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| Standard Code | Standard Title | Standard Class | Order |
|---|---|---|---|
| SJ/T 11497-2015 |
Test method for thermal stability testing of gallium arsenide wafers 砷化镓晶片热稳定性的试验方法 |
China Electronics
Standards arsenide |
 English PDF |
| SJ/T 11496-2015 |
Determination of boron concentration in gallium arsenide by infrared absorption 红外吸收法测量砷化镓中硼含量 |
China Electronics
Standards arsenide |
English PDF |
| SJ/T 11492-2015 |
Test methods for measurement of composition of gallium arsenide phosphide wafers by photoluminescence 光致发光法测定磷镓砷晶片的组分 |
China Electronics
Standards arsenide |
English PDF |
| SJ/T 11490-2015 |
Test method for measuring etch pit density (EPD) in low dislocation density gallium arsenide wafers 低位错密度砷化镓抛光片蚀坑密度的测量方法 |
China Electronics
Standards arsenide |
English PDF |
| SJ 20844-2002 |
Test method for microzone homogeneity of semi-insulating monocrystal gallium arsenide 决绝缘砷化镓单晶微区均匀性测试方法 |
China Electronics
Standards arsenide |
English PDF |
| SJ 20843-2002 |
Quantitative determination of AB microscopic defect density in gallium arsenide single crystal 砷化镓单晶ab微缺陷密度定量检验方法 |
China Electronics
Standards arsenide |
English PDF |
| SJ 20842-2002 |
Test method for Ga/As ratio of surface of gallium arsenide 砷化镓表面砷镓比的测试方法 |
China Electronics
Standards arsenide |
English PDF |
| SJ 20714-1998 |
Test method for sub-surface damage of gallium arsenide polished wafer by X-ray double crystal diffraction 砷化镓抛光片亚损伤层的x射线双晶衍射试验方法 |
China Electronics
Standards arsenide |
English PDF |
| SJ 20713-1998 |
Method for the determination of 12 species of impurities including copper, manganese, magnesium, vanadium, titanium in high-purity gallium used for gallium arsenide by ICP spectrometry 砷化镓用高钝镓中铜、锰、镁、钒、钛等12种杂质的等离子体光谱分析法 |
China Electronics
Standards arsenide |
English PDF |
| SJ 20635-1997 |
Test method for residual impurities concentration in microzone of semi-insulating gallium arsenide 半绝缘砷化镓剩余杂质浓度微区试验方法 |
China Electronics
Standards arsenide |
English PDF |
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