铜和磷含量的测定 波长色散x荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 3789-2014 |
Determination of aluminum,cobalt,copper,manganese,molybdenum,nickel,phosphorus,sulfur,silicon,titanium in stainless steel - Wavelength dispersive X-ray fluorescence spectrometry 不锈钢中铝、钴、铜、锰、钼、镍、磷、硫、硅、钛的测定 波长色散X射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 3795-2014 |
(Silicone and other polymer cobalt chloride - Screening - wavelength dispersive X -ray fluorescence spectrometry) 硅胶及其他聚合物中二氯化钴的筛选 波长色散x射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 3604-2013 |
Determination of copper,silicon,manganese,zinc,aluminum and iron in zinc concentrate ore. X-ray fluorescence spectrometry 锌精矿中铜、硅、镁、锌、铝、铁含量的测定 X射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
NB/SH/T 0432-2013 |
Lubricating and sealing silicone grease 润滑密封硅脂 |
China Energy industry
Standards RE silicon |
English PDF |
SN/T 3323.5-2012 |
Mill scale. Part 5: Determination of iron and silicon,calcium,phosphorus,manganese,aluminium,titanium and magnesium. X-ray fluorescence spectrometric method 氧化铁皮 第5部分:总铁及硅、钙、磷、锰、铝、钛和镁元素测定 x射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 3190-2012 |
Determination of aluminium,silicon,vanadium,nickel,iron,sodium,calcium,zinc and phosphorus in crude oil and residual fuel oil. Ashing,fusion-inductively coupled plasma emission spectrometry 原油及残渣燃料油中铝、硅、钒、镍、铁、钠、钙、锌、磷的测定 灰化碱熔-电感耦合等离子体发射光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 3187-2012 |
Determination of sodium,magnesium,aluminium,silicon,calcium,vanadium,iron,nickel,copper,lead,arsenic in crude oil. Wavelength dispersive X-ray fluorescence spectrometry 原油中钠、镁、铝、硅、钙、钒、铁、镍、铜、铅、砷的测定 波长色散x射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 3093-2012 |
Determination of sodium,aluminium,silicon,sulfur,calcium,vanadium,iron,nickel in residual fuel oil. Wavelength dispersive X-ray fluorescence spectrometry 残渣燃料油中钠、铝、硅、钙、钒、铁、镍的测定 波长色散x射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
DL/T 627-2012 |
Room temperature vulcanized silicon rubber anti-pollution coating for insulators 绝缘子用常温固化硅橡胶防污闪涂料 |
China Electricity & Power
Standards RE silicon |
English PDF |
SY/T 4108-2012 |
Design and construction code of optical fiber cable (high-density polyethene silicone duct) laying in the same trench with oil (gas) pipeline 输油(气)管道同沟通敷设光缆(硅芯管)设计及施工规范 |
China Oil & Gas Industry
Standards RE silicon |
English PDF |
HG/T 4221-2011 |
Dual-component silicone rubber vulcanized at normal temperature for mold-making 双组份室温硫化有机硅模具胶 |
China Chemical Industry
Standards RE silicon |
English PDF |
SN/T 2950-2011 |
Determination of silicon,aluminium,alcium,iron,phosphor,chromium and titanium in rare earth ferrosiliconmagnesium for export. X-ray fluorescence spectrometric method 出口稀土镁硅铁中硅、铝、钙、铁、磷、铬、钛含量的测定 x射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
YY/T 0818.1-2010 |
Guide for silicone elastomers, gels and forms used in medical applications. Part 1: Formulation and uncured materials 医用有机硅弹性体、凝胶、泡沫标准指南 第1部分:组成和未固化材料 |
China Medicine & Medical Device
Standards RE silicon |
English PDF |
JC/T 2013-2010 |
Special products of silicon carbide. Reaction bonded silicon carbide plate 碳化硅特种制品 反应烧结碳化硅板 |
China Building Materials
Standards RE silicon |
English PDF |
SN/T 2749-2010 |
Determination of manganese,silicon,aluminum,calcium,titanium in rare earth ferrosilicon. Wave dispersive X-ray fluorescence spectrometry method 稀土硅铁合金中锰、硅、铝、钙和钛的测定 波长色散x射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 2638.1-2010 |
Determination of manganse,iron,silicon,aluminum,calcium,magnesium,titanium,potassium and phosphorus in manganese ores for import and export. Wavelength dispersive X-ray fluorescence spectrometric method 进出口锰矿石中锰、铁、硅、铝、钙、镁、钛、钾和磷元素的测定 波长色散x射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
DL/T 376-2010 |
General technical requirements of silicone rubber insulation materials for composite insulators 电力复合绝缘子用硅橡胶绝缘材料通用技术条件 |
China Electricity & Power
Standards RE silicon |
English PDF |
SN/T 2413-2010 |
Determination of total carbon and sulfur contents of silicon metal for import and export. Infrared absorption spectromentry 进出口金属硅中总碳和硫含量测定 高频燃烧红外吸收光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 2254-2009 |
Determination of aluminum,silicon,vanadium in residual fuel oils. Inductively coupled plasma atomic emission spectrometry 残渣燃料油中铝、硅、钒的测定 电感耦合等离子体原子发射光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 1797.3-2008 |
Technical regulation on safety and sanitation for inspection of iron ore. Part 3: Silicon content for quality evaluation 铁矿石安全卫生检验技术规范 第3部分:质量评价 硅含量 |
China Import Export Inspection
Standards RE silicon |
English PDF |
HG/T 4028-2008 |
Organosilicon high temperature defoamer 有机硅高温消泡剂 |
China Chemical Industry
Standards RE silicon |
English PDF |
SJ 50033/176-2007 |
Semiconductro discrete devices. Detail specification for type 3DA523 silicon microwave pulse power transistor 半导体分立器件 3da523型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/175-2007 |
Semiconductro discrete devices. Detail specification for type 3DA522 silicon microwave pulse power transistor 半导体分立器件 3da522型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/174-2007 |
Semiconductro discrete devices. Detail specification for type 3DA521 silicon microwave pulse power transistor 半导体分立器件 3da521型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/173-2007 |
Semiconductro discrete devices. Detail specification for type 3DA520 silicon microwave pulse power transistor 半导体分立器件 3da520型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/172-2007 |
Semiconductro discrete devices. Detail specification for type 3DA519 silicon microwave pulse power transistor 半导体分立器件 3da519型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/171-2007 |
Semiconductro discrete devices. Detail specification for type 3DA518 silicon microwave pulse power transistor 半导体分立器件 3da518型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/170-2007 |
Semiconductro discrete devices. Detail specification for type 3DA516 silicon microwave pulse power transistor 半导体分立器件 3da516型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
QC/T 706-2004 |
Technical specification of silicon avalanche rectification for motor vehicles 机动车用硅雪崩整流二极管技术条件 |
China Automobile & Vehicle industry
Standards RE silicon |
English PDF |
HG/T 2957.9-2004 |
Alunite ore in silicon content - Gravimetric method 明矾石矿石中硅含量的测定 重量法 |
China Chemical Industry
Standards RE silicon |
English PDF |
SJ 50033/169-2004 |
Semiconductor discrete devices. Detail specification for type 3DA510 silicon microwave pulse power transistor 半导体分立器件3da510型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/168-2004 |
Semiconductor discrete devices. Detail specification for type 3DA509 silicon microwave pulse power transistor 半导体分立器件3da509型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/167-2004 |
Semiconductor discrete devices. Detail specification for type 3DA508 silicon microwave pulse power transistor 半导体分立器件3da508型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/166-2004 |
Semiconductor discrete devices. Detail specification for type 3DA507 silicon microwave pulse power transistor 半导体分立器件3da507型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
YY 0484-2004 |
Implants for surgery. Two-part addition-cuRE silicone elastomers 外科植入物 双组分加成型硫化硅橡胶 |
China Medicine & Medical Device
Standards RE silicon |
English PDF |
HG/T 3362-2003 |
Aluminium powder organosilicon high-temperature resistant baking paint(two-package) 铝粉有机硅烘干耐热漆(双组分) |
China Chemical Industry
Standards RE silicon |
English PDF |
SJ 50033/162-2003 |
Semiconductor discrete device. Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes 半导体分立器件2cw1022型硅双向电压调整二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/161-2002 |
Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2CW210~251 半导体分立器件 2cw210-251型硅电压调整二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/160-2002 |
Semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power transistor 半导体分立器件 3dg122型硅超高频小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/159-2002 |
Semiconductor discrete devices. Detail specification for type 3DG142 silicon UHF low-noise transistor 半导体分立器件 3dg142型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/158-2002 |
Semiconductor discrete devices. Detail specification for type 3DG44 silicon UHF low-noise transistor 半导体分立器件 3dg44型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/157-2002 |
Semiconductor discrete devices. Detail specification for type 3DA506 silicon microwave pulse power transistor 半导体分立器件 3da506型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/156-2002 |
Semiconductor discrete devices. Detail specification for type 3DA505 silicon microwave pulse power transistor 半导体分立器件 3da505型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/154-2002 |
Semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise transistor 半导体分立器件 3dg251型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/151-2002 |
Semiconductor discrete device. Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 半导体分立器件 2dw14-18型低噪声硅电压基准二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/150-2002 |
Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2DW230~236 半导体分立器件 2dw230-236型硅电压基准二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SN/T 1118-2002 |
Determination of chromium, silicon, iron, aluminium, magnesium and calcium in chromium ores-wavelength dispersive X-ray fluorescence spectrometric method 铬矿中铬、硅、铁、铝、镁、钙的测定波长色散x射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 1097-2002 |
Determination of phosphorus pentoxide, calcium oxide, ferric oxide, aluminum oxide, magnesium oxide, silicon dioxide and potassium oxide content for export phosphate rock by X-ray fluorescence spectrometry 出口磷矿石中五氧化二磷、氧化钙、三氧化二铁、氧化铝、氧化镁、二氧化硅和氧化钾的x-射线荧光光谱测定方法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 1039-2002 |
Method for the sampling and sample preparation of silicon carbide packed in metricton bags for import and export 进出口吨包装碳化硅取样制样方法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SJ 50033/146-2000 |
Semiconductor discrete devices. Detail specification for type 3DA601 C band silicon bipolar power transistor 半导体分立器件3da601型c波段硅双极型功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/145-2000 |
Semiconductor discrete devices. Detail specification for type 3DA503 silicon microwave pulse power transistor 半导体分立器件3da503型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 11227-2000 |
Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 电子元器件详细规范 3da98型npn硅高频大功率晶体管 |
China Electronics
Standards RE silicon |
English PDF |
HG/T 3313-2000 |
Room Temperature Vulcanized Methyl Silicone Rubber 室温硫化甲基硅橡胶 |
China Chemical Industry
Standards RE silicon |
English PDF |
QC/T 422-2000 |
Motor vehicle with a silicon rectifier diode 机动车用硅整流二级管 |
China Automobile & Vehicle industry
Standards RE silicon |
English PDF |
SN/T 0832-1999 |
Determination of iron,silicon,calcium,manganese,aluminium,titanium,magnesium and phosphorus in iron ores for import and export. Wavelength dispersive X-ray fluorescence spectrometric method 进出口铁矿石中铁、硅、钙、锰、铝、钛、镁和磷的测定 波长色散x射线荧光光谱法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SN/T 0831-1999 |
Method for the determination of iron,aluminum,silicon,magnesium and calcium in chromium ores for import and export—ICP-AES with microwave dissolution method 进出口铬矿中铁、铝、硅、镁、钙的测定 微波溶样icp-aes法 |
China Import Export Inspection
Standards RE silicon |
English PDF |
SJ 50033/144-1999 |
Semiconductor discrete devices. Detail specification for types 2CW50~78 glass passivation package Silicon voltage-regulator diodes 半导体光电子器件2cw50~78型玻璃钝化封装硅电压调整二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/140-1999 |
Semiconductor discrete devices. Detail specification for type 3DA502 silicon microwave pulse power transistor 半导体光电子器件3da502型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/135-1997 |
Semiconductor discrete devices. Detail specification for type 2CZ10 silicon switching rectifier diode 半导体分立器件2cz10型硅开关整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/125-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN11~15 半导体分立器件pin11~15型硅pin二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/124-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN101~105 半导体分立器件pin101~105型硅pin大功率二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/123-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN62317 半导体分立器件pin62317型硅pin大功率二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/122-1997 |
Semiconductor discrete devices. Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3684~cs3687型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/121-1997 |
Semiconductor discrete devices. Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3458~cs3460型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/117-1997 |
Semiconductor discrete devices. Detail specification for type 2CK38 silicon large current switch diode 半导体分立器件2ck38型硅大电流开关二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/116-1997 |
Semiconductor discrete devices. Detail specification for type 2CK29 silicon large current switch diode 半导体分立器件2ck29型硅大电流开关二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/115-1997 |
Semiconductor discrete devices. Detail specification for type 2CK28 silicon large current switch diode 半导体分立器件2ck28型硅大电流开关二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 10892-1996 |
Silicon switching rectifier diode for type 2CN31D 电子器件详细规范 2cn31d型硅开关整流二极管(可供认证用) |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 3dg216型npn硅小功率差分对晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 3dg144型npn硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 3dg143型npn硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 3dg142型npn硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/90-1995 |
Semiconductor discrete device. Detail specification for type 3DK106 NPN silicon low -- Power switching transistor 半导体分立器件 3dk106型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/89-1995 |
Semiconductor discrete device. Detail specification for type CS6768and CS6770 silicon N-channel deplition mode field-effect transistor 半导体分立器件 cs6768和cs6770型硅n沟道增强型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/88-1995 |
Semiconductor discrete device. Detail specification for type CS6760and CS6762 silicon N-channel deplition mode field-effect transistor 半导体分立器件 cs6760和cs6762型硅n沟道增强型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/87-1995 |
Semiconductor discrete device. Detail specification for type CS4091~CS4093 silicon N-channel deplition mode field-effect transistor 半导体分立器件 cs4091~cs4093型硅n沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/86-1995 |
Semiconductor discrete device. Detail specification for type CS5114~CS5116 silicon P-channel deplition mode field-effect transistor 半导体分立器件 cs5114~cs5116型硅p沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/85-1995 |
Semiconductor discrete device. Detail specification for type CS141 silicon N-channel MOS enhancement mode field-effect transistor 半导体分立器件 cs141型硅n沟道mos耗尽型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/84-1995 |
Semiconductor discrete device. Detail specification for type CS140 silicon N-channel MOS enhancement mode field-effect transistor 半导体分立器件 cs140型硅n沟道mos耗尽型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/83-1995 |
Semiconductor discrete device. Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor 半导体分立器件 cs139型硅p沟道mos增强型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/82-1995 |
Semiconductor discrete device. Detail specification for type 3DK100 NPN silicon low-power switching transistor 半导体分立器件 3dk100型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/77-1995 |
Semiconductor discrete devices. Detail specification for type 3DA331 Silicon microwave power tansistor 半导体分立器件 3da331型硅微波功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/76-1995 |
Semiconductor discrete devices. Detail specification for type 3DG218 Silicon microwave low-noise tansistor 半导体分立器件 3dg218型硅微波低噪声晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor 半导体分立器件 3dg135型硅超高频小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/74-1995 |
Semiconductor discrete device. Detail specification for type 3DA325 silicon microwave power tansistor 半导体分立器件 3da325型硅微波功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/73-1995 |
Semiconductor discrete device. Detail specification for type QL74 silicon single phase bridge rectifier 半导体分立器件 ql74型硅单相桥式整流器详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/68-1995 |
Semiconductor discrete device. Detail specification for type BT51 NPN silicon small power difference matchen -- Pair transistor 半导体分立器件 bt51型npn硅小功率差分对晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/39-1994 |
Semiconductor discrete device. Detail specification for type 2CZ106 silicon switching rectifier diode 半导体分立器件 2cz106型开关整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/38-1994 |
Semiconductor discrete device. Detail specification for type CS4856~CS4861 silicon N-channel deplition mode field-effect transistor 半导体分立器件 cs4856~cs4861型硅n沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/34-1994 |
Semiconductor discrete device. Detail specification for type FH129 NPN silicon power Darlington transistor 半导体分立器件 fh129型npn硅功率达林顿晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/33-1994 |
Semiconductor discrete device. Detail specification for type FH121 NPN silicon power Darlington transistor 半导体分立器件 fh121型npn硅功率达林顿晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/31-1994 |
Semiconductor discrete device. Detail specification for type FH101 NPN silicon power Darlington transistor 半导体分立器件 fh101型npn硅功率达林顿晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/26-1994 |
Semiconductor discrete device. Detail specification for type 2CW1006~2CW1015 silicon voltage -- Regulator diode 半导体分立器件 2cw1006~2cw1015型硅电压调整二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/25-1994 |
Semiconductor discrete device. Detail specification for type 2CW1001~2CW1005 silicon voltage -- Regulator diode 半导体分立器件 2cw1001~2cw1005型硅电压调整二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/22-1994 |
Semiconductor discrete device. Detail specification for silicon tuning varactor diode for type 2CC51E 半导体分立器件 2cc51e型硅电调变容二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/2-1994 |
Semiconductor discret device. Detail specification for type 3CK2904, 3CK2904A, 3CK2905 and 3CK2905A PNP silicon cow-power switching transistor 半导体分立器件 3ck2904(2904a、2905和2905a)型pnp硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/21-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ75 半导体分立器件 2cz75型硅开关整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/20-1994 |
Semiconductor discrete device. Detail specification for silicon rectifier diode for type 2CZ101 半导体分立器件 2cz101型硅开关整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/19-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ74 半导体分立器件 2cz74型硅开关整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033/18-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ73 半导体分立器件 2cz73型硅开关整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033.56-1994 |
Semiconductor discrete device. Detail specification for type 2CK85 silicon switching diode 半导体分立器件 2ck85型硅开关二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033.55-1994 |
Semiconductor discrete device. Detail specification for type 2CK82 silicon switching diode 半导体分立器件 2ck82型硅开关二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033.50-1994 |
Semiconductor discrete device. Detail specification for type QL73 silicon three phase full wave bridge rectifier 半导体分立器件 ql73型硅三相桥式整流器详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033.48-1994 |
Semiconductor discrete device. Detail specification for type 2DV8CP silicon microwave detector diode 半导体分立器件 2dv8cp型硅微波检波二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033.47-1994 |
Semiconductor discrete device. Detail specification for type 2CZ117 silicon rectifier diode 半导体分立器件 2cz117型硅整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033.46-1994 |
Semiconductor discrete device. Detail specification for type 2CZ59 silicon rectifier diode 半导体分立器件 2cz59型硅整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033.45-1994 |
Semiconductor discrete device. Detail specification for type 2CZ58 silicon rectifier diode 半导体分立器件 2cz58型硅整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033.44-1994 |
Semiconductor discrete device. Detail specification for type 2CZ105 silicon witching rectifier diode 半导体分立器件 2cz105型硅开关整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 50033.43-1994 |
Semiconductor discrete device. Detail specification for type 2CZ104 silicon switching rectifier diode 半导体分立器件 2cz104型硅开关整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 31436-1994 |
Requirements of readiness and methods of inspection and assessment for silicon rectifier arc welding machines 硅整流弧焊机完好要求和检查评定方法 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 31096-1994 |
Readiness requirements and methods of inspection and assessment for high-precision silicon wafer grinding machines 精密硅片磨床完好要求和检查评定方法 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20274-1993 |
Semiconductor discrete devices Detail specificion for silicon switching diode for type 2CK84 半导体分立器件2ck84型硅开关二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20188-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550 through 2CZ5554 半导体分立器件 2cw3016~3051型电压调整二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20187-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550~5554 半导体分立器件 2cz5550~5554型硅整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20186-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CW2970~3015 半导体分立器件 2cw2970~3015型硅电压调整二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20177-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637 半导体分立器件 3ck3634~3ck3637型pnp硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 半导体分立器件 3dg3439型和3dg3440型npn硅小功率高反压晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 3dg918型npn硅超高频小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20174-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A 半导体分立器件 3dk2221(2221a、2222、2222a)型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20173-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A 半导体分立器件 3dk2218(2218a、2219、2219a)型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20071-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK4148 半导体分立器件 2ck4148型硅开关二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20070-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK105 半导体分立器件 2ck105型硅开关二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20069-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK76 半导体分立器件 2ck76型硅开关二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20068-1992 |
Semiconductor discrete device. Detail specification for lower noise for silicon voltage reference diode for type 2DW14~18 半导体分立器件 2dw14~18型低噪声硅电压基准二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20067-1992 |
Semiconductor discrete device. Detail specification for type 2CZ30 silicon rectifier diode 半导体分立器件 2cz30型硅整流二极管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20066-1992 |
Semiconductor discrete device. Detail specification for type 2CL3 silicon high voltage rectifier stack 半导体分立器件 2cl3型硅高压整流堆详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20065-1992 |
Semiconductor discrete device. Detail specification for type QL72 silicon three phase full wave bridge rectifier 半导体分立器件 ql72型硅三相桥式整流器详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20064-1992 |
Semiconductor discrete device. Detail specification for type QL71 Silicon single phase full wave bridge rectifier 半导体分立器件 ql71型硅单相桥式整流器详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 半导体分立器件 3dg213型npn硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 半导体分立器件 3dg210型npn硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20061-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146 半导体分立器件 cs146型硅n沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 3dg120型npn硅高频小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 3dg111型npn硅高频小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20058-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK105 半导体分立器件 3dk105型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20057-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK104 半导体分立器件 3dk104型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20056-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK103 半导体分立器件 3dk103型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20055-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK102 半导体分立器件 3dk102型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20054-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK101 半导体分立器件 3dk101型npn硅小功率开关晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
TB/T 2313-1992 |
(Railway signal transformer, relays, silicon rectifier lightning impulse test) 铁路信号用变压器 继电器 硅整流器雷电冲击试验 |
China Railway & Train
Standards RE silicon |
English PDF |
SJ 20016-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes 半导体分立器件 gp、gt和gct级3dg182型npn硅小功率高反压晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 gp、gt和gct级3dg130型npn硅高频小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20014-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power transistor for types 3CG110 GP, GT and types GCT classes 半导体分立器件 gp、gt和gct级3cg110型pnp硅小功率晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20013-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS10 GP, GT and GCT classes 半导体分立器件 gp、gt和gct级cs10型硅n沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20012-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS4 GP, GT and GCT classes 半导体分立器件 gp、gt和gct级cs4型硅n沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ 20011-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS1 GP, GT and GCT classes 半导体分立器件 gp、gt和gct级cs1型硅n沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 10060-1991 |
Detail specification for electronic components. Ambient rated silicon rectifier diode, Type 2CZ117 电子器件详细规范 2cz117型环境额定硅整流二极管 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 10059-1991 |
Detail specification for electronic components. Ambient rated silicon rectifier diode, Type 2CZ116 电子器件详细规范 2cz116型环境额定硅整流二极管 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 10058-1991 |
Detail specification for electronic components. Ambient rated silicon rectifier diode, Type 2CZ103 电子器件详细规范 2cz103型环境额定硅整流二极管 |
China Electronics
Standards RE silicon |
English PDF |
SJ/T 10057-1991 |
Detail specification for electronic component. Case rated silicon rectifier diode, Type 2CZ60 电子器件详细规范 2cz60型管壳额定硅整流二极管 |
China Electronics
Standards RE silicon |
English PDF |
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