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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ/T 1839-2016 |
(Semiconductor discrete device 3DK108 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk108型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
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| SJ/T 1838-2016 |
(Semiconductor discrete device 3DK29 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk29型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 1834-2016 |
(Semiconductor discrete device 3DK104 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk104型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 1833-2016 |
(Semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk103型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 1832-2016 |
(Semiconductor discrete device 3DK102 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk102型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 1831-2016 |
(Semiconductor discrete device 3DK28 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk28型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 1830-2016 |
(Semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk101型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 1826-2016 |
(Semiconductor discrete device 3DK100 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk100型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 1486-2016 |
(Discrete semiconductor devices 3CG180 silicon PNP frequency high power transistor backpressure small detail specification) 半导体分立器件 3cg180型硅ｐｎｐ高频高反压小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 1480-2016 |
(Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg130型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 1477-2016 |
(Discrete semiconductor devices 3CG120 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg120型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 1472-2016 |
(Discrete semiconductor devices 3CG110 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg110型硅pnp高频小功率晶体管详细规范 |
China Electronics
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English PDF |
| SJ/T 11113-2013 |
(Electronic Component Detail specification - Fixed low power non- wirewound resistors RJ13 Metal Film Fixed Resistors - Assessment level E) 电子元器件详细规范 低功率非线绕固定电阻器RJ13型金属膜固定电阻器 评定水平E |
China Electronics
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English PDF |
| SJ/T 10775-2013 |
(Electronic Component Detail specification - Fixed low power non- wirewound resistors RJ14 Metal Film Fixed Resistors - Assessment level E) 电子元器件详细规范 低功率非线绕固定电阻器RJ14型金属膜固定电阻器 评定水平E |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 11400-2009 |
Semiconductor optoelectronic devices. Blank detail specification for lower-power light-emitting diodes 半导体光电子器件 小功率半导体发光二极管空白详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 11393-2009 |
Semiconductor optoelectronic devices. Blank detail specification for power light-emitting diodes 半导体光电子器件 功率发光二极管空白详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/176-2007 |
Semiconductro discrete devices. Detail specification for type 3DA523 silicon microwave pulse power transistor 半导体分立器件 3da523型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/175-2007 |
Semiconductro discrete devices. Detail specification for type 3DA522 silicon microwave pulse power transistor 半导体分立器件 3da522型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/174-2007 |
Semiconductro discrete devices. Detail specification for type 3DA521 silicon microwave pulse power transistor 半导体分立器件 3da521型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/173-2007 |
Semiconductro discrete devices. Detail specification for type 3DA520 silicon microwave pulse power transistor 半导体分立器件 3da520型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/172-2007 |
Semiconductro discrete devices. Detail specification for type 3DA519 silicon microwave pulse power transistor 半导体分立器件 3da519型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/171-2007 |
Semiconductro discrete devices. Detail specification for type 3DA518 silicon microwave pulse power transistor 半导体分立器件 3da518型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/170-2007 |
Semiconductro discrete devices. Detail specification for type 3DA516 silicon microwave pulse power transistor 半导体分立器件 3da516型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 52438/14-2004 |
Hybrid integrated circuits detail specification for type HPA501J power amplifiers 混合集成电路hpa501j型功率放大器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 51518/1-2004 |
Filters, power, type LC410-9005-E-E-1E-B-3, detail specification for lc410-9005-e-e-1e-b-3、lc410-9007-h-e-1e-b-3型电源滤波器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 51065/9-2004 |
Isolators, S-band, middle-power, coaxial, type GTP011A, GTP012A detail specification for gtp011a、gtp012a型s波段中功率同轴隔离器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/169-2004 |
Semiconductor discrete devices. Detail specification for type 3DA510 silicon microwave pulse power transistor 半导体分立器件3da510型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/168-2004 |
Semiconductor discrete devices. Detail specification for type 3DA509 silicon microwave pulse power transistor 半导体分立器件3da509型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/167-2004 |
Semiconductor discrete devices. Detail specification for type 3DA508 silicon microwave pulse power transistor 半导体分立器件3da508型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/166-2004 |
Semiconductor discrete devices. Detail specification for type 3DA507 silicon microwave pulse power transistor 半导体分立器件3da507型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50676/6-2003 |
Circulators, high power, waveguide junction, type HBG008B, HBG008C, detail specification for hbg008b、hbg008c型高功率结型波导环行器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/163-2003 |
Semiconductor discrete device. Detail specification of type 3DK457 for power switching transistors 半导体分立器件3dk457型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 51042/3-2002 |
Detail specification for model JQX-40M, micro-miniature, high power, hermetically sealed, d.c., electromagnetic relays jqx-40m型小型大功率密封直流电磁继电器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 51042/2-2002 |
Detail specification for model JMW-3M, micro-miniature, Intermediate power, hermetically sealed, magnetic-latching relays jmw-3m型微型中功率密封磁保持继电器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/160-2002 |
Semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power transistor 半导体分立器件 3dg122型硅超高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/157-2002 |
Semiconductor discrete devices. Detail specification for type 3DA506 silicon microwave pulse power transistor 半导体分立器件 3da506型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/156-2002 |
Semiconductor discrete devices. Detail specification for type 3DA505 silicon microwave pulse power transistor 半导体分立器件 3da505型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 52146/2-2002 |
Detail specification for low power dissipation numerical display for type GS1113K gs1113k型低功耗数码显示器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 52438/13-2002 |
Hybrid integrated circuits detail specification for type HPA2753 PWM power amplifiers |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 52438/12-2002 |
Hybrid integrated circuits detail specification for type HPA2748 PWM power amplifiers |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 54154/1-2001 |
Resistors, fixed, wire - wound, power, chassis mounted, style RXG12, detail specification for rxg12型散热器安装功率线绕固定电阻器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 52438/10-2001 |
Hybrid integrated circuits detail specification for type HMSF - 600 power filters 混合集成电路 hmsf-600型电源滤波器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/148-2000 |
Semiconductor discrete devices. Detail specification for type 3DK35B~F power switching transistors 半导体分立器件3dk35b—f型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/146-2000 |
Semiconductor discrete devices. Detail specification for type 3DA601 C band silicon bipolar power transistor 半导体分立器件3da601型c波段硅双极型功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/145-2000 |
Semiconductor discrete devices. Detail specification for type 3DA503 silicon microwave pulse power transistor 半导体分立器件3da503型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 11227-2000 |
Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 电子元器件详细规范 3da98型npn硅高频大功率晶体管 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 11226-2000 |
Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor 电子元器件详细规范 3da505型l波段硅脉冲功率晶体管 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 11225-2000 |
Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor 电子元器件详细规范 3da504型s波段硅脉冲功率晶体管 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 10872-2000 |
Detail specification for electronic components Fixed low-power non-wirewound resistors Type RJ15 metal film fixed resistors Assessment level E 电子元器件详细规范低功率非线绕固定电阻器rj15型金属膜固定电阻器评定水平e |
China Electronics
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English PDF |
| SJ/T 10774-2000 |
Detail specification for electronic components Fixed low-power non-wirewound resistors Type RT 14 carbon film fixed resistors Assessment level E 电子元器件详细规范 低功率非线绕固定电阻器 ｒｔ１４型碳膜固定电阻器 评定水平ｅ |
China Electronics
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English PDF |
| SJ 20023.8-1999 |
Detail specification for power travelling wave tubes of type B-283 B-283型功率行波管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/140-1999 |
Semiconductor discrete devices. Detail specification for type 3DA502 silicon microwave pulse power transistor 半导体光电子器件3da502型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 52828/1-1998 |
Resistors, fixed, wire-wound, power, style RXG9, detail specification for rxg9功率型线绕固定电阻器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50676/5-1998 |
Circulator, RF, high power, waveguide junction, 3cm, type HBG008A, detail specification for hbg008a型三厘米高功率结型波导射频环行器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/134-1997 |
Semiconductor discrete devices. Detail specification for type 3DD167 low -- Frequency and high -- Power transistor 半导体分立器件3dd167型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/132-1997 |
Semiconductor discrete devices. Detail specification for type 3DD260 low -- Frequency and high -- Power transistor 半导体分立器件3dd260型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/131-1997 |
Semiconductor discrete devices. Detail specification for type 3DD157 low -- Frequency and high -- Power transistor 半导体分立器件3dd157型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/130-1997 |
Semiconductor discrete devices. Detail specification for type 3DD159 low -- Frequency and high -- Power transistor 半导体分立器件3dd159型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/129-1997 |
Semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high -- Power transistor 半导体分立器件3dd155型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/125-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN11~15 半导体分立器件pin11～15型硅pin二极管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/124-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN101~105 半导体分立器件pin101～105型硅pin大功率二极管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/123-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN62317 半导体分立器件pin62317型硅pin大功率二极管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/120-1997 |
Semiconductor discrete devices. Detail specification for type CS205 GaAs microwave power field effect transistor 半导体分立器件cs205型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/119-1997 |
Semiconductor discrete devices. Detail specification for type CS204 GaAs microwave power field effect transistor 半导体分立器件cs204型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/105-1996 |
Semiconductor discrete device Detail specification for type 3DK404 power switching transistor 半导体分立器件 ３ｄｋ４０４型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/104-1996 |
Semiconductor discrete device. Detail specification for type 3DK002 power switching transistor 半导体分立器件 ３ｄｋ００２型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/103-1996 |
Semiconductor discrete device. Detail specification for type 3DA89 high-frequency power transistor 半导体分立器件 ３ｄａ８９型高频功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20459/1-1996 |
Detail specification for power klystron of type KF-115 series ｋｆ－１１５型系列功率速调管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 ３ｄｇ２１６型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/92-1995 |
Semiconductor discrete device. Detail specification for type 3CD100 low-frequency and high-power transistor 半导体分立器件 ３ｃｄ１００型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/91-1995 |
Semiconductor discrete device. Detail specification for type 3CD030 low-fyequency and high-power transistor 半导体分立器件 ３ｃｄ０３０型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/90-1995 |
Semiconductor discrete device. Detail specification for type 3DK106 NPN silicon low -- Power switching transistor 半导体分立器件 ３ｄｋ１０６型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/82-1995 |
Semiconductor discrete device. Detail specification for type 3DK100 NPN silicon low-power switching transistor 半导体分立器件 ３ｄｋ１００型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/79-1995 |
Semiconductor discrete devices. Detail specification for type CS0536 GaAs microwave power FET 半导体分立器件 ｃｓ０５３６型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/77-1995 |
Semiconductor discrete devices. Detail specification for type 3DA331 Silicon microwave power tansistor 半导体分立器件 ３ｄａ３３１型硅微波功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor 半导体分立器件 ３ｄｇ１３５型硅超高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/74-1995 |
Semiconductor discrete device. Detail specification for type 3DA325 silicon microwave power tansistor 半导体分立器件 ３ｄａ３２５型硅微波功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/68-1995 |
Semiconductor discrete device. Detail specification for type BT51 NPN silicon small power difference matchen -- Pair transistor 半导体分立器件 ｂｔ５１型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/67-1995 |
Semiconductor discrete device. Detail specification for type 3CD103 High. Voltage low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１０３型高压低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/66-1995 |
Semiconductor discrete device. Detail specification for type 3CD880 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ８８０型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/65-1995 |
Semiconductor discrete device. Detail specification for type 3DD175 Low. Frequency and high. Power transistor 半导体分立器件 ３ｄｄ１７５型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/64-1995 |
Semiconductor discrete device. Detail specification for type 3CD010 Low. Frequency and high. Power transistor 半导体分立器件 ３ｃｄ０１０型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/63-1995 |
Semiconductor discrete device. Detail specification for type 3CD020 Low. Frequency and high. Power transistor 半导体分立器件 ３ｃｄ０２０型低频大功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/62-1995 |
Semiconductor discrete device Detail specification for type 3DK406 high. Voltage and power switching transistor 半导体分立器件 ３ｄｋ４０６型高压功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/61-1995 |
Semiconductor discrete device. Detail specification for type 3DK6547 high. Voltage and power switching transistor 半导体分立器件 ３ｄｋ６５４７型高压功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/60-1995 |
Semiconductor discrete device. Detail specification for type 3DK40 power switching transistor 半导体分立器件 ３ｄｋ４０型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/59-1995 |
Semiconductor discrete device. Detail specification for type 3DK39 power switching transistor 半导体分立器件 ３ｄｋ３９型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 10619-1995 |
Detail specification for electronic components Fixed power resistors Type RYG2 metal oxide film resistors Assessment level E 电子器件详细规范 功率型固定电阻器 ｒｙｇ２型金属氧化膜电阻器 评定水平ｅ |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 10618-1995 |
Detail specification for electronic components Fixed power resistors Type RYG1 metal oxide film resistors Assessment level E 电子器件详细规范 功率型固定电阻器 ｒｙｇ１型金属氧化膜电阻器 评定水平ｅ |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 10617-1995 |
Detail specification for electronic components Fixed low-power non-wirwound fixed resistors Type RT13 carbon film fixed resistors Assessment level E 电子器件详细规范 低功率非线绕固定电阻器 ｒｔ１３型碳膜固定电阻器 评定水平ｅ |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/9-1994 |
Discrete semiconductor devices Detailed specifications for 3DK206 power switching transistors 半导体分立器件 ３ｄｋ２０６型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/8-1994 |
Discrete semiconductor devices Detailed specifications for 3DK12 power switching transistors 半导体分立器件 ３ｄｋ２０５型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/7-1994 |
Detail specification for model JWFX 13 3cm waveguide low power limiter ｊｗｆｘ１３型３ｃｍ波导低功率限幅器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/37-1994 |
Semiconductor discrete device. Detail specification for type 3DD164 power transistor 半导体分立器件 ３ｄｄ１６４型功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/36-1994 |
Semiconductor discrete device. Detail specification for type 3CD050 power transistor 半导体分立器件 ３ｃｄ０５０型功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/34-1994 |
Semiconductor discrete device. Detail specification for type FH129 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１２９型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/33-1994 |
Semiconductor discrete device. Detail specification for type FH121 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１２１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/32-1994 |
Semiconductor discrete device. Detail specification for type 3DK312 power switching transistor 半导体分立器件 ３ｄｋ３１２型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/31-1994 |
Semiconductor discrete device. Detail specification for type FH101 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１０１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/30-1994 |
Semiconductor discrete device. Detail specification for type 3DD155 power transistor 半导体分立器件 ３ｄｄ１５５型功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/24-1994 |
Discrete semiconductor devices Detailed specifications for 3DK310 power switching transistors 半导体分立器件 ３ｄｋ３１０型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/23-1994 |
Discrete semiconductor devices Detailed specifications for 3DK309 power switching transistors 半导体分立器件 ３ｄｋ３０９型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/2-1994 |
Semiconductor discret device. Detail specification for type 3CK2904, 3CK2904A, 3CK2905 and 3CK2905A PNP silicon cow-power switching transistor 半导体分立器件 ３ｃｋ２９０４（２９０４ａ、２９０５和２９０５ａ）型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/17-1994 |
Discrete semiconductor devices Detailed specifications for 3DK308 power switching transistors 半导体分立器件 ３ｄｋ３０８型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/16-1994 |
Discrete semiconductor devices Detailed specifications for 3DK307 power switching transistors 半导体分立器件 ３ｄｋ３０７型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/15-1994 |
Discrete semiconductor devices Detailed specifications for 3DK306 power switching transistors 半导体分立器件 ３ｄｋ３０６型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/14-1994 |
Discrete semiconductor devices Detailed specifications for 3DK305 power switching transistors 半导体分立器件 ３ｄｋ３０５型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/13-1994 |
Discrete semiconductor devices Detailed specifications for 3DK210 power switching transistors 半导体分立器件 ３ｄｋ２１０型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/12-1994 |
Discrete semiconductor devices Detailed specifications for 3DK209 power switching transistors 半导体分立器件 ３ｄｋ２０９型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/1-1994 |
Semiconductor discrete device. Detail specification for type 3DA150 high frequency and power transistor 半导体分立器件 ３ｄａ１５０型高频功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/11-1994 |
Discrete semiconductor devices Detailed specifications for 3DK208 power switching transistors 半导体分立器件 ３ｄｋ２０８型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033/10-1994 |
Discrete semiconductor devices Detailed specifications for 3DK207 power switching transistors 半导体分立器件 ３ｄｋ２０７型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033.54-1994 |
Semiconductor discrete device. Detail specification for type CS0532 GaAs microwave Power field effect transistor 半导体分立器件 ｃｓ０５３２型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033.53-1994 |
Semiconductor discrete device. Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor 半导体分立器件 ｃｓ０５３０、ｃｓ０５３１型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 50033.52-1994 |
Semiconductor discrete device. Detail specification for type CS0529 GaAs microwave Power field effect transistor 半导体分立器件 ｃｓ０５２９型砷化镓微波功率场效应晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20339-1993 |
Detail specification for high power electrical dummy losd for 3cm aluminium waveguide ３ｃｍ铝波导高功率假负载详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20310-1993 |
Detail specification for types 3DD101 power transistor 半导体分立器件 ３ｄｄ１０１型功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20309-1993 |
Detail specification for types 3DK10 power Darlington transistor 半导体分立器件 ３ｄｋ１０型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20308-1993 |
Detail specification for type FH1025 PN silicon power Darlington transistor 半导体分立器件 ｆｈ１０２５型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20307-1993 |
Detail specification for types FH646 PN silicon power Darlington transistor 半导体分立器件 ｆｈ６４６型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20306-1993 |
Detail specification for types FH181A NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１８１ａ型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 10354-1993 |
Detail specification for low-power potentiometers for Type WHE121 Assessment level E 电子器件详细规范 ｗｈｅ１２１型低功率电位器 评定水平ｅ |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20183-1992 |
Semiconductor discrete device Detail specification for type 3DD6 power transistor 半导体分立器件 ３ｄｄ６型功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20178-1992 |
Semiconductor discrete device Detail specification for type 3CK38 power swithing transistor 半导体分立器件 ３ｃｋ３８型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20177-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637 半导体分立器件 ３ｃｋ３６３４～３ｃｋ３６３７型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 半导体分立器件 ３ｄｇ３４３９型和３ｄｇ３４４０型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 ３ｄｇ９１８型ｎｐｎ硅超高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20174-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A 半导体分立器件 ３ｄｋ２２２１（２２２１ａ、２２２２、２２２２ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20173-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A 半导体分立器件 ３ｄｋ２２１８（２２１８ａ、２２１９、２２１９ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20172-1992 |
Semiconductor discrete device Detail specification for type 3DK38 power swithing transistor 半导体分立器件 ３ｄｋ３８型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20171-1992 |
Semiconductor discrete device Detail specification for type 3DK51 power switching transistor 半导体分立器件 ３ｄｋ５１型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20170-1992 |
Semiconductor discrete device Detail specification for type 3DK37 power switching transistor 半导体分立器件 ３ｄｋ３７型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20169-1992 |
Semiconductor discrete device Detail specification for type 3DK36 power switching transistor 半导体分立器件 ３ｄｋ３６型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20168-1992 |
Semiconductor discrete device Detail specification for type 3DK12 power switching transistor 半导体分立器件 ３ｄｋ１２型功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20096-1992 |
Detail specification for type LG2 filter inductors of horizontal-power supplies ｌｇ２型行电源滤波电感器详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 ３ｄｇ１２０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 ３ｄｇ１１１型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20058-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK105 半导体分立器件 ３ｄｋ１０５型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20057-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK104 半导体分立器件 ３ｄｋ１０４型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20056-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK103 半导体分立器件 ３ｄｋ１０３型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20055-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK102 半导体分立器件 ３ｄｋ１０２型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20054-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK101 半导体分立器件 ３ｄｋ１０１型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20016-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１８２型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１３０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ 20014-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power transistor for types 3CG110 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｃｇ１１０型ｐｎｐ硅小功率晶体管详细规范 |
China Electronics
Standards Detail specification power |
English PDF |
| SJ/T 10209-1991 |
Detail specification for electronic components. Fixed bottle high-power ceramic dielectric capacitors for Type CCG11 Assesment level E(Applicable for certification) 电子器件详细规范 ｃｃｇ１１型瓶形高功率瓷介固定电容器 评定水平ｅ（可供认证用） |
China Electronics
Standards Detail specification power |
English PDF |
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