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Keyword:
| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| JB/T 14047-2021 |
Specification for ZG13Cr9Mo2Co1NiVNbNB heat-resistant steel castings for ultra-supercritical steam turbines {译} 超超临界汽轮机用ZG13Cr9Mo2Co1NiVNbNB耐热钢铸件 技术条件 |
China Machinery Industry
Standards G1 |
 English PDF |
| SJ/T 1486-2016 |
(Discrete semiconductor devices 3CG180 silicon PNP frequency high power transistor backpressure small detail specification) 半导体分立器件 3cg180型硅ｐｎｐ高频高反压小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ/T 1480-2016 |
(Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg130型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ/T 1477-2016 |
(Discrete semiconductor devices 3CG120 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg120型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ/T 1472-2016 |
(Discrete semiconductor devices 3CG110 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg110型硅pnp高频小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SN/T 3868-2014 |
(Vegetable export of aflatoxin B1; B2; G1; G2- detection - immunoaffinity column HPLC purification) 出口植物油中黄曲霉毒素B1、B2、G1、G2的检测-免疫亲和柱净化高效液相色谱法 |
China Import Export Inspection
Standards G1 |
English PDF |
| SN/T 1664-2005 |
Determination of aflatoxin M1, B1, B2, G1, G2 content in milk and milk powder 牛奶和奶粉中黄曲霉毒素m1、b1、b2、g1、g2含量的测定 |
China Import Export Inspection
Standards G1 |
English PDF |
| SJ 50033/160-2002 |
Semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power transistor 半导体分立器件 3dg122型硅超高频小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ 50033/159-2002 |
Semiconductor discrete devices. Detail specification for type 3DG142 silicon UHF low-noise transistor 半导体分立器件 3dg142型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ 54154/1-2001 |
Resistors, fixed, wire - wound, power, chassis mounted, style RXG12, detail specification for rxg12型散热器安装功率线绕固定电阻器详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor 半导体分立器件 ３ｄｇ１３５型硅超高频小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ/T 10618-1995 |
Detail specification for electronic components Fixed power resistors Type RYG1 metal oxide film resistors Assessment level E 电子器件详细规范 功率型固定电阻器 ｒｙｇ１型金属氧化膜电阻器 评定水平ｅ |
China Electronics
Standards G1 |
English PDF |
| SJ 20346-1993 |
Detail specification for type LG1-B-1000 fixed inductors ｌｇ１－ｂ－１０００型固定电感器详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 ３ｄｇ１２０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 ３ｄｇ１１１型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ 20016-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１８２型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１３０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ 20014-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power transistor for types 3CG110 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｃｇ１１０型ｐｎｐ硅小功率晶体管详细规范 |
China Electronics
Standards G1 |
English PDF |
| SJ/T 10209-1991 |
Detail specification for electronic components. Fixed bottle high-power ceramic dielectric capacitors for Type CCG11 Assesment level E(Applicable for certification) 电子器件详细规范 ｃｃｇ１１型瓶形高功率瓷介固定电容器 评定水平ｅ（可供认证用） |
China Electronics
Standards G1 |
English PDF |
| TB/T 2023-1988 |
(BG1-72/25-track transformer) |
China Railway & Train
Standards G1 |
English PDF |
| TB 1973-1987 |
(Ball check valve type and basic dimensions DG15 Dg20 Dg25) |
China Railway & Train
Standards G1 |
English PDF |
| TB 1972-1987 |
(Ball check valve types and basic dimensions DG10) |
China Railway & Train
Standards G1 |
English PDF |
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