Cart:
Keyword:
| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| YD/T 2806-2015 |
(Cloud Infrastructure as a Service (IAAS) functional requirements and architecture) 云计算基础设施即服务（iaas）功能要求与架构 |
China Telecommunication
Standards AAS |
 English PDF |
| SJ/T 11488-2015 |
Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GAAS single crystals 半绝缘砷化镓电阻率、霍尔系数和迁移率测试方法 |
China Electronics
Standards AAS |
English PDF |
| SN/T 2886-2011 |
Food contact materials for export. Glasswork. Determination of lead and cadmium in food simulants. Flame atomic absorption spectrometry (FAAS) 出口食品接触材料 玻璃容器类模拟物中铅、镉溶出测定 原子吸收光谱法 |
China Import Export Inspection
Standards AAS |
English PDF |
| SJ/T 11427-2010 |
GNSS-based precision approach local area augmentation system (LAAS) signal-in-space interface control document 基于gnss精密进近局域增强系统（laas）的空间信号格式 |
China Electronics
Standards AAS |
English PDF |
| SH/T 0605-2008 |
Standard test method for determination of molybdenum in lubricant and additive by atomic absorption spectrometry (AAS) 润滑油及添加剂中钼含量的测定 原子吸收光谱法 |
China Petrochemical Industry
Standards AAS |
English PDF |
| SN/T 1830-2006 |
Determination of calcium,iron,nickel,sodium in petroleun coke. Automic absorption spectrometry(AAS) 石油焦炭中钙、铁、镍、钠含量测定原子吸收光谱法（aas） |
China Import Export Inspection
Standards AAS |
English PDF |
| SJ 50033/141-1999 |
Semiconductor discrete devices. Detail specification for type 2EK150 FAAS high speed switching diode 半导体光电子器件2ek150型砷化镓高速开关二极管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033/120-1997 |
Semiconductor discrete devices. Detail specification for type CS205 GAAS microwave power field effect transistor 半导体分立器件cs205型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033/119-1997 |
Semiconductor discrete devices. Detail specification for type CS204 GAAS microwave power field effect transistor 半导体分立器件cs204型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033/118-1997 |
Semiconductor discrete devices. Detail specification for type 2EK31 GAAS switching diode 半导体分立器件2ek31型砷化镓开关二极管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033/106-1996 |
Semiconductor discrete device. Detail specification for type CS203 GAAS microwave low noise field effect transistor 半导体分立器件 ｃｓ２０３型砷化镓微波低噪声场效应晶体管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033/102-1995 |
Detail specification for InGAAS/InP photodiode for type GD 218 ｇｄ２１８型ｉｎｇａａｓ／ｉｎｐ ｐｉｎ光电二极管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033/81-1995 |
Semiconductor discrete devices. Detail specification for type CS0524 GAAS microwave FET 半导体分立器件 ｃｓ０５２４型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033/80-1995 |
Semiconductor discrete devices. Detail specification for type CS0513 GAAS microwave FET 半导体分立器件 ｃｓ０５１３型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033/79-1995 |
Semiconductor discrete devices. Detail specification for type CS0536 GAAS microwave power FET 半导体分立器件 ｃｓ０５３６型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033/78-1995 |
Semiconductor discrete devices. Detail specification for type CS0464 GAAS microwave FET 半导体分立器件 ｃｓ０４６４型砷化镓微波场效应晶体管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033/42-1994 |
Semiconductor discrete device. Detail specification for type CS0467 GAAS microwave FET 半导体分立器件 ｃｓ０４６７型砷化镓微波场效应晶体管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033/29-1994 |
Semiconductor discrete device. Detail specification for GAAS high-speed switching assembly for type EK20 半导体分立器件 ｅｋ２０型砷化镓高速开关组件详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033/27-1994 |
Semiconductor discrete device. Detail specification for GAAS varactor diodes for 2EC600 series 半导体分立器件 ２ｅｃ６００系列砷化镓变容二极管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033.54-1994 |
Semiconductor discrete device. Detail specification for type CS0532 GAAS microwave Power field effect transistor 半导体分立器件 ｃｓ０５３２型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033.53-1994 |
Semiconductor discrete device. Detail specification for type CS0530 and CS0531 GAAS microwave Power field effect transistor 半导体分立器件 ｃｓ０５３０、ｃｓ０５３１型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033.52-1994 |
Semiconductor discrete device. Detail specification for type CS0529 GAAS microwave Power field effect transistor 半导体分立器件 ｃｓ０５２９型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards AAS |
English PDF |
| SJ 50033.51-1994 |
Semiconductor discrete devices. Detail specification for type CS0558 GAAS microwave dual gate FET 半导体分立器件 ｃｓ０５５８型砷化镓微波双栅场效应晶体管详细规范 |
China Electronics
Standards AAS |
English PDF |
| Find out:23Items | To Page of: First -Previous-Next -Last | 1 |
+86-755-25831330
