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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ/T 10495-2016 |
(Frequencies below 3MHz PCB connectors - Part 11: coaxial connector (free connectors and fixed connectors size) Detail Specification) 频率低于3mhz的印制板用连接器 第11部分：同轴连接器 （自由连接器和固定连接器尺寸）详细规范 |
China Electronics
Standards Detail specification low |
 English PDF |
| SJ/T 1839-2016 |
(Semiconductor discrete device 3DK108 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk108型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 1838-2016 |
(Semiconductor discrete device 3DK29 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk29型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 1834-2016 |
(Semiconductor discrete device 3DK104 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk104型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 1833-2016 |
(Semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk103型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 1832-2016 |
(Semiconductor discrete device 3DK102 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk102型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 1831-2016 |
(Semiconductor discrete device 3DK28 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk28型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 1830-2016 |
(Semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk101型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 1826-2016 |
(Semiconductor discrete device 3DK100 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk100型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 1480-2016 |
(Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg130型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 1477-2016 |
(Discrete semiconductor devices 3CG120 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg120型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 1472-2016 |
(Discrete semiconductor devices 3CG110 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg110型硅pnp高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 11113-2013 |
(Electronic Component Detail specification - Fixed low power non- wirewound resistors RJ13 Metal Film Fixed Resistors - Assessment level E) 电子元器件详细规范 低功率非线绕固定电阻器RJ13型金属膜固定电阻器 评定水平E |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 10775-2013 |
(Electronic Component Detail specification - Fixed low power non- wirewound resistors RJ14 Metal Film Fixed Resistors - Assessment level E) 电子元器件详细规范 低功率非线绕固定电阻器RJ14型金属膜固定电阻器 评定水平E |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 11400-2009 |
Semiconductor optoelectronic devices. Blank detail specification for lower-power light-emitting diodes 半导体光电子器件 小功率半导体发光二极管空白详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50597/61-2005 |
Semiconductor integrated circuits detail specification for types JW1083/JW1084/JW1085/JW1086 three terminal adjustable low dropout positive voltage regulators 半导体集成电路jw1083/jw1084/jw1085/jw1086型三端可调正输出低压差电压调整器详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 11307-2005 |
Connectors with assessed quality, for use in d.c., low-frequency analogue and in digital high-speed data applications. Part 4: Printed board connectors. Section 001:Blank detail specification 有质量评定的直流和低频模拟及数字式高速数据处理设备用连接器 第4部分:印制板连接器 第001篇:空白详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20527.6-2003 |
Microwave assembly Detail specification for model WFB2002 low noise amplifier 微波组件.WFB2002型低噪声放大器详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/160-2002 |
Semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power transistor 半导体分立器件 3dg122型硅超高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/159-2002 |
Semiconductor discrete devices. Detail specification for type 3DG142 silicon UHF low-noise transistor 半导体分立器件 3dg142型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/158-2002 |
Semiconductor discrete devices. Detail specification for type 3DG44 silicon UHF low-noise transistor 半导体分立器件 3dg44型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/154-2002 |
Semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise transistor 半导体分立器件 3dg251型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/151-2002 |
Semiconductor discrete device. Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 半导体分立器件 2dw14-18型低噪声硅电压基准二极管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 52147/1-2002 |
Low speed synchronous motors, rare-earth magnet, series JTDY4, detail specification for jtdy4系列稀土永磁低速同步电动机详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 52146/2-2002 |
Detail specification for low power dissipation numerical display for type GS1113K gs1113k型低功耗数码显示器详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 51428/8-2002 |
Optical fiber cable, shallow submarine, with repeater Detail specification for 可带中继的浅海光缆详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 51428/7-2000 |
Optical fiber cable, shallow water, light, military detail specification for 军用轻型浅海光缆详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 10872-2000 |
Detail specification for electronic components Fixed low-power non-wirewound resistors Type RJ15 metal film fixed resistors Assessment level E 电子元器件详细规范低功率非线绕固定电阻器rj15型金属膜固定电阻器评定水平e |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 10774-2000 |
Detail specification for electronic components Fixed low-power non-wirewound resistors Type RT 14 carbon film fixed resistors Assessment level E 电子元器件详细规范 低功率非线绕固定电阻器 ｒｔ１４型碳膜固定电阻器 评定水平ｅ |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50601/1-1998 |
Detail specification for low temperature thermistors for type MF5602 and MF5604 mf5602型、mf5604型低温热敏电阻器详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/138-1998 |
Semiconductor optoelectronic devices. Detail specification for yellow light -- Emitting diode for type GF318 半导体光电子器件gf318型黄色发光二极管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20725-1998 |
Detail specification for module at low temperature for temperature compensation thermistors for type MF18 mf18型低温温度补偿热敏电阻组件详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 51659/1-1998 |
Joint box, optical fiber cable, slotted, shallow submarine, detail specification for 骨架式浅海光缆接头盒详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 52438/3-1997 |
Hybrid integrated circuit detail specification for type B - LB18 low pass active filter 混合集成电路b—lb18低通有源滤波器详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 51428/4-1997 |
Caslbe, SU type optical fiber, slotted, heavy, shallow submarine, detail specification for 骨架式重型浅海su型光纤光缆详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50597/43-1997 |
Semiconductor integrated circuits Detail specification for type JF36 low noise wide-band amplifier 半导体集成电路jf36型低噪声宽带放大器详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/134-1997 |
Semiconductor discrete devices. Detail specification for type 3DD167 low -- Frequency and high -- Power transistor 半导体分立器件3dd167型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/132-1997 |
Semiconductor discrete devices. Detail specification for type 3DD260 low -- Frequency and high -- Power transistor 半导体分立器件3dd260型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/131-1997 |
Semiconductor discrete devices. Detail specification for type 3DD157 low -- Frequency and high -- Power transistor 半导体分立器件3dd157型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/130-1997 |
Semiconductor discrete devices. Detail specification for type 3DD159 low -- Frequency and high -- Power transistor 半导体分立器件3dd159型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/129-1997 |
Semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high -- Power transistor 半导体分立器件3dd155型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 52453/1-1996 |
Type XGS80/120 toroidal rate-earth permanent magnets of low temperature coefficient magnets of low temperature coefficient, detail specification ｘｇｓ８０／１２０环形低温度系数稀土永磁体详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/106-1996 |
Semiconductor discrete device. Detail specification for type CS203 GaAs microwave low noise field effect transistor 半导体分立器件 ｃｓ２０３型砷化镓微波低噪声场效应晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 10728-1996 |
Blank detail specification of ceramic vacuum switch tubes for low-voltage circuit breakers 低压断路器用陶瓷真空形状管空白详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 10727-1996 |
Blank detail specification of glass vacuum switch tubes for low-voltage circuit breakers 低压断路器用玻璃真空形状管空白详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 ３ｄｇ２１６型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50597/32-1995 |
Semiconductor integrated circuits. Detail specification for Type JW4805, JW4810 and JW4812 three terminal low drop fixed output positive voltage regulators 半导体集成电路 ｊｗ４８０５、ｊｗ４８１０、ｊｗ４８１２型三端低压差固定正输出电压调整器详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/92-1995 |
Semiconductor discrete device. Detail specification for type 3CD100 low-frequency and high-power transistor 半导体分立器件 ３ｃｄ１００型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/91-1995 |
Semiconductor discrete device. Detail specification for type 3CD030 low-fyequency and high-power transistor 半导体分立器件 ３ｃｄ０３０型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/90-1995 |
Semiconductor discrete device. Detail specification for type 3DK106 NPN silicon low -- Power switching transistor 半导体分立器件 ３ｄｋ１０６型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/82-1995 |
Semiconductor discrete device. Detail specification for type 3DK100 NPN silicon low-power switching transistor 半导体分立器件 ３ｄｋ１００型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/76-1995 |
Semiconductor discrete devices. Detail specification for type 3DG218 Silicon microwave low-noise tansistor 半导体分立器件 ３ｄｇ２１８型硅微波低噪声晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor 半导体分立器件 ３ｄｇ１３５型硅超高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/67-1995 |
Semiconductor discrete device. Detail specification for type 3CD103 High. Voltage low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１０３型高压低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/66-1995 |
Semiconductor discrete device. Detail specification for type 3CD880 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ８８０型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/65-1995 |
Semiconductor discrete device. Detail specification for type 3DD175 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１７５型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/64-1995 |
Semiconductor discrete device. Detail specification for type 3CD010 Low. Frequency and high. Power transistor 半导体分立器件 ３ｃｄ０１０型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/63-1995 |
Semiconductor discrete device. Detail specification for type 3CD020 Low. Frequency and high. Power transistor 半导体分立器件 ３ｃｄ０２０型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 10617-1995 |
Detail specification for electronic components Fixed low-power non-wirwound fixed resistors Type RT13 carbon film fixed resistors Assessment level E 电子器件详细规范 低功率非线绕固定电阻器 ｒｔ１３型碳膜固定电阻器 评定水平ｅ |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/7-1994 |
Detail specification for model JWFX 13 3cm waveguide low power limiter ｊｗｆｘ１３型３ｃｍ波导低功率限幅器详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 50033/5-1994 |
Semiconductor discrete device. Detail specification for semiconductor yellow light emmitting diodes for type GF311 of GP and GT classes 半导体分立器件 ｇｐ和ｇｔ级ｇｆ３１１型半导体黄色发光二极管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20303-1993 |
Detail specification for types JFOP07A, JFOP07, JF714, JFOP27A and JF0P37A low offset operational amplifiers of semiconductor integrated circuits 半导体集成电路 ｊｆｏｐ０７（０７ａ、２７ａ、３７ａ）、ｊｆ７１４型低失调运算放大器详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ/T 10354-1993 |
Detail specification for low-power potentiometers for Type WHE121 Assessment level E 电子器件详细规范 ｗｈｅ１２１型低功率电位器 评定水平ｅ |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20177-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637 半导体分立器件 ３ｃｋ３６３４～３ｃｋ３６３７型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 半导体分立器件 ３ｄｇ３４３９型和３ｄｇ３４４０型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 ３ｄｇ９１８型ｎｐｎ硅超高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20174-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A 半导体分立器件 ３ｄｋ２２２１（２２２１ａ、２２２２、２２２２ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20173-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A 半导体分立器件 ３ｄｋ２２１８（２２１８ａ、２２１９、２２１９ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20068-1992 |
Semiconductor discrete device. Detail specification for lower noise for silicon voltage reference diode for type 2DW14~18 半导体分立器件 ２ｄｗ１４～１８型低噪声硅电压基准二极管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 半导体分立器件 ３ｄｇ２１３型ｎｐｎ硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 半导体分立器件 ３ｄｇ２１０型ｎｐｎ硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 ３ｄｇ１２０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 ３ｄｇ１１１型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20058-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK105 半导体分立器件 ３ｄｋ１０５型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20057-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK104 半导体分立器件 ３ｄｋ１０４型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20056-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK103 半导体分立器件 ３ｄｋ１０３型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20055-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK102 半导体分立器件 ３ｄｋ１０２型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20054-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK101 半导体分立器件 ３ｄｋ１０１型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20016-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１８２型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１３０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
| SJ 20014-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power transistor for types 3CG110 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｃｇ１１０型ｐｎｐ硅小功率晶体管详细规范 |
China Electronics
Standards Detail specification low |
English PDF |
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