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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| QC/T 1136-2020 |
Environmental test requirements and test methods for insulated gate bipolar Transistor (IGBT) modules for electric vehicles {译} 电动汽车用绝缘栅双极晶体管（IGBT）模块环境试验要求及试验方法 |
China Automobile Industry
Standards Transistor |
 English PDF |
| SJ/T 11765-2020 |
Test method for low frequency noise parameters of Transistors {译} 晶体管低频噪声参数测试方法 |
China Electronics Industry
Standards Transistor |
English PDF |
| SJ/T 1839-2016 |
(Semiconductor discrete device 3DK108 silicon NPN low power switching Transistor detailed specification) 半导体分立器件 3dk108型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 1838-2016 |
(Semiconductor discrete device 3DK29 silicon NPN low power switching Transistor detailed specification) 半导体分立器件 3dk29型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 1834-2016 |
(Semiconductor discrete device 3DK104 silicon NPN low power switching Transistor detailed specification) 半导体分立器件 3dk104型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 1833-2016 |
(Semiconductor discrete device 3DK103 silicon NPN low power switching Transistor detailed specification) 半导体分立器件 3dk103型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 1832-2016 |
(Semiconductor discrete device 3DK102 silicon NPN low power switching Transistor detailed specification) 半导体分立器件 3dk102型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 1831-2016 |
(Semiconductor discrete device 3DK28 silicon NPN low power switching Transistor detailed specification) 半导体分立器件 3dk28型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 1830-2016 |
(Semiconductor discrete device 3DK101 silicon NPN low power switching Transistor detailed specification) 半导体分立器件 3dk101型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 1826-2016 |
(Semiconductor discrete device 3DK100 silicon NPN low power switching Transistor detailed specification) 半导体分立器件 3dk100型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 1486-2016 |
(Discrete semiconductor devices 3CG180 silicon PNP frequency high power Transistor backpressure small detail specification) 半导体分立器件 3cg180型硅ｐｎｐ高频高反压小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 1480-2016 |
(Discrete semiconductor devices 3CG130 high frequency low power silicon PNP Transistor detailed specification) 半导体分立器件 3cg130型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 1477-2016 |
(Discrete semiconductor devices 3CG120 high frequency low power silicon PNP Transistor detailed specification) 半导体分立器件 3cg120型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 1472-2016 |
(Discrete semiconductor devices 3CG110 high frequency low power silicon PNP Transistor detailed specification) 半导体分立器件 3cg110型硅pnp高频小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 2214-2015 |
Measuring methods for semiconductor photodiode and photoTransistor 半导体光电二极管和光电晶体管测试方法 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 11516-2015 |
Specification for thin film Transistor (TFT) mask 薄膜晶体管（tft）用掩模版规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 2217-2014 |
(Silicon photoTransistor technical specifications) 硅光电晶体管技术规范 |
China Electronics
Standards Transistor |
English PDF |
| HG/T 4357-2012 |
Polarizer for the thin film Transistor-Liquid crystal display(TFT-LCD) 薄膜晶体管液晶显示器（tft-lcd）用偏光片 |
China Chemical Industry
Standards Transistor |
English PDF |
| SJ 50033/176-2007 |
Semiconductro discrete devices. Detail specification for type 3DA523 silicon microwave pulse power Transistor 半导体分立器件 3da523型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/175-2007 |
Semiconductro discrete devices. Detail specification for type 3DA522 silicon microwave pulse power Transistor 半导体分立器件 3da522型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/174-2007 |
Semiconductro discrete devices. Detail specification for type 3DA521 silicon microwave pulse power Transistor 半导体分立器件 3da521型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/173-2007 |
Semiconductro discrete devices. Detail specification for type 3DA520 silicon microwave pulse power Transistor 半导体分立器件 3da520型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/172-2007 |
Semiconductro discrete devices. Detail specification for type 3DA519 silicon microwave pulse power Transistor 半导体分立器件 3da519型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/171-2007 |
Semiconductro discrete devices. Detail specification for type 3DA518 silicon microwave pulse power Transistor 半导体分立器件 3da518型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/170-2007 |
Semiconductro discrete devices. Detail specification for type 3DA516 silicon microwave pulse power Transistor 半导体分立器件 3da516型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| JJG(SJ)310007-2006 |
Speciation for verification of DC parameter testing system for isolated gate bipolar Transistors |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)310004-2006 |
Specification for verification of Transistor h parameter testers |
China Metrological
Standards Transistor |
English PDF |
| JJG 310007-2006 |
Speciation for verification of DC parameter testing system for isolated gate bipolar Transistors |
China Metrological
Standards Transistor |
English PDF |
| JJG 310004-2006 |
Specification for verification of Transistor h parameter testers |
China Metrological
Standards Transistor |
English PDF |
| SJ 50033/169-2004 |
Semiconductor discrete devices. Detail specification for type 3DA510 silicon microwave pulse power Transistor 半导体分立器件3da510型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/168-2004 |
Semiconductor discrete devices. Detail specification for type 3DA509 silicon microwave pulse power Transistor 半导体分立器件3da509型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/167-2004 |
Semiconductor discrete devices. Detail specification for type 3DA508 silicon microwave pulse power Transistor 半导体分立器件3da508型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/166-2004 |
Semiconductor discrete devices. Detail specification for type 3DA507 silicon microwave pulse power Transistor 半导体分立器件3da507型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/163-2003 |
Semiconductor discrete device. Detail specification of type 3DK457 for power switching Transistors 半导体分立器件3dk457型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SN/T 1175-2003 |
Methods for the inspection of thin film Transistor color liquid crystal display devices for import and export 进出口薄膜晶体管彩色液晶显示器检验方法 |
China Import Export Inspection
Standards Transistor |
English PDF |
| SJ 50033/160-2002 |
Semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power Transistor 半导体分立器件 3dg122型硅超高频小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/159-2002 |
Semiconductor discrete devices. Detail specification for type 3DG142 silicon UHF low-noise Transistor 半导体分立器件 3dg142型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/158-2002 |
Semiconductor discrete devices. Detail specification for type 3DG44 silicon UHF low-noise Transistor 半导体分立器件 3dg44型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/157-2002 |
Semiconductor discrete devices. Detail specification for type 3DA506 silicon microwave pulse power Transistor 半导体分立器件 3da506型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/156-2002 |
Semiconductor discrete devices. Detail specification for type 3DA505 silicon microwave pulse power Transistor 半导体分立器件 3da505型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/155-2002 |
Semiconductor discrete devices. Detail specification for type 3DG252 sillcon microwave linearity Transistor 半导体分立器件 3dg252型硅微波线性晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/154-2002 |
Semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise Transistor 半导体分立器件 3dg251型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50597/53-2000 |
Semiconductor integrated circuits. Detail specification for Type JB3081, JB3082 Transistor arrays 半导体集成电路jb3081、jb3082型晶体管阵列详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/148-2000 |
Semiconductor discrete devices. Detail specification for type 3DK35B~F power switching Transistors 半导体分立器件3dk35b—f型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/146-2000 |
Semiconductor discrete devices. Detail specification for type 3DA601 C band silicon bipolar power Transistor 半导体分立器件3da601型c波段硅双极型功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/145-2000 |
Semiconductor discrete devices. Detail specification for type 3DA503 silicon microwave pulse power Transistor 半导体分立器件3da503型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20789-2000 |
Rapid screening test methods for Thermal sensitive parameter of MOS field effect Transistor mos场效应晶体管热敏参数快速筛选试验方法 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 11227-2000 |
Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power Transistor 电子元器件详细规范 3da98型npn硅高频大功率晶体管 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 11226-2000 |
Detail specification for electronic components Type 3DA505 L band silicon pulse power Transistor 电子元器件详细规范 3da505型l波段硅脉冲功率晶体管 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 11225-2000 |
Detail specification for electronic components Type 3DA504 S band silicon pulse power Transistor 电子元器件详细规范 3da504型s波段硅脉冲功率晶体管 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/140-1999 |
Semiconductor discrete devices. Detail specification for type 3DA502 silicon microwave pulse power Transistor 半导体光电子器件3da502型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/134-1997 |
Semiconductor discrete devices. Detail specification for type 3DD167 low -- Frequency and high -- Power Transistor 半导体分立器件3dd167型低频大功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/132-1997 |
Semiconductor discrete devices. Detail specification for type 3DD260 low -- Frequency and high -- Power Transistor 半导体分立器件3dd260型低频大功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/131-1997 |
Semiconductor discrete devices. Detail specification for type 3DD157 low -- Frequency and high -- Power Transistor 半导体分立器件3dd157型低频大功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/130-1997 |
Semiconductor discrete devices. Detail specification for type 3DD159 low -- Frequency and high -- Power Transistor 半导体分立器件3dd159型低频大功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/129-1997 |
Semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high -- Power Transistor 半导体分立器件3dd155型低频大功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/122-1997 |
Semiconductor discrete devices. Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect Transistors 半导体分立器件cs3684～cs3687型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/121-1997 |
Semiconductor discrete devices. Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect Transistors 半导体分立器件cs3458～cs3460型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/120-1997 |
Semiconductor discrete devices. Detail specification for type CS205 GaAs microwave power field effect Transistor 半导体分立器件cs205型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/119-1997 |
Semiconductor discrete devices. Detail specification for type CS204 GaAs microwave power field effect Transistor 半导体分立器件cs204型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/111-1996 |
Semiconductor optoelectronic devices. Detail specification for type GT16 Si.NPN photoTransistor 半导体光电子器件 ｇｔ１６型硅ｎｐｎ光电晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/106-1996 |
Semiconductor discrete device. Detail specification for type CS203 GaAs microwave low noise field effect Transistor 半导体分立器件 ｃｓ２０３型砷化镓微波低噪声场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/105-1996 |
Semiconductor discrete device Detail specification for type 3DK404 power switching Transistor 半导体分立器件 ３ｄｋ４０４型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/104-1996 |
Semiconductor discrete device. Detail specification for type 3DK002 power switching Transistor 半导体分立器件 ３ｄｋ００２型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/103-1996 |
Semiconductor discrete device. Detail specification for type 3DA89 high-frequency power Transistor 半导体分立器件 ３ｄａ８９型高频功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair Transistor 半导体分立器件 ３ｄｇ２１６型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power Transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power Transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power Transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/92-1995 |
Semiconductor discrete device. Detail specification for type 3CD100 low-frequency and high-power Transistor 半导体分立器件 ３ｃｄ１００型低频大功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/91-1995 |
Semiconductor discrete device. Detail specification for type 3CD030 low-fyequency and high-power Transistor 半导体分立器件 ３ｃｄ０３０型低频大功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/90-1995 |
Semiconductor discrete device. Detail specification for type 3DK106 NPN silicon low -- Power switching Transistor 半导体分立器件 ３ｄｋ１０６型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/89-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ６７６8and ＣＳ６７70 silicon N-channel deplition mode field-effect Transistor 半导体分立器件 ｃｓ６７６８和ｃｓ６７７０型硅ｎ沟道增强型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/88-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ６７６０and ＣＳ６７６２ silicon N-channel deplition mode field-effect Transistor 半导体分立器件 ｃｓ６７６０和ｃｓ６７６２型硅ｎ沟道增强型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/87-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ４０９１~ＣＳ４０９３ silicon N-channel deplition mode field-effect Transistor 半导体分立器件 ｃｓ４０９１～ｃｓ４０９３型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/86-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ５１１４~ＣＳ５１１６ silicon P-channel deplition mode field-effect Transistor 半导体分立器件 ｃｓ５１１４～ｃｓ５１１６型硅ｐ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/85-1995 |
Semiconductor discrete device. Detail specification for type CS141 silicon N-channel MOS enhancement mode field-effect Transistor 半导体分立器件 ｃｓ１４１型硅ｎ沟道ｍｏｓ耗尽型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/84-1995 |
Semiconductor discrete device. Detail specification for type CS140 silicon N-channel MOS enhancement mode field-effect Transistor 半导体分立器件 ｃｓ１４０型硅ｎ沟道ｍｏｓ耗尽型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/83-1995 |
Semiconductor discrete device. Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect Transistor 半导体分立器件 ｃｓ１３９型硅ｐ沟道ｍｏｓ增强型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/82-1995 |
Semiconductor discrete device. Detail specification for type 3DK100 NPN silicon low-power switching Transistor 半导体分立器件 ３ｄｋ１００型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/68-1995 |
Semiconductor discrete device. Detail specification for type BT51 NPN silicon small power difference matchen -- Pair Transistor 半导体分立器件 ｂｔ５１型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20514-1995 |
Specification for silicon epitaxial wafer for microwave power Transistor 微波功率晶体管用硅外延片规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/67-1995 |
Semiconductor discrete device. Detail specification for type 3CD103 High. Voltage low. Frequency and high. Power Transistor 半导体分立器件 ３ｄｄ１０３型高压低频大功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/66-1995 |
Semiconductor discrete device. Detail specification for type 3CD880 Low. Frequency and high. Power Transistor 半导体分立器件 ３ｄｄ８８０型低频大功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/65-1995 |
Semiconductor discrete device. Detail specification for type 3DD175 Low. Frequency and high. Power Transistor 半导体分立器件 ３ｄｄ１７５型低频大功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/64-1995 |
Semiconductor discrete device. Detail specification for type 3CD010 Low. Frequency and high. Power Transistor 半导体分立器件 ３ｃｄ０１０型低频大功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/63-1995 |
Semiconductor discrete device. Detail specification for type 3CD020 Low. Frequency and high. Power Transistor 半导体分立器件 ３ｃｄ０２０型低频大功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/62-1995 |
Semiconductor discrete device Detail specification for type 3DK406 high. Voltage and power switching Transistor 半导体分立器件 ３ｄｋ４０６型高压功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/61-1995 |
Semiconductor discrete device. Detail specification for type 3DK6547 high. Voltage and power switching Transistor 半导体分立器件 ３ｄｋ６５４７型高压功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/60-1995 |
Semiconductor discrete device. Detail specification for type 3DK40 power switching Transistor 半导体分立器件 ３ｄｋ４０型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/59-1995 |
Semiconductor discrete device. Detail specification for type 3DK39 power switching Transistor 半导体分立器件 ３ｄｋ３９型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| JJG(SJ)04056-1995 |
(QO5-C-type Transistor switching device safe operating area test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04055-1995 |
(QO5-A, B-type Transistor DC, pulse device safe operating area test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04052-1995 |
(PTQ-2-type Transistor rapid screening instrument test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04049-1995 |
(National Yang CX dual gate field effect Transistor tester test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04048-1995 |
(QG-29-type high-frequency Transistors Gf (Kf), F (Nf), AGC tester test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04047-1995 |
(QG-6, QG-16-type high-frequency low-power Transistors ft parameter tester test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04046-1995 |
(QC-13-type field effect Transistor transconductance parameter tester test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04045-1995 |
(JS-7B Transistor tester test procedures) |
China Metrological
Standards Transistor |
English PDF |
| SJ 50033/9-1994 |
Discrete semiconductor devices Detailed specifications for 3DK206 power switching Transistors 半导体分立器件 ３ｄｋ２０６型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/8-1994 |
Discrete semiconductor devices Detailed specifications for 3DK12 power switching Transistors 半导体分立器件 ３ｄｋ２０５型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/38-1994 |
Semiconductor discrete device. Detail specification for type CS4856~CS4861 silicon N-channel deplition mode field-effect Transistor 半导体分立器件 ｃｓ４８５６～ｃｓ４８６１型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/37-1994 |
Semiconductor discrete device. Detail specification for type 3DD164 power Transistor 半导体分立器件 ３ｄｄ１６４型功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/36-1994 |
Semiconductor discrete device. Detail specification for type 3CD050 power Transistor 半导体分立器件 ３ｃｄ０５０型功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/34-1994 |
Semiconductor discrete device. Detail specification for type FH129 NPN silicon power Darlington Transistor 半导体分立器件 ｆｈ１２９型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/33-1994 |
Semiconductor discrete device. Detail specification for type FH121 NPN silicon power Darlington Transistor 半导体分立器件 ｆｈ１２１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/32-1994 |
Semiconductor discrete device. Detail specification for type 3DK312 power switching Transistor 半导体分立器件 ３ｄｋ３１２型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/31-1994 |
Semiconductor discrete device. Detail specification for type FH101 NPN silicon power Darlington Transistor 半导体分立器件 ｆｈ１０１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/30-1994 |
Semiconductor discrete device. Detail specification for type 3DD155 power Transistor 半导体分立器件 ３ｄｄ１５５型功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/24-1994 |
Discrete semiconductor devices Detailed specifications for 3DK310 power switching Transistors 半导体分立器件 ３ｄｋ３１０型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/23-1994 |
Discrete semiconductor devices Detailed specifications for 3DK309 power switching Transistors 半导体分立器件 ３ｄｋ３０９型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/2-1994 |
Semiconductor discret device. Detail specification for type 3CK2904, 3CK2904A, 3CK2905 and 3CK2905A PNP silicon cow-power switching Transistor 半导体分立器件 ３ｃｋ２９０４（２９０４ａ、２９０５和２９０５ａ）型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/17-1994 |
Discrete semiconductor devices Detailed specifications for 3DK308 power switching Transistors 半导体分立器件 ３ｄｋ３０８型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/16-1994 |
Discrete semiconductor devices Detailed specifications for 3DK307 power switching Transistors 半导体分立器件 ３ｄｋ３０７型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/15-1994 |
Discrete semiconductor devices Detailed specifications for 3DK306 power switching Transistors 半导体分立器件 ３ｄｋ３０６型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/14-1994 |
Discrete semiconductor devices Detailed specifications for 3DK305 power switching Transistors 半导体分立器件 ３ｄｋ３０５型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/13-1994 |
Discrete semiconductor devices Detailed specifications for 3DK210 power switching Transistors 半导体分立器件 ３ｄｋ２１０型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/12-1994 |
Discrete semiconductor devices Detailed specifications for 3DK209 power switching Transistors 半导体分立器件 ３ｄｋ２０９型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/1-1994 |
Semiconductor discrete device. Detail specification for type 3DA150 high frequency and power Transistor 半导体分立器件 ３ｄａ１５０型高频功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/11-1994 |
Discrete semiconductor devices Detailed specifications for 3DK208 power switching Transistors 半导体分立器件 ３ｄｋ２０８型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033/10-1994 |
Discrete semiconductor devices Detailed specifications for 3DK207 power switching Transistors 半导体分立器件 ３ｄｋ２０７型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033.54-1994 |
Semiconductor discrete device. Detail specification for type CS0532 GaAs microwave Power field effect Transistor 半导体分立器件 ｃｓ０５３２型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033.53-1994 |
Semiconductor discrete device. Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect Transistor 半导体分立器件 ｃｓ０５３０、ｃｓ０５３１型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033.52-1994 |
Semiconductor discrete device. Detail specification for type CS0529 GaAs microwave Power field effect Transistor 半导体分立器件 ｃｓ０５２９型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 50033.40-1994 |
Detail specification for type GT11 semiconductor sililcon NPN photo-Transistor gt11型半导体硅npn光敏晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ/T 31076-1994 |
Requirements of readiness and methods of inspection and assessment for low power Transistor capping machines 小功率晶体管封帽机完好要求和检查评定方法 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20310-1993 |
Detail specification for types 3DD101 power Transistor 半导体分立器件 ３ｄｄ１０１型功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20309-1993 |
Detail specification for types 3DK10 power Darlington Transistor 半导体分立器件 ３ｄｋ１０型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20308-1993 |
Detail specification for type FH1025 PN silicon power Darlington Transistor 半导体分立器件 ｆｈ１０２５型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20307-1993 |
Detail specification for types FH646 PN silicon power Darlington Transistor 半导体分立器件 ｆｈ６４６型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20306-1993 |
Detail specification for types FH181A NPN silicon power Darlington Transistor 半导体分立器件 ｆｈ１８１ａ型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20184-1992 |
Semiconductor discrete device Detail specification for field-effect Transistor of types CS3821, 3822, 3823 半导体分立器件 ｃｓ３８２１、３８２２、３８２３型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20183-1992 |
Semiconductor discrete device Detail specification for type 3DD6 power Transistor 半导体分立器件 ３ｄｄ６型功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20178-1992 |
Semiconductor discrete device Detail specification for type 3CK38 power swithing Transistor 半导体分立器件 ３ｃｋ３８型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20177-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power switching Transistor for type 3CK3634~3CK3637 半导体分立器件 ３ｃｋ３６３４～３ｃｋ３６３７型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage Transistor of types 3DG3499 and 3DG3440 半导体分立器件 ３ｄｇ３４３９型和３ｄｇ３４４０型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power Transistor of type 3DG918 半导体分立器件 ３ｄｇ９１８型ｎｐｎ硅超高频小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20174-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing Transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A 半导体分立器件 ３ｄｋ２２２１（２２２１ａ、２２２２、２２２２ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20173-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing Transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A 半导体分立器件 ３ｄｋ２２１８（２２１８ａ、２２１９、２２１９ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20172-1992 |
Semiconductor discrete device Detail specification for type 3DK38 power swithing Transistor 半导体分立器件 ３ｄｋ３８型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20171-1992 |
Semiconductor discrete device Detail specification for type 3DK51 power switching Transistor 半导体分立器件 ３ｄｋ５１型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20170-1992 |
Semiconductor discrete device Detail specification for type 3DK37 power switching Transistor 半导体分立器件 ３ｄｋ３７型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20169-1992 |
Semiconductor discrete device Detail specification for type 3DK36 power switching Transistor 半导体分立器件 ３ｄｋ３６型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20168-1992 |
Semiconductor discrete device Detail specification for type 3DK12 power switching Transistor 半导体分立器件 ３ｄｋ１２型功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match Transistor of type 3DG213 半导体分立器件 ３ｄｇ２１３型ｎｐｎ硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match Transistor of type 3DG210 半导体分立器件 ３ｄｇ２１０型ｎｐｎ硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20061-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect Transistor of type CS146 半导体分立器件 ｃｓ１４６型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power Transistor of type 3DG120 半导体分立器件 ３ｄｇ１２０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power Transistor of type 3DG111 半导体分立器件 ３ｄｇ１１１型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20058-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching Transistor of type 3DK105 半导体分立器件 ３ｄｋ１０５型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20057-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching Transistor of type 3DK104 半导体分立器件 ３ｄｋ１０４型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20056-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching Transistor of type 3DK103 半导体分立器件 ３ｄｋ１０３型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20055-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching Transistor of type 3DK102 半导体分立器件 ３ｄｋ１０２型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20054-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching Transistor of type 3DK101 半导体分立器件 ３ｄｋ１０１型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20016-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage Transistor for types 3DG182 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１８２型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power Transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１３０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20014-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power Transistor for types 3CG110 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｃｇ１１０型ｐｎｐ硅小功率晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20013-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect Transistor of types CS10 GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｃｓ１０型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20012-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect Transistor of types CS4 GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｃｓ４型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| SJ 20011-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect Transistor of types CS1 GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｃｓ１型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Transistor |
English PDF |
| JJG 725-1991 |
Verification Reulation of DC and LF Characterization Tester for Transistor 晶体管直流和低频参数测试仪检定规程 |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04026-1989 |
(BJ2985-type Transistor to maintain voltage tester test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04025-1989 |
(Q04-type medium power Transistor switching device parameter measurement standard verification procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04022-1989 |
Specification for verification of Q01 model high frequency low power triode Transistor Ft standard measurement meters |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04020-1989 |
Specification for verification of sample Transistor specially intended to measure the noise factor of high frequency medium and low power triode transistor |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04019-1988 |
(BJ2902-type bipolar Transistor H , V (subscript BE (sat)), V (subscript CE (sat)) standard instrument pilot test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04018-1988 |
(BJ2901-type bipolar Transistor reverse breakdown voltage of a standard instrument pilot test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04017-1988 |
(BJ2900-type bipolar Transistor cut-off current measurement standard instrument pilot test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04016-1988 |
(BJ2984 (QR-3)-type Transistor transient thermal resistance tester pilot test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04015-1988 |
(QZ3, QZ4 NF-frequency power Transistor tester small pilot test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04014-1988 |
(Transistor curve tracers pilot test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04012-1987 |
(BJ3022 (QJ30) low-frequency power Transistor F Test pilot test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04011-1987 |
Trial specification for verification of QG21-QG25 high frequency low-power Transistor F testers |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04010-1987 |
(BJ2961 Transistor integrated circuit dynamic parameter tester trial test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04009-1987 |
(BJ2983-type Transistor being biased second breakdown tester pilot test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04007-1987 |
(BJ2950A (JS-4A) Transistor operating voltage tester pilot test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04005-1987 |
(JSS-4A Transistor low-frequency H-parameter test pilot test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04004-1987 |
(BJ2911 integrated parameters (HQ-1B)-type Transistor tester pilot test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04003-1987 |
(BJ2952A (JS-3A) Transistor reverse breakdown voltage tester pilot test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04002-1987 |
(BJ3030-frequency low-power Transistor C . R product testers trial test procedures) |
China Metrological
Standards Transistor |
English PDF |
| JJG(SJ)04001-1987 |
Trial specification for verification of JS-2C model Transistor reverse cut-off current testers |
China Metrological
Standards Transistor |
English PDF |
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