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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ/T 1486-2016 |
(Discrete semiconductor devices 3CG180 silicon PNP frequency high power transistor backpressure small detail specification) 半导体分立器件 3cg180型硅ｐｎｐ高频高反压小功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
 English PDF |
| SJ/T 1480-2016 |
(Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg130型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ/T 1477-2016 |
(Discrete semiconductor devices 3CG120 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg120型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ/T 1472-2016 |
(Discrete semiconductor devices 3CG110 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg110型硅pnp高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20989-2008 |
Capacitors, electrolytic (nonsolid electrolyte), tantalum, combined, high capacitance type CA35N detail specification for ca35n型组合式非固体电解质钽电容器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 54409/6-2005 |
Detail specification of high temperature absolute pressure sensor for series CY-YZ-007 cy-yz-007系列高温绝压传感器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 54409/5-2005 |
Detail specification of high temperature defferential pressure sensor for series CY-YZ-006 cy-yz-006系列高温差压传感器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 54409/4-2005 |
Detail specification of high temperature gauge pressure sensor for series CY-YZ-005 cy-yz-005系列高温表压传感器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ/T 11309-2005 |
frequency analogue and digital high speed data applications. Part 4-104:printed board connectors with assessed quality-detail specification for two-part modular connectors, basic grid of 2.0 mm, with terminations on a multiple gird of 0.5 mm 直流和低频模拟及数字式高速数据处理设备用连接器 第4-104部分:有质量评定的印制板连接器 基本网格为2.0mm 接端网格为0.5mm倍数的两件式组合连接器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ/T 11307-2005 |
Connectors with assessed quality, for use in d.c., low-frequency analogue and in digital high-speed data applications. Part 4: Printed board connectors. Section 001:Blank detail specification 有质量评定的直流和低频模拟及数字式高速数据处理设备用连接器 第4部分:印制板连接器 第001篇:空白详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50676/6-2003 |
Circulators, high power, waveguide junction, type HBG008B, HBG008C, detail specification for hbg008b、hbg008c型高功率结型波导环行器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 51042/3-2002 |
Detail specification for model JQX-40M, micro-miniature, high power, hermetically sealed, d.c., electromagnetic relays jqx-40m型小型大功率密封直流电磁继电器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 51929/11-2000 |
Resistors, fixed, metal film, high stability, style RJ58, detail specification for rj58型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 51929/10-2000 |
Resistors, fixed, metal film, high stability, style RJ57, detail specification for rj57型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ/T 11227-2000 |
Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 电子元器件详细规范 3da98型npn硅高频大功率晶体管 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/141-1999 |
Semiconductor discrete devices. Detail specification for type 2EK150 FaAs high speed switching diode 半导体光电子器件2ek150型砷化镓高速开关二极管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20724-1998 |
Detail specification for type GC2004 optoelectronic isolator assembly for multi-channel high-speed data gg2240型多路高速数据光电隔离组件详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50676/5-1998 |
Circulator, RF, high power, waveguide junction, 3cm, type HBG008A, detail specification for hbg008a型三厘米高功率结型波导射频环行器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 51929/9-1997 |
Resistors, fixed, metal film, high stability, style RJ23, detail specification for ｒｊ23型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/134-1997 |
Semiconductor discrete devices. Detail specification for type 3DD167 low -- Frequency and high -- Power transistor 半导体分立器件3dd167型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/132-1997 |
Semiconductor discrete devices. Detail specification for type 3DD260 low -- Frequency and high -- Power transistor 半导体分立器件3dd260型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/131-1997 |
Semiconductor discrete devices. Detail specification for type 3DD157 low -- Frequency and high -- Power transistor 半导体分立器件3dd157型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/130-1997 |
Semiconductor discrete devices. Detail specification for type 3DD159 low -- Frequency and high -- Power transistor 半导体分立器件3dd159型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/129-1997 |
Semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high -- Power transistor 半导体分立器件3dd155型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ/T 10995-1996 |
Detail specification for electronic components High Voltage ceramic capacitors type CT81 Assessment level E 电子器件详细规范 ｃｔ８１型高压瓷介电容器 评定水平ｅ（可供认证用） |
China Electronics
Standards Detail specification high |
English PDF |
| SJ/T 10994-1996 |
Detail specification for electronic components High Voltage ceramic capacitors type CC81 Assessment level E 电子器件详细规范 ｃｃ８１型高压瓷介电容器 评定水平ｅ（可供认证用） |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 51929/3-1996 |
Resistors, fixed, metal film, high stability, style RJ25, detail specification for ｒｊ２５型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 51929/2-1996 |
Resistors, fixed, metal film, high stability, style RJ24, detail specification for ｒｊ２４型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/103-1996 |
Semiconductor discrete device. Detail specification for type 3DA89 high-frequency power transistor 半导体分立器件 ３ｄａ８９型高频功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/92-1995 |
Semiconductor discrete device. Detail specification for type 3CD100 low-frequency and high-power transistor 半导体分立器件 ３ｃｄ１００型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/91-1995 |
Semiconductor discrete device. Detail specification for type 3CD030 low-fyequency and high-power transistor 半导体分立器件 ３ｃｄ０３０型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor 半导体分立器件 ３ｄｇ１３５型硅超高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 51929.8-1995 |
Resistors, fixed, metal film, high stability, style RJ56. Detail specification rj56型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 51929.7-1995 |
Resistors, fixed, metal film, high stability, style RJ55. Detail specification rj55型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 51929.6-1995 |
Resistors, fixed, metal film, high stability, style RJ54. Detail specification rj54型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 51929.5-1995 |
Resistors, fixed, metal film, high stability, style RJ53. Detail specification rj53型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 51929.4-1995 |
Resistors, fixed, metal film, high stability, style RJ52. Detail specification rj52型高稳定金属膜固定电阻器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20476.2-1995 |
Detail specification for gas discharge tubes for high energy ignition of type R2100 R2100型高能点火气体放电管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20476.1-1995 |
Detail specification for gas discharge tubes for high energy ignition of type R2400A R2400A型高能点火气体放电管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/67-1995 |
Semiconductor discrete device. Detail specification for type 3CD103 High. Voltage low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１０３型高压低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/66-1995 |
Semiconductor discrete device. Detail specification for type 3CD880 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ８８０型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/65-1995 |
Semiconductor discrete device. Detail specification for type 3DD175 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１７５型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/64-1995 |
Semiconductor discrete device. Detail specification for type 3CD010 Low. Frequency and high. Power transistor 半导体分立器件 ３ｃｄ０１０型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/63-1995 |
Semiconductor discrete device. Detail specification for type 3CD020 Low. Frequency and high. Power transistor 半导体分立器件 ３ｃｄ０２０型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/62-1995 |
Semiconductor discrete device Detail specification for type 3DK406 high. Voltage and power switching transistor 半导体分立器件 ３ｄｋ４０６型高压功率开关晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/61-1995 |
Semiconductor discrete device. Detail specification for type 3DK6547 high. Voltage and power switching transistor 半导体分立器件 ３ｄｋ６５４７型高压功率开关晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50597/25-1994 |
Semiconductor integrated circuits Detail specification for type JF7650 CMOS operational amplifier with high accuracy 半导体集成电路 ｊｆ７６５０型ｃｍｏｓ高精度运算放大器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50597/24-1994 |
Semiconductor integrated circuits Detail specification of type JF3140 and JF3140A BiMOS operational amplifiers with high input impedence 半导体集成电路 ｊｆ３１４０、ｊｆ３１４０ａ型ｂｉｍ０ｓ高输入阻抗运算放大器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50597/13-1994 |
Detail specification for hybrid microcircuits HSH4860 high speed, precision sample/hold amplifier 混合微电路详细规范 ｈｓｈ４８６０型高速精密采样／保持放大器 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50597.5-1994 |
Detail specification for types JF725 and JF725A high accuracy operational amplifiers of semiconductor integrated circuits 半导体集成电路 ｊｆ７２５、ｊｆ７２５ａ型高精度运算放大器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/35-1994 |
Detail specification for type GH30 semiconductor high speed optocoupler ｇｈ３０型半导体高速光耦合器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/29-1994 |
Semiconductor discrete device. Detail specification for GaAs high-speed switching assembly for type EK20 半导体分立器件 ｅｋ２０型砷化镓高速开关组件详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 50033/1-1994 |
Semiconductor discrete device. Detail specification for type 3DA150 high frequency and power transistor 半导体分立器件 ３ｄａ１５０型高频功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20339-1993 |
Detail specification for high power electrical dummy losd for 3cm aluminium waveguide ３ｃｍ铝波导高功率假负载详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20296-1993 |
Detail specification for type JF2500 and JF2520 high slew rate operational amplifiers of semiconductor integrated circuits 半导体集成电路ｊｆ２５００、ｊｆ２５２０型高转换速率运算放大器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 半导体分立器件 ３ｄｇ３４３９型和３ｄｇ３４４０型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 ３ｄｇ９１８型ｎｐｎ硅超高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20087-1992 |
Detail specification capacitors, fixed, ceramic dielectric, high voltage type CT8112 ｃｔ８１１２型高压瓷介固定电容器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20086-1992 |
Detail specification capacitors, fixed, ceramic dielectric, high voltage type CT8110 ｃｔ８１１０型高压瓷介固定电容器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20085-1992 |
Detail specification capacitors, fixed, ceramic dielectric, high voltage type CT8108 ｃｔ８１０８型高压瓷介固定电容器详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20066-1992 |
Semiconductor discrete device. Detail specification for type 2CL3 silicon high voltage rectifier stack 半导体分立器件 ２ｃｌ３型硅高压整流堆详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 半导体分立器件 ３ｄｇ２１３型ｎｐｎ硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 半导体分立器件 ３ｄｇ２１０型ｎｐｎ硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 ３ｄｇ１２０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 ３ｄｇ１１１型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20016-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１８２型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１３０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification high |
English PDF |
| SJ/T 10209-1991 |
Detail specification for electronic components. Fixed bottle high-power ceramic dielectric capacitors for Type CCG11 Assesment level E(Applicable for certification) 电子器件详细规范 ｃｃｇ１１型瓶形高功率瓷介固定电容器 评定水平ｅ（可供认证用） |
China Electronics
Standards Detail specification high |
English PDF |
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