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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ 51864/2-2004 |
Detail specification for type LGC2B2520, LGC2B2012, LGC2B1608 RF wire wound chip inductors lgc2b2520、lgc2b2012、lgc2b1608射频绕线片式电感器详细规范 |
China Electronics
Standards 252 |
 English PDF |
| SJ 50033/155-2002 |
Semiconductor discrete devices. Detail specification for type 3DG252 sillcon microwave linearity transistor 半导体分立器件 3dg252型硅微波线性晶体管详细规范 |
China Electronics
Standards 252 |
English PDF |
| SJ 50033/113-1996 |
Semiconductor discrete device. Detail specification for type GD3252Y photodiodes 半导体光电子器件 ｇｄ３２５２ｙ型光电二极管详细规范 |
China Electronics
Standards 252 |
English PDF |
| DL/T 405-1996 |
Technical specifications for import 252 (245)~550kV a. c. high-voltage circuit-breakers and disconnectors 进口252(245)～550kV交流高压断路器和隔离开关技术规范 |
China Electricity & Power
Standards 252 |
English PDF |
| SJ 20296-1993 |
Detail specification for type JF2500 and JF2520 high slew rate operational amplifiers of semiconductor integrated circuits 半导体集成电路ｊｆ２５００、ｊｆ２５２０型高转换速率运算放大器详细规范 |
China Electronics
Standards 252 |
English PDF |
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