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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| JB/T 11204-2020 |
Specifications for silicone oil fan clutches for internal combustion engines {译} 内燃机用硅油风扇离合器 技术条件 |
China Machinery Industry
Standards Specification silicon |
 English PDF |
| JB/T 6374-2020 |
Silicon carbide seal rings for mechanical seals Specifications {译} 机械密封用碳化硅密封环 技术条件 |
China Machinery Industry
Standards Specification silicon |
English PDF |
| JB/T 14091-2020 |
Technical specification for acceptance of complete set of equipment for waste heat recovery and utilization of ferrosilicon ore furnace {译} 硅铁矿热炉余热回收利用成套装置验收技术规范 |
China Machinery Industry
Standards Specification silicon |
English PDF |
| SJ/T 1839-2016 |
(Semiconductor discrete device 3DK108 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk108型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 1838-2016 |
(Semiconductor discrete device 3DK29 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk29型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 1834-2016 |
(Semiconductor discrete device 3DK104 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk104型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 1833-2016 |
(Semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk103型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 1832-2016 |
(Semiconductor discrete device 3DK102 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk102型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 1831-2016 |
(Semiconductor discrete device 3DK28 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk28型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 1830-2016 |
(Semiconductor discrete device 3DK101 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk101型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 1826-2016 |
(Semiconductor discrete device 3DK100 silicon NPN low power switching transistor detailed specification) 半导体分立器件 3dk100型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 1486-2016 |
(Discrete semiconductor devices 3CG180 silicon PNP frequency high power transistor backpressure small detail specification) 半导体分立器件 3cg180型硅ｐｎｐ高频高反压小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 1480-2016 |
(Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg130型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 1477-2016 |
(Discrete semiconductor devices 3CG120 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg120型硅ｐｎｐ高频小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 1472-2016 |
(Discrete semiconductor devices 3CG110 high frequency low power silicon PNP transistor detailed specification) 半导体分立器件 3cg110型硅pnp高频小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| DL/T 5727-2016 |
(Insulators room temperature curing silicone rubber anti-fouling paints flash site construction specifications) 绝缘子用常温固化硅橡胶防污闪涂料现场施工技术规范 |
China Electricity & Power
Standards Specification silicon |
English PDF |
| SJ/T 2216-2015 |
Technical specification for photodiode of silicon 硅光电二极管技术规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 11502-2015 |
Specification for polished monocrystalline silicon carbide wafers 碳化硅单晶抛光片规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 2217-2014 |
(Silicon phototransistor technical specifications) 硅光电晶体管技术规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 11450-2013 |
Specification for energy consumption norm of silicon single crystal grower 单晶炉能源消耗规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/176-2007 |
Semiconductro discrete devices. Detail specification for type 3DA523 silicon microwave pulse power transistor 半导体分立器件 3da523型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/175-2007 |
Semiconductro discrete devices. Detail specification for type 3DA522 silicon microwave pulse power transistor 半导体分立器件 3da522型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/174-2007 |
Semiconductro discrete devices. Detail specification for type 3DA521 silicon microwave pulse power transistor 半导体分立器件 3da521型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/173-2007 |
Semiconductro discrete devices. Detail specification for type 3DA520 silicon microwave pulse power transistor 半导体分立器件 3da520型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/172-2007 |
Semiconductro discrete devices. Detail specification for type 3DA519 silicon microwave pulse power transistor 半导体分立器件 3da519型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/171-2007 |
Semiconductro discrete devices. Detail specification for type 3DA518 silicon microwave pulse power transistor 半导体分立器件 3da518型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/170-2007 |
Semiconductro discrete devices. Detail specification for type 3DA516 silicon microwave pulse power transistor 半导体分立器件 3da516型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| QC/T 706-2004 |
Technical specification of silicon avalanche rectification for motor vehicles 机动车用硅雪崩整流二极管技术条件 |
China Automobile & Vehicle industry
Standards Specification silicon |
English PDF |
| SJ 20911-2004 |
Potting technics specification for 107 silicone rubber 107硅橡胶灌封工艺规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/169-2004 |
Semiconductor discrete devices. Detail specification for type 3DA510 silicon microwave pulse power transistor 半导体分立器件3da510型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/168-2004 |
Semiconductor discrete devices. Detail specification for type 3DA509 silicon microwave pulse power transistor 半导体分立器件3da509型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/167-2004 |
Semiconductor discrete devices. Detail specification for type 3DA508 silicon microwave pulse power transistor 半导体分立器件3da508型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/166-2004 |
Semiconductor discrete devices. Detail specification for type 3DA507 silicon microwave pulse power transistor 半导体分立器件3da507型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/162-2003 |
Semiconductor discrete device. Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes 半导体分立器件2cw1022型硅双向电压调整二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/161-2002 |
Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2CW210~251 半导体分立器件 2cw210-251型硅电压调整二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/160-2002 |
Semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power transistor 半导体分立器件 3dg122型硅超高频小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/159-2002 |
Semiconductor discrete devices. Detail specification for type 3DG142 silicon UHF low-noise transistor 半导体分立器件 3dg142型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/158-2002 |
Semiconductor discrete devices. Detail specification for type 3DG44 silicon UHF low-noise transistor 半导体分立器件 3dg44型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/157-2002 |
Semiconductor discrete devices. Detail specification for type 3DA506 silicon microwave pulse power transistor 半导体分立器件 3da506型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/156-2002 |
Semiconductor discrete devices. Detail specification for type 3DA505 silicon microwave pulse power transistor 半导体分立器件 3da505型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/154-2002 |
Semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise transistor 半导体分立器件 3dg251型硅超高频低噪声晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/151-2002 |
Semiconductor discrete device. Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 半导体分立器件 2dw14-18型低噪声硅电压基准二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/150-2002 |
Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2DW230~236 半导体分立器件 2dw230-236型硅电压基准二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| YY 0334-2002 |
General specification for surgical implants made of silicone elastomer 硅橡胶外科植入物通用要求 |
China Medicine & Medical Device
Standards Specification silicon |
English PDF |
| SJ 50033/146-2000 |
Semiconductor discrete devices. Detail specification for type 3DA601 C band silicon bipolar power transistor 半导体分立器件3da601型c波段硅双极型功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/145-2000 |
Semiconductor discrete devices. Detail specification for type 3DA503 silicon microwave pulse power transistor 半导体分立器件3da503型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 11227-2000 |
Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 电子元器件详细规范 3da98型npn硅高频大功率晶体管 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 11226-2000 |
Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor 电子元器件详细规范 3da505型l波段硅脉冲功率晶体管 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 11225-2000 |
Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor 电子元器件详细规范 3da504型s波段硅脉冲功率晶体管 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/144-1999 |
Semiconductor discrete devices. Detail specification for types 2CW50~78 glass passivation package Silicon voltage-regulator diodes 半导体光电子器件2cw50～78型玻璃钝化封装硅电压调整二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/140-1999 |
Semiconductor discrete devices. Detail specification for type 3DA502 silicon microwave pulse power transistor 半导体光电子器件3da502型硅微波脉冲功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20658-1998 |
Specification for radiation hardened monocrystal silicon wafers for military CMOS integrated circuits 军用电站方舱通用规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/135-1997 |
Semiconductor discrete devices. Detail specification for type 2CZ10 silicon switching rectifier diode 半导体分立器件2cz10型硅开关整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/125-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN11~15 半导体分立器件pin11～15型硅pin二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/124-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN101~105 半导体分立器件pin101～105型硅pin大功率二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/123-1997 |
Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN62317 半导体分立器件pin62317型硅pin大功率二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/122-1997 |
Semiconductor discrete devices. Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3684～cs3687型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/121-1997 |
Semiconductor discrete devices. Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect transistors 半导体分立器件cs3458～cs3460型硅n沟道结型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/117-1997 |
Semiconductor discrete devices. Detail specification for type 2CK38 silicon large current switch diode 半导体分立器件2ck38型硅大电流开关二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/116-1997 |
Semiconductor discrete devices. Detail specification for type 2CK29 silicon large current switch diode 半导体分立器件2ck29型硅大电流开关二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/115-1997 |
Semiconductor discrete devices. Detail specification for type 2CK28 silicon large current switch diode 半导体分立器件2ck28型硅大电流开关二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 10954-1996 |
Detail specification for electronic component silicon switching diode for type 2CK120 电子器件详细规范 ２ｃｋ１２０型硅开关二极管（可供认证用） |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/96-1995 |
Semiconductor discrete device. Detail specification for type 3DG216 NPN silicon low-power difference matched. Pair transistor 半导体分立器件 ３ｄｇ２１６型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/95-1995 |
Semiconductor discrete device. Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４４型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/94-1995 |
Semiconductor discrete device. Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４３型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/93-1995 |
Semiconductor discrete device. Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor 半导体分立器件 ３ｄｇ１４２型ｎｐｎ硅高频低噪声小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/90-1995 |
Semiconductor discrete device. Detail specification for type 3DK106 NPN silicon low -- Power switching transistor 半导体分立器件 ３ｄｋ１０６型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/89-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ６７６8and ＣＳ６７70 silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ６７６８和ｃｓ６７７０型硅ｎ沟道增强型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/88-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ６７６０and ＣＳ６７６２ silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ６７６０和ｃｓ６７６２型硅ｎ沟道增强型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/87-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ４０９１~ＣＳ４０９３ silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ４０９１～ｃｓ４０９３型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/86-1995 |
Semiconductor discrete device. Detail specification for type ＣＳ５１１４~ＣＳ５１１６ silicon P-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ５１１４～ｃｓ５１１６型硅ｐ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/85-1995 |
Semiconductor discrete device. Detail specification for type CS141 silicon N-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１４１型硅ｎ沟道ｍｏｓ耗尽型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/84-1995 |
Semiconductor discrete device. Detail specification for type CS140 silicon N-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１４０型硅ｎ沟道ｍｏｓ耗尽型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/83-1995 |
Semiconductor discrete device. Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor 半导体分立器件 ｃｓ１３９型硅ｐ沟道ｍｏｓ增强型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/82-1995 |
Semiconductor discrete device. Detail specification for type 3DK100 NPN silicon low-power switching transistor 半导体分立器件 ３ｄｋ１００型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/77-1995 |
Semiconductor discrete devices. Detail specification for type 3DA331 Silicon microwave power tansistor 半导体分立器件 ３ｄａ３３１型硅微波功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/76-1995 |
Semiconductor discrete devices. Detail specification for type 3DG218 Silicon microwave low-noise tansistor 半导体分立器件 ３ｄｇ２１８型硅微波低噪声晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/75-1995 |
Semiconductor discrete device. Detail specification for type 3DG135 Silicon ultra high frequency low-power tansistor 半导体分立器件 ３ｄｇ１３５型硅超高频小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/74-1995 |
Semiconductor discrete device. Detail specification for type 3DA325 silicon microwave power tansistor 半导体分立器件 ３ｄａ３２５型硅微波功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/73-1995 |
Semiconductor discrete device. Detail specification for type QL74 silicon single phase bridge rectifier 半导体分立器件 ｑｌ７４型硅单相桥式整流器详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/68-1995 |
Semiconductor discrete device. Detail specification for type BT51 NPN silicon small power difference matchen -- Pair transistor 半导体分立器件 ｂｔ５１型ｎｐｎ硅小功率差分对晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20514-1995 |
Specification for silicon epitaxial wafer for microwave power transistor 微波功率晶体管用硅外延片规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/39-1994 |
Semiconductor discrete device. Detail specification for type 2CZ106 silicon switching rectifier diode 半导体分立器件 ２ｃｚ１０６型开关整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/38-1994 |
Semiconductor discrete device. Detail specification for type CS4856~CS4861 silicon N-channel deplition mode field-effect transistor 半导体分立器件 ｃｓ４８５６～ｃｓ４８６１型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/34-1994 |
Semiconductor discrete device. Detail specification for type FH129 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１２９型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/33-1994 |
Semiconductor discrete device. Detail specification for type FH121 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１２１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/31-1994 |
Semiconductor discrete device. Detail specification for type FH101 NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１０１型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/26-1994 |
Semiconductor discrete device. Detail specification for type 2CW1006~2CW1015 silicon voltage -- Regulator diode 半导体分立器件 ２ｃｗ１００６～２ｃｗ１０１５型硅电压调整二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/25-1994 |
Semiconductor discrete device. Detail specification for type 2CW1001~2CW1005 silicon voltage -- Regulator diode 半导体分立器件 ２ｃｗ１００１～２ｃｗ１００５型硅电压调整二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/22-1994 |
Semiconductor discrete device. Detail specification for silicon tuning varactor diode for type 2CC51E 半导体分立器件 ２ｃｃ５１ｅ型硅电调变容二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/2-1994 |
Semiconductor discret device. Detail specification for type 3CK2904, 3CK2904A, 3CK2905 and 3CK2905A PNP silicon cow-power switching transistor 半导体分立器件 ３ｃｋ２９０４（２９０４ａ、２９０５和２９０５ａ）型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/21-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ75 半导体分立器件 ２ｃｚ７５型硅开关整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/20-1994 |
Semiconductor discrete device. Detail specification for silicon rectifier diode for type 2CZ101 半导体分立器件 ２ｃｚ１０１型硅开关整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/19-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ74 半导体分立器件 ２ｃｚ７４型硅开关整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033/18-1994 |
Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ73 半导体分立器件 ２ｃｚ７３型硅开关整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033.56-1994 |
Semiconductor discrete device. Detail specification for type 2CK85 silicon switching diode 半导体分立器件 ２ｃｋ８５型硅开关二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033.55-1994 |
Semiconductor discrete device. Detail specification for type 2CK82 silicon switching diode 半导体分立器件 ２ｃｋ８２型硅开关二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033.50-1994 |
Semiconductor discrete device. Detail specification for type QL73 silicon three phase full wave bridge rectifier 半导体分立器件 ｑｌ７３型硅三相桥式整流器详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033.48-1994 |
Semiconductor discrete device. Detail specification for type 2DV8CP silicon microwave detector diode 半导体分立器件 ２ｄｖ８ｃｐ型硅微波检波二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033.47-1994 |
Semiconductor discrete device. Detail specification for type 2CZ117 silicon rectifier diode 半导体分立器件 ２ｃｚ１１７型硅整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033.46-1994 |
Semiconductor discrete device. Detail specification for type 2CZ59 silicon rectifier diode 半导体分立器件 ２ｃｚ５９型硅整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033.45-1994 |
Semiconductor discrete device. Detail specification for type 2CZ58 silicon rectifier diode 半导体分立器件 ２ｃｚ５８型硅整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033.44-1994 |
Semiconductor discrete device. Detail specification for type 2CZ105 silicon witching rectifier diode 半导体分立器件 ２ｃｚ１０５型硅开关整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 50033.43-1994 |
Semiconductor discrete device. Detail specification for type 2CZ104 silicon switching rectifier diode 半导体分立器件 ２ｃｚ１０４型硅开关整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20308-1993 |
Detail specification for type FH1025 PN silicon power Darlington transistor 半导体分立器件 ｆｈ１０２５型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20307-1993 |
Detail specification for types FH646 PN silicon power Darlington transistor 半导体分立器件 ｆｈ６４６型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20306-1993 |
Detail specification for types FH181A NPN silicon power Darlington transistor 半导体分立器件 ｆｈ１８１ａ型ｎｐｎ硅功率达林顿晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20188-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550 through 2CZ5554 半导体分立器件 ２ｃｗ３０１６～３０５１型电压调整二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20187-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550~5554 半导体分立器件 ２ｃｚ５５５０～５５５４型硅整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20186-1992 |
Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CW2970~3015 半导体分立器件 ２ｃｗ２９７０～３０１５型硅电压调整二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20177-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634~3CK3637 半导体分立器件 ３ｃｋ３６３４～３ｃｋ３６３７型ｐｎｐ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20176-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440 半导体分立器件 ３ｄｇ３４３９型和３ｄｇ３４４０型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20175-1992 |
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918 半导体分立器件 ３ｄｇ９１８型ｎｐｎ硅超高频小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20174-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2221, 3DK2221A, 3DK2222 and 3DK2222A 半导体分立器件 ３ｄｋ２２２１（２２２１ａ、２２２２、２２２２ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20173-1992 |
Semiconductor discrete device Detail specification for NPN silicon low-power swithing transistor of types 3DK2218, 3DK2218A, 3DK2219 and 3DK2219A 半导体分立器件 ３ｄｋ２２１８（２２１８ａ、２２１９、２２１９ａ）型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20167-1992 |
Electron tube Detail specification for silicon-intensifier tartget camera tube of type SF-1403 电子管sf—1403型硅增强靶摄像管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20071-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK4148 半导体分立器件 ２ｃｋ４１４８型硅开关二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20070-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK105 半导体分立器件 ２ｃｋ１０５型硅开关二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20069-1992 |
Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK76 半导体分立器件 ２ｃｋ７６型硅开关二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20068-1992 |
Semiconductor discrete device. Detail specification for lower noise for silicon voltage reference diode for type 2DW14~18 半导体分立器件 ２ｄｗ１４～１８型低噪声硅电压基准二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20067-1992 |
Semiconductor discrete device. Detail specification for type 2CZ30 silicon rectifier diode 半导体分立器件 ２ｃｚ３０型硅整流二极管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20066-1992 |
Semiconductor discrete device. Detail specification for type 2CL3 silicon high voltage rectifier stack 半导体分立器件 ２ｃｌ３型硅高压整流堆详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20065-1992 |
Semiconductor discrete device. Detail specification for type QL72 silicon three phase full wave bridge rectifier 半导体分立器件 ｑｌ７２型硅三相桥式整流器详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20064-1992 |
Semiconductor discrete device. Detail specification for type QL71 Silicon single phase full wave bridge rectifier 半导体分立器件 ｑｌ７１型硅单相桥式整流器详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20063-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213 半导体分立器件 ３ｄｇ２１３型ｎｐｎ硅超高频低噪声双差分对晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20062-1992 |
Semiconductor discrete device. Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210 半导体分立器件 ３ｄｇ２１０型ｎｐｎ硅超高频低噪声差分对晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20061-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146 半导体分立器件 ｃｓ１４６型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20060-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120 半导体分立器件 ３ｄｇ１２０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20059-1992 |
Semiconductor discrete device. Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111 半导体分立器件 ３ｄｇ１１１型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20058-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK105 半导体分立器件 ３ｄｋ１０５型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20057-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK104 半导体分立器件 ３ｄｋ１０４型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20056-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK103 半导体分立器件 ３ｄｋ１０３型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20055-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK102 半导体分立器件 ３ｄｋ１０２型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20054-1992 |
Semiconductor discrete device. Detail specification for silicon NPN low power switching transistor of type 3DK101 半导体分立器件 ３ｄｋ１０１型ｎｐｎ硅小功率开关晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20016-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１８２型ｎｐｎ硅小功率高反压晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20015-1992 |
Semiconductor discrete device. Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｄｇ１３０型ｎｐｎ硅高频小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20014-1992 |
Semiconductor discrete device. Detail specification for PNP silicon low-power transistor for types 3CG110 GP, GT and types GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级３ｃｇ１１０型ｐｎｐ硅小功率晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20013-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS10 GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｃｓ１０型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20012-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS4 GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｃｓ４型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ 20011-1992 |
Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS1 GP, GT and GCT classes 半导体分立器件 ｇｐ、ｇｔ和ｇｃｔ级ｃｓ１型硅ｎ沟道耗尽型场效应晶体管详细规范 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 10060-1991 |
Detail specification for electronic components. Ambient rated silicon rectifier diode, Type 2CZ117 电子器件详细规范 ２ｃｚ１１７型环境额定硅整流二极管 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 10059-1991 |
Detail specification for electronic components. Ambient rated silicon rectifier diode, Type 2CZ116 电子器件详细规范 ２ｃｚ１１６型环境额定硅整流二极管 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 10058-1991 |
Detail specification for electronic components. Ambient rated silicon rectifier diode, Type 2CZ103 电子器件详细规范 ２ｃｚ１０３型环境额定硅整流二极管 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 10057-1991 |
Detail specification for electronic component. Case rated silicon rectifier diode, Type 2CZ60 电子器件详细规范 ２ｃｚ６０型管壳额定硅整流二极管 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 10056-1991 |
Detail specification for electronic components. Case rated silicon rectifier diode, Type 2CZ59 电子器件详细规范 ２ｃｚ５９型管壳额定硅整流二极管 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 10055-1991 |
Detail specification for electronic components. Case rated silicon rectifier diode, Type 2CZ58 电子器件详细规范 ２ｃｚ５８型管壳额定硅整流二极管 |
China Electronics
Standards Specification silicon |
English PDF |
| SJ/T 10054-1991 |
Detail specification for electronic components. Case rated silicon rectifier diode for Type 2CZ57 电子器件详细规范 ２ｃｚ５７型管壳额定硅整流二极管 |
China Electronics
Standards Specification silicon |
English PDF |
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